017-App Note A LOAD PULL

APPLICATION NOTE
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor
(FET) Model
Introduction
Large signal models for RF power transistors, if matched well with measured performance,
are an ideal tool for reducing PA design iterations, design time and development costs. Self heating of
the device and the complex dependence of the nonlinearity of component parameters on signal
level, thermal effects and ambient conditions often makes it difficult to predict exactly the large
signal performance of RF power devices. Cree’s GaN HEMT devices on SiC substrate, because of
their high efficiency, high gain and relatively easy matching characteristics are becoming popular in
many applications. As such the users of these devices look to the accuracy of models to be able to evaluate
Cree’s devices within their simulation environments. One of the main advantages of this approach is that no hardware
needs to be developed, and there is no need for time consuming and potentially inaccurate load-pull measurements. It is
also possible to do more in-depth what-if analysis, which enables faster design cycles, closes links with layout and results
in more first pass design successes.
At Cree, there is significant historical information available to demonstrate successful use of large signal models
in validating designs over drive levels, frequency, bias, and temperature for many diverse design practices for discrete,
hybrid and MMIC products development.
Cree’s GaN HEMT Large Signal Model
The model is based on an equivalent-circuit approach where parameter extraction is relatively . simple. It
has built in process sensitivity on individual elements. The model can be implemented easily using commercial harmonic
balance simulators and the non-linearity is introduced as required by element. The Drain current source
has been shown to have the dominant non-linearity. The gate current formulation includes
breakdown and forward conduction and all voltage variations of parasitic capacitances are
derived from charge formulations.
The model was derived by using on-wafer s-parameters measurements of 0.5 mm HEMT
at 25°C baseplate temperature. The major challenge of this method was the scaling from
v. A
reasonable test cells to large periphery transistors. However, design after design show
APPNOTE-017 Re
successful implementation for scaling factors >100:1. The non-linear model fits small-signal
parameters over a range of bias voltages where all measurements are performed using 1% duty cycle, 20ms pulsed
bias to control thermal effects.
:
Application Note
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered Cree, Inc.
trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or 4600 Silicon Drive
vendor endorsement, sponsorship or association. Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Load Pull Measurement Data As A Starting Point For Large Signal Design
It has been an industry practice that designers depend for their large signal designs, on Load Pull measurements
and as such vendors usually provide load pull data for the designers to implement the matching circuits for power
transistors. As mentioned earlier if large signal models for large periphery devices can be proven to match well with
Load Pull data, the need for time consuming load pull measurements can be eliminated and load pull on the simulation
bench can be relied upon to give accurate information for design. In order to demonstrate the accuracy of Cree’s Large
Signal models this application note provides a comparison of measured versus model data for large periphery GaN HEMT
transistors. This application note shows close agreement between modeled and load pull data thus eliminating the need
for load pull measurements. Designers can depend on a first pass design success using Cree GaN model even for large
signal designs of large periphery devices.
As part of this application note, two large periphery Cree GaN transistors have been chosen and rigorous load pull
measurements have been made to show agreement between these measured results and those derived from simulation
of large signal performance using Cree large signal models.
Modeled Vs. Measured Validation of a 100 Watt GaN HEMT, CGHV27100F
A carefully designed break apart fixture which accurately measures very low impedance yet high Q (typical of
large periphery transistor input and output impedances) was used to perform load pull measurements using a Maury
Microwave load pull system. The metrics used for validation of the models were saturated power, gain and PAE at
saturated power.
Copyright © 2014-2015 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this Cree, Inc.
copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks 4600 Silicon Drive
of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor Durham, NC 27703
endorsement, sponsorship or association. USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
2 APPNOTE-017 Rev. A
Modeled Vs. Measured Validation of CGHV27100F
In Figure 1, the modeled CGHV27100F Gain and PAE vs Output Power

with Tuner Impedances set for best Output Power
versus measured performance of the (VDD = 50 V, IDQ = 500 mA,
CGHV27100F with optimized Load and Pulse Width = 100 µs and Duty Cycle = 10%)
24 72
Source Pull for gain and power added efficiency
22 66
compared with model based simulation results is
20 60
presented. The impedances for Figure 1 were 18 54
set to optimize for best output power and
Power Added Efficiency (%)

16 48
Power Gain (dB)

Power Added Efficiency (PAE). In Figure 2 the 14 42
12 36
impedances are optimized for output power,
10 30
plotting the modeled versus measured
8 Cree Model_Power Gain 24
performance of saturated output power and 6

Load Pull Power Gain
18
Cree Model PAE
Power Added Efficiency (PAE) versus frequency. 4 12
Load Pull PAE
In this plot, the discrete data points represent 2 6
individual source and load conditions. 0

39 40 41 42 43 44 45 46 47 48 49 50 51 52 53
0
Output Power (dBm)
Figure 1.
CGHV27100F Output Power and PAE vs Frequency

(VDD = 50 V, IDQ = 500 mA,
Pulse Width = 100 µs and Duty Cycle = 10%)
70
PAE Model
PAE Load Pull
67
Psat_Model
Psat_Load Pull
64
Saturated Output Power ( dBm), PAE (%)
61
58
55
52
49
46
43
40
2.54 2.56 2.58 2.60 2.62 2.64 2.66 2.68 2.70 2.72 2.74 2.76 2.78
Frequency (GHz)
Figure 2.
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Modeled Vs. Measured Validation of CGHV27100F
CGHV27100F Load Pull Contours for Output Power at
Figures 3, 4 and 5 show the CGHV27100F load pull 2.655 GHz Compared with Model-based Simulated Load
Contours. Blue = Measured, Red = Modeled
contours at 2.655 GHz compared with model-based
simulated load contours. The blue line is the
measured result. The red line is the simulated /
modeled result. Figure 3 shows contours for maximum
output power. Figure 4 shows contours for maximum
Power Added Efficiency (PAE). In Figure 5, the load pull
impedances are displayed for best output power.
Figure 3.
CGHV27100F Load Pull Contours for PAE at 2.655 GHz
Compared with Model-based Simulated PAE Contours. CGHV27100F Modeled vs Measured Optimal ZS for best
Blue = Measured, Red = Modeled. Output Power. Blue = Measured, Red = Modeled.
Figure 4. Figure 5.
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www.cree.com/rf
Modeled vs Measured Validation of CGHV27100F
Fig. 7: CGHV27100F Modeled vs Measured Optimal ZL for best Output Power.
CGHV27100F
Blue=Measured, Red Modeled vs Measured Optimal ZL for Best
= Modeled.
In Figure 6, the modeled vs measured performance Output Power. Blue = Measured, Red = Modeled.
based on the optimal load impedance for the best

output power of the CGHV27100F, sweeping frequency
from 2560MHz to 2750MHz. The plot is normalized to
10 ohms. The markers at 2655MHz indicate the Z0 = 10 
incredible accuracy of Cree’s proprietary large

signal model.
Table 1 shows the results of the modeled versus

measured performance of the CGHV27100F at PMAX.
The difference between the predicted performance
and the measured performance for saturated output
power (PSAT) is less than 0.4dB, Power Added Efficiency
(PAE), is less than 1.6%, and gain is less than 0.45dB.
Figure 6.
Copyright © 2013, Cree, Inc.
Measured Load Pull Data Model Prediction
ZSOURCE ZLOAD Best Power ZSOURCE ZLOAD Best Power
Frequency PSAT G a i n PSAT G a i n

R (Ω) jX (Ω) R (Ω) jX (Ω) PAE (%) R (Ω) jX (Ω) R (Ω) jX (Ω) PAE (%)
(GHz) (dBm) (dB) (dBm) (dB)
2.560 3.57 -3.0 11.1 -2.84 51.2 63.0 16.0 4.01 -3.9 10.7 -2.9 51.6 64.0 16.5
2.600 3.90 -3.2 11.0 -3.29 51.2 64.0 16.2 3.99 -3.3 11.2 -3.2 51.5 64.6 16.4
2.620 3.94 -3.4 11.0 -3.66 51.5 65.0 16.6 3.97 -3.1 10.9 -3.4 51.5 65.4 16.4
2.655 4.02 -3.6 11.1 -3.91 51.8 65.0 16.5 3.98 -3.0 11.0 -3.5 51.7 65.6 16.4
2.690 3.91 -3.9 11.3 -4.13 51.7 63.0 16.7 4.02 -2.9 11.2 -3.8 51.4 64.6 16.4
2.710 3.94 -4.1 11.6 -4.30 51.3 62.0 16.4 4.01 -2.7 11.7 -3.9 51.4 63.4 16.5
2.750 3.93 -4.0 12.1 -4.39 51.2 61.7 16.1 3.97 -2.6 11.8 -4.0 51.3 62.0 16.5
Table 1.
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Modeled vs Measured Validation of CGHV27100F Continued
Parameter Load Pull Measurement Model Based Simulations
Peak Output Power 51.8 dBm / 151 W 51.7 dBm / 148 W
Peak Efficiency 64 % 66 %
Gain at 30 dBm POUT 21.3 dB 21.0 dB
Gain at PSAT 16.5 dB 16.4 dB
Table 2.
Table 2 lists a summary of the modeled versus the measured results for peak power and efficiency as well as linear and
saturated gain. The conditions for Table 2 are pulsed at 100 micro seconds, 10% duty cycle, at 2.655 GHz.
The same break apart fixture mentioned earlier was used to perform load pull measurements on the CGHV27200F. Both the
CGHV27100F and CGHV27200F are housed in the same package. Same metrics for validation were also used for this part.
CGHV27200F Gain and PAE vs Output Power

(VDD = 50 V, IDQ = 1 A,
Pulse Width = 100 µs and Duty Cycle = 10%)
24 72
22 66
20 60
18 54
16 48
Power Gain (dB)
14 42
12 36
10 30
8 24
6 18
Cree Model_Power Gain

4 12
Load Pull Power Gain
Cree Model PAE
2 6
Load Pull PAE
0 0
40 42 44 46 48 50 52 54 56
Output Power (dBm)
Figure 7.
Figure 7 displays the modeled and measured results of the CGHV27200F with optimized load and source pull for power and
gain.
Fax: +1.919.869.2733
www.cree.com/rf
Figure 8 displays the modeled and measured CGHV27200F Output Power and PAE vs Frequency
results of the CGHV27200F with optimized load
(VDD = 50 V, IDQ = 1 A,
and source pull for power. The model displays very Pulse Width = 100 µs and Duty Cycle = 10%)
66
accurate predictions. Psat_Modeled
Psat_Load Pull
64
PAE Model
PAE Load Pull
The next set of figures includes load pull contours 62
on a Smith chart with modeled versus measured
Saturated Output Power (dBm),

60
performance under various optimizations.

58
56
Both Figures 9 and 10 are normalized to 5 ohms.
The blue curves are measured and the red curves 54
are modeled for both figures. 52
50
2.56 2.60 2.64 2.68 2.72 2.76
Frequency (GHz)
Figure 8.
CGHV27200F Load Fig. 12: CGHV27200F Load Pull contours for PAE at 2.655 GHz compared with model
27200F Load Pull contours forPull Contours
Output powerforatOutput Power
2.655 GHz compared CGHV27200F Load Pull Contours for PAE
at 2.655 GHz, Compared based
with simulated
Model-based
ased simulated load contours. Blue=Measured, Red = Modeled PAE contours. Blue=Measured,
at Red = Modeled.
2.655 GHz, Compared with Model-based
Simulated Load Contours Simulated Load Contours
c.
pg. 5
Figure 9. Copyright © 2013, Cree, Inc. Figure 10. pg.
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Fig. 14: CGHV27200F Continued
Modeled vs Measured Optimal ZL for best Output Power.
CGHV27200F Modeled vs Measured Optimal Zs for Blue=Measured,
best Output Power.Red = Modeled.
CGHV27200F Modeled vs Measured CGHV27200F Modeled vs Measured
easured, Red = Modeled.
Optimal ZSOURCE for Best Output Power Optimal ZLOAD for Best Output Power
Z0 = 5 
Z0 = 10 
013, Cree, Inc.

pg. 7
Figure 11. Copyright © 2013, Cree, Inc.
Figure 12. p
Figures 11 and 12 are normalized to 10 ohms and 5 ohms respectively. The blue curves are measured and the red curves
are modeled for both figures. Table 3 shows the results of the modeled versus
measured performance of the CGHV27200F at PMAX. The difference between the predicted performance
and the measured performance for saturated output power (PSAT) is less than 0.8dB, Power Added Efficiency
(PAE), is less than 1.4%, and gain is less than 0.7dB.
Measured Load Pull Data Model Prediction
ZSOURCE ZLOAD Best Power ZSOURCE ZLOAD Best Power
Frequency PSAT G a i n PSAT G a i n

R (Ω) jX (Ω) R (Ω) jX (Ω) PAE (%) R (Ω) jX (Ω) R (Ω) jX (Ω) PAE (%)
(GHz) (dBm) (dB) (dBm) (dB)
2.560 6.1 -12.0 3.4 -1.0 54.0 61.7 14.5 6.9 -10.4 3.4 -1.0 54.8 61.9 13.8
2.600 6.5 -11.6 3.3 -1.2 54.3 62.6 14.7 6.6 -10.6 3.2 -1.3 54.8 62.2 14.8
2.620 7.0 -9.7 3.1 -1.3 54.5 62.7 14.8 6.8 -11.4 3.1 -1.4 54.8 62.5 14.9
2.655 7.1 -10.9 2.9 -1.3 54.7 63.0 15.0 6.2 -10.8 3.0 -1.6 54.7 63.0 14.7
2.690 6.7 -9.2 2.7 -1.4 54.3 62.0 14.9 6.5 -10.6 2.8 -1.6 54.6 60.7 14.5
2.710 6.1 -10.0 2.5 -1.7 54.1 60.9 14.2 5.6 -10.7 2.6 -1.7 54.5 60.0 14.4
2.750 5.9 -9.1 2.6 -2.0 54.0 60.0 13.6 5.3 -10.8 2.5 -1.9 54.4 59.1 14.2
Table 3.
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Parameter Load Pull Measurement Model Based Simulations
Peak Output Power 54.7 dBm / 295 W 54.8 dBm / 300 W
Peak Efficiency 66 % 64 %
Gain at 30 dBm POUT 20.4 dB 20.7 dB
Gain at PSAT 15.0 dB 14.7 dB
Table 4.
Table 4 lists a summary of the modeled versus the measured results for peak power and efficiency as well as linear and
saturated gain. The conditions for Table 4 are pulsed at 100 micro seconds, 10% duty cycle, at 2.655 GHz.
Conclusions
Cree’s proprietary Large Signal Models were used in a harmonic balance simulator to compare measured and modeled data
for both the 100 W and 200 W transistors. The performance of these devices was verified using an industry standard load
pull system at optimal impedances over multiple frequencies. Also the power and efficiency contours around the optimal
impedances matched those provided by the model. The large signal model represents accurately the performance of the
devices and can be used to obtain the best performance of these devices while shortening the time to market with first pass
design success.
Fax: +1.919.869.2733
www.cree.com/rf

017-App Note A LOAD PULL

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APPLICATION NOTE

Cree’s GaN HEMT Large Signal Model

Modeled Vs. Measured Validation of a 100 Watt GaN HEMT, CGHV27100F

In Figure 1, the modeled CGHV27100F Gain and PAE vs Output Power

presented. The impedances for Figure 1 were 18 54

set to optimize for best output power and

Power Added Efficiency (%)

Power Gain (dB)

performance of saturated output power and 6

In this plot, the discrete data points represent 2 6

individual source and load conditions. 0

Output Power (dBm)

CGHV27100F Output Power and PAE vs Frequency

based on the optimal load impedance for the best

incredible accuracy of Cree’s proprietary large

Table 1 shows the results of the modeled versus

Measured Load Pull Data Model Prediction

ZSOURCE ZLOAD Best Power ZSOURCE ZLOAD Best Power

Frequency PSAT G a i n PSAT G a i n

Parameter Load Pull Measurement Model Based Simulations

Peak Output Power 51.8 dBm / 151 W 51.7 dBm / 148 W

Gain at 30 dBm POUT 21.3 dB 21.0 dB

Gain at PSAT 16.5 dB 16.4 dB

Modeled vs Measured Validation of CGHV27200F

CGHV27200F Gain and PAE vs Output Power

Cree Model_Power Gain

The next set of figures includes load pull contours 62

on a Smith chart with modeled versus measured

Saturated Output Power (dBm),

performance under various optimizations.

are modeled for both figures. 52

013, Cree, Inc.

ZSOURCE ZLOAD Best Power ZSOURCE ZLOAD Best Power

Frequency PSAT G a i n PSAT G a i n

Parameter Load Pull Measurement Model Based Simulations

Peak Output Power 54.7 dBm / 295 W 54.8 dBm / 300 W

Gain at 30 dBm POUT 20.4 dB 20.7 dB

Gain at PSAT 15.0 dB 14.7 dB

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