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-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
2
(A) • Designed and qualified according to
JEDEC®-JESD 47
• Low IGT parts available
1
• 125 °C max. operating junction temperature
2
• Material categorization:
Available
3
1 (K) (G) 3
for definitions of compliance please see
TO-247AC 3L www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
• Typical usage is in input rectification crowbar (soft start)
IT(AV) 35 A and AC switch motor control, UPS, welding and battery
VDRM/VRRM 800 V, 1200 V charge
VTM 1.45 V
IGT 150 mA DESCRIPTION
TJ -40 °C to +125 °C The VS-40TPS... high voltage series of silicon controlled
Package TO-247AC 3L rectifiers are specifically designed for medium power
Circuit configuration Single SCR switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
VOLTAGE RATINGS
VRRM/VDRM, VRSM,
IRRM/IDRM
MAXIMUM REPETITIVE PEAK MAXIMUM NON-REPETITIVE PEAK
PART NUMBER AT 125 °C
AND OFF-STATE VOLTAGE REVERSE VOLTAGE
mA
V V
VS-40TPS08A-M3 800 900
VS-40TPS08-M3 800 900
10
VS-40TPS12A-M3 1200 1300
VS-40TPS12-M3 1200 1300
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 10
W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10 V
TJ = - 40 °C 4.0
Anode supply = 6 V
Maximum required DC gate voltage to trigger VGT TJ = 25 °C 2.5 V
resistive load
TJ = 125 °C 1.7
TJ = - 40 °C 270
Anode supply = 6 V
TJ = 25 °C 150
Maximum required DC gate current to trigger IGT resistive load mA
TJ = 125 °C 80
TJ = 25 °C, for 40TPS..APbF and 40TPS..A-M3 40
Maximum DC gate voltage not to trigger
VGD 0.25 V
for 40TPS12
TJ = 125 °C, VDRM = rated value
Maximum DC gate current not to trigger
IGD 6 mA
for 40TPS12
Maximum DC gate voltage not to trigger
VGD 0.15 V
for 40TPS12A
TJ = 125 °C, VDRM = rated value
Maximum DC gate current not to trigger
IGD 1 mA
for 40TPS12A
70 0
0 10 20 30 40 0 5 10 15 20 25 30 35 40
130 80
40TPS..Series
DC
RthJC (DC) = 0.6 °C/W 70 180°
120 120°
60 90°
60°
110
50 30°
Conduction Period
40 RMS Limit
100
30° 30
90 60° Conduction Period
90°
120° 20
80 180° 40TPS..Series
10 TJ = 125 °C
DC
70 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
350
350
300 300
40TPS..Series 40TPS.. Series
250 250
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Pulse Train Duration (s)
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
100
Instantaneous On-State Current (A)
10 TJ = 25 °C
TJ = 125 °C
40TPS.. Series
1
0.5 1 1.5 2
100
Rectangular gate pulse (1) PGM = 100 W, tp = 500 μs
a) Recommended load line for (2) PGM = 50 W, tp = 1 ms
Instantaneous Gate Voltage (V)
TJ = - 40 °C
TJ = 50 °C
TJ = 125 °C
1
(4) (3) (2) (1)
VGD
IGD
40TPS..Series Frequency limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Current (A)
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
1
(4) (3) (2) (1)
VGD
b) a)
Frequency limited by PG(AV)
IGD
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Current (A)
1
Transient Thermal Impedance ZthJC (°C/W)
Single Pulse
40TPS.. Series
0.01
0.0001 0.001 0.01 0.1 1
1 2 3 4 5 6 7 8
A A (Datum B)
B E (3) Ø P (6)
S A2 Ø P1
R/2 (2) Ø K M DBM
A
Q
D2
2 x R (2) D1 (4)
D
Thermal pad
2 D 4
1 3
L1 (5)
C L
See view B A
2 x b2 C
2x e
3xb
b4 A1
0.10 M C A M E1 (4)
0.01 M D B M
(b1, b3, b5) View A - A
Plating Base metal
D DE E
(c) c1 C C
Section C - C, D - D, E - E View B
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