180/181RKI Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 180 A
FEATURES
• Hermetic glass-metal seal
RoHS
• International standard case TO-209AB (TO-93) COMPLIANT

• RoHS compliant

• Designed and qualified for industrial level

TO-209AB (TO-93) TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY • Controlled DC power supplies

IT(AV) 180 A • AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
180 A
IT(AV)
TC 80 °C
IT(RMS) 285 A
50 Hz 3800
ITSM A
60 Hz 4000
50 Hz 72
I2 t kA2s
60 Hz 66
VDRM/VRRM 400 to 1000 V
tq Typical 100 µs
TJ - 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
TYPE VOLTAGE REPETITIVE PEAK AND NON-REPETITIVE
AT TJ = TJ MAXIMUM
NUMBER CODE OFF-STATE VOLTAGE PEAK VOLTAGE
mA
V V
40 400 500
180/181RKI 80 800 900 30
100 1000 1100

Document Number: 93699 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 05-Jun-08 1
180/181RKI Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 180 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current 180 A
IT(AV) 180° conduction, half sine wave
at case temperature 80 °C
Maximum RMS on-state current IT(RMS) DC at 79 °C case temperature 285 A
t = 10 ms No voltage 3800
Maximum peak, one-cycle t = 8.3 ms reapplied 4000
ITSM A
non-repetitive surge current t = 10 ms 100 % VRRM 3500
t = 8.3 ms reapplied Sinusoidal half wave, 3660
t = 10 ms No voltage initial TJ = TJ maximum 72
t = 8.3 ms reapplied 66
Maximum I2t for fusing I2 t kA2s
t = 10 ms 100 % VRRM 61
t = 8.3 ms reapplied 56
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 720 kA2√s
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.83
V
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.89
Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.92
mΩ
High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.81
Maximum on-state voltage VTM Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V
Maximum holding current IH 600
TJ = 25 °C, anode supply 12 V resistive load mA
Typical latching current IL 1000

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise Gate drive 20 V, 20 Ω, tr ≤ 1 µs
dI/dt 300 A/µs
of turned-on current TJ = TJ maximum, anode voltage ≤ 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/µs
Typical delay time td 1.0
Vd = 0.67 % VDRM, TJ = 25 °C
µs
ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs,
Typical turn-off time tq 100
VR = 100 V, dV/dt = 20 V/µs

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs
of off-state voltage
Maximum peak reverse and IRRM,
TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
off-state leakage current IDRM

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93699

2 Revision: 05-Jun-08
 180/181RKI Series
Phase Control Thyristors Vishay High Power Products
(Stud Version), 180 A

TRIGGERING
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10
W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A
Maximum peak positive gate voltage +VGM 20
TJ = TJ maximum, tp ≤ 5 ms V
Maximum peak negative gate voltage -VGM 5.0
TJ = - 40 °C 130 -
DC gate current required to trigger IGT TJ = 25 °C 65 150 mA
Maximum required gate trigger/
TJ = 125 °C current/voltage are the lowest 35 -
TJ = - 40 °C value which will trigger all units 2.0 -
12 V anode to cathode applied
DC gate voltage required to trigger VGT TJ = 25 °C 1.2 2.5 V
TJ = 125 °C 0.9 -

Maximum gate current/voltage

DC gate current not to trigger IGD 10 mA
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
DC gate voltage not to trigger VGD 0.25 V
cathode applied

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
TJ - 40 to 125
temperature range °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
RthJC DC operation 0.15
junction to case
K/W
Maximum thermal resistance,
RthCS Mounting surface, smooth, flat and greased 0.04
case to heatsink
31
Non-lubricated threads
(275) N·m
Mounting torque, ± 10 %
24.5 (lbf ⋅ in)
Lubricated threads
(210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

ΔRthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.050 0.032
120° 0.063 0.059
90° 0.080 0.082 TJ = TJ maximum K/W
60° 0.118 0.124
30° 0.225 0.228
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Document Number: 93699 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 05-Jun-08 3
180/181RKI Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 180 A

130 130
Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C)

181RKI Series 181RKI Series
R thJC (DC) = 0.15 K/W R thJC (DC) = 0.15 K/W
120 120

110 110
Conduction Period
Conduction Angle
100 100

90 90 30°
60°
90°
120°
30° 180°
80 60° 80
90°
120° 180° DC
70 70
0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300
Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

240
Maximum Average On-state Power Loss (W)

R th
220 180°

0.
0.
120°

2K

S
3

A
200
K/

/W

=0
90°
W

.1
180 60°

K/ W
160 30° 0.6

-D
K/
W

e lt
140

aR
RMS Limit 0 .8
K/ W
120
1K
/W
100
80 Conduction Angle 1 .5
K/ W
60
181RKI Series 2 K/ W
40
TJ = 125°C
20
0
0 20 40 60 80 100 120 140 160 180
0 25 50 75 100 125
Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

350
Maximum Average On-state Power Loss (W)

DC
R t

300 180° 0.
hS

2
K/
A

120°
=

W
0.

90° 0.
1

3
K/

250 K/
60°
W

W
-D

30°
el
ta

200
R

0.6
K/ W
150 RMS Limit
0.8
K/ W
Conduction Period 1 K/
100 W
1.5 K
/W
181RKI Series
50 2 K/ W
TJ = 125°C

0
0 50 100 150 200 250 300
0 25 50 75 100 125
Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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4 Revision: 05-Jun-08
 180/181RKI Series
Phase Control Thyristors Vishay High Power Products
(Stud Version), 180 A

4000 4000
At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

Rated VRRM Applied Following Surge. Versus Pulse Train Duration. Control
Initial TJ = 125°C Of Conduction May Not Be Maintained .
3500 3500 Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s No Voltage Reapplied
Rated VRRM Reapplied
3000 3000

2500 2500

2000 2000
181RKI Series 181RKI Series

1500 1500
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000
Instantaneous On-state Current (A)

TJ = 25°C
1000
TJ = 125°C

181RKI Series

100
0.5 1 1.5 2 2.5 3
Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

1
Transient Thermal Impedance Z thJC (K/W)

Steady State Value

R thJC = 0.15 K/W
(DC Operation)

0.1

0.01

181RKI Series

0.001
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

Document Number: 93699 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 05-Jun-08 5
180/181RKI Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 180 A

100
Rectangular gate pulse (1) PGM = 12W, tp = 5ms
a) Recommended load line for (2) PGM = 30W, tp = 2ms
rated di/dt: 20V, 30ohms; (3) PGM = 60W, tp = 1ms
Instantaneous Gate Voltage (V) tr<=0.5 µs, tp=>6µs (4) PGM = 200W, tp = 300µs
b) Recommended load line for
10 <=30% rated di/dt: 15V, 40ohms (b)
tr<=1 µs, tp=>6µs
(a)

Tj=-40 °C
Tj=25 °C
1

Tj=140 °C
(1) (2) (3) (4)
VGD
IGD Device: 181RKI Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code 18 1 RKI 100

1 2 3 4

1 - IT(AV) rated average output current (rounded/10)

2 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 - Thyristor
4 - Voltage code x 10 = VRRM (see Voltage Ratings table)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95077

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93699

6 Revision: 05-Jun-08
 Outline Dimensions
Vishay Semiconductors

TO-209AB (TO-93)

DIMENSIONS in millimeters (inches)

Glass metal seal

19 (0.75) MAX.

Ø 8.5 (0.33)
Ø 4.3 (0.17)

Red silicon rubber

C.S. 0.51 mm2
(0.0008 s.i.)
Red cathode
213.5 ± 10
(8.41 ± 0.39) White gate 238.5 ± 10
(9.39 ± 0.39)

Red shrink
75 (2.95) White shrink
MIN.

28.5 (1.12) Ø 28.5 (1.12)

MAX. MAX.

16 (0.63) MAX.

21 (0.83)
MAX.
SW 32

3/4"-16UNF-2A
35 (1.38)
MAX.

0° to 15° Fast-on terminals

4 MAX. AMP. 280000-1
REF-250

38 MAX.
23 MIN.

Flexible lead

C.S. 35 mm2
(0.054 s.i.)

Document Number: 95077 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 19-May-10 1
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