Dual-band substrate integrated waveguide models the velocity of light.

Two CSRRs are etched on the top layer

bandpass filter utilising complementary coupled with TE102 and TE201 modes, respectively, to achieve the two
passbands. Nodes 1, 2, 3 and 4 model TE102, TE201, CSRR1, and
split-ring resonators CSRR2, respectively. S and L account for the source and load, respect-
Hao Zhang, Wei Kang✉ and Wen Wu ively. As depicted in Fig. 3, CSRR1 is located at point A which is only
coupled with TE102 mode due to the electric field of TE201 mode gets its
minimum at point A. The coupling coefficient M13 would be controlled
A novel dual-band substrate integrated waveguide (SIW) bandpass
filter (BPF) based on complementary split-ring resonators (CSRRs) by the offset of the etched pattern from point A, represented by la. The
is proposed. It consists of an SIW dual-mode cavity loaded by two shorter the length of la is, the stronger the coupling will be as illustrated
additional CSRRs on its top layer. Both TE102 and TE201 modes in in Fig. 4. Similarly, CSRR2 is placed at point B on the top layer of the
the cavity can be excited by the proper positions of the feeding lines. substrate which only coupled with the TE201 mode. The coupling coeffi-
Two additional CSRRs are etched on the top layer coupled with the cient M24 would also be controlled by the offset of the etched pattern
TE102 and TE201 modes, respectively, to achieve the dual-frequency from point B, represented by lb. All the coupling coefficients in (3)
operation. Four transmission zeros are generated in the vicinity of can be calculated according to the analysis in [9]. By adjusting the
the passbands to improve the selectivity. To validate the design lengths of la and lb, dual-band operation has been accomplished with
concept, a dual-band SIW BPF operating at 7.89 and 8.89 GHz is
two transmission poles at each band and four TZs below or above
designed, simulated and measured. The measured results are in good
agreement with the simulations. the passband
⎡ ⎤
0 MS1 MS2 0 0 0
Introduction: Substrate integrated waveguide bandpass filters (SIW ⎢ ⎥
⎢ M1S M11 0 M13 0 M1L ⎥
BPFs) attract much attention in recent years due to their low cost, low ⎢ ⎥
⎢ ⎥
insertion loss and high Q factor compared with microstrip technology ⎢M M24 M2L ⎥
⎢ 2S 0 M22 0 ⎥
when the working frequency goes up to millimetre wave band. In M =⎢ ⎢ ⎥ (3)
⎥
order to achieve miniaturisation, SIW BPFs loaded by complementary ⎢ 0 M31 0 M33 0 0 ⎥
⎢ ⎥
split-ring resonators (CSRRs) have been studied. Single-band SIW ⎢ ⎥
⎢ 0 0 M42 0 M44 0 ⎥
BPFs based on CSRRs with narrowband are investigated in [1, 2]. By ⎣ ⎦
changing the orientations of the CSRRs, varied passband characteristics 0 ML1 ML2 0 0 0
are observed. An ultra-wide band SIW filter is illustrated in [3] by
utilising SIW-coupled CSRR pair. With the development of science
and technology, multi-band filters have great theoretical and practical
values. According to this trend, dual-band SIW BPFs are investigated
in [4–8]. A balanced dual-band BPF based on six SIW cavities 2
is reported [4] with too large size. Then, two layers of the substrate s3
are vertically stacked to realise the miniaturisation in [5], but with
the complex manufacturing process. By loading two different types
of the CSRRs on the waveguide surface, two passbands propagating w2 s2
below the waveguide cutoff frequency are generated separately [6].
Two-Side loading scheme for miniaturised dual-band SIW BPF
Designs in [7] are proposed and in [8], half-mode SIW cavities loaded l6
by double-sided CSRRs are presented to achieve more compact size.
However, it may increase the insertion loss and the two-side SIW struc-
ture is not convenient for setting the ground floor. 1
i5 i1
In this Letter, a new method for the design of a dual-band SIW BPF w1 lb
i7
on a single layer is presented. Two CSRRs are etched on the top layer
coupled with TE102 and TE201 modes of the cavity, respectively L
i4
which construct the dual-frequency passbands. A topological structure s4
is also proposed with a clearer explanation of the working principles. i2
The improvement for the selectivity is implemented by generating w3 s5
varied transmission zeros (TZs) in the vicinity of the passband. More S
details would be elaborated in the following. s1
i3 p d
Filter design: The configuration and the schematic topologies of the
proposed differential SIW BPF are presented in Figs. 1 and 2. A rec-
tangular SIW cavity with two additional CSRRs etched on its top Fig. 1 Configuration of the proposed SIW BPF
layer is presented to achieve dual-frequency operation. Coplanar wave-
guide technology has been utilised to connect the microstrip line and the
SIW cavity at the input and output ports. Both TE102 and TE201 modes
can be excited by the proper positions of the input and output ports 3
located on the same side of the cavity. In our design, the length of l1
is set to be larger than l2, which splits the two degenerated modes and M13
makes the resonant frequency of TE201 mode higher than the resonant
frequency of TE102 mode. The resonant frequency of the degenerated
MS1 1 ML1
resonant modes (TE102 and TE201) of the SIW resonator can be calcu-
lated using the following equations:




















L
 2

S

c0 1 2 2
fTE102 = √


+ (1) MS2 2 ML2
2 1g aeff beff























  2
M24
c0 2 2 1
fTE201 = √


+ (2)
2 1g aeff beff 4

where aeff and beff are the effective width and length of the dual-mode
SIW cavity, respectively, εr is the relative dielectric constant, and c0 Fig. 2 Schematic topologies of the proposed SIW BPF

ELECTRONICS LETTERS 25th January 2018 Vol. 54 No. 2 pp. 85–87

 1350911x, 2018, 2, Downloaded from https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2017.3478 by National Institute Of Technology,Arunachal Pradesh, Wiley Online Library on [01/04/2023]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons License
Fig. 6. The proposed filter is compared with other works in Table 1
which could be observed that this design features compact size, low
insertion loss, high selectivity and simple design process.

a b

Fig. 3 Electric field of modes

a TE102 and
b TE201

0.146 Fig. 6 Photograph of the proposed differential SIW BPF

0.144
Table 1: Comparisons with other differential SIW BPFs
Works CF (GHz) IL (dB) Size(λg × λg)
0.142 [4] 9.23/14.05 2.9/2.7 2.7 × 1.27
coupling coefficient

[5] 9.51/14.95 2.77/2.42 0.98 × 0.98

0.140 [6] 4.03/5.77 2.72/1.98 0.215 × 0.189
This work 7.89/8.89 1.5/1.9 0.87 × 0.85
0.138
CF: centre frequency, IL: insertion loss and λg: guided wavelength.

0.136 Conclusion: In this Letter, a novel dual-band SIW BPF with good
transmission performances is presented. Both TE102 and TE201 modes
0.134 in the cavity are excited by the proper feeding lines. Two additional
CSRRs etched on the top layer coupled with the two degenerated
0 0.5 1.0 1.5 2.0 2.5 3.0 modes to achieve the dual-frequency operation. The measurements illus-
la, mm trate a good agreement with the simulations which well validate the
design concept. This proposed method for dual-band operation could
Fig. 4 Coupling coefficient between CSRR1 and TE102 mode be widely applied in low-cost and high-performance dual-band transcei-
ver modules.
0
© The Institution of Engineering and Technology 2018
Submitted: 11 September 2017 E-first: 6 December 2017
–10
doi: 10.1049/el.2017.3478
One or more of the Figures in this Letter are available in colour online.
–20
S-parameters, dB

Hao Zhang, Wei Kang and Wen Wu (Nanjing University of Science and
Technology, Nanjing, 210094, People’s Republic of China)
–30 ✉ E-mail: 78900447@qq.com

–40
–50
simulated results
meausured results
–60
7 8 9 10
frequency, GHz
Fig. 5 Simulated and measured results of the proposed SIW BPF
Experimental results and discussion: In order to validate the design
concept, an SIW BPF loaded by CSRRs with a size of 30.5 mm ×
30 mm has been realised on a 0.508 mm-thick RT/Duroid 5880 substrate
with a dielectric constant of 2.2. The optimised dimensions of the pro-
posed SIW BPF in Fig. 1 are as follows: l1 = 28.7 mm, l2 = 19.8 mm,
l3 = 27 mm, l4 = 5.4 mm, l5 = 7.2 mm, s1 = 20.64 mm, s2 = 6.3 mm,
s3 = 33.6 mm, s4 = 5.44 mm, s5 = 5.5 mm, p1 = 6.8 mm, p2 = 6.56 mm,
p3 = 1 mm, p4 = 1 mm, w1 = 1.56 mm, w2 = 0.4 mm and w3 = 1 mm.
Fig. 5 depicts the comparisons between the simulations and measured
results of the proposed SIW BPF which are carried out by using a
full-wave Ansoft HFSS simulator and an Agilent N5244 network analy-
ser, respectively. The first passband is centred at 7.89 GHz with a 3 dB
bandwidth of 270 MHz. The measured minimum insertion loss within
the passband is 1.5 dB. The second passband is centred at 8.89 GHz
with a 3 dB bandwidth of 350 MHz. The measured minimum insertion
loss within the passband is 1.9 dB. Four TZs are generated at 7.24, 8.2,
8.37 and 9.43 GHz, respectively, to greatly improve the selectivity of
the two passbands. The photograph of the proposed BPF is given in
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