IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 68, NO.
10, OCTOBER 2021
Improvement on the Temporal Response of CZT
γ-Ray Detector by Infrared Illumination
Xiang Chen , Zhao-Hui Song, Yi Lu, Yan Ma, Long Hou, and He-Tong Han
Abstract— The temporal response of CdZnTe (CZT) detector
to γ-ray is experimentally studied in this article. Infrared (IR)
illumination is utilized to improve the performance of CZT
detector. The results show that with no IR illumination operated
on the CZT detector, the output signal of the CZT detector
appears as a short overshoot process (sharp peak) at the begin-
ning of stable γ-ray irradiation. After the sharp peak, a decay
process follows, and finally, a stable output of CZT detector is
achieved. IR illumination can eliminate the instability of CZT
detector under γ-ray irradiation, such as the output overshoot
of detector (sharp peak) during the transition state. With the
increase of IR illumination intensity, the sharp peak disappears
gradually and the temporal response of CZT detector follows
the intensity of γ-ray irradiation without transition state. The
fitting time constant of the sharp peak is in good consistency
with the typical detrapping lifetime on the order of seconds.
The stable current of CZT γ-ray detector can be improved by
8.2% due to IR illumination, which can also be explained by
the prefilling effects of IR illumination on the defect level. The
sharp peak in the temporal response of CZT detector is probably
caused by the deep level, related to the Te antisite-related deep
donors. The current uncertainty of CZT γ-ray detector under
IR illumination is smaller than 1.4%, which is small enough to
be ignored. The flux rate response of CZT detector can also be
improved by IR illumination. This study will provide significant
supports for the further application of CZT material in radiation
measurements.
Index Terms— γ-ray, CdZnTe (CZT), infrared (IR) illumina-
tion, photocurrent, temporal response, uncertainty.
I. I NTRODUCTION
T HE CdZnTe (CZT) crystal possesses high resistivity,
wide bandgap (∼1.52 eV), high γ/X-ray stopping ability,
high mobility-lifetime product, and so on. Due to all these
properties, the CZT detector can be operated at room temper-
ature with a low dark current, and the whole system can be
simplified within centimeter-scale space.
Manuscript received March 26, 2021; accepted September 3, 2021. Date
of publication September 9, 2021; date of current version October 18, 2021.
This work was supported in part by the National Natural Science Foundation
of China under Grant 11535010 and in part by the State Key Laboratory of
Intense Pulsed Radiation Simulation and Effect under Grant SKLIPR1805.
Xiang Chen is with China Institute of Atomic Energy, Beijing 102413,
China, on leave from the Northwest Institute of Nuclear Technology,
Xi’an 710024, China (e-mail: chenxiang@nint.ac.cn).
Zhao-Hui Song, Yi Lu, Yan Ma, and He-Tong Han are with the
Northwest Institute of Nuclear Technology, Xi’an 710024, China (e-mail:
songzhaohui@nint.ac.cn; luyi@nint.ac.cn; mayan@nint.ac.cn; hanhetong@
nint.ac.cn).
Long Hou is with China Institute of Atomic Energy, Beijing 102413, China
(e-mail: houl_401@sohu.com).
Color versions of one or more figures in this article are available at
https://doi.org/10.1109/TNS.2021.3111090.
Digital Object Identifier 10.1109/TNS.2021.3111090
0018-9499 © 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
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2533
Fast temporal response ability is important for high flux
X-ray application (108 X/cm2 /s or even higher). Limited by the
high densities of impurities and defects, excessive space charge
accumulation will occur under high flux operation (also called
polarization). The charged carrier dynamic process between
defect occupation and charge injection from X-ray will last
several milliseconds before the signal stabilizes [1], [2]. This
unstable process before signal stability in the CZT detector
will greatly limit its further application.
It has been reported that the electric field distribution
in CZT crystal can be probed by means of the Pockels
effect and the internal electric field can be controlled by
infrared (IR) illumination [3]–[10]. From the Pockels images,
the electric field between the cathode and anode planar con-
tacts can be acquired using the crossed polarizer method [3].
Rejhon et al. [4] demonstrated that deep levels are responsible
for the polarization of CZT detector under high photon fluxes,
including E V + 0.41 eV, E C − 0.75 eV, and E C − 0.58 eV.
Xu et al. [5] and Zhang et al. [6] confirmed the existence of
the deep donor level of E C −0.58 eV (or 0.57 eV) by the ther-
mally stimulated current (TSC) and the photo-induced current
transient spectroscopy (PICTS), respectively. Teague et al. [7]
confirmed that the increase in bulk current during IR illumi-
nation is attributed to the detrapping of the charge carriers
and the increase during above bandgap light illumination is
largely attributed to the generation of electron-hole pairs.
Dedic et al. [8], Franc et al. [9], Pekarek et al. [10], and
Washington et al. [11] verified the feasibility of depolarization
on CZT detector by IR illumination.
Since IR illumination can depolarize the CZT detector,
it might also improve the temporal response of CZT detector
under γ-ray irradiation. In this article, careful experiments
are carried out to study the effect of IR illumination on the
unstable charged carrier dynamic process in the CZT detector
exposed by high flux rate γ-ray.
II. T HEORY
When the CZT crystal is irradiated by high γ-ray flux rate,
large amounts of free electron–hole pairs are generated and
uniformly distributed in the whole volume. Free electrons
are drifted toward the anode and holes are drifted to the
cathode. During the transport process of carriers, it will be
affected by defects in CZT crystal, such as trapping, detrap-
ping, and recombination. Since deep levels are responsible
for the polarization of CZT detector under high photon flux
rates, our concentration is focused on the effects of deep
2534
Fig. 1. Six main transit processes for n-type and p-type defects in CZT
crystal.
TABLE I
T YPICAL D EFECT PARAMETERS IN CZT C RYSTAL
defects on carriers [4]. There are two types of defects in
CZT crystal, n-type and p-type. For each type of defect,
three transit processes exist, including trapping, detrapping,
and recombination. Six main transit processes can be taken
to describe the effects of defects (both n-type and p-type)
on carriers, as shown in Fig. 1. The lifetimes for six transit
processes can be described by the following equations [2]:
1
τet =
(Nt − n t )σet v th
1
τed =
NC σet v th exp(−(E C − E et )/kT )
1 deposition after chemical polishing. Typical defect parameters
τer =
pt σer v th
τht =
1
(Pt − pt )σht v th
1 (NINT), Xi’an, China. The activity of 60 Co source is about
τhd =
NV σht v th exp(−(E ht − E V )/kT )
1 a micro electrometer (Keithley 6517A), which can acquire
τhr =
n t σhr v th
where Nt is the total electron trapping state density with
an energy level of E et , n t is the trapped electron density at
this state, Pt is the total hole trapping state density with an
energy level of E ht , pt is the trapped hole density at this state,
v th is the thermal velocity, Nc is the available state density
for the conduction band, Nv is the available state density for
the valence band, σet is the electron capture cross section,
σer is the recombination cross section between the free electron
and the trapped holes, σht is the hole trapping cross section,
σhr is the hole recombination cross section with free electrons,
k is Boltzmann’s constant, and T is the Kelvin temperature.
The typical defect levels of In-doped CZT crystals (from
Northwestern Polytechnical University, China) are listed
in Table I, which is experimentally tested by the method of
TSC and thermoelectric effect spectroscopy (TEES) [5].
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 68, NO. 10, OCTOBER 2021
Fig. 2. Layout of system.
Since deep levels are responsible for the polarization of
CZT detector under high photon flux rates, the detrapping
lifetimes for deep defect levels on carriers are estimated based
on the typical parameters below. The electron trapping cross
section is about 6 × 10−13 cm2 , and the carrier recombination
cross section between trapped electron and free hole is about
10−14 cm2 [2], [6]. Nc is at the magnitude of 1017 cm−3 .
Nt is at the magnitude of 1013 cm−3 . n t is at the magnitude
of 104 cm−3 . The product of k and T (300 K) is 0.026 eV.
E c − E et is set as 0.58 eV. The thermal velocity is about
107 cm/s. Based on these parameters, the estimated detrapping
lifetimes for T1, T2, T3, and T4 defects are at the magnitude
of 0.1 ns, 1 ns, 100 ns, and 1 s, respectively. The estimated
detrapping lifetime of the deep level is in accordance with the
results in [6], which is also at the magnitude of second.
III. E XPERIMENT
(1) In-doped CZT crystal with the dimension of 5 mm ×
5 mm × 2 mm is grown with the vertical Bridgman (VB)
(2) method by Northwestern Polytechnic University, China. Elec-
trodes are deposited on the 5 mm × 5 mm surfaces by gold
(3)
are listed in Table I [12], [13]. The temporal response of
(4) CZT detector to γ-ray is calibrated on a 60 Co γ-ray radiation
instrument at the Northwest Institute of Nuclear Technology
(5)
2600 Ci. The output current of CZT detector is recorded by
(6) current signals smaller than pA. The working bias voltage
(600 V) is supplied by a high-voltage source (Stanford PS350).
The peak wavelength of IR LED is 940 nm and the spectral
bandwidth is 45 nm. It is supplied by a current source
(Keysight U8032A). The layout of the system is shown
in Fig. 2.
Since the activity of 60 Co source is about 2600 Ci, it is
surrounded by thick lead walls. Only a small hole remains
in the wall to utilize γ-ray. A lead shutter is set at the front
of the hole. Radiation and nonradiation states are achieved by
lifting or putting down the shutter. To test the duration time of
the lifting process, a photoelectric tube (named GD) is used.
GD possesses a fast time response of ns [14]. The testing result
is shown in Fig. 3, in which the black line is the responding
curve from GD and the red line is from the CZT detector.
About 1.7 s is needed for the lifting process of the shutter.
It verifies that the linear increases of the current (both from
CHEN et al.: IMPROVEMENT ON TEMPORAL RESPONSE OF CZT γ-RAY DETECTOR BY IR ILLUMINATION
Fig. 3. Testing results on the duration time for the lifting process of the
shutter.
Fig. 4. Temporal responses of CZT detector to γ-ray under different IR
photocurrents. (a) Effects of IR photocurrent on Ibase . (b) Effects of IR
photocurrent on sharp peak, and Ibase values are deleted.
the GD and CZT detector) are related to the lifting process
of the shutter and the sharp peak is only related to the CZT
detector.
During the experiment, IR illumination is always irradiated
on the surface of CZT crystal before and after γ-ray, as shown
in Fig. 2. IR photocurrent refers to the current generated by
IR illumination. With the change of IR illumination intensity,
the IR photocurrents from the CZT detector are different,
as shown in Fig. 4(a). Ibase is the sum between the intrinsic
dark current (2.8 nA) and IR photocurrent of CZT detector
before γ-ray irradiation. Isignal is the output current of CZT
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2535
detector irradiated by γ-ray and IR illumination together. The
difference between Isignal and Ibase is the net current induced by
γ-ray, which is also called the stable state current. As shown
in Fig. 4(a), the stable state current is about 23.5 nA under
different IR photocurrents. During the analysis of the shape
changes, the IR photocurrent of CZT detector is deducted
from Isignal . However, IR photocurrent is used as the key
parameter to describe the effect of IR illumination on the
CZT detector. This is due to the effect of IR illumination,
which transits electrons from the valence to the defect level
to improve the defect occupation.
After the deduction of IR photocurrent, the temporal
responses of CZT detector to γ-ray under different IR pho-
tocurrents are aligned at the same Ibase . The effects of IR
photocurrent on the sharp peaks are shown in Fig. 4(b). The
flux rate at the position of CZT detector is measured by a
flux rate instrument (named UNIDOS), which is 5.403 Gy/h.
As shown in Fig. 4(b), while no IR illumination is operated on
CZT detector, a sharp peak appears at the beginning of γ-ray
irradiation. After the sharp peak, a stable state is achieved after
a decay process. The time scale of the sharp peak is at the
magnitude of second. Since the switch-on time of irradiation
and RC constant of the circuit are both shorter than 10 ms, this
sharp peak and the decay process are not related to the circuit
factors. With the increase of IR photocurrent, the amplitude
of the sharp peak decreases and nearly disappears when the
IR photocurrent is larger than 40 nA. The stable state current
increases slightly with the increase of IR photocurrents. Under
different IR photocurrents, the temporal responses of CZT
detector to γ-ray irradiation are analyzed, including shape
changes (such as the sharp peak, the stable current value, and
the decay process), current uncertainty, and flux rate response.
IV. D ISCUSSION
A. Shape Changes Caused by IR Illumination
1) Sharp Peaks and Stable Current Value: With no IR
illumination and γ-ray irradiation, the output current of CZT
detector is attributed by the stable dynamic process between
carrier generation (such as carrier detrapping and electrode
injection) and carrier disappearance (trapping, recombination,
and so on). When γ-ray is exposed, the stable dynamic process
is broken and a new stable state will be built under γ-ray
irradiation. As shown in Fig. 4(b), the built-up process consists
of the linear increase of current, a sharp peak existing at
the beginning of the irradiation, a stable state, and a decay
process from the sharp peak to the stable state. The linear
increase of current is related to the lifting process of the
shutter, as shown in Fig. 3. The sharp peak might be due to
the excessive carrier traps at the beginning of γ-ray irradiation,
which would detrap the redundant carriers before the stable
state. The decay process is the built-up of a new charged
carrier dynamic equilibrium between the defect occupation and
the charge injection from γ-ray irradiation.
IR illumination can help the transit of electron from valence
to the defect level. This transit process can be taken as a
prefilling process for the defect level, which will reduce the
number of trapping carriers generated by γ-rays. As shown
2536 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 68, NO. 10, OCTOBER 2021

Fig. 5. Characteristic current versus IR photocurrent of CZT detector.

Fig. 6. Bi-exponential fitting curves of the decay process in the temporal

in Fig. 5, with the increase of IR photocurrent, the sharp peak response curves of CZT detector under different IR photocurrents. (a) IR pho-
values decrease and the stable current values increase. The tocurrent = 0 nA. (b) IR photocurrent = 10 nA. (c) IR photocurrent = 18 nA.
(d) IR photocurrent = 40 nA.
decrease of sharp peak value represents the suppression of
the excessive carrier traps. The increase of the stable current
TABLE II
values refers to the effects of the prefilling process. When IR
B I -E XPONENTIAL F ITTING T IME C ONSTANTS OF CZT D ETECTOR
photocurrent reaches 50 nA, the sharp peak disappears and U NDER D IFFERENT IR P HOTOCURRENTS
the stable current value keeps constant. The stable current
value is improved from 23.2 nA (IR photocurrent = 0 nA)
to 25.1 nA (IR photocurrent = 50 nA). This increased stable
current value refers to the prefilling effects on the carrier
trapping process. Thus, more carriers generated by γ-ray are
collected and the collection efficiency of the generated carriers
in the CZT detector is improved by 8.2%.
The effect of IR illumination is to transit electrons from
the valence to the defect level and from the defect level to
the conduction. The 50-nA photocurrent means that about
When IR photocurrent is over 18 nA, the bi-exponential
3.1 × 1011 free carriers (free holes or free electrons) are
fitting time constants become to the same value within the time
generated within 1 s. The corresponding generated free carrier
of the red lines in Fig. 6. Single exponential fitting method
concentration in the 5 mm × 5 mm × 2 mm volume is
is used and the fitting results are listed in Table II. With
6.2 × 1012 cm−3 . This carrier concentration is comparable
the increase of IR photocurrent, τ1 gets smaller and finally
to the T4 defect concentration in Table I, which is reported
disappears when the IR photocurrent is over 18 nA, as shown
as 5.82 × 1013 cm−3 by TEES and TSC methods [5]. Before
in Fig. 6. τ2 also gets smaller from 1.85 to 0.47 s, while
the IR photocurrent reaches 150 nA (see Fig. 5), the stable
the IR photocurrent increases from 0 to 40 nA. This result
current value of CZT detector keeps constant and decreases
means that the influence of deep defect level on the temporal
with the further increase of IR photocurrent. This decrease
response of CZT γ-ray detector is at the magnitude of second,
of the stable current value might be related to the stronger
which is in good accordance with the estimated detrapping
depletion layer near the cathode caused by the excess car-
lifetime of deep defect level. The deep level dominates the
rier injection. To keep the stability of CZT γ-ray detector,
unstable dynamic process in the temporal response of CZT
the IR photocurrent of CZT γ-ray detector should be limited
detector. For the experimental CZT crystal, the main deep
to 50–150 nA.
donor defect exists at the level of E C − 0.58 eV, related to the
2) Decay Process: With no IR illumination, a sharp Te antisite-related deep donors. IR illumination can actually
peak appears at the beginning of the irradiation, as shown impress the effect of the defect occupation and shorten the
in Fig. 4(b). With the increase of IR photocurrent, the sharp unstable dynamic process to a stable state under high flux rate
peak disappears gradually. Deep levels are reported to be γ-ray irradiation.
responsible for the polarization of CZT detector under high
photon fluxes [4]. IR illumination has a “prefilling” effect on
the deep level. This sharp peak is probably related to the deep B. Current Uncertainty Analysis
defect level. Assuming that the detrapping process follows The net current uncertainty of CZT γ-ray detector induced
exponential decay order, a bi-exponential fitting method is by different IR photocurrents is analyzed in Fig. 7. Under no
used to analyze the decay process, as shown in Fig. 6. The IR illumination, the current uncertainty is smaller than 0.2%.
fitting parameters are listed in Table II. With the increase of IR photocurrent, the current uncertainty

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CHEN et al.: IMPROVEMENT ON TEMPORAL RESPONSE OF CZT γ-RAY DETECTOR BY IR ILLUMINATION
Fig. 7. Current uncertainties of CZT detector under different IR
photocurrents.
also increases. When the IR photocurrent is within 50–150 nA,
the current uncertainty keeps a stable value of about 0.84%.
It is understandable that the increase of current uncertainty
is related to IR photocurrent. When IR illumination is turned
off, the net current of CZT detector is about 24 nA. Compared
with this net current, IR photocurrent is much larger. The
current uncertainty generated by IR photocurrent cannot be
ignored for the net current of CZT detector with no IR
illumination. This is the reason for the increase of current
uncertainty under IR illumination. When the IR photocurrent
of CZT detector is smaller than 200 nA, the current uncertainty
is lower than 1.4%. Under this condition, the influence of
current uncertainty induced by IR illumination can be ignored
in the temporal response of CZT detector.
C. Flux Rate Response
Flux rate response of CZT detector under different γ-ray
intensities is also investigated. Near the hole in the lead wall,
γ-ray irradiation does not distribute uniformly. To assure the
uniform γ-ray irradiation on CZT detector, the CZT detector
is set at the place, 2.2 and 3.1 m away from 60 Co source.
The flux rate at the position of 2.2 and 3.1 m is measured
by UNIDOS, which are 5.403 and 2.590 Gy/h, respectively.
The sensitivity of CZT detector to γ-ray is defined as the ratio
between the stable current and the flux rate. Sensitivity versus
IR photocurrent curves of CZT detector are shown in Fig. 8.
When no IR is illuminated on CZT detector, the absolute
sensitivity difference is 9.7%. Under different IR photocurrents
(90, 100, and 110 nA), the absolute response differences are
5.2%, 3.9%, and 2.6%, respectively, much lower than that with
no IR illumination.
This difference is mainly related to the carrier com-
bination under different γ-ray intensities. Based on (3),
the lifetime of electron recombination τer is reciprocal to the
trapped hole density pt . With the increase of γ-ray intensity,
pt also increases. The increase of pt results in the decrease
of τer , meaning that the probability of electron recombination
becomes higher. More electrons will be trapped and recom-
bined by the deep level. With the increase of γ-ray intensity,
the sensitivity of CZT detector becomes lower, and this is
the reason for the sensitivity difference of 9.7% with no IR
illumination under 5.403 and 2.590 Gy/h.
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2537
Fig. 8. Flux rate responses of CZT detector under 5.403 and 2.590 Gy/h.
IR illumination can prefill the deep level and suppress the
effects of deep levels on the sensitivity of CZT γ-ray detector.
With the increase of IR illumination, the sensitivity difference
of CZT detector becomes lower. The flux rate response of CZT
detector can be improved by IR illumination.
V. C ONCLUSION
In this article, the temporal response of CZT detector to
γ-ray is experimentally studied. IR illumination is used to
improve the performance of CZT detector, including the output
stability, the current uncertainty, and the flux rate response.
The stability of CZT γ-ray detector refers to the current shape,
such as the sharp peak, the decay process, and the stable state.
The results show that the following conditions hold.
1) IR illumination can improve the stability of CZT detec-
tor under γ-ray irradiation. With the increase of IR pho-
tocurrent, the sharp peak disappears gradually and the
temporal response of CZT detector follows the intensity
of γ-ray irradiation without transition state. The fitting
time constant of the decay process is at the magnitude of
second, which is in good accordance with the estimated
detrapping lifetime of deep level. The stable current of
CZT detector to γ-ray irradiation can be improved by
8.2% due to the prefilling effects of IR illumination on
the defect level.
2) While IR photocurrent is smaller than 200 nA, the influ-
ence of current uncertainty induced by IR illumination
is smaller than 1.4% and can be ignored in the temporal
response of CZT detector.
3) The flux rate response of CZT detector can also be
improved by IR illumination, which is attributed to
the prefilling effect of IR illumination on the deep
level.
4) The deep level is verified to dominate the unstable
dynamic process in the temporal response of CZT
detector, which is related to the Te antisite-related deep
donors.
This work solves the instability problems during the sen-
sitivity calibration process of CZT γ-ray detector, which
will provide significant experimental supports for the further
application of CZT material.
2538
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