® 1N582x

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

IF(AV) 3A
VRRM 40 V
Tj 150°C
VF (max) 0.475 V

FEATURES AND BENEFITS

n VERY SMALL CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n EXTREMELY FAST SWITCHING
n LOW FORWARD VOLTAGE DROP
n AVALANCHE CAPABILITY SPECIFIED
DO-201AD
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.

ABSOLUTE RATINGS (limiting values)

Value
Symbol Parameter Unit
1N5820 1N5821 1N5822
VRRM Repetitive peak reverse voltage 20 30 40 V
IF(RMS) RMS forward current 10 A
IF(AV) Average forward current TL = 100°C δ = 0.5 3 A
TL = 110°C δ = 0.5 3 3 A
IFSM Surge non repetitive forward tp = 10 ms 80 A
current Sinusoidal
PARM Repetitive peak avalanche tp = 1µs Tj = 25°C 1700 W
power
Tstg Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot 1
* : < thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a )

July 2003 - Ed: 3A 1/5

1N582x

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient Lead length = 10 mm 80 °C/W
Rth (j-l) Junction to lead Lead length = 10 mm 25 °C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit

IR * Reverse leakage Tj = 25°C VR = VRRM 2 2 2 mA
current
Tj = 100°C 20 20 20 mA

VF * Forward voltage drop Tj = 25°C IF = 3 A 0.475 0.5 0.525 V

Tj = 25°C IF = 9.4 A 0.85 0.9 0.95 V

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equations :

P = 0.33 x IF(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821
P = 0.33 x IF(AV) + 0.060 IF2(RMS ) for 1N5822

Fig. 1: Average forward power dissipation versus Fig. 2: Average forward power dissipation versus
average forward current (1N5820/1N5821). average forward current (1N5822).

PF(av)(W) PF(av)(W)
1.8 2.0
δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.1 δ = 0.2 δ = 0.5
1.6 1.8
δ = 0.05
1.6 δ = 0.05
1.4 δ=1
1.4
1.2
1.2 δ=1
1.0
1.0
0.8
0.8
0.6 0.6
T T
0.4 0.4
0.2 0.2
IF(av) (A) δ=tp/T tp
IF(av) (A) δ=tp/T tp
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating
versus pulse duration. versus junction temperature.

PARM(tp) PARM(tp)
PARM(1µs) PARM(25°C)
1 1.2

0.1 0.8

0.6

0.01 0.4

0.2
tp(µs) Tj(°C)
0.001 0
0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150

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 1N582x

Fig. 5-1: Average forward current versus ambient Fig. 5-2: Average forward current versus ambient
temperature (δ=0.5) (1N5820/1N5821). temperature (δ=0.5) (1N5822).

IF(av)(A) IF(av)(A)
3.5 3.5
Rth(j-a)=Rth(j-l)=25°C/W
Rth(j-a)=Rth(j-l)=25°C/W
3.0 3.0

2.5 2.5

2.0 2.0
Rth(j-a)=80°C/W Rth(j-a)=80°C/W

1.5 1.5

1.0 T 1.0 T

0.5 0.5
δ=tp/T tp Tamb(°C) δ=tp/T tp Tamb(°C)
0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

Fig. 6-1: Non repetitive surge peak forward Fig. 6-2: Non repetitive surge peak forward
current versus overload duration (maximum current versus overload duration (maximum
values) (1N5820/1N5821). values) (1N5822).

IM(A) IM(A)
16 12
14 11
10
12 9
8 Ta=25°C
10 Ta=25°C
7
8 Ta=75°C
Ta=75°C 6
6 5
4 Ta=100°C
4 Ta=100°C
IM
3
IM

2 2
t t
δ=0.5 t(s) 1 δ=0.5 t(s)
0 0
1E-3 1E-2 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0

Fig. 7: Relative variation of thermal impedance Fig. 8: Junction capacitance versus reverse
junction to ambient versus pulse duration (epoxy voltage applied (typical values).
printed circuit board, e(Cu)=35mm, recommended
pad layout).

Zth(j-a)/Rth(j-a) C(pF)
1.0 600
F=1MHz
Tj=25°C
1N5820
0.8
1N5821
1N5822
0.6
δ = 0.5 100

0.4
δ = 0.2 T
0.2 δ = 0.1

Single pulse tp(s) δ=tp/T tp VR(V)

0.0 10
1E-1 1E+0 1E+1 1E+2 1E+3 1 2 5 10 20 40

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1N582x

Fig. 9-1: Reverse leakage current versus reverse Fig. 9-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5820/1N5821). voltage applied (typical values) (1N5822).

IR(mA) IR(mA)
1E+2 5E+1
1N5821

Tj=125°C
1N5820 1E+1 Tj=125°C
1E+1

1E+0
1E+0 Tj=100°C Tj=100°C

1E-1 1E-1

Tj=25°C
1E-2 1E-2 Tj=25°C

VR(V) VR(V)
1E-3 1E-3
0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40

Fig. 10-1: Forward voltage drop versus forward Fig. 10-2: Forward voltage drop versus forward
current (typical values) (1N5820/1N5821). current (typical values) (1N5822).

IFM(A) IFM(A)
50.00 50.00

10.00 10.00
Tj=125°C Tj=125°C

Tj=100°C
1.00 1.00 Tj=100°C

Tj=25°C Tj=25°C

0.10 0.10

VFM(V) VFM(V)
0.01 0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fig. 11: Non repetitive surge peak forward current

versus number of cycles.

IFSM(A)
100
F=50Hz Tj initial=25°C

80

60

40

20
Number of cycles
0
1 10 100 1000

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 1N582x
PACKAGE MECHANICAL DATA
DO-201AD plastic

B A B ØC

note 1 E E note 1

ØD ØD

note 2

DIMENSIONS
REF. Millimeters Inches NOTES
Min. Max. Min. Max.
A 9.50 0.374 1 - The lead diameter ♠ D is not controlled over zone E
B 25.40 1.000
♠C 5.30 0.209 2 - The minimum axial length within which the device may be
♠D 1.30 0.051 placed with its leads bent at right angles is 0.59"(15 mm)
E 1.25 0.049

Ordering type Marking Package Weight Base qty Delivery mode

1N582x Part number DO-201AD 1.12g 600 Ammopack
cathode ring
1N582xRL Part number DO-201AD 1.12g 1900 Tape & reel
cathode ring
n EPOXY MEETS UL94,V0

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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