VS GT400TD60S

VS-GT400TD60S
www.vishay.com
Vishay Semiconductors
Dual INT-A-PAK Low Profile “Half Bridge”
(Standard Speed IGBT), 400 A
FEATURES
• TrenchStop IGBT technology
• Standard: optimized for hard switching speed
• Low VCE(on)
• Square RBSOA
• Gen 4 FRED Pt® dices technology
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
Dual INT-A-PAK Low Proﬁle • Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS BENEFITS

VCES 600 V
• Increased operating efficiency
IC DC at TC = 114 °C 400 A
• Performance optimized as output inverter stage for TIG
VCE(on) (typical) at 400 A, 25 °C 1.14 V
welding machines
Speed DC to 1 kHz
• Direct mounting on heatsink
Package Dual INT-A-PAK low profile
• Very low junction to case thermal resistance
Circuit configuration Half bridge
ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
TC = 25 °C 711
Continuous collector current IC (1)
TC = 80 °C 532
Pulsed collector current ICM TC = 175 °C, tp = 6 ms, VGE = 15 V 1100
A
Clamped inductive load current ILM 900
TC = 25 °C 260
Diode continuous forward current IF
TC = 80 °C 192
Gate to emitter voltage VGE ± 20 V
TC = 25 °C 1364
Maximum power dissipation (IGBT) PD W
TC = 80 °C 864
TC = 25 °C 441
Maximum power dissipation (Diode) PD W
TC = 80 °C 279
Any terminal to case
RMS isolation voltage VISOL 3500 V
(VRMS t = 1 s, TJ = 25 °C)
Note
(1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
Revision: 12-Jul-2022 1 Document Number: 96724

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TD60S
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 1.2 mA 600 - -
VGE = 15 V, IC = 400 A - 1.14 1.40
Collector to emitter voltage VCE(on) V
VGE = 15 V, IC = 400 A, TJ = 125 °C - 1.13 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 6 mA 3.8 4.7 6.3
VGE = 0 V, VCE = 600 V - 0.002 0.3
Collector to emitter leakage current ICES mA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.1 -
IFM = 400 A - 1.65 2.26
Diode forward voltage drop VFM V
IFM = 400 A, TJ = 125 °C - 1.58 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Qg - 2791 -
Gate-to-emitter charge (turn-on) Qge IC = 75 A, VCC = 520 V, VGE = 15 V - 428 - nC
Gate-to-collector charge (turn-on) Qgc - 711 -
Turn-on switching loss Eon - 2.5 -
IC = 400 A, VCC = 300 V, VGE = 15 V,
Turn-off switching loss Eoff - 20.7 -
Rg = 1.5 Ω, L = 500 μH, TJ = 25 °C
Total switching loss Etot - 23.2 -
mJ
Turn-on switching loss Eon - 2.2 -
Turn-off switching loss Eoff - 27.6 -
Total switching loss Etot - 29.8 -
IC = 400 A, VCC = 300 V, VGE = 15 V,
Turn-on delay time td(on) - 24 -
Rg = 1.5 Ω, L = 500 μH, TJ = 125 °C
Rise time tr - 104 -
ns
Turn-off delay time td(off) - 506 -
Fall time tf - 167 -
TJ = 175 °C, IC = 900 A, VCC = 300 V,
Reverse bias safe operating area RBSOA Vp = 600 V, Rg = 27 Ω, Fullsquare
VGE = 15 V to -5 V, L = 500 μH
Diode reverse recovery time trr - 152 - ns
IF = 50 A, dIF/dt = 500 A/μs,
Diode peak reverse current Irr - 24 - A
VCC = 200 V, TJ = 25 °C
Diode recovery charge Qrr - 1.82 - μC
Diode reverse recovery time trr - 200 - ns
IF = 50 A, dIF/dt = 500 A/μs,
Diode peak reverse current Irr - 39 - A
VCC = 200 V, TJ = 125 °C
Diode recovery charge Qrr - 3.94 - μC
THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range TJ, TStg -40 - 175 °C
IGBT - - 0.11
Junction to case per leg RthJC
Diode - - 0.34 °C/W
Case to sink per module RthCS - 0.05 -
Mounting case to heatsink: M6 screw 4 - 6
Nm
torque case to terminal 1, 2, 3: M5 screw 2 - 5
Weight - 270 - g

VS-GT400TD60S
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900 500
450 V CE = 20 V
800
TJ = 25 °C 400
700
T J = 125 °C
TJ = 125 °C 350
600
TJ = 175 °C 300
500
IC (A)
I C (A)
TJ = 150 °C 250
400
200
300 T J = 25 °C
150
200 100
100 50
0 0
0 0.3 0.6 0.9 1.2 1.5 1.8 4 4.5 5 5.5 6 6.5 7 7.5 8
VCE (V) V GE (V)
Fig. 1 - Typical Q1 to Q2 IGBT Fig. 4 - Typical Q1 to Q2 IGBT Transfer Characteristics

Output Characteristics, VGE = 15 V
900 8.0
800 VGE = 12 V 7.0
VGE = 15 V
700 VGE = 18 V 6.0
600 TJ = 25 °C
5.0
VGEth (V)
500
IC (A)
4.0
400
VGE = 9 V
3.0
300 TJ = 125 °C
200 2.0
100 1.0
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 4 5 6 7 8 9 10
VCE (V) IC (mA)
Fig. 2 - Typical Q1 to Q2 IGBT Fig. 5 - Typical Q1 to Q2 IGBT Gate Threshold Voltage

Output Characteristics, TJ = 125 °C
180 100
Allowable Case Temperature (°C)
160
10
140
120 DC 1
ICES (mA)
100 TJ = 175 °C
0.1
80 TJ = 150 °C
TJ = 125 °C
60 0.01
40 TJ = 25 °C
0.001
20
0 0.0001
0 100 200 300 400 500 600 700 800 100 200 300 400 500 600
IC - Continuous Collector Current (A) VCES (V)
Fig. 3 - Maximum Q1 to Q2 IGBT Fig. 6 - Typical Q1 to Q2 IGBT

Continuous Collector Current vs. Case Temperature Zero Gate Voltage Collector Current

VS-GT400TD60S
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30 10000
td(off)
25
Switching Time (ns)

20 Eoff 1000
td(on)
Energy (mJ)
15 tf
10 100
tr
5
Eon
0 10
0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30
IC (A) Rg (Ω)
Fig. 7 - Typical Q1 to Q2 IGBT Fig. 10 - Typical Q1 to Q2 IGBT

Energy Loss vs. IC (with D1 to D2 Antiparallel Diode) Switching Time vs. Rg (with D1 to D2 Antiparallel Diode)
TJ = 125 °C, VCC = 300 V, Rg = 1.5 Ω, VGE = +15 V /-15 V, L = 500 μH TJ = 125 °C, VCC = 300 V, IC = 400 A, VGE = +15 V/-15 V, L = 500 μH
10000 18
16
td(off) 14
Switching Time (ns)
12
tf
VGE (V)
tr 10
100
8
td(on)
6
4 TJ = 25 °C
2 VCE = 520 V
IC = 75 A
1 0
0 50 100 150 200 250 300 350 400 450 500 0 400 800 1200 1600 2000 2400 2800 3200
IC (A) QG (nC)
Fig. 8 - Typical Q1 to Q2 IGBT Fig. 11 - Typical Q1 to Q2 IGBT

Switching Time vs. IC (with D1 to D2 Antiparallel Diode) Gate Charge vs. Gate to Emitter Voltage
20 650
600
550
Eoff
15 500
450
400
Energy (mJ)
TJ = 175 °C
IF (A)
350
10 TJ = 150 °C
300
Eon TJ = 125 °C
250
200
5 150
100
50 TJ = 25 °C
0 0
0 5 10 15 20 25 30 0 0.5 1.0 1.5 2.0 2.5
Rg (:) VFM (V)
Fig. 9 - Typical Q1 to Q2 IGBT Fig. 12 - Typical D1 to D2 Antiparallel Diode

Energy Loss vs. Rg (with D1 to D2 Antiparallel Diode) Forward Characteristics

VS-GT400TD60S
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180 5
Allowable Case Temperature (°C)
160 4.5
140 4 TJ = 125 °C
3.5
120
3
Qrr (μC)
100
2.5
80 DC
2
60
1.5
40 TJ = 25 °C
1
20 0.5
0 0
0 50 100 150 200 250 300 100 200 300 400 500
IF - Continuous Forward Current (A) dIF/dt (A/μs)
Fig. 13 - Maximum D1 to D2 Antiparallel Diode Fig. 16 - Typical D1 to D2 Antiparallel Diode

Continuous Forward Current vs. Case Temperature Reverse Recovery Charge vs. dIFdt, Vrr = 200 V, IF = 50 A
500
1000
450
400
100
350
300 10
IC (A)
trr (ns)
TJ = 125 °C
250
200 1
150
TJ = 25 °C
100 0.1
50
0 0.01
100 200 300 400 500 10 100 1000
dIF/dt (A/μs) VCE (V)
Fig. 14 - Typical D1 to D2 Antiparallel Diode Fig. 17 - Q1 to Q2 IGBT Reverse BIAS SOA

Reverse Recovery Time vs. dIFdt TJ = 175 °C, IC = 900 A, Rg = 27Ω, VGE = +15 V / -5 V, VCC = 300 V,
Vp = 600 V
50
TA = 25 °C
ICE - Collector-Emitter Current (A)
TJ = 175 °C
45 Single pulse
40 1000
35 TJ =125 °C
30
100
Irr (A)
25
20
15 10
TJ = 25 °C
10
5
BVCES limited
0 1
100 200 300 400 500 0.1 1 10 100 1000
dIF/dt (A/μs) VCS - Collector-Emitter Voltage (V)
Fig. 15 - Typical D1 to D2 Antiparallel Diode Fig. 18 - Q1 to Q2 IGBT Safe Operating Area

Reverse Recovery Current vs. dIFdt, Vrr = 200 V, IF = 50 A

VS-GT400TD60S
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1
ZthJC - Thermal Impedance
Junction to Case (°C/W)
0.1
0.50
0.01 0.20
0.10
0.05
0.02
0.001 0.01
DC
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Q1 to Q2 IGBT)
1
ZthJC - Thermal Impedance
Junction to Case (°C/W)
0.1
0.50
0.20
0.01
0.10
0.05
0.02
0.01
0.001 DC
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
Fig. 20 - Maximum Thermal Impedance ZthJC Characteristics - (D1 to D2 Antiparallel Diode)
ORDERING INFORMATION TABLE
Device code G T 400 T D 60 S
1 2 3 4 5 6 7
1 - Insulated gate bipolar transistor (IGBT)

2 - T = Trench IGBT technology
3 - Current rating (400 = 400 A)
4 - Circuit configuration (T = half-bridge)
5 - Package indicator (D = dual INT-A-PAK low profile)
6 - Voltage rating (60 = 600 V)
7 - Speed / type (S = standard speed IGBT)

VS-GT400TD60S
www.vishay.com
CIRCUIT CONFIGURATION
3
LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95435

Outline Dimensions
www.vishay.com
Dual INT-A-PAK Low Profile
DIMENSIONS in millimeters
2.8 x 0.5
M5
screwing depth 13.5
max. 8
21.9 ± 0.5
7.5
16 ± 0.5
15 ± 0.5
7.2
48 ± 0.5
28 ± 0.5 28 ± 0.5
27 ± 0.4
48 ± 0.3
15 ± 0.4
62 ± 1
12
Ø6
.4
93 ± 0.3
108 ± 1
Revision: 11-Nov-14 1 Document Number: 95435

Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
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or for that of subsequent links.
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022 1 Document Number: 91000

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PRIMARY CHARACTERISTICS BENEFITS

ABSOLUTE MAXIMUM RATINGS

Revision: 12-Jul-2022 1 Document Number: 96724

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

THERMAL AND MECHANICAL SPECIFICATIONS

Revision: 12-Jul-2022 2 Document Number: 96724

VCE (V) V GE (V)

Fig. 1 - Typical Q1 to Q2 IGBT Fig. 4 - Typical Q1 to Q2 IGBT Transfer Characteristics

VCE (V) IC (mA)

Fig. 2 - Typical Q1 to Q2 IGBT Fig. 5 - Typical Q1 to Q2 IGBT Gate Threshold Voltage

IC - Continuous Collector Current (A) VCES (V)

Fig. 3 - Maximum Q1 to Q2 IGBT Fig. 6 - Typical Q1 to Q2 IGBT

Revision: 12-Jul-2022 3 Document Number: 96724

Switching Time (ns)

Fig. 7 - Typical Q1 to Q2 IGBT Fig. 10 - Typical Q1 to Q2 IGBT

Fig. 8 - Typical Q1 to Q2 IGBT Fig. 11 - Typical Q1 to Q2 IGBT

Rg (:) VFM (V)

Fig. 9 - Typical Q1 to Q2 IGBT Fig. 12 - Typical D1 to D2 Antiparallel Diode

Revision: 12-Jul-2022 4 Document Number: 96724

IF - Continuous Forward Current (A) dIF/dt (A/μs)

Fig. 13 - Maximum D1 to D2 Antiparallel Diode Fig. 16 - Typical D1 to D2 Antiparallel Diode

dIF/dt (A/μs) VCE (V)

Fig. 14 - Typical D1 to D2 Antiparallel Diode Fig. 17 - Q1 to Q2 IGBT Reverse BIAS SOA

dIF/dt (A/μs) VCS - Collector-Emitter Voltage (V)

Fig. 15 - Typical D1 to D2 Antiparallel Diode Fig. 18 - Q1 to Q2 IGBT Safe Operating Area

Revision: 12-Jul-2022 5 Document Number: 96724

Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Q1 to Q2 IGBT)

Fig. 20 - Maximum Thermal Impedance ZthJC Characteristics - (D1 to D2 Antiparallel Diode)

ORDERING INFORMATION TABLE

Device code G T 400 T D 60 S

1 - Insulated gate bipolar transistor (IGBT)

Revision: 12-Jul-2022 6 Document Number: 96724

LINKS TO RELATED DOCUMENTS

Revision: 12-Jul-2022 7 Document Number: 96724

Revision: 11-Nov-14 1 Document Number: 95435

© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2022 1 Document Number: 91000

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