VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..

PbF Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power diodes in four basic
configurations
• Simple mounting
INT-A-PAK
• UL approved file E78996
• Designed and qualified for multiple level
PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IF(AV) 165 A to 230 A
Type Modules - diode, high voltage APPLICATIONS
Package INT-A-PAK • DC motor control and drives
Single diode, two diodes common anode, • Battery chargers
Circuit
two diodes common cathode, two diodes
configuration • Welders
doubler circuit
• Power converters

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.166.. VSK.196.. VSK.236.. UNITS
165 195 230 A
IF(AV)
TC 100 100 100 °C
IF(RMS) 260 305 360
50 Hz 4000 4750 5500 A
IFSM
60 Hz 4200 4980 5765
50 Hz 80 113 151
I2t kA2s
60 Hz 73 103 138
I2t 798 1130 1516 kA2s
VRRM 400 to 1600 V
TJ Range -40 to +150 °C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE IRRM
TYPE NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 °C
CODE V V mA
04 400 500

VS-VSK.166 08 800 900

VS-VSK.196 12 1200 1300 20
VS-VSK.236 14 1400 1500
16 1600 1700

Revision: 04-May-17 1 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors

FORWARD CONDUCTION
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
VSK.166 VSK.196 VSK.236
Maximum average on-state  165 195 230 A
IF(AV) 180° conduction, half sine wave
current at case temperature 100 100 100 °C
Maximum RMS on-state current IF(RMS) 260 305 360
t = 10 ms No voltage 4000 4750 5500
Maximum peak, one-cycle t = 8.3 ms reapplied 4200 4980 5765 A
on-state, non-repetitive  IFSM
surge current t = 10 ms 100 % VRRM  3350 4000 4630
t = 8.3 ms reapplied Sine half wave, 3500 4200 4850
initial TJ =
t = 10 ms No voltage TJ maximum 80 113 151
t = 8.3 ms reapplied 73 103 138
Maximum I2t for fusing I2t kA2s
t = 10 ms 100 % VRRM  56 80 107
t = 8.3 ms reapplied 52 73 98
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 798 1130 1516 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum 0.73 0.69 0.7
V
High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ maximum 0.88 0.78 0.83
Low level value on-state
rt1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum 1.5 1.3 1.2
slope resistance m
High level value on-state rt2 (I >  x IF(AV)), TJ maximum 1.26 1.2 1.07
IFM =  x IF(AV), TJ = 25 °C, 180° conduction
Maximum forward voltage drop VFM 1.43 1.38 1.46 V
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VSK.166 VSK.196 VSK.236 UNITS
Maximum peak reverse and
IRRM TJ = 150 °C 20 mA
off-state leakage current
50 Hz, circuit to base, all terminals shorted,
RMS insulation voltage VINS 3500 V
t=1s

THERMAL AND MECHANICAL SPECIFICATIONS

VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
VSK.166 VSK.196 VSK.236
Maximum junction operating and
TJ, TStg -40 to +150 °C
storage temperature range
Maximum thermal resistance,
RthJC DC operation 0.2 0.16 0.14
junction to case per junction
K/W
Maximum thermal resistance,
RthCS Mounting surface smooth, flat and greased 0.05
case to heatsink per module
Mounting IAP to heatsink
A mounting compound is recommended and 4 to 6 Nm
torque ± 10 % busbar to IAP the torque should be rechecked after a period
of 3 hours to allow for the spread of 200 g
Approximate weight the compound. Lubricated threads.
7.1 oz.
Case style INT-A-PAK

Revision: 04-May-17 2 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors

R CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
DEVICES AT TJ MAXIMUM AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.166 0.025 0.03 0.038 0.055 0.089 0.018 0.031 0.041 0.057 0.089
VSK.196 0.016 0.019 0.024 0.034 0.053 0.012 0.02 0.026 0.035 0.054 K/W
VSK.236 0.009 0.010 0.014 0.018 0.025 0.008 0.012 0.015 0.019 0.025
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC



150 250
VSK.166.. Series 180°
140 RthJC (DC) = 0.20 K/W 120°

Maximum Average Forward

Maximum Allowable Case

200 90°
130 60°
Temperature (°C)

Power Loss (W)

Ø 30°
120 Conduction angle 150 RMS limit

110
100
100 Ø
30°
60° Conduction angle
90 90°
50 VSK.166.. Series
120°
80 180° TJ = 150 °C

70 0
0 40 80 120 160 200 0 40 80 120 160 200

Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics

150 300
VSK.166.. Series DC
140 RthJC (DC) = 0.20 K/W 180°
Maximum Average Forward
Maximum Allowable Case

250 120°
130 90°
Temperature (°C)

Power Loss (W)

60° RMS limit

Ø 200
120 Conduction period 30°

110 150
30° Ø
100
60° 100 Conduction period
90 90°
VSK.166.. Series
120° 50 Per junction
80 180° TJ = 150 °C
DC
70 0
0 50 100 150 200 250 300 0 50 100 150 200 250 300

Average Forward Current (A) Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics

Revision: 04-May-17 3 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
4000 4000
At any rated load condition and with Maximum non-repetitive surge current
rated VRRM applied following surge. versus pulse train duration.
3500 Initial TJ = 150 °C 3500 Initial TJ = 150 °C
at 60 Hz 0.0083 s No voltage reapplied

Peak Half Sine Wave

Forward Current (A)
Peak Half Sine Wave
Forward Current (A)

at 50 Hz 0.0100 s 3000 Rated VRRM reapplied

3000
2500
2500
2000
2000
1500

1500 1000
VSK.166.. Series VSK.166.. Series

1000 500
1 10 100 0.01 0.1 1

Number of Equal Amplitude Half Pulse Train Duration (s)

Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

300 300
0.

R thS
0.

0.2
4 3
250 250 K/ K/
Maximum Total Forward

Maximum Total Forward W

K/

A
0.5 W

=0
W
K/

.12
DC
Power Loss (W)

Power Loss (W) W

200 200

K/
0.7

W
K/W

-Δ
150 150

R
100 100

VSK.166.. Series
50 Per junction 50
TJ = 150 °C
0 0
0 50 100 150 200 250 0 25 50 75 100 125 150

Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 7 - On-State Power Loss Characteristics

1800 1800
Maximum Total Power Loss (W)

Maximum Total Power Loss (W)

1600 180° 1600 R

+ (Sine) th
~ SA
1400 180° 1400 =
0.0 0.
- (Rect) 12
4K K/
1200 1200 0.0 /W W
6K -Δ
1000 1000 /W R
0.1
800 800 K/W
0.16
600 600 K/W
2 x VSK.166.. Series 0.25
K/W
400 Single phase bridge 400
0.5 K/W
Connected 200
200
TJ = 150 °C
0 0
0 100 200 300 400 500 0 25 50 75 100 125 150

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 8 - On-State Power Loss Characteristics

Revision: 04-May-17 4 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
1600 1600
Maximum Total Power Loss (W)

Maximum Total Power Loss (W)

R th
1400 1400

0.
0.

04
06

SA
K/
K/

=
~ 120° W

W
1200 1200

0.
02
- (Rect)

K/
1000 1000 0.1

W
K/W

-Δ
R
800 800 0.1
6K
/W
600 600
0.25
K/W
400 3 x VSK.166.. Series 400
Three phase bridge 0.5 K/W
200 Connected 200
TJ = 150 °C
0 0
0 100 200 300 400 500 0 25 50 75 100 125 150

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 9 - On-State Power Loss Characteristics

150 300
VSK.196.. Series 180°
140 RthJC (DC) = 0.16 K/W 120°
Maximum Average Forward
Maximum Allowable Case

250 90°
130 60°
Temperature (°C)

Power Loss (W) 30°

Ø 200
120 Conduction angle RMS limit

110 150

100
30° 100 Ø
Conduction angle
90 60°
90°
50 VSK.196.. Series
120°
80 TJ = 150 °C
180°
70 0
0 50 100 150 200 250 0 40 80 120 160 200

Average Forward Current (A) Average Forward Current (A)

Fig. 10 - Current Ratings Characteristics Fig. 12 - On-State Power Loss Characteristics

150 350
VSK.196.. Series DC
140 RthJC (DC) = 0.16 K/W 180°
Maximum Average Forward

300
Maximum Allowable Case

120°
130 90°
Temperature (°C)

250 RMS limit

Power Loss (W)

Ø 60°
120 Conduction period 30°
200
110
30° 150 Ø
100 Conduction period
60°
90° 100
90
120° VSK.196.. Series
180° 50 Per junction
80
DC TJ = 150 °C
70 0
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350

Average Forward Current (A) Average Forward Current (A)

Fig. 11 - Current Ratings Characteristics Fig. 13 - On-State Power Loss Characteristics

Revision: 04-May-17 5 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
4500 5000
At any rated load condition and with Maximum non-repetitive surge current
rated VRRM applied following surge. 4500 versus pulse train duration.
4000 Initial TJ = 150 °C Initial TJ = 150 °C
at 60 Hz 0.0083 s No voltage reapplied

Peak Half Sine Wave

Forward Current (A)

Forward Current (A)

Peal Half Sine Wave

4000
3500 at 50 Hz 0.0100 s Rated VRRM reapplied
3500
3000
3000
2500
2500
2000
2000
1500 VSK.196.. Series 1500 VSK.196.. Series

1000 1000
1 10 100 0.01 0.1 1.0

Number of Equal Amplitude Half Pulse Train Duration (s)

Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

350 350

R th
0.

0.
300 300 3

SA
2
K/
Maximum Total Forward

Maximum Total Forward

=0
K/
0.4 W

W
DC K/

.12
250 250 W
Power Loss (W)

Power Loss (W)

0.5

K/
K/W

W
-Δ
200 200 0.7

R
K/W
150 150

100 100
VSK.196.. Series
Per junction
50 50
TJ = 150 °C

0 0
0 50 100 150 200 250 300 0 25 50 75 100 125 150

Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 16 - On-State Power Loss Characteristics

1200 1200
Maximum Total Power Loss (W)

Maximum Total Power Loss (W)

0.
R th
0.

+ 180° 06
04

0.0
1000 1000 8 K K/W
SA

~ (Sine)
K/

=
W

180° /W
0.

-
02

(Rect) 0.1
800 800
K/

2K
W

/W
0.1
-Δ

6K
R

600 600 /W
0.25
K/W
400 400
0.4 K
2 x VSK.196.. Series /W
Single phase bridge 0.7 K/W
200 200
Connected
TJ = 150 °C
0 0
0 100 200 300 400 0 25 50 75 100 125 150

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 17 - On-State Power Loss Characteristics

Revision: 04-May-17 6 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
1800 1800

Maximum Total Power Loss (W)

Maximum Total Power Loss (W)

1600 + 1600

0.

R th
04
~ 0.
06

SA
K/
1400 120° 1400 K/

=
- W

0.
(Rect) 0.0

12
1200 1200 8K

K/
/W

W
1000 1000

-Δ
0.1
2K

R
/W
800 800 0.1
6K
/W
600 600 0.25
3 x VSK.196.. Series K/W
400 Three phase bridge 400 0.4 K
/W
Connected
200 TJ = 150 °C 200

0 0
0 100 200 300 400 500 600 0 25 50 75 100 125 150

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 18 - On-State Power Loss Characteristics

160 350
VSK.236.. Series 180°
150 RthJC (DC) = 0.14 K/W 120°
Maximum Average Forward
300
Maximum Allowable Case

90°
140 60°
Temperature (°C)

Power Loss (W) 250 30°

Ø RMS limit
130
Conduction angle 200
120
150
110 Ø
Conduction angle
30° 100
100 60°
90° VSK.236.. Series
90 50 TJ = 150 °C
120°
180°
80 0
0 50 100 150 200 250 0 50 100 150 200 250

Average Forward Current (A) Average Forward Current (A)

Fig. 19 - Current Ratings Characteristics Fig. 21 - On-State Power Loss Characteristics

150 450
VSK.236.. Series DC
140 RthJC (DC) = 0.14 K/W 400 180°
Maximum Average Forward
Maximum Allowable Case

120°
350 90°
130
Temperature (°C)

Power Loss (W)

Ø 60°
300 RMS limit
120 Conduction period 30°
250
110
200
Ø
100 30°
150 Conduction period
60°
90 90° 100 VSK.236.. Series
120° Per junction
80 50 TJ = 150 °C
180° DC
70 0
0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400

Average Forward Current (A) Average Forward Current (A)

Fig. 20 - Current Ratings Characteristics Fig. 22 - On-State Power Loss Characteristics

Revision: 04-May-17 7 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
5000 5500
At any rated load condition and with Maximum non-repetitive surge current
rated VRRM applied following surge. 5000 versus pulse train duration.
4500 Initial TJ = 150 °C Initial TJ = 150 °C
at 60 Hz 0.0083 s 4500 No voltage reapplied
Peak Half Sine Wave

Peak Half Sine Wave

Forward Current (A)
Forward Curren (A)

4000 at 50 Hz 0.0100 s Rated VRRM reapplied

4000
3500 3500

3000 3000

2500
2500
2000
2000 VSK.236.. Series VSK.236.. Series
1500

1500 1000
1 10 100 0.01 0.1 1.0

Number of Equal Amplitude Half Pulse Train Duration (s)

Cycle Current Pulse (A)
Fig. 23 - Maximum Non-Repetitive Surge Current Fig. 24 - Maximum Non-Repetitive Surge Current

450 450
0.
400 400 16

R th
0.
DC 25 K/

SA
Maximum Total Forward

Maximum Total Forward K/ W

=
350 350 W

0.1
0.3
Power Loss (W)

Power Loss (W)

5K

K/
300 300 /W

W
-Δ
250 250 0.5
K/W

R
200 200 0.7
K/W
150 150

100 VSK.236.. Series 100

Per junction
50 TJ = 150 °C 50

0 0
0 50 100 150 200 250 300 350 0 25 50 75 100 125 150

Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 25 - On-State Power Loss Characteristics

1600 1600
R
Maximum Total Power Loss (W)

Maximum Total Power Loss (W)

th
1400 180° 1400 0. SA
04 =
+ (Sine) K/ 0.
0.0 W 02
1200 ~ 180° 1200 6K K/
- (Rect) 0.0 /W W
8K -Δ
1000 1000 /W R
0.1
800 800 2K
/W
0.1
6K
600 600 /W
0.25 K
/W
400 2 x VSK.236.. Series 400 0.4 K/W
Single phase bridge
200 Connected 200
TJ = 150 °C
0 0
0 100 200 300 400 500 0 25 50 75 100 125 150

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 26 - On-State Power Loss Characteristics

Revision: 04-May-17 8 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
2500 2500
Maximum Total Power Loss (W)

Maximum Total Power Loss (W)

+
R
2000 ~ 2000
th
SA
0.0 =
- 4K 0.
120° 02
/W K/
(Rect) 0.0 W
1500 1500 6K -Δ
/W R
0.1
K/W
1000 1000
0.16
K/W
3 x VSK.236.. Series
500 Three phase bridge 500 0.3 K/W
Connected
0.7 K/W
TJ = 150 °C
0 0
0 100 200 300 400 500 600 700 0 25 50 75 100 125 150

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 27 - On-State Power Loss Characteristics

10 000 10 000
Instantaneous On-State Current (A)

Instantaneous On-State Current (A)

TJ = 25 °C

1000 1000 TJ = 150 °C

TJ = 25 °C
100 100
TJ = 150 °C

10 10
VSK.166.. Series VSK.236.. Series
Per junction Per junction

1 1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 2.0 3.0 4.0 5.0

Instantaneous On-State Voltage (V) Instantaneous On-State Voltage (V)

Fig. 28 - On-State Voltage Drop Characteristics Fig. 30 - On-State Voltage Drop Characteristics

10 000
ZthJC - Transient Thermal Impedance

1
Instantaneous On-State Current (A)

TJ = 25 °C Steady state value

(DC operation)
1000
TJ = 150 °C

100 0.1

10
VSK.196.. Series
Per junction VSK.166.. Series

1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.01 0.1 1 10

Instantaneous On-State Voltage (V) Square Wave Pulse Duration (s)

Fig. 29 - On-State Voltage Drop Characteristics Fig. 31 - Thermal Impedance ZthJC Characteristics

Revision: 04-May-17 9 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
1 1

ZthJC - Transient Thermal Impedance

ZthJC - Transient Thermal Impedance

Steady state value Steady state value

(DC operation) (DC operation)

0.1 0.1

VSK.236.. Series
VSK.196.. Series

0.01 0.01
0.01 0.1 1.0 10 0.01 0.1 1.0 10

Square Wave Pulse Duration (s) Square Wave Pulse Duration (s)
Fig. 32 - Thermal Impedance ZthJC Characteristics Fig. 33 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code VS-VS KD 236 16 PbF

1 2 3 4 5

1 - Vishay Semiconductors product

2 - Circuit configuration
3 - Current rating: IF(AV)
4 - Voltage code x 100 = VRRM
5 - PbF = Lead (Pb)-free

Note
• To order the optional hardware go to www.vishay.com/doc?95172

Revision: 04-May-17 10 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors

CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION CIRCUIT DRAWING
CONFIGURATION CODE

VSKD...

~ + -

Two diodes doubler circuit D

+

~ -

VSKC...
+ - -

Two diodes common cathode C

-

+ -

VSKJ...

- + +

Two diodes common anode J

+

- +

VSKE...
- +

Single diode E
+

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95254

Revision: 04-May-17 11 Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
Vishay Semiconductors

INT-A-PAK DBC

DIMENSIONS in millimeters (inches)

30 (1.18)

28 (1.10)
9 (0.33)

Ø 6.5 (Ø 0.25)
80 (3.15)

17 (0.67) 23 (0.91) 23 (0.91)

6
7
35 (1.38)

(0.57)
14.5

1 2 3
4
5

66 (2.60) 37 (1.44)
3 screws M6 x 10

94 (3.70)

Document Number: 95254 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 11-Dec-07 1
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2019 1 Document Number: 91000

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Vishay:
VS-VSKJ166/08PBF