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Datasheet
A Features
G
• AEC-Q101 qualified
• High junction temperature: Tj = 150 °C
K
TAB = A
• AC off state voltage: +/- 1200 V
• Nominal on-state current: 30 ARMS
• High noise immunity: 1000 V/μs
• Max. gate triggering current: 50 mA
G
K
A
• ECOPACK2 compliant component
TO-247 uninsulated
Applications
• Automotive applications: on board and off board battery charger
• Renewable energy inverters
• Solid state relay
• 3-Phase heating or motor soft start control
• UPS (uninterruptible power supply)
• Bypass SSR / hybrid relay
• Inrush current limiter in battery charger
• AC-DC voltage controlled rectifier
• Industrial welding systems
Product status
TN3050H-12WY Description
Product summary The TN3050H-12WY is an automotive grade SCR Thyristor designed for applications
such as automotive on-board chargers, solid state AC relays and stationary battery
IT(RMS) 30 A chargers.
VDRM/VRRM 1200 V This SCR Thyristor, rated for a 30 A RMS power switching, offers superior
VDSM/VRSM
performance in peak voltage robustness up to 1400 V and surge current handling up
1400 V
to 300 A sine wave pulse. Its key features allow the design of functions such as a 42
IGT 50 mA A RMS AC switch (dual back-to-back SCRs) and a 38 A average AC-DC controlled
rectifier bridge for inrush current limitation.
Tj 150 °C
Available in through-hole TO-247 package, this power package allows a thermal
operation up to 30 A RMS with a higher case temperature of 126 °C.
1 Characteristics
IG = 2 x IGT , tr ≤ 100 ns
dl/dt f = 50 Hz Tj = 150 °C 200 A/µs
Critical rate of rise of on-state current
IGM Peak forward gate current tp = 20 µs Tj = 150 °C 8 A
Min. 10
IGT VD = 12 V, RL = 33 Ω mA
Max. 50
VGT VD = 12 V, RL = 33 Ω Max. 1.3 V
IT = 20 A, dIT/dt = 10 A/µs, VR = 75 V,
tq Tj = 150 °C Typ. 150 µs
VD = 2/3 x VDRM, dVD/dt = 20 V/µs, tP = 100 µs
Tj = 25 °C Max. 5 µA
Tj = 150 °C Max. 5 mA
Figure 1. Maximum average power dissipation versus Figure 2. Average and DC on-state current versus case
average on-state current temperature
5 5
IT(AV) (A) T C (°C)
0 0
0 5 10 15 20 25 0 25 50 75 100 125 150
ITM(A)
1000 IT(AV) (A)
4.0
3.5
DC
100 3.0
2.5
α = 180 °
2.0
10 1.5
At Tj max : 1.0
Vto = 0.88 V
VTM (V) Rd = 14 mΩ 0.5
Tj = 150 °C Tj = 25 °C T a (°C)
1
0.0
0.0 1.0 2.0 3.0 4.0
0 25 50 75 100 125 150
Figure 5. Relative variation of thermal impedance junction Figure 6. Surge peak on-state current versus number of
to case and junction to ambient versus pulse duration cycles
K = [Zth/Rth] ITSM(A)
1.0E+00 350
Zth(j -c)
Zth(j -a) 300
tp=10ms
One cycle
250
1.0E-01 Non repetitive,Tj initial = 25 °C
VR = 0 V
200
150
1.0E-02
100 Repetitive, TC = 126 °C
50
t P (s) Number of cycles
1.0E-03 0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1 10 100 1000
Figure 7. Non repetitive surge peak on-state current for a Figure 8. Relative variation of holding and latching
sinusoidal pulse (tp < 10 ms) current versus junction temperature (typical values)
ITSM(A) IH , IL [T j ]/ IH , IL [T j = 25 °C]
10000 2.0
dI/dt limitation: 200 A/µs Tj initial = 25 °C
VR = 0 V
1.8
ITSM IH
1.5
1000
1.3
IL
1.0
100
0.8
tP (ms) 0.5
Tj(°C)
10 0.3
0.01 0.10 1.00 10.00 -50 -25 0 25 50 75 100 125 150
Figure 9. Relative variation of gate triggering current and Figure 10. Relative variation of the static dV/dt immunity
voltage versus junction temperature versus junction temperature (typical values)
6
IGT
VD = 0.67 x V DRM
1.5
5
4
1.0
VGT 3
2
0.5
1
Tj(°C) Tj (°C)
0.0 0
-50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150
Figure 11. Relative variation of leakage current versus junction temperature for different values of
blocking voltage
1.0E-01
VDRM = VRRM = 1200 V
1.0E-02
1.0E-04
Tj(°C)
1.0E-05
25 50 75 100 125 150
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
0075325_9
Dimensions
3 Ordering information
Revision history