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VS-150U(R)..

Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 150 A
FEATURES
• Diffused diode
• High voltage ratings up to 1200 V RoHS
COMPLIANT
• High surge current capabilities
• Stud cathode and stud anode version
• Hermetic metal case
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-205AA (DO-8)
TYPICAL APPLICATIONS
• Welders
• Power supplies
PRODUCT SUMMARY • Machine tool controls
IF(AV) 150 A • High power drives
Package DO-205AA (DO-8) • Medium traction applications
Circuit configuration Single diode • Battery charges
• Freewheeling diodes

MAJOR RATINGS AND CHARACTERISTICS


PARAMETER TEST CONDITIONS VALUES UNITS
150 A
IF(AV)
TC 125 °C
IF(RMS) 235
50 Hz 3000 A
IFSM
60 Hz 3140
50 Hz 45
I2t kA2s
60 Hz 41
VRRM Range 600 to 1200 V
TJ -40 to 180 °C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE IRRM MAXIMUM
VOLTAGE
TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT TJ = TJ MAXIMUM
CODE
V V mA
60 600 700
80 800 900
VS-150U(R).. 15
100 1000 1100
120 1200 1300

Revision: 30-May-16 1 Document Number: 93490


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-150U(R).. Series
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Vishay Semiconductors

FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current  150 A


IF(AV) 180° conduction, half sine wave
at case temperature 125 °C
Maximum RMS forward current IF(RMS) DC at 110 °C 235

Maximum peak, one cycle forward, non-repetitive t = 10 ms 3000 A


IFSM
surge current t = 8.3 ms 3140
No voltage  Sinusoidal half wave,
t = 10 ms reapplied initial TJ = TJ maximum 45
Maximum I2t for fusing I2t kA2s
t = 8.3 ms 41
Slope resistance rf TJ = TJ maximum 0.97 m
Threshold voltage VF(T0) 0.80
V
Maximum forward voltage drop VFM Ipk = 600 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.47

THERMAL AND MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage
TJ, TStg -40 to +180 °C
temperature range
Maximum thermal resistance, junction to case RthJC DC operation 0.3
K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1
Not lubricated threads tighting on hexagon 17
Lubricated threads tighting on hexagon 14.5
Maximum allowable mounting torque + 0 - 20 % N·m
Not lubricated threads tighting on nut 14
Lubricated threads tighting on nut 12
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet DO-205AA (DO-8)

RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.031 0.023
120° 0.038 0.040
90° 0.048 0.053 TJ = TJ maximum K/W
60° 0.071 0.075
30° 0.120 0.121
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 30-May-16 2 Document Number: 93490


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-150U(R).. Series
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Vishay Semiconductors
Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C)


180 180
150U(R).. Series 150U(R).. Series
RthJC (DC) = 0.3 K/W RthJC (DC) = 0.3 K/W
160 160

Conduction Angle Conduction Period


140 140
30 ° DC
60 °
90 °
120 120 120 °
180 °
180 °
120 °
100 30° 60 ° 100
90 °

80 80
0 50 100 150 200 0 40 80 120 160 200

Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics


Maximum Average Forward Power Loss (W)

300
180 °

250 120 ° Rt
hS
90 ° A
=0
200 60 ° .0
5
0.2 K/
30 ° K/ W
W -D
150 elt
RMS Limit 0.4 a
K/W R
0.6
K/W
100
Conduction Angle
1.2 K
50 150U(R) .. Series /W
Tj = 180 °C
0
0 50 100 150 200 100 120 140 160 180

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)


Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)

300
180 °
RMS Limit
250 120 °
90 ° Rt
200 hS
60 ° DC A
=0
30 ° 0.2 .05
K/W K/
150 W
0.4 -D
K/W elt
aR
0.6
100 Conduction Period K/W
0.8 K
/W
50 1.2 K/W
150U(R) .. Series
Tj = 180 °C
0
0 50 100 150 200 250 300 100 120 140 160 180

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)


Fig. 4 - Forward Power Loss Characteristics

Revision: 30-May-16 3 Document Number: 93490


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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-150U(R).. Series
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Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)

Peak Half Sine Wave Forward Current (A)


3500 4000
At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated Vrrm Applied Following Surge. Versus Pulse Train Duration. Control
Initial Tj = 180 °C 3500 Of Conduction May Not Be Maintained.
3000
@ 60 Hz 0.0083 s Initial T j = 180 °C
@ 50 Hz 0.0100 s 3000 No Voltage Reapplied
2500 Rated Vrrm Reapplied
2500
2000
2000
1500
1500

1000 Per Junction 1000 Per Junction

500 500
1 10 100 0.01 0.1 1
Number Of Equal Amplitude
Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10 000
Instantaneous Forward Current (A)

1000

100
Tj = 25 °C

Tj = 180 °C
10
0.5 1 1.5 2 2.5 3

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

1
ZthJC - Transient Thermal Impedance (K/W)

Steady State Value


RthJC = 0.3 K/W
(DC Operation)

0.1

150U(R).. Series

0.01
0.001 0.01 0.1 1 10

t - Square Wave Pulse Duration (s)


Fig. 8 - Thermal Impedance ZthJC Characteristic

Revision: 30-May-16 4 Document Number: 93490


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-150U(R).. Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE

Device code VS- 15 0 U R 120 D L

1 2 3 4 5 6 7 8

1 - Vishay Semiconductors product


2 - 15 = essential part number
3 - 0 = standard device
4 - U = stud normal polarity (cathode to stud)
5 - None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)

6 - Voltage code x 10 = VRRM (see Voltage Ratings table)


7 - Diffused diode
8 - L = stud base 1/2"-24UNF-2A threads
None = stud base 3/8"-24UNF-2A threads

Note: for metric device M12 x 1.75 contact factory

LINKS TO RELATED DOCUMENTS


Dimensions www.vishay.com/doc?95315

Revision: 30-May-16 5 Document Number: 93490


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors

DO-205AA (DO-8) for 150U(R) Series

DIMENSIONS in millimeters (inches)

Glass-metal seal
16.5 (0.65) 2.6 (
MAX. 0.10
) MA
X.

35 (1.38)
MAX.
6.5 (0.26) MIN.

Ø 8.5 (0.33) NOM.


C.S. 16 mm2
(0.015 s.i.)

165 (6.49) MIN


170 (6.69) MAX.

Ø 23.5 (0.93) MAX.

55 (2.16) MIN.

24 (0.94)
MAX.

17 (0.69)
MAX.

3/8"-24UNF-2A
(For metric device M12 x 1.75) (1)

Note
(1) For stud base 1/2"-20UNF-2A threads; refer to “Ordering Information Table”

Document Number: 95315 For technical questions, contact: indmodules@vishay.com www.vishay.com


Revision: 02-Jul-08 1
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Revision: 13-Jun-16 1 Document Number: 91000

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