New Product

GSIB2020 thru GSIB2080

Vishay General Semiconductor

Single-Phase Single In-Line Bridge Rectifiers

~ ~
~ • Solder dip 260 °C, 40 s
Case Style GSIB-5S
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 2500 VRMS
~
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
PRIMARY CHARACTERISTICS applications.
IF(AV) 20 A
VRRM 200 V to 800 V
MECHANICAL DATA
IFSM 240 A
Case: GSIB-5S
Epoxy meets UL 94V-0 flammability rating
IR 10 µA
Terminals: Matte tin plated leads, solderable per
VF 1.0 V
J-STD-002 and JESD22-B102
TJ max. 150 °C
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GSIB2020 GSIB2040 GSIB2060 GSIB2080 UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
Maximum RMS voltage VRMS 140 280 420 560 V
Maximum DC blocking voltage VDC 200 400 600 800 V
(1)
Maximum average forward TC = 87 °C 20
IF(AV) A
rectified output current at TA = 25 °C (2) 3.5
Peak forward surge current single sine-wave
IFSM 240 A
superimposed on rated load
Rating for fusing (t < 8.3 ms) I2t 240 A2 s
Operating junction and storage temperature
TJ, TSTG - 55 to + 150 °C
range
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. without heatsink

Document Number: 88645 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Jan-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1
 New Product
GSIB2020 thru GSIB2080
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL GSIB2020 GSIB2040 GSIB2060 GSIB2080 UNIT
Maximum instantaneous forward
10 A VF 1.00 V
voltage drop per diode
Maximum DC reverse current at TA = 25 °C 10
IR µA
rated DC blocking voltage per diode TA = 125 °C 250

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GSIB2020 GSIB2040 GSIB2060 GSIB2080 UNIT
(2)
RθJA 22
Typical thermal resistance °C/W
RθJC 1.5 (1)
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. without heatsink
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GSIB2060-E3/45 7.0 45 20 Tube

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

30 400
Average Forward Output Current (A)

Peak Forward Surge Current (A)

25 350

Heatsink Mounting, TC 300

20
200
15
150
10
100

5 P.C.B. Mounting, TA 50
1.0 Cycle

0 0
0 25 50 75 100 125 150 1 10 100
Temperature (°C) Number of Cycles at 60 Hz

Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88645
2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 31-Jan-08
 New Product
GSIB2020 thru GSIB2080
Vishay General Semiconductor

100 1000
Instantaneous Forward Current (A)

Junction Capacitance (pF)

10
100

10
0.1

0.01 1
0.6 0.8 1.0 1.2 1.4 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode

1000 10

Transient Thermal Impedance (°C/W)

Instantaneous Reverse Current (µA)

TA = 125 °C

100

10 1

TA = 25 °C

0.1 0.1
0 20 40 60 80 100 0.01 0.1 1 10
Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s)

Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in millimeters

Case Style GSIB-5S
4.6 ± 0.2

3.6 ± 0.2
30 ± 0.3
3.5 ± 0.2

3.2 ± 0.2
20 ± 0.3

11 ± 0.2

+
5

2.5 ± 0.2
17.5 ± 0.5
4 ± 0.2

2.2 ± 0.2

1 ± 0.1 0.7 ± 0.1

7.5 7.5
10 ± 0.2 ± 0.2 ± 0.2 2.7 ± 0.2

Document Number: 88645 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Jan-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3
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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1