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Coordination Chemistry Reviews 500 (2024) 215489

Contents lists available at ScienceDirect

Coordination Chemistry Reviews


journal homepage: www.elsevier.com/locate/ccr

Review

The progress of g-C3N4 in photocatalytic H2 evolution: From fabrication


to modification
Dandan Ma 1, Zhuoming Zhang 1, Yajun Zou, Jiantao Chen, Jian-Wen Shi *
State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi’an Jiaotong
University, Xi’an 710049, China

A B S T R A C T

Polymeric semiconductor, Graphitic Carbon Nitride (g-C3N4), has emerged as one of the desired materials in photocatalytic hydrogen evolution (PHE) due to its
visible-light activity, facile accessibility, low-cost, chemical stability, as well as the unique layered structure. However, pure g-C3N4 photocatalyst suffers from limited
photocatalytic performance due to the low efficiency of charge carrier separation and serious charge recombination. Researches over the past few decades have
shown that the photocatalytic active of g-C3N4 can be easily affected by many factors including spatial morphology, electronic structure, as well as the interaction
between g-C3N4 and other materials. This review gives a comprehensive introduction over the basic properties and the development of g-C3N4 in PHE. A brief history
and the basic properties are firstly introduced. After then, this review introduces the fabrication and the limits of g-C3N4 in PHE, followed by the rational methods in
improving the photocatalytic active of g-C3N4 including the self-modification strategies (e.g., molecular structure regulation, defect engineering and microstructure
manipulation) and the exogenous modification strategies (e.g., the deposition of co-catalyst and the construction of g-C3N4 based heterostructure). Lastly, this review
discusses the major challenges and opportunities of g-C3N4 in photocatalytic field. It is believed that this review is benefit for proposing more effective solutions in
developing high active g-C3N4 photocatalysts based on a comprehensive understanding of g-C3N4 material.

1. Introduction renewable energy, which not only avoids the negative impact on envi­
ronment caused by the use of fossil fuels, but also provides solution for
Since the industrial revolution, the high consume of fossil fuels and the long-term energy storage of renewable energy [7,8], thus is of great
the immoderate emissions of carbon dioxide are pushing the Earth into significance in integrating the development of multiple energy sources
the abyss of environmental degradation and resource depletion, which and improving the efficiency of energy system utilization.
bring a serious threat to the survival and development of human being Up to now, scientists have reported several approaches to produce
[1–3]. In face of the increasingly severe global climate and energy crisis, hydrogen through the renewable energy strategies [3–5]. From the
exploring and developing renewable green energy is extremely urgent. perspective of energy utilization efficiency and sustainable develop­
As one of the most important secondary energy sources, hydrogen (H2) ment, semiconductor-based photocatalytic hydrogen evolution (PHE)
energy is a promising alternative of the traditional fossil energy, and has from water splitting can directly convert solar energy into hydrogen
attracted strong researches in addressing the global energy and envi­ energy, which minimizes the energy loss in the energy transfer pro­
ronmental issues due to the irreplaceable merits, such as clean (zero cedure and thus has great potential in the production of “green
carbon emission from the combustion process), high energy density hydrogen” [5–7]. However, despite the mass of efforts, it is a pity that
(calorific value: 120–142 MJ/kg), diverse sources (water splitting) the most of the current reported photocatalytic systems are unable to
[4–6], and so on. meet the needs of practical hydrogen production, mainly due to the
Despite the charming merits of hydrogen energy itself, the reason­ limited photocatalytic activity and the poor photo stability of photo­
able production of hydrogen with the minimize carbon emission is still a catalysts[9–11]. The exploration and design of photocatalysts with high
key factor in constructing an eco-friendly renewable energy system. As activity and stability are still the key step to realize industrial PHE.
shown in Fig. 1, among different hydrogen-production strategy, the In recent years, graphitic carbon nitride (g-C3N4) has become an
“green hydrogen” is most expected. The named “green hydrogen” is to attractive research hotspot in the exploration of high performance
produce hydrogen with “zero carbon emission” through the use of photocatalysts [10–14], more than 6900 research articles focused on the

* Corresponding author.
E-mail address: jianwen.shi@mail.xjtu.edu.cn (J.-W. Shi).
1
These authors contributed equally to this work.

https://doi.org/10.1016/j.ccr.2023.215489
Received 31 March 2023; Accepted 11 October 2023
Available online 2 November 2023
0010-8545/© 2023 Elsevier B.V. All rights reserved.
D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

g-C3N4 based PHE region have been published in the past ten years region between CB and VB is named forbidden band [12,13]. When a
(Fig. 2). The continuous climbed number of research papers over the semiconductor is irradiated under simulated sunlight and excited by the
past 10 years indicates an increasing research interest in g-C3N4 based photons whose energy is greater than or equal to its band-gap width (Eg)
PHE, and the slight declined data in 2022 possibly due to the hampered energy, the electrons will jump from the VB to the CB, leaving corre­
research caused by the global COVID-19 pandemic. Although scientists sponding holes in VB to form the electron (e− ) - hole (h+) pairs. The
have placed high expectations on the photocatalytic performance of g- photogenerated electron-hole pairs subsequently separate and migrate
C3N4, the photocatalytic activity and stability of traditional g-C3N4 are to the surface-active sites of catalyst, where the electron acceptor is
still far away from the demands of practical application, which is mainly reduced by the photogenerated electrons and the electron donor is
because of the intrinsic serious charge recombination and low efficient oxidized by the photogenerated holes. It should be mentioned that,
surface reaction rate in g-C3N4 [11–13], greatly hindering the applica­ during the migration of photogenerated charge carriers, the electron-
tion of g-C3N4 in photocatalysis. In order to improve the photocatalytic hole in close proximity will recombine due to electrostatic interaction
performance of g-C3N4 as much as possible to make it competitive in in the bulk phase or surface of the material and release energy in the
photocatalytic reaction, various methods, including ontology doping, form of light or heat, which is harmful to the photocatalysis due to the
surface modification, structure design, the construction of hetero­ reduced utilization of photogenerated carriers [11,15].
structures, and so on, have been adopt. As shown in Fig. 3, the mechanism of photocatalysis can be short­
Thus, this review tries to provide a comprehensive description and ened to three steps: 1) The formation of photogenerated electron-hole
details analysis about the accomplishments of g-C3N4 in PHE and put pairs. Semiconductors absorb the proper incoming sunlight and are
forward possible strategies in driving the shortcomings in the current excited to produce photogenerated electrons and holes. This procedure
study. First of all, we introduce the basic principle of semiconductor occurs on a relative fast time scale in femtosecond (fs) range; 2) The
based photocatalysis. Secondly, the development history and basic transfer of electron-hole pairs. The photogenerated electrons and holes
properties of g-C3N4 are described. Thirdly, the preparation and appli­ transfer to the surface of semiconductor, in which the charge transfer
cation status of g-C3N4 in PHE are discussed. Fourthly, the current and recombination occur at the same time. The separation and transfer
developed strategies in improving the photocatalytic performance of g- of charge carriers happen in picosecond (ps) to microseconds (μs) scale
C3N4 are summarized. Finally, the current challenges and future de­ while the charge recombination happens in ps to millisecond (ms); 3)
velopments of g-C3N4-based photocatalysts are discussed. Surface REDOX reaction. Reactants adsorb on the surface of semi­
conductors and respectively react with electrons and holes, and the
2. The basic principle of PHE photocatalytic reactions occur in μs to ms range [16,17]. Based on the
basic time scale difference of the charge carriers from generation to
Researchers would realize the substantial improvement of its cata­ surface reaction, it can be concluded that the PHE efficiency depends on
lytic performance in essence only on the basis of in-depth understanding the competitive procedure of charge transfer and charge recombination.
of the catalytic mechanism of semiconductor based photocatalysis. Since Considering that the charge transfer happens in a faster time scale than
Fujishima and Honda reported the PHE experiment in 1973 [14], sci­ that of charge recombination, the key in improving PHE is to facilitate
entists have put a lot of efforts to reveal the basic principle of PHE. A the rapid separation and transfer of charge carriers and avoid their bulk/
semiconductor-based photocatalysis refers to the process of accelerating surface recombination [15–17]. It is to say, the photocatalytic perfor­
the surface REDOX reaction through a light-irradiated semiconductor, mance can be improved through decreasing the bulk size or increasing
where the photogenerated electrons ( e− ) and holes (h+), named charge the specific surface area of semiconductor, speeding up the separation of
carriers, play crucial roles in participating the REDOX reaction [15]. charge carriers, as well as accelerating surface reaction.
According to the solid energy band theory, the band structure in semi­
conductors is discontinuous, that is, there are high-energy bands (Con­ 3. g-C3N4 photocatalyst
duction Band, CB) that are not filled by electrons and low-energy bands
(Valence Band, VB) that are filled by electrons, and the energy level As a new type of non-metallic organic semiconductor photocatalyst,

Fig. 1. (a) Schematic diagram of hydrogen production technology route, (b) Schematic diagram of the renewable energy based H2 evolution procedure.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 2. Annual publications details based on g-C3N4 photocatalyst utilized in PHE reaction from 2009 to 2022 (Adapted from ISI Web of Science, dated 28th
March 2023).

Fig. 3. The difference of photocatalysis in time scale and spacial scale. Adapted with permission from ref. [17]. Copyright 2020 Royal Society of Chemistry.

Graphitic Carbon Nitride (g-C3N4) has attracted increasing researches in 3.1. The brief research history of g-C3N4
the past decades due to the unique electronic structure, visible light
response and excellent chemical stability. The design and modification Graphitic carbon nitride (g-C3N4) is a tri-s-triazine repeating unit
of g-C3N4-based photocatalytic system is a research hotspot in the con­ stacked organic semiconductor with a graphitic p-conjugated structure.
struction of highly efficient photocatalyst [19–22]. As an eldest polymer with general formula of (C3N3H)n, it has received
extensively researches over the last hundred years [22,23]. The earliest
research on C-N compounds can be traced back to 1834, when Berzelius

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

synthesized a carbon and nitrogen compound composed of heptazine selection of reaction precursor and the control of calcination tempera­
structural units in laboratory, which was named “Melon” by Lepzig [24]. ture. In addition, the C/N structure of g-C3N4 conjugate endows the
In 1922, Franklin obtained an amorphous carbon–nitrogen compound semiconductor with fluorescence characteristics with the emission peak
by pyrolysis of mercuric thiocyanate and put forward the concept of at around 470 nm, and the fluorescence lifetime is in the range of 1–5 ns.
“carbonitride” for the first time [25]. Due to the fact that g-C3N4 is Similar to that of light absorption ability, the fluorescence characteris­
chemical inertness and insolubility in most solvents, it is difficult to tics also changes with the prepare strategy and the layer of g-C3N4
determine the crystal structure of carbon nitride, and research on this nanosheet (NS). The fluorescence quantum yield of g-C3N4 prepared by
material has been at a standstill. In 1937, based on the X-ray crystal­ traditional thermal condensation polymerization method is less than 5
lography study, Pauling and Sturdivant declared that a coplanar tri-s- %, and it needs to be stripped to form ultra-thin nanosheets (NSs) to
triazine unit was the basic elementary structural unit of all polymeric have applicable fluorescence properties [31,32].
g-C3N4 derivatives [26]. In 1982, the coplanar arrangement reported by In terms of microstructure, g-C3N4 has a graphite-like layer structure,
Pauling and Sturdivant was confirmed by Leonard and co-workers after the aromatic heterocyclic structure inside the layers and the van der
they successfully prepared the single crystal structure of cyameluric Waals force between the layers endow g-C3N4 with good chemical and
derivatives (C6N7H3) through a bottom-up assembly strategy [27]. thermal stability. In general, under the protection of inert gas, g-C3N4
When time came to 1989, Cohen et al. simulated the structure of β-C3N4 can be broken down only when the material is heated up to more than
through calculation and predicted that the material had a hardness 450 ℃, while it can still remain stable when it is heated to as high as 600
comparable to diamond, which once again stimulated researchers’ ℃ in the air [33–36]. What’s more, the graphite-like layer structure
enthusiasm for the study of carbon nitride [28]. In 1996, Teter et al. endows the g-C3N4 with extremely large specific surface area, which is
proposed that carbon nitride has five different crystal structures: α calculated to be as high as 2500 m2/g for ideal monolayer g-C3N4 sample
phase, β phase, quasi-cubic phase (P phase), cubic phase (C phase) and [37].
graphite phase (G phase) (Fig. 4) based on theoretical calculation [29]. g-C3N4 is a widely studied C-N polymer characterized by the typical
Among them, g-C3N4 has the highest stability at normal temperature and two-dimension graphite-like topological structure. The ground state
pressure, and has semiconductor properties. In 2006, Goettmann et al. structure of g-C3N4 is mostly studied by using X-ray diffraction method.
applied g-C3N4 for the first time in the photocatalytic decomposition of As shown in Fig. 5b, the two typical XRD peaks located at 2θ = 13.0◦ and
aquatic hydrogen driven by visible light [30]. Immediately, in 2009, 27.4◦ respectively arise from the in-plane repeated unit with a distance
Wang at al. found that g-C3N4 displayed encouraging active under of about 6.81 Å and the graphitic interlayer with a distance of 3.26 Å
visible light irradiation for the first time [31], which marks a great [31]. However, limited by the experimental conditions and character­
milestone in the research of metal-free organic photocatalysts. ization techniques, the relative position of C and N atoms in the
Compared with traditional inorganic semiconductor photocatalysts, graphite-like structure can be only predicted through theoretical
organic semiconductor photocatalyst g-C3N4 has many advantages, such calculation and exact stacking positions of C and N atoms are still not
as good chemical stability, adjustable electronic structure, n-type clear now.
semiconductor features, earth-abundant and so on [16–19]. All of these It is generally believed that there are two types of basic structural
merits have extremely boomed the flourishing study on the g-C3N4- units of g-C3N4: the R3m spatial group crystal structure formed by the
based photocatalysts. Triazine ring (C3N3, triazine) and the P6m2 spatial group crystal struc­
ture formed by the Heptazine ring (C6N7, Tri-S-Triazine or Heptazine)
[38–40]. As shown in Fig. 6, R3m and P6m2 structure g-C3N4 display
3.2. The structure and physicochemical properties of g-C3N4
different energy states due to the difference in the size of the nitrogen
holes and the chemical environment of the nitrogen atoms in the allo­
As shown in Fig. 5a, the pure g-C3N4 is pale yellow solid power with
trope. Based on density functional theory (DFT) calculation, Kroke et al.
the light absorption band edge at 475 nm, and the absorption band edge
[32] found that the binding energy of the Heptazine unit is lower than
can be slightly affected by different preparation conditions, such as the

Fig. 4. Five different crystal phases carbon nitride. Adapted with permission from ref [29]. Copyright by 2016 Acta Physico-Chimica Sinica.

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Fig. 5. (a) Optical absorption properties and optical photographs of g-C3N4, (b) Crystal structure of g-C3N4 obtained from XRD measurement. Adapted with
permission from ref [31]. Copyright 2009 Macmillan Publishers Limited.

Fig. 6. Two basic structural units of g-C3N4.

that of the Triazine unit, so the structure of the Heptazine unit is more total, g-C3N4 is mainly prepared through the “bottom-up” method by the
stable. Therefore, it is generally believed that g-C3N4 is composed of polymerization of N-rich precursors (such as urea, cyanamide, dicyan­
Heptazine structural units. diamide, melamine, thiourea, and so on) and the “top-down” method by
As an organic semiconductor photocatalyst, the studies on the elec­ peeling from bulk material through the chemical or physical methods.
tron structure and energy band distribution of g-C3N4 are also attractive. The main pathway of “bottom-up” synthesis methods includes thermal
As shown in Fig. 7, in the common studied two-dimensional g-C3N4, C condensation polymerization, solvothermal method, solid phase reac­
and N atoms are distributed in one plane and form hexagonal structure tion method, vapor deposition method, electrochemical deposition
through σ bond, while the lone pair electrons in the Pz orbitals of the C method, and so on, while exfoliation method is the mostly used “top-
and N atoms form a highly delocalized π-conjugated framework due to down” strategy. Table 1 lists the advantages and disadvantages of each
the sp2 -hybridization [40,41]. Among them, the formation of π-conju­ method, followed by a detailed introduction to commonly used
gated framework is believed to be the origin of photocatalytic reactivity methods.
of g-C3N4 [39–42].
Based on theoretical studies, the lone pair electrons of N atom are 4.1. Thermal condensation polymerization method
mainly responsible for the formation of Highest Occupied Molecular
Orbital (HOMO) while the lone pair electrons of C atom constitute the Urea, cyanamide and dicyandiamide are the mostly used precursors
Lowest Unoccupied Molecular Orbital (LUMO), which corresponds to in the direct pyrolysis method. The g-C3N4 can be easily prepared
the VB and CB in the semiconductor, respectively. The bandgap de­ through the polycondensation during a simple heating and heat pres­
creases from 3.5 eV to 2.1 eV with the stack of g-C3N4 NSs from several ervation procedure. The heating temperature affects the structure and
layers to one layer. The exact band gap of g-C3N4 can be evaluated from photocatalytic performance of g-C3N4 directly [50–54]. Yan et al. [50]
the ultraviolet–visible spectrum with a semiconductor-like absorption obtained g-C3N4 with good crystallization by directly calcination of
characteristic (about 2.7 eV), which is sufficiently large to overcome the melamine at 500–580 ◦ C, it was found that the ration of C/N in g-C3N4
endothermic character of the water-splitting reaction (Fig. 8) can be adjusted through the control of heating temperature, which
[31,44–49]. induced a continuous changed value of forbidden band energy. Zhang
et al. [51] fabricated g-C3N4 by directly heating thiourea in air and
4. Preparation of g-C3N4 investigated the effect of reaction temperature on the structure of g-C3N4
product. An improved degree of polycondensation and polymerization
Many researchers are committed to the preparation of g-C3N4. In of g-C3N4 was detected when the calcination temperature gradually

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 7. Predicted images of heptazine-based g-C3N4, (a) predicted most stable configuration, phase 1, (b) second stable distorted configuration, phase 2, (c) most
stable planar configuration, phase 3. The atoms in the middle layer of the lattices are labeled with yellow crosses. Adapted with permission from ref [43]. Copyright
2017 American Chemical Society.

increased from 450 to 600 ◦ C, indicating an enhanced delocalization of exhibited a belt- and ribbon-like morphology and comprised aggregated
electrons in aromatic sheets, which can be ascribed to the fact that the bundles or cables with numerous voids and higher surface-to-volume
improved reaction temperature benefits to the formation of stronger van ratio than those of pristine g-C3N4.
der Waals interaction forces between the tri-s-triazine cores and thus There is no doubt that the thermal condensation polymerization
facilitating the tri-s-triazine packing units, which further promotes the method has many attractive advantages such as facile to fabrication, cost
photocatalytic redox ability of the sample [52]. effective, and high production yield, which are benefit to large-scale
The effect of heating time on the formation of g-C3N4 has also been industrial production. Deficiently, it has been found that the photo­
widely studied [55–59]. For example, Dong et al. [55] heated urea at catalytic property of the g-C3N4 fabricated via direct pyrolysis of N-rich
550 ◦ C with an increasing reaction time from 0 to 240 min, and they precursors is weak, this is because that a various of intermediates formed
found that the specific surface area of g-C3N4 gradually increased from at the high reaction temperature, and the formed intermediates are
31 to 288 m2/g, while the layer thickness decreased from 36 to 16 nm. difficult to be completely dislodged due to the incomplete poly­
The thermal condensation polymerization method of g-C3N4 has condensation, which results in a disordered g-C3N4 structure and the fast
been concerned by scientists. In 2009, Wang et al. [31] reported the recombination of the photogenerated electron-hole pairs [63].
thermal condensation polymerization method of g-C3N4 prepared by
using mono-cyanamide as a precursor. As shown in Fig. 9, the mono- 4.2. Solvothermal method
cyanamide was firstly condensed into dicyandiamide when the mono-
cyanamide precursor was heated to 150 ◦ C, which further poly­ In solvothermal method, C and N precursors are added into a high-
condensated to melamine when the heating temperature was further pressure steel reactor containing high boiling point organic solvent as
increased to 240 ◦ C. At a temperature of 390 ◦ C, cyanamide thermally the heat conduction medium, and then heated up to a certain temper­
polymerized to form heptazine structural unit (also known as mel­ ature. Thus, g-C3N4 can be obtained in the high-temperature and high-
amine). As the temperature rising to more than 520 ◦ C, g-C3N4 with high pressure environment [64–66]. Montigaud et al. [65] synthesized g-
polymerization degree was gradually formed. C3N4 micro particles through solvothermal method by using tri­
Besides, some assistant strategies such as template method and acid chlorohydric acid and melamine as precursors and triethylamine as
treatment method are also combined with the traditional thermal solvent at 250 ℃ reaction condition. Using melamine and melamine
condensation polymerization method to fabricate the g-C3N4 with spe­ chloride as precursors and acetonitrile as solvent, Cui et al. [66] pre­
cial structure and morphology [60–63]. Zhong et al. [60] fabricated g- pared g-C3N4 nanorods with uniform shape at 140–180 ℃ for 24–96 h.
C3N4 by using the HNO–3 protonated melamine as precursor to create By contrast, the g-C3N4 prepared by solvothermal method usually suffers
extra porous structure. Due to the decomposition of protonated mel­ worse crystallinity than that prepared by thermal condensation poly­
amine, the as-prepared g-C3N4 displayed a highly porous structure, merization. However, the advantages of mild conditions, simple oper­
which contributes to a lower recombination rate of charge carriers. ation and uniform and controllable product morphology also make the
Zhang et al. [61] fabricated acidified g-C3N4 via a one-step process by solvothermal method popular and important in preparing g-C3N4 with
pretreating HCl and alcohol with melamine. The obtained g-C3N4 special morphology and special structures.

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Fig. 8. The electronic structure diagram of g-C3N4 calculated by DFT. Adapted with permission from ref [31]. Copyright 2009 Macmillan Publishers Limited.

harsh reaction conditions, the reaction course is complex and the


Table 1
product generally contains graphite carbon impurities, this method is
Comparison of the advantages and disadvantages between different methods in
regarded to have weak practicability in preparing g-C3N4.
the fabrication of g-C3N4.
Synthesis method Advantages Disadvantages
4.4. Vapor deposition method
Thermal condensation High yield, and high Time consuming
polymerization crystallinity, produced g-
Generally, C-based and N-based organic compounds are utilized as
method C3N4 with tunable
structure raw reaction materials in vapor deposition. Under heating or other
Solvothermal method Easy to operate, eco- Low yield and long conditions, the organic precursors are decomposed into small molecules
friendly and low cost synthesis cycle and then polymerizes to generate g-C3N4 [70–73]. Xiao et al. [70] adopt
Solid-phase reaction High crystallinity and high Time- and cost-consuming
vapor deposition method using melamine as raw material to obtain flat
method yield and complicated
preparation process
g-C3N4 film on glass substrate. The obtained g-C3N4 film is about 250 nm
Vapor deposition Good yield, high purity High cost, complicated in thickness and can be independently self-supporting after peeling. g-
method steps, limited crystallinity C3N4 obtained by vapor deposition has a smooth and uniform structure,
Electrochemical Good yield, simple steps, Low purity which makes this method attractive in the fabrication of g-C3N4 films,
deposition method controllable thickness
and it is also an important tool to in-situ growth g-C3N4 on other semi­
Exfoliation method High crystallinity, high Environmentally
purity and thinner layer unfriendly, low yield conductor substrates. By using vapor deposition method, Gao et al. [71]
deposited g-C3N4 on TiO2 nanoarray substrate to form closely contacted
heterostructure.
4.3. Solid-phase reaction method
4.5. Electrochemical deposition method
In the solid-state reaction method, g-C3N4 is obtained by mixing C
precursor and N precursor uniformly and then treating with high tem­
Electrochemical deposition is a method of growing g-C3N4 on elec­
perature and pressure without the addition of organic solvent [67–69].
trode substrate with C and N-based organic solution as raw materials
Sekine et al. [67] obtained sheet-like g-C3N4 by treating C6N4 and
under the addition of extra potential. By using the electrochemical
triazine precursors at 1400 ◦ C and 5 GPa for 30 min. Similarly, by using
deposition method at the applied potential of 5 V, Lu et al. [74] prepared
melamine and hydraine as reactants and calcinating at 800 ◦ C and 3 GPa
g-C3N4 NSs with thickness of 2 nm by using melamine and sodium hy­
environment, Alves et al. [68] obtained g-C3N4 with good crystalliza­
droxide aqueous solution as electrolyte. Zhao et al. [75] reported the
tion. Considering that the solid phase reaction method usually requires
fabrication of layer g-C3N4 by using dicyandiamide as a precursor, and

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Fig. 9. Schematic diagram of the thermal condensation process of g-C3N4 prepared with mono-cyanamide as precursor. Adapted with permission from ref [19].
Copyright 2016 American Chemical Society.

the g-C3N4 grown on the electrode within 10 s by microwave-assisted 4.6. Exfoliation method
electrochemical deposition. The electrochemical deposition method
has been widely used in the preparation of g-C3N4 thin films due to its Inspired by the exfoliation of graphene, many kinds of exfoliation
simple operation, high generation speed and low reaction temperature. strategies, such as ultrasonication assisted liquid exfoliation method,

Fig. 10. Morphology of g-C3N4 prepared by using (a) Thermal condensation polymerization method. Adapted with permission from ref [51]. Copyright 2012
Elsevier. Adapted with permission from ref [52]. Copyright 2018 Springer. Adapted with permission from ref [63]. Copyright 2018 Korean Society of Industrial
Engineering Chemistry. (b) Solvothermal method. Adapted with permission from ref [64]. Copyright 2019 Institution of Engineering and Technology. Adapted with
permission from ref [66]. Copyright 2016 Wiley. (c) Solid-phase reaction method. Adapted with permission from ref [69]. 2019 Institution of Engineering and
Technology. (d) Vapor deposition method. Adapted with permission from ref [70]. Copyright 2018 Wiley. Adapted with permission from ref [71]. Copyright 2016
Wiley. Adapted with permission from ref [72]. Copyright 2020 Elsevier. Adapted with permission from ref [72]. Copyright 2020 Elsevier. (e) Electrochemical
deposition method. Adapted with permission from ref [74]. Copyright 2015 Royal Society of Chemistry. Adapted with permission from ref [75]. Copyright 2019
Wiley. (f) Exfoliation method. Adapted with permission from ref [78]. Copyright 2022 Springer.

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thermal exfoliation method, chemical exfoliation method, and so on, In addition, some other factors, such as the thermal effect generated
have been used for the fabrication of g-C3N4 from the bulk material under light irradiation [80], has also been noticed in some literatures.
[76–78]. Liu et al. [76] reported the facile fabrication of few-layered The effects of all these factors on the photocatalytic process are complex
porous g-C3N4 nanoplates by using a novel combination of thermal and need to be further studied. In order to give out an objective and
etching and gas-driven exfoliation of bulk g-C3N4, and the obtained few- accurate evaluation to the real PHE performance of g-C3N4, the photo­
layered porous g-C3N4 nanoplates displayed modified electronic struc­ catalytic measurements are usually carried out under a stable environ­
tures, large specific surface area, as well as greatly enhanced photo­ ment, such as keeping the same sacrificial agents, the same light power,
catalytic activities. Rono et al. [77] compared the photocatalytic the same addition amount of catalyst, and so on.
performance of the g-C3N4 NSs obtained by thermal etching and liquid From the basic principle of PHE, the photocatalytic performance of g-
exfoliation of bulk g-C3N4. The g-C3N4 NSs prepared by thermal exfoli­ C3N4 can be improved from the following perspectives: (i) improving the
ation method displayed a smaller specific surface area, but it presented generation of photogenerated charge carriers by expanding the light
much higher photocatalytic activity than that synthesized by liquid absorption range of photocatalysts, (ii) accelerating the charge migra­
exfoliation. The reason can be ascribed to the porous structure formed tion and separation and suppressing the harmful charge recombination
during the thermal treatment procedure. Zheng et al. [78] fabricated g- rate, (iii) increasing the exposure of active sites and decreasing the re­
C3N4 by using a gas exfoliation method and studied the exfoliation action energy barrier to facilitate the utilization of charge carriers, (iv)
mechanisms by combing experiments and theoretical calculation, it was improving the photo-stability of the photocatalysts through inhibiting
revealed that the liquid nitrogen molecules entered the edge space in g- the photo-corrosion [82–85]. Up to now, many strategies, including
C3N4 layers and subsequently pushed deeper, finally resulted in the defect engineering, surface modification, size and morphology control,
exfoliation of NSs. co-catalyst deposition and the construction of heterostructures, have
Fig. 10 displays some typical morphology of g-C3N4 fabricated by been proposed to alleviate the influence of the adverse factors and
different methods. It can be observed that the traditional thermal improve the photocatalytic performance of g-C3N4, which will be dis­
condensation polymerization method and solvothermal method are cussed more detailed in the following sections.
more likely to endow g-C3N4 with loose 2D morphology or bulk feature.
In the deposition strategies, the morphology of g-C3N4 depended on the 6. Self-modification of g-C3N4
substrates and the thickness of g-C3N4 can be controlled by the deposi­
tion procedure. In addition, the single layer and low layer numbers of g- The hot research of PHE technology has stimulated diverse strategies
C3N4 can be obtained from the exfoliation method. Based on the in the modification of g-C3N4. In this review, the modification strategies
different characterizations of these several methods, researchers can are mainly classified into two major categories: self-modification and
control the morphology and structure of g-C3N4 by choosing proper exogenous modification. It is to say, one approach is to change the
fabrication strategy. inherent properties of g-C3N4 to accelerate the PHE process and the
other strategy is to introduce an assisted material to speeding up the
5. Limits of g-C3N4 in PHE generation of hydrogen without changing the properties of g-C3N4 itself.
The evaluation indexes of g-C3N4 semiconductor photocatalysts mainly
In recent years, researchers have made a series of substantial prog­ include the morphology, crystal phase, crystallinity, shape, size, spatial
ress in the application of g-C3N4 in PHE, but the efficiency of PHE is still structure, surface structure and defects, which are strongly related to its
far away from the practical application requirements. Although g-C3N4 photocatalytic performance. Therefore, all of these mentioned factors
has good thermal and chemical stability, it also has some problems as a can be considered self-modification.
photocatalyst: (1) The serious charge recombination in large size bulk g- Among different self-modification methods, molecular structure
C3N4 results in a low utilization efficiency of photogenerated carriers; regulation, defects engineering and micro morphology design are the
(2) The exposure of reaction active site and the mass transfer process are most widely adopt. Molecular structure design and adjustment can
easily limited by the specific surface area; (3) Limited visible light ab­ regulate the electronic band structure of g-C3N4 and thus change the
sorption leads to insufficient visible light response; (4) Inadequate generation, separation and utilization of charge carriers. In addition,
expansion of π-conjugate system results in poor electrical conductivity, defects usually arise from the breakage and disruption of the perfect
high exciton binding energy and low quantum efficiency. All of the basic units, which change the chemical sluggishness of intrinsic graphite
above-mentioned shortcomings make the pure g-C3N4 an unsatisfied p-conjugated structure and are expected to decrease the recombination
photocatalytic performance and limit its practical application. There­ of charge carriers. At the same time, micro morphology design, is
fore, the modification of g-C3N4 is necessary to drive the development of commonly used in changing the specific surface area and the exposure of
g-C3N4 in PHE [78–81]. the active site, as well as changing the charge transfer distance during
Additionally, as a typical REDOX reaction, the PHE activity of g-C3N4 the photocatalytic process. All of these strategies are efficient in
is also directly affected by the environmental factors, such as pH, tem­ improving the PHE ability of pristine g-C3N4.
perature, as well as the addition amount of catalyst. Among, pH value of
reaction solution is the most concerned factor in affecting the photo­ 6.1. Molecular structure regulation
catalytic activity because the functional groups on the surface of g-C3N4
are easily affected by the environmental pH value and thus changing the As mentioned above, the graphene like π-π conjugate structure of g-
density and delocalization of electrons [79–81]. Wu et al. [79] discussed C3N4 is considered to be the origin of the photocatalytic activity [12,86].
the effect of pH and methanol on the PHE performance of g-C3N4, and Based on this fact, it is believed that the photocatalytic performance of g-
they found that the alkaline environment and the addition of methanol C3N4 can be adjusted through interfering the charge transfer in the
would accelerate the transfer of photogenerated holes into solution and π-conjugate system [87–94]. By adjusting the chemical composition and
thus benefit to the PHE reaction of g-C3N4. Otherwise, the addition local structure of g-C3N4 at molecular level, the electronic band struc­
mount of photocatalysts is another worth noticed factor discussing the ture of g-C3N4 can be effectively regulated, so as to the light absorption
PHE activity of the photocatalysts. It has been found that the H2 evo­ capacity, photocurrent characteristics and the charge separation effi­
lution rate exhibited liner increase with the increased amount of pho­ ciency, and thus improving the photocatalytic activity of g-C3N4
tocatalyst in a narrow mass range, while the over addition of essentially.
photocatalyst resulted in a very slow increase or even decline in pho­
tocatalytic activity, this is because the absorption of irradiation light was 6.1.1. Molecular doping
shield when too much solid catalyst was added in the solution [77,78]. From the point of adjusting the π-π conjugate, the most commonly

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

adopt strategy is molecular doping, that is, the co-polymerization of g- Zhou et al. [96] constructed the carbon ring and stereo molecular
C3N4. Through introducing other structure-matching small molecules scaffold co-doped g-C3N4 NSs (AGCN). It was found that the introduc­
during the copolymerization process, the target monomers with tion of carbon ring changed the in-plane connection of g-C3N4 through
different chemical compositions can be embedded into the conjugated the sp2-hybridized C-N bonds, which extended the delocalization of π
structure of g-C3N4 through chemical bonding, so as to regulate the electrons and facilitated the exfoliation of bulk g-C3N4 (Fig. 12a). The
electronic band structure, improve the light absorption capacity and synergistic effect of the above two aspects resulted in 12.9 times of H2
promote the separation of photogenerated carriers [88,91,94]. evolution ability (Fig. 12b).
The earliest copolymerization of g-C3N4 was reported by Zhang et al. Jiao et al. [97] fabricated the nitrobenzene inarched g-C3N4 nano­
[95] through the Schiff-based reaction between barbituric acid and tube photocatalyst (CN-DNP) by using a copolymerization method. The
dicyandiamide. As shown in Fig. 11a, the added barbituric acid can be aromatic ring in nitrobenzene grafted into the triazine ring of g-C3N4
directly incorporated into the classical structure of g-C3N4 during the (Fig. 13a), thus enhancing the conjugation of g-C3N4 and promoting
high temperature treatment, and the obtained samples displayed electron delocalization. The introduction of nitro group enabled pho­
remarkable redshift of optical absorption from 470 to 750 nm when the togenerated electrons to transfer from the center to the both ends of g-
addition amount of barbituric acid gradually increased (Fig. 11b). The C3N4 nanotube and facilitated the separation of photogenerated elec­
red-shift of light absorption edge mainly comes from the decreased band trons and holes. At the same time, the introduction of nitrobenzene
gap caused by the introduction of barbituric acid (Fig. 11c), which can narrowed the bandgap of CN from 2.7 eV to 2.5 eV (Fig. 13b) and
be ascribed to the efficiently expanded π-π conjugate due to the co- resulted in 11.2 folds higher H2 evolution ability than CN (Fig. 13c). This
polymerization of g-C3N4, and thus resulting in an obviously increased work clarified the possibility of introducing extra group on the edge of g-
hydrogen evolution activity, 5 times higher than that of original g-C3N4. C3N4 through the molecular doping to promote the separation of charge

Fig. 11. (a) Proposed copolymerization processes of dicyandiamide with barbituric acid at high temperature, (b) UV/Vis diffuse-reflectance spectra of g-C3N4 and
barbituric acid copolymized g-C3N4 samples, (c) Mott-Schottky plots and band structure of g-C3N4 and barbituric acid copolymized g-C3N4 samples. Adapted with
permission from ref [95]. Copyright 2010 Wiley-VCH.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 12. (a)Schematic illustration of the charge transfers and separation on the AGCN skeleton under visible light. (b) the visible light PHE rate (λ > 420 nm) of the
samples. Adapted with permission from ref [96]. Copyright 2021 Elsevier.

Fig. 13. (a) the possible polymerization schematic illustration of CN-DNP formation, (b) band structure of the CN and CN-DNP0.1 samples, (c) photocatalytic
hydrogen activity of photocatalysts in visible light (λ>420 nm), (d) proposed photocatalytic mechanism for hydrogen production over CN-DNP under visible light
irradiation. Adapted with permission from ref [97]. Copyright 2022 Elsevier.

carriers on spatial to accelerate the utilization of electrons and the doping usually results in lattice defects, which changes the electronic
generation of H2 (Fig. 13d). band structure of g-C3N4, thus adjusting the light absorption perfor­
Based on the co-polymerization strategy, some other precursors, mance, separation and utilization efficiency of charge carriers, and ul­
including pyridine, thiophene, benzene ring, diaminomaleonitrile, etc., timately improving the photocatalytic activity of g-C3N4. The commonly
have also been utilized as molecular modification monomer by re­ studied ion-doped g-C3N4 photocatalysts and their corresponding PHE
searchers. In these systems, the intrinsic framework of g-C3N4 is broken performance in recent years are summarized in Table 2.
by the new anchored group, thus changing the delocalization of the π According to the nature property of impurity ions, ion doping
electrons and optimizing the π-conjugated systems, and the obtained including metal ion doping and non-metal ion doping. In ion doping, the
molecular-modified samples display much improved H2 evolution abil­ introduced metal ions usually introduce new impurity levels into g-
ity than the unmodified g-C3N4 [98–100]. C3N4, which broadens the absorption spectrum of the system or inhibits
the recombination of photogenerated electron-hole pairs. The typically
6.1.2. Ion doping studied ion doping systems, such as alkali earth metal elements (sodium,
Different from molecular doping, ion doping is a way of modifying potassium) and transition metal elements (iron, copper, cobalt and
the electronic structure of g-C3N4 by introducing impurity ions. Ion molybdenum), have been proven to be efficient in improving the PHE of

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Table 2
The commonly studied ion doped g-C3N4 in recently few years and the PHE activities of corresponding photocatalysts.
catalyst mass of catalyst Reaction solution Co- Light source R (H2) (μmol/ R (H2) of pure g-C3N4 Ref. (year)
(mg) catalyst g/h) (μmol/g/h)

B-g-C3N4 10 80 mL H2O and 20 mL TEOA 3 wt% Pt 300 W Xe lamp, 1639.39 901.35 [119]
>400 nm (2022)
3 3
B-g-C3N4 40 40 mL H2O and 20 mL methanol 1 wt% Pt Xe lamp, 350–700 3.80 × 10 2.25 × 10 [118]
nm (2021)
C-g-C3N4 20 40 mL H2O and 10 mL TEOA 3 wt% Pt 300 W Xe lamp, 1266.8 732.5 [107]
>420 nm (2020)
C-g-C3N4 100 180 mL H2O and 20 mL methanol 1 wt% Pt 500 W Xe lamp 216.8 75.8 [112]
(2019)
3
O-g-C3N4 25 90 mL H2O and 10 mL TEOA 3 wt% Pt 300 W Xe lamp, 2.2 × 10 0.68 × 103 [134]
>420 nm (2020)
P-g-C3N4 10 90 mL H2O and 10 mL TEOA 3 wt% Pt 300 W Xe lamp 6437 458 [135]
(2020)
P-g-C3N4 10 80 mL H2O and 20 mL TEOA 3 wt% Pt 300 W Xe lamp, 2.96 × 103 1.01 × 103 [116]
>400 nm (2021)
P-g-C3N4 50 72 mL H2O and 8 mL TEOA 3 wt% Pt 300 W Xe lamp, 10.985 1.445 [202]
>420 nm (2022)
Co-g-C3N4 20 40 mL H2O and 10 mL TEOA 3 wt% Pt 300 W Xe lam 3485.17 1161.17 [101]
(2019)
Co-g-C3N4 50 90 mL H2O and 10 mL TEOA 3 wt% Pt 300 W Xe lamp, 808.92 252.6 [106]
>420 nm (2021)
Co-g-C3N4 80 50 mL H2O and 6 mL TEOA 3 wt% Pt 300 W Xe lamp, 6227 803.6 [125]
>400 nm (2018)
K-g-C3N4 30 40 mL H2O and 10 mL TEOA 3 wt% Pt 300 W Xe lamp, 919.5 70.4 [105]
>420 nm (2019)
K-g-C3N4 30 90 mL H2O and 10 mL TEOA and 3 wt% Pt 300 W Xe lamp, 4.84 × 103 0.09 × 103 [127]
1 g NaCl >420 nm (2020)
S/K-g-C3N4 30 90 mL H2O and 10 mL TEOA and 3 wt% Pt 300 W Xe lamp, 8.78 × 103 0.09 × 103 [127]
1 g NaCl >420 nm (2020)
O/W-g- 50 80 mL H2O and 20 mL TEOA 1 wt% Pt 300 W Xe lamp, 403.57 171.21 [126]
C3N4 >400 nm (2021)
Mo/S-g- 25 90 mL H2O and 10 mL methanol N/A 300 W Xe lamp, 294 0 [123]
C3N4 >420 nm (2021)
Y/S-g-C3N4 10 27.9 mL H2O and 2.1 mL TEOA 1 wt% Pt 500 W Xe lamp, 19.2 1.2 [128]
>420 nm (2021)
C/O-g- 10 90 mL H2O and 10 mL TEOA 3 wt% Pt 300 W Xe lamp, 562 93 [130]
C3N4 >420 nm (2020)
Na/O-g- 50 60 mL H2O and 20 mL ethanol 1 wt% Pt 300 W Xe lamp, 110 16 [124]
C3N4 >400 nm (2017)

pure g-C3N4 [101–110]. Metal ions doping can be achieved by a simple C3N4 from 2.74 to 2.56 eV, and enlarges the corresponding light ab­
method in which metal salts, C precursors and N precursors are calcined sorption range. In addition, the introduced impurity ion inhibits the
together. Jiang et al. [101] carried out a comprehensive study of alkali recombination of photogenerated electron-hole pairs, thus significantly
metal-doped g-C3N4. As shown in Fig. 14a and b, the declined signals in increasing its PHE activity. Sun et al. [109] reported that the treatment
the XRD and BET measurements were observed when the doping atom of g-C3N4 with KOH can achieve the simultaneous K-doping and exfo­
changed from C, Li, Na, to K. The XRD signal at 27.4◦ can be ascribed to liation of g-C3N4, which endows the g-C3N4 with high surface area,
the interplanar stacking of g-C3N4, and the intensity of this peak grad­ enlarged conductive band edge, promoted charge generation and sepa­
ually weakened with the doping atom changing from C, Li, Na, to K, ration as well as the long life-time of photogenerated carriers.
implying that the in-plane structure was partially fragmented into Using the coordination effect between Pd and g-C3N4, Wang et al.
smaller crystallites. In addition, the decline specific surface area came [104] fabricated the palladium-doped graphitic carbon nitride (g-C3N4-
from the destruction and collapse of the pore structure caused by the Pd) photocatalyst through a calcination method (Fig. 16a), and the
used basic reagents. It was found from Fig. 14c that the dopant of alkali successful dopant of Pd atom can be confirmed from the element map­
metals results in narrower band gaps with more positive VB and less ping (Fig. 16b). In XRD measurement, g-C3N4-Pd displayed a shift of the
negative CB positions, indicating more efficient visible light utilization (1 0 0) peak toward low angle (Fig. 16c and d), indicating that the
and charge excitation efficiency. As a result, the doped samples with introduction of Pd atom leads to the increase of the distance of in-planar
alkali metals displayed much higher H2 evolution ability than pure g- nitride pores. At the same time, no shift was observed over the peak at
C3N4 (Fig. 14d), demonstrating that the metal ion doping is efficient in around 27.4◦ corresponding to the interlayer distance of g-C3N4, indi­
improving the photocatalytic activity of g-C3N4. cating that the Pd atoms locate at the sixfold cavities of g-C3N4. In
Hu et al. [107] synthesized a series of K-doped g-C3N4 by co- addition, due to the existence of Pd atoms, the light absorption edge of g-
calcination of potassium hydroxide and dicyandiamide, and studied C3N4 was extended toward longer wavelength (Fig. 16e), which is
the effect of K dopant amount on the energy band stricture of g-C3N4. It benefit to the photocatalytic reaction. The g-C3N4-Pd20 displayed the
was found that the introduction of K atom resulted in a series of highest photocatalytic H2 evolution activity of 316.2 μmol/g in 3 h
adjustable energy band structure of g-C3N4 (Fig. 15), and the proper (Fig. 16f), which is 15.3 times higher than that of pure g-C3N4. Based on
band structure makes it possible to produce both ⋅OH and ⋅O2− radicals the theoretical calculation, the Gibbs free energy of hydrogen adsorbed
at the same time, thus effectively promoting the photocatalytic activity on Pd is greatly reduced to − 1.82 eV compared with hydrogen adsorbed
of g-C3N4. Wang et al. [108] doped Mo ions in flower-like g-C3N4 on g-C3N4 (− 3.71 eV) (Fig. 16g), indicating that the Pd doping improves
through the combination of hydrothermal method and calcined method, the hydrogen evolution kinetics on g-C3N4. Thus, it can be concluded
and found that the introduction of Mo reduces the band gap width of g- that the introduction of Pd atoms harvests photogenerated electrons

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 14. (a) XRD signal intensity, (b) BST measurements, (c) band structures and (d) hydrogen evolution rates for pristine g-C3N4 and modified g-C3N4. Adapted with
permission from ref [101]. Copyright 2017 Elsevier.

Fig. 15. (a) UV–vis diffuse reflectance spectra of as-prepared g-C3N4-based catalysts, inset is the possible doping site for K ions in K(x)–CN, (b) band gap structures of
as-prepared g-C3N4 and K(x)–CN. Adapted with permission from ref [107]. Copyright by 2015 Royal Society of Chemistry.

from g-C3N4 and plays the role of active sites for hydrogen evolution contamination of metal element, and poor thermal stability, are still
(Fig. 16h). This work demonstrates that the doping of metal ions not cannot be ignored. The introduction of non-metallic elements has
only plays the role of band structure manipulation, but also works as attracted increasing research interest these years. Compared to metal
reaction active sites to facilitate the generation of hydrogen. ions, the band structure of g-C3N4 can be regulated by doping non-
Although much efforts have been made in the research of metal ion metallic elements without changing its non-metallic properties. Up to
doped g-C3N4, some headache problems, such as high cost, now, nonmetallic elements including C, N, O, phosphorus (P), sulfur (S),

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 16. (a) Schematic of the synthesis of g-C3N4-Pd photocatalysts, (b) HAADF-STEM image of g-C3N4-Pd20 and elemental maps of C, N, and Pd, (c) full XRD
patterns of g-C3N4 and Pd-doped g-C3N4 samples, (d) enlarged XRD view of (1 0 0) peaks, (e) intensity ratios of (0 0 2) to (1 0 0) peaks of the four samples, (f) ab­
sorption spectra of g-C3N4 and differently Pd-doped g-C3N4 samples. The inset is the photographs of the samples, (g) hydrogen produced ability within 3 h for the four
samples, (h) free-energy diagram of H adsorbed on g-C3N4 and Pd-doped g-C3N4, (i) mechanism of PHE in Pd doped g-C3N4. Adapted with permission from ref [104].
Copyright 2018 American Chemical Society.

Fig. 17. (a) Synthesis procedure of porous PCN-S, (b) top and side view of the optimized pure g-C3N4 and P-doped g-C3N4 configuration, color scheme: C, grey; N,
blue; P, orange, (c) electronic band structures of CN-B, CN-S, PCN-B, and PCN-S. (d) photocatalytic H2-production mechanism of porous PCN-S. Adapted with
permission from ref [125]. Copyright 2015 Royal Society of Chemistry.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

boron (B) and halogen have been introduced into the structure of g-C3N4 fabricated Mo/S co-doped porous g-C3N4. Fang and coworkers [128]
and have been proven to be effective in obtaining much improved fabricated the Na/O co-doped g-C3N4. Si et al. [129] reported the Co/N
photocatalytic activity [111–126]. For example, Ran et al. [125] fabri­ co-doped g-C3N4. Wei et al. [130] reported the fabrication of W/O co-
cated P atom doped g-C3N4 NSs (PCN-S) through a combination of P doped hollow g-C3N4 tubular structure, which displayed 2.5 times
doping and the thermal exfoliation method (Fig. 17a). All the doped P higher H2 evolution activity than pure g-C3N4. Chen et al. [131] re­
atoms replace C1 in the heptazine unit of PCN-S, which enlarges the in- ported that the S/K-co-doped g-C3N4 displayed 98 times higher H2
planar distance of nitride pores from 6.95 Å to 7.04 Å (Fig. 17b). At the evolution rate than the pristine g-C3N4. All of these results have
same time, the doped P atoms bring mid-gap states into g-C3N4, which demonstrated that the synergistic effect in the co-doped g-C3N4 is more
plays the role of electron capture center to harvest photogenerated benefit to the expanding of light absorption region, the exposure of
electrons from g-C3N4, thus efficiently improving the separation and specific surface area and active reaction sites, the separation of charge
transport efficiency of photogenerated carriers (Fig. 17c and d). carriers, as well as the optimization of photoreduction potential. The
In 2021, Zhao et al. [127] fabricated boron atom doped g-C3N4 NSs fabrication of double element doped g-C3N4 may provide an alternative
(BDCNN) via a two-step ultrasonication-calcination process (Fig. 18a) for the development of high-performance g-C3N4 with a cost-effective
by using NaBH4 as the B-precursor. It was found that the introduced B and facile path.
atom brings a mid-gap state into the forbidden band of g-C3N4, which Molecular structure regulation is an easy operated path in improving
results in a red-shift of the light absorption edge and a changed color the photocatalytic active of g-C3N4, both metal/non-metal elements and
from pale yellow to dark brown (Fig. 18b and c). The energy band shift the functional groups can be introduced into g-C3N4 through a simple
induced by B atom can be confirmed from the overall water splitting thermally polymerizing or copolymerizing method by reacting with the
reaction (Fig. 18d and e), in which the compound of BDCNN and CNN precursors containing target elements, the ultimate aim of molecular
are capable in generation of O2 and H2 at the same time and keep stable structure regulation is to manipulate the band structure of g-C3N4
in long time recycle. This is because that both the VB and CB positions of through shrinking the band gap, improving the CB potential or creating
the BDCNN are much lower than that of CNN (Fig. 18c), the band energy doped energy level, which is benefit to expand the light absorption
position shifted much downward enables BDCNN to drive the water- wavelength, increase the reducibility of photogenerated electrons and
oxidation reaction while the CB of CNN is negative enough for H2 suppress charge recombination.
reduction reaction.
In recent years, the fabrication of dual-element doped g-C3N4 system
has attracted more and more attention [113,127–133]. Li et al. [127]

Fig. 18. (a) Schematic of the synthesis of BDCNN derived from CNN, below are respectively the TEM images of CNN and BDCNN, (b) UV–visible DRS of CNN and
BDCNN, insets show photographs of the CNN and BDCNN, (c) band structure alignments for CNN and BDCNN, (d) the overall water-splitting performance and (e)
cycling of photocatalytic overall water splitting over CNN/BDCNN. Adapted with permission from ref [126]. Copyright 2021 Springer Nature.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

6.2. Defect engineering defect rich g-C3N4 NSs by using an alkali assisted method, which effi­
ciently avoids the high temperature treatment process in reducing at­
Except for the introduce of impurity atoms, the photocatalytic per­ mosphere and can facilitate the formation of uniform phase defects at
formance of g-C3N4 can also be regulated through constructing nitrogen the same time. The obtained sample displayed superior visible light
or carbon defects into the heptadazine structure unit. This is to say, absorption capacity and photogenerated electron-hole separation effi­
breaking the intrinsic π-π conjugate of pristine g-C3N4 [53,136–141]. As ciency, as well as the greatly improved photocatalytic performance. Niu
a matter of fact, defects are essential for photocatalytic reactions et al. [53] created nitrogen vacancies by treating g-C3N4 in a H2 atmo­
because they can provide active sites for reaction and are efficient in sphere at the temperature of 520 to 550 ◦ C. As shown in Fig. 19a,
expanding the visible light absorption range of the material by intro­ compared with the material without layered structure, the layered
ducing additional energy bands into the forbidden band of g-C3N4. At the structure property of g-C3N4 enabled H2 to easily penetrate the layer gap
same time, the existence of defects usually serves as trapping sites to of carbon nitride through diffusion and enter the inner of bulk g-C3N4,
suppress the recombination of electron-hole pairs, thus to improve the thus formed a homogeneous self-modification with vacancies. Based on
utilization of photogenerated charge carriers [142–148]. the DFT calculations (Fig. 19b and c), the formation of vacancies is due
Compared with the doping strategy, defect engineering is a self- to that a N atom at the position of N2 was reduced into NH3 molecule
modification strategy of molecular structure without introducing im­ because of the lowest change in energy (ΔE) of 0.65 eV, thus induced a
purities, which is more beneficial to the long-time durability of the nitrogen vacancy in the Triazine ring skeleton of g-C3N4. It was noticed
photocatalysts. For example, Liang et al. [139] treated bulk g-C3N4 at from the UV–vis absorption spectra that the H2 treated sample displayed
the temperature of 490–520 ℃ under ammonia (NH3) atmosphere, and much enlarged light absorption ability in the visible region (Fig. 19d),
the obtained g-C3N4 NSs displayed sufficient carbon vacancies, which this is because that the formation of nitrogen vacancy reduced the direct
extended the light absorption edge to near-infrared region and brought band gap of g-C3N4 from 2.34 eV to 1.70 eV as a result of down-shifted
nearly 20 times enhanced photocatalytic hydrogen production capacity CB and up-shifted VB edges (Fig. 19e and f). It is confirmed that, the
than that of before-treated g-C3N4. Objectively speaking, this strategy introduction of vacancies contributes to the expanded light absorption
asks for a relative harsh reaction condition and usually results in uneven capacity due to the formation of intermediate energy level. However, it
surface defects. Later, Yu et al. [140] reported the fabrication of nitrogen should be emphasized that, this expansion of light absorption ability

Fig. 19. (a) Schematic illustration of difference of H2 reduction results in the nonlayered material and the layered material, (b) g-C3N4 and (c) H2 reduced g-C3N4
with one group of NH2 (located at N2) substituted by a H atom. (d) UV–visible absorption spectra of the samples, (e) Band structures calculation of g-C3N4 and H2
reduced g-C3N4, (f) VB and CB positions of g-C3N4 and H2 reduced g-C3N4. Adapted with permission from ref [53]. Copyright 2014 Wiley-VCH.

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comes at the expend of the reduction of REDOX capacity of photo­ un-doped fraction and cyano group take the duty to oxidize water. Their
generated charge carriers, which may have adverse effects on photo­ works demonstrated that the proper defect engineering can facilitate the
catalysis because too low REDOX potential would unable to overcome separation and utilization of charge carriers in space and thus acceler­
the energy barrier required for hydrogen production. ating the generation of hydrogen.
Huang et al. [144] treated g-C3N4 with nitric acid to introduce N In general, the distribution and type of defects have direct effect on
vacancies into the sample. It was found that the N vacancies might be the PHE active of g-C3N4. The formation of defect can be manipulated
replaced by O atoms, thereby adjusting the visible light absorption, band through the fabrication strategy and the addition of strong acid or
gap, carrier density as well as the separation efficiency of photo­ alkaline liquid, which usually introduced strongly electronegative
generated charge carriers. Moreover, based on the intrinsic relationships functional groups, such as -OH, -COOH, -OCH3 and -NHx and result in a
between the surface functionalities and PHE rates, it was concluded that change of local electronegativity and thus facilitating the separation of
the -O-H species in CNx act as an inhibitor for H2 production, while the charge carriers. Compared with molecular structure regulation strategy,
–C=O/-O, -NHx and N defects at N2C sites (including N vacancies and N defect engineering can not only affect the electronic distribution and
replaced by O atoms) act as the active sites for the generation of energy band of g-C3N4, but also change the reaction dynamics of PHE by
hydrogen (Fig. 20a). As a result, the decoration of N vacancies improved increasing the exposure of active reaction surface, facilitating the
the photocatalytic H2 evolution to as high as 1160 μmol/h/g, which was adsorption and desorption process of intermediate H*, as well as
about 19 times higher than that of pristine g-C3N4 (Fig. 20b). Yang et al. changing the local electron distribution in g-C3N4 molecule to improve
[147] induced heterogeneous structural defects in porous g-C3N4 charge separation efficiency. Both the introduction of impurity elements
through a facile treatment method, in which the edge nitrogen and and the defects engineering focus on expanding the light response,
cyano group were replaced by oxygen atom. The formation of C-NHx changing local electron density, as well as manipulating the energy band
bonds on the edge of aromatic ring, the reduced electron density of ni­ structure, which is expected to accelerate the generation, separation and
trogen atoms, as well as the formation of N-C-O and C=O species in the utilization of charge carriers. Nonetheless, it should be mentioned that
lattice can be confirmed from the XPS measurements (Fig. 20c to e), it the introduction of doping elements and defects also suffered the for­
thus can be concluded that cyano group trends to appear at apex of mation of new charge recombination traps in the g-C3N4 sometimes,
melon structure following the de-protonation of C-NHx species which result in the decline of PHE active. Therefore, careful selection of
(Fig. 20f). Consequently, the after modified sample displayed a high H2 preparation methods and optimization of the concentration and distri­
evolution performance of with an AQE of 8.41 % at the wavelength of bution of dopants and defects is required to minimize negative effects.
420 nm (Fig. 20g to i). This can be ascribed to the results based on
theoretical calculation that the doped oxygen atom and the nearby
atoms accept electrons as reduction site to produce hydrogen, while the

Fig. 20. (a)The active-site structure diagram of CNx for photocatalytic H2 production, (b) time course of H2 evolution for CN0 and CN3. Adapted with permission
from ref [144]. Copyright 2019 Elsevier. (c) to (e) are the high resolution XPS spectra of (c) C1s, (d) N1s and (e) O1s for GCN and COC30, (f) charge density difference
comparison after loading oxygen atom and cyano group, (g) photocatalytic generated hydrogen amount of GCN and COC30, (h) Hydrogen amount of GCN and COC30
under monochromatic light illumination with the corresponding AQEs in the inset figure, (i) the cycling PHE of GCN and COC30 for 40 h. Adapted with permission
from ref [147]. Copyright 2019 Elsevier.

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6.3. Optimization of microstructure g-C3N4 directly by using a thermal-chemical etching process (Fig. 21a),
the obtained g-C3N4 quantum dots have a small size distribution of 5 ~
Microstructure optimization is another important method in 9 nm (Fig. 21b and c). Due to the special quantum size effect, the sample
improving the photocatalytic performance of g-C3N4. From the micro­ displayed excitation-wavelength-depended photo luminescence under
scopic point of view, the structure regulation of g-C3N4 mainly includes the wavelength from 340 to 420 nm (Fig. 21d). Importantly, they
multi-dimensional design and the introduction of porous structures, observed obvious up-conversion luminescence properties over the
which is to increase the specific surface area and increase the reactive CNQDs (Fig. 21e) for the first time. The special up-conversion PL
active sites. properties indicates that the CNQDs can convert NIR light to visible light
and makes it possible in take use of the solar energy at NIR region to
6.3.1. Design and construction of multi-dimensional nanostructures accelerate the photocatalytic reaction. As shown in Fig. 21f, when
The photocatalytic performance of g-C3N4 can be controlled through combined with bulk g-C3N4, the as-fabricated sample displayed much
the size distribution and morphology characterization. Up to now, the increased H2 evolution ability. Upon photo-excitation (Fig. 21g), visible
typical nanostructure g-C3N4 include zero-dimension (0D) quantum light with wavelength shorter than 600 nm can be harvest by the bulk g-
dots, one-dimensional (1D) nanowires, nanotubes and nanorods, two- C3N4 while the long wavelength (>600 nm) is upconverted by CNQDs
dimensional (2D) NSs, three-dimensional (3D) nanoflowers and nano­ for the subsequent excitation of g-C3N4 to form electron-hole pairs. As a
network structures have been studied. Multi-dimensional structure result, CNQDs show promise to be used as general energy-transfer
design endows g-C3N4 with different physical and chemical properties, components in photo catalytic systems to harness the Vis-NIR spec­
thus making the generation and utilization of charge carrier adjustable trum of sunlight.
and expanding the regulatory scale of photocatalytic performance.
6.3.1.2. 1D nanostructures g-C3N4. Compared to 0D materials, 1D
6.3.1.1. 0D nanostructure g-C3N4. 0D nanostructure g-C3N4 is usually nanostructures can provide fast conduction channels for photogenerated
the quantum dots with a tiny size of 1 ~ 10 nm, the most outstanding charge transport, at the same time, the physical and chemical properties
merit is the sufficient surface-active sites due to the large relative surface of materials can be optimized by adjusting the length and diameter of
area. In addition, the tiny size of 0D g-C3N4 makes it easy to be combined the material, thus improving their photocatalytic performance. In recent
with other materials or loaded into some materials with special struc­ years, 1D g-C3N4 such as nanowires, nanorods, nanotubes and nano­
ture. At the same time, it was reported that the 0D g-C3N4 often displays ribbons have been reported and proven to be more efficient in photo­
special light absorption ability and optical emission to that of bulk phase catalysis than that of bulk materials [139,153–160]. You et al. [159]
materials due to the quantum size effect, and thus have attracted much fabricated the g-C3N4 through the template-free thermal condensed
researches [149–152]. 0D g-C3N4 can be prepared by the “bottom-up” process. Li et al. [162] reported the fabrication of 1D tubular g-C3N4 by
methods such as low temperature solid phase strategy and microwave using a modified chemical method. Zeng et al. [156] fabricated the 1D
assisted strategy, as well as the “top-down” methods through thermo­ porous g-C3N4 by direct calcination method (Fig. 22a to c). Zhang et al.
chemical or electrochemical etching of bulk g-C3N4. Zheng et al. [153] [160] fabricated helical g-C3N4 nanorods with left-handed and right-
fabricated the g-C3N4 quantum dots with the size of about 3.2 nm by handed chirality by using mesoporous silica as template. The chiral g-
using a thermal chemical etching method. Compared with bulk material, C3N4 nanorods exhibited unique optical properties for circular-polarized
the obtained 0D g-C3N4 efficiently shorten the transport path of charge light at the optical absorption edge and efficiently enhanced the charge
carriers and improved the separation of photogenerated electron-hole carrier mobility due to the special rod-like structure, which thus wit­
pairs. Wang et al. [152] fabricated 0D g-C3N4 quantum dots from bulk nessed an improved photocatalytic performance. Liu et al. [161]

Fig. 21. (a) Schematic illustration of the controllable synthesis of g-C3N4 NSs, nanoribbons and quantum dots, (b) TEM images and (c) diameter distribution of
CNQDs, (d) PL spectra of the CNQDs at different excitation wavelengths. Inset: photograph of the CNQD aqueous solution taken under 365 nm UV light, (e) the up-
conversion PL spectra of the CNQDs, (f) photocatalytic H2 production for the samples with 1 wt% Pt under visible light irradiation (λ > 420 nm) using trietha­
nolamine as the sacrificial agent, (g) Proposed photocatalytic mechanism for CNQDs under visible light. Adapted with permission from ref [152]. Copyright 2014
Royal Society of Chemistry.

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Fig. 22. (a) schematic illustration of the formation of g-C3N4 nanorod/InVO4 hollow sphere composites. Adapted with permission from ref [159]. Copyright 2017
Elsevier. (b) schematic illustration of the synthesis of the core–shell LaPO4/tCN nanocomposites. Adapted with permission from ref [162]. Copyright 2017 Elsevier.
(c) Synthesis procedure of porous O-g-C3N4 NR. Adapted with permission from ref [156]. Copyright 2017 Elsevier.

prepared P-doped g-C3N4 nanotubes with a diameter of about 200 nm by significantly reduced impedance to photogenerated carriers and excel­
co-calcination of sodium hypophite and melamine in a one-step method. lent photocatalytic performance.
Compared with bulk g-C3N4, P-g-C3N4 nanotubes displayed a Bai et al. [158] achieved the conversion of g-C3N4 from 2D

Fig. 23. (a) The Schematic illustration of the formation process of g-C3N4 nanorods from g-C3N4 nanoplates, (b) Photo-responses of g-C3N4 nanoplate and g-C3N4
nanorod electrodes under visible light irradiation (λ > 420 nm, [Na2SO4] = 0.1 M). Apparent photocatalytic performance over g-C3N4 nanoplates and g-C3N4
nanorods: (c) under visible light (λ > 420 nm) and (d) under simulated solar (λ > 290 nm). Adapted with permission from ref [158]. Copyright 2013 American
Chemical Society.

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nanoplates to 1D nanorods by using a simple reflux method (Fig. 23a), factor in PHE [167–172]. As an unique 2D photocatalyst, g-C3N4 NSs
the as-fabricated 1D g-C3N4 nanorods displayed much higher photo­ retain the original aromatic heterocycle structure of the C-N compound,
catalytic activity and photocurrent intensity than that of g-C3N4 nano­ which contributes to the high speed in plane transfer of electrons due to
plates under visible light (Fig. 22b to d). the π-π conjugate. At the same time, the 2D structure significantly
Zeng et al. [156] fabricated 1D porous architectural g-C3N4 nanorods shorten the charge transfer distance from inner to the surface of pho­
(NRs) through the calcination of hydrous melamine nanofibers tocatalyst compare to that of bulk materials. Moreover, similar to 0D
(Fig. 24a). The formation g-C3N4 NRs with porous structure can be quantum dots, 2D NSs also provides abundant active sites, which is
confirmed from the morphology characters including TEM and SEM conducive to the light harvest and the adsorption of reactant molecules
images in Fig. 24b and c. The thermal treatment brings O impurity into [171–173,180]. Up to now, both monolayer and multilayer g-C3N4 NSs
g-C3N4 and forms the oxygen-doped g-C3N4 structure (Fig. 24d). It was have been successfully prepared and reported. Some researchers ob­
noticed that the O doped g-C3N4 NRs shrunk the light absorption ability tained g-C3N4 NSs through peeling from bulk material by using physical
of bulk g-C3N4 (Fig. 24e) and changed the VB position from +1.68 for or chemical methods, and others fabricated g-C3N4 NSs through the
bulk g-C3N4 to +1.85 eV (Fig. 24f and g). Although O-g-C3N4 NRs dis­ utilization of suitable two-dimensional templates (Fig. 25). For example,
played weaker light absorption ability than that of bulk g-C3N4, the H2 Liang et al. [164] fabricated single-layer g-C3N4 NSs through peeling
evolution ability of O-g-C3N4 NRs was much higher than the later sample bulk g-C3N4 under the assist of ultrasonic in the pure water medium, the
(Fig. 24h). Compared to bulk g-C3N4, the porous 1D nanorods provide obtained single-layer g-C3N4 NS was about 55 nm in the transverse
more specific surface area for photocatalytic reaction and the porosity of dimension and 0.6 nm in thickness, and the production yield of the
the material provides large number of active sites and quick access to sample was about 30 %. Importantly, the sample displayed much higher
reactants. Compared with bulk materials, the 1D nanorods have larger visible light driven catalytic activity than that of multilayer g-C3N4 NSs.
specific surface area and more sufficient surface-active sites, as well as Fan et al. [180] fabricated g-C3N4 NSs by using diatom matrix as tem­
the accelerated interfacial movement of photogenerated electrons along plate, and the obtained g-C3N4 NSs displayed large specific surface area
the length of rods, thus dramatically accelerated the axial charge (135 m2/g) and better electron hole pair separation characteristics,
transfer and improved photocatalytic performance [163]. which resulted in a significantly improved visible light catalytic ability
than that of bulk sample.
6.3.1.3. 2D nanostructures g-C3N4. The fabrication of 2D g-C3N4 nano­ Qu and co-workers [170] synthesized a single atomic layered g-C3N4
structure is one of the research hotspots of two-dimensional layered mesh through the solve-thermal exfoliation of mesoporous g-C3N4
materials, and has have been widely studied in PHE [136,164–180]. g- (Fig. 26a), the g-C3N4 mesh displayed a thin thickness of less than 0.5
C3N4 is a graphene like layer structure, but the strong interlayer van der nm (Fig. 26b and c). The as fabricated g-C3N4 mesh displayed an up­
Waals force usually induces the harmful interlayer stack and results in a ward shifted energy band compared with that of bulk g-C3N4, indicating
low specific surface area (even less than 10 m2/g), at the same time, the an improved reduction ability of the photogenerated electrons. As a
charge carriers recombination in the bulk material is also an adverse result, the H2 evolution rate of the monolayer mesoporous g-C3N4 mesh

Fig. 24. (a) Schematic illustration of O-g-C3N4 NR formation: morphologies (top) and structures (bottom), (b) TEM image of O-g-C3N4 NRs, (c) SEM image of O-g-
C3N4 NRs, (d) HADDF, EDS and element mapping of O-g-C3N4 NRs with the addition of 3 wt% Pt. Adapted with permission from ref [156]. Copyright 2017 Elsevier.

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Fig. 25. The fabrication of two dimension by g-C3N4 using different strategies (a) bath and probe sonication strategy. Adapted with permission from ref [164].
Copyright 2017 Science China Press and Springer-Verlag Berlin Heidelberg. (b) thermal exfoliation strategy. Adapted with permission from ref [172]. Copyright 2020
Elsevier. (c) liquid exfoliation strategy. Adapted with permission from ref [174]. Copyright 2020 Elsevier. (d) and (e) are calcination method. Adapted with
permission from ref [166], copyright 2016 Wiley-VCH and adapted with permission from ref [136], copyright of 2020 Elsevier. (f) chemical exfoliation strategy.
Adapted with permission from ref [57]. Copyright 2013 Royal Society of Chemistry. (g) and (h) are TEM images of two-dimension g-C3N4. Adapted with permission
from ref [173]. Copyright 2016 Elsevier.

Fig. 26. (a) Fabrication process of monolayer mesoporous g-C3N4 NSs. (b) AFM image of the synthesized mesoporous g-C3N4NSs; the inset shows the enlarged view
of the rectangle area. (c) height profiles along the lines in (b). (d) the valence band spectra and electronic band structure of the monolayer mesoporous g-C3N4 NSs
and the bulk counterpart. (e) photocatalytic activity of (i) the monolayer mesoporous g-C3N4 nanomesh, (ii) the bulk counterpart, (iii) the traditional g-C3N4 bulk
under irradiation with visible light (>420 nm). Adapted with permission from ref [170]. Copyright 2016 American Chemical Society.

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was measured to be 8510 μmol/h/g, which was much higher than that same time, 3D structure avoids the agglomeration of low-dimensional
over other 2D g-C3N4 nano structures reported previously. Nowadays, structural units, and provides a three-dimensional interconnection
there is still plenty of room for us to increase its specific surface area network for electron transport and ion diffusion, which benefit to the
because its theoretical specific surface area can reach 2500 m2/g for improvement of photocatalytic performance [181–188]. Many strate­
ideal monolayered g-C3N4 [22]. gies including template and template-free method have been used for
Fang et al. [178] peeled bulk g-C3N4 (BCN) into 2D g-C3N4 NS the synthesis of 2D g-C3N4. A s shown in Fig. 28, Li et al. [184] reported
(CNNS) with the etching assistance of anhydrous ethylenediamine the fabrication of 3D g-C3N4 by using SiO2 as a hard template through a
(ADE) for the first time. As shown in Fig. 27a, the strong corrosivity of thermal treatment strategy. Huang et al. [181] fabricated the 3D hollow-
AED can break down the hydrogen bonds existing between the CN layers sphere structure g-C3N4 through a template-free heat polymerization
easily and pealed BCN into CNNS, and resulted in a changed color from route. In 2022, Wang et al. [188] synthesized 3D network structure g-
yellow to off-white (Fig. 27b). Caused by the relatively large specific C3N4 through the assembly of g-C3N4 nanowires by using hydrothermal
surface area of the CNNS (from 4.7 to 31.1 m2/g), a more stable and calcination processes. The morphology and special structure of the
dispersion in liquid can be observed with an obvious Tyndall effect in obtained samples depends on the precursors and synthesis procedures.
the solution after stored of 40 days (Fig. 27c). The formation of 2D NS Luo et al. [182] fabricated three-dimensional network structure g-
can be confirmed from TEM images (Fig. 27d to f) and a large lateral size C3N4 via a chemical tailoring route (Fig. 29a). Firstly, bulk g-C3N4 was
of more than 15 μm can be observed from AFM measurement (Fig. 27g). tailored into little pieces with a small amount of heptazine ring
Due to the size effect, the band gap of 2D CNNS was wider than that of repeating units with -NHx and -OH groups by treating with hot
BCN, with energy band position of both CB and VB shifted toward more concentrated nitric acid. Meanwhile, the structural hydrogen bonding
positive direction (Fig. 27h). Even so, due to the dramatically enhanced between melon units in bulk g-C3N4 could be broken by the strong
specific surface area of the special 2D structure, an excellent improved oxidation of nitric acid, Thus, when pH was close to neutral, these pieces
H2 evolution ability was observed over the CNNS, which increased from could self-assemble into the nanorod-like precursor via hydrogen bonds
4.8 μmol/g/h to 35.3 μmol/g/h, about 7.4 times than that of BCN, as like N-H⋅⋅⋅O, N-H⋅⋅⋅N in layers and π-π conjugation between layers. After
well as good durability (Fig. 27i and j). then, these nanorods precursor intertwined to form a 3D network
structure (Fig. 29b and c). The as-fabricated 3D structure the g-C3N4
6.3.1.4. 3D nanostructure g-C3N4. 3D structure g-C3N4 keeps the exhibited 6.7 times higher specific surface area than that of bulk g-C3N4
attractive merits of low dimension materials, such as high specific sur­ (Fig. 29d), at the same, the charge carrier transfer resistance decreased
face area, sufficient active sites and good light absorption ability. At the from 1812 kΩ to 657.5 kΩ (Fig. 29e). The increased specific surface area

Fig. 27. (a) Diagrammatic sketch for the exfoliation of CNNS. (b) Photographs of BCN and CNNS, (c) status of 5 mg photocatalysts in 10 vol% TEOA aqueous solution
after natural sedimentation for different days. (d-f) TEM and HR-TEM images of CNNS. (g) AFM image showing the lateral dimensions and thickness of CNNS. (h)
bandgap structures of BCN and CNNS, (i) comparison the visible-light photocatalytic H2 evolution of BCN and CNNS, (j) wavelength dependent H2 evolution of
CNNS. The inset is photocatalytic durability test for CNNS under visible light irradiation. Adapted with permission from ref [178]. Copyright 2017 American
Chemical Society.

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Fig. 28. The fabrication of through controlling the assemble of 3D g-C3N4 by using different strategies (a) SiO2-based template method. Adapted with permission
from ref [184]. Copyright 2021 Elsevier. (b) heat polymerization method. Adapted with permission from ref [181]. Copyright 2019 Elsevier. (c) Self-assembly
method. Adapted with permission from ref [188]. Copyright 2019 Elsevier.

and the decreased charge transfer resistance resulted in a 5.9 times crystalline NSs provides a path for the quickly transfer of charge carriers,
improved H2 evolution ability (Fig. 29f). at the same time, the formed 3D network prevents the agglomeration of
Qian et al. [186] fabricated 3D porous g-C3N4 by using a NaCl- the NSs and endows the photocatalyst with good durability of more than
assisted ball-milling strategy. As shown in Fig. 30a, melamine is first 100 h (Fig. 31).
surrounded by NaCl crystals after ball-milling. Then, the situ generated
g-C3N4 sheets are pierced and separated by NaCl crystals during the 6.3.2. Construction of porous structure g-C3N4
annealing process owing to the higher melting point of NaCl. Finally, 3D The porous structure plays important role in the photocatalytic re­
porous g-C3N4 is obtained after removing of NaCl through the water action process. Generally speaking, porous structure can increase the
treatment. It was found that the porosity and micro structure of the 3D g- specific surface area and active sites of catalysts, and promote the
C3N4 can be controlled through the addition concentration of NaCl and transport and diffusion of carriers and ions. In addition, porous structure
thus have direct effect on the photocatalytic behaviors of the porous can obviously reduce the reflectance of light and increase the absorption
samples. As shown in Fig. 30b and c, compared to M0 (without the coefficient of light. Moreover, some special pore structure can be used as
addition of NaCl), M90 (the mass ratio of melamine and NaCl was 1:90) a micro-reactor to provide uniform chemical micro-environment for the
undergoes an increased light absorption ability in UV region a lighter photocatalytic reaction [189–197]. Based on the above-mentioned
color, considering that the band gap of M90 is larger than that of M0, the merits, the construct of porous g-C3N4 (PCN) has attracted many re­
increased UV light harvest ability indicates a better light adsorption searches. Up to now, template methods are widely utilized in the
ability due to the formation of porous structure. With the merits of this fabrication of porous structure g-C3N4. In a typical thermal condensation
unique structure, the obtained 3D porous g-C3N4 exhibited a hydrogen polymerization, both hard template method and soft template method
evolution rate of 598 μmol/h/g (Fig. 30d and e) with an apparent are used [118,198–207]. As shown in Fig. 32 and Fig. 33, Zhang et al.
quantum yield of 3.31 % at 420 nm for photocatalytic H2 generation, [197] synthesized PCN by using colloidal silica (SiO2) and dicyandia­
which is much higher than that of the bulk g-C3N4. Similarly, the mide (DCDA) as the hard template and precursor, respectively. Wang
fabrication of 3D open porous g-C3N4 was reported by Chen and co­ et al. [205] fabricated PCN by using CaCO3 as the hard template. Chen
workers by using the salt assisted method [183]. and coworkers [206] reported the fabrication of PCN by using carbon
Chen et al. [187] constructed a 3D porous structure photocatalyst nanotube as a novel recyclable hard template. Li et al. [207] fabricated
through the assembly of ultra-thin g-C3N4 NSs, which was successful in the heterogeneous TiO2/g-C3N4 with a layered mosaic stack structure by
the complete decomposition of water into hydrogen and oxygen under using montmorillonite as a hard template. All of these methods can
visible light. The 3D interconnected framework consisted of highly successfully obtain the g-C3N4 with designed porous structure. Khamrai

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Fig. 29. (a) Schematic illustration of the synthetic route for 3D g-C3N4 NR, (b) and (c) are separately the SEM and TEM images of 3D g-C3N4 NR, (d) Nitrogen
isothermal adsorption–desorption curves (Pore volume distribution inset), (e) electrochemical impedance spectra (the equivalent circuit impedance model inset) and
(f) H2 evolution ability of 3D g-C3N4 NR and bulk g-C3N4. Adapted with permission from ref [182]. Copyright 2019 Elsevier.

et al. [189] fabricated mesoporous g-C3N4 by using silica (SiO2) nano­ structure with lots of non-uniform networks (Fig. 34b and c).
spheres as template and mono-cyanamide as precursor. The obtained Cheng et al. [193] fabricated porous g-C3N4 with disordered
mesoporous catalyst has abundant ordered pore size of 5–10 nm, which nitrogen-defect-rich character by using biuret as a new precursor
provides sufficient active sites for the photocatalytic reaction. Wang (Fig. 35a), and the formation of porous structure on the surfaces of NSs
et al. [118] reported the preparation of PCN by using NaH2PO4⋅2H2O as can be confirmed by the TEM images in Fig. 35b and c. It was found that
a soft template. Chen e al. [208] fabricated the PCN by using sulfur- the as-fabricated samples displayed much improved H2 evolution ability
bubble as a soft template. Yan [209] fabricated PCN by using Pluronic than that of pristine g-C3N4 and high AQY of about 14.49 % at the
P123 surfactant as soft template and melamine as precursor. wavelength of 420 nm (Fig. 35d and e). The authors thought that the
Hard template method is simple to control, but the corrosive reagents ultra-thin and porous features synergistically promoted the effective
usually are used to remove the templates, which faces the risk of bring separation of photo-generated carriers by shorting the migration dis­
damage to environment, but the use of soft template method faces the tance and provided abundant reactive sites for the photocatalytic reac­
problems such as low polymerization and the residue of template, which tion (Fig. 35f). Wu et al. [190] synthesized Co and Mo co-doped
affect the photocatalytic activity [192,193,210]. Thus, the template free mesoporous g-C3N4 with high specific surface area by using a
method is an alternative novel and popular strategy in the fabrication of template-free method. This bimetallic component and mesoporous
PCN [190–196]. She et al. [192] fabricated oxygen-doped porous ultra- structure can provide more active sites, improve light absorption ca­
thin g-C3N4 NSs (PUOCNs) by combing the calcined method and pacity, promote photogenerated carrier separation and enhance mass
chemical oxidation method at room temperature with a template-free transfer, thus significantly improving the photocatalytic ability of pure
procedure. HNO3 and H2SO4 are utilized to destroy the 2D plane and g-C3N4.
generate porous structure in the as fabricated g-C3N4 NSs (Fig. 34a). It As a typical surface reaction, PHE process significantly relies on the
can be observed from the TEM images that the g-C3N4 are of the NS light response ability and the exposure of active reaction sites of the

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Fig. 30. (a) Schematic illustration of the synthesis procedure of porous g-C3N4, (b) UV–vis diffuse reflectance spectra and (c) schematic illustration of the band
structure of M0 and M90 samples. (d) Amount of H2 evolution and (e) hydrogen evolution rate of the obtained samples under visible-light irradiation. Adapted with
permission from ref [186]. Copyright 2019 American Chemical Society.

Fig. 31. (a) Schematic illustration of the bottom-up supramolecular self-assembly route for synthesizing 3D g-C3N4 NS. (b) SEM image, (c) TEM image (HRTEM
image inset) and (d) AFM image of 3D g-C3N4 NS. (e) and (f) are separately the time-dependent overall water splitting activity and repeated cycles of overall water
splitting over 3D g-C3N4 NS. Adapted with permission from ref [187]. Copyright 2019 Elsevier.

photocatalyst. Morphology and structure manipulation plays important insufficient surface catalytic sites, slow surface reaction rate and serious
role in improving the light absorption ability and facilitating the expo­ adverse reaction. The introduction of co-catalysts plays crucial roles in
sure of active sites. Loose and porous 3D structure is in the most ex­ driving the mentioned problems. Co-catalyst itself is inert in photo­
pected because it not only provides sufficient active sites for catalytic reaction, but it has positive effects on suppressing charge
photocatalytic reaction, but also benefits to the harvest of incident light recombination, increasing reactive active sites and alleviating catalyst
through the multiple reflections scattering of light in the porous photo corrosion after coupling with semiconductor catalysts. In some
structure. cases, the co-catalyst can even activate the reactant molecules, thereby
reducing the activation energy and improving the surface REDOX re­
7. Exogenous modification of g-C3N4 action kinetics, which effectively improves the photocatalytic reaction
efficiency [211–214].
7.1. Co-catalyst decoration Up to now, the commonly used co-catalysts includes metal-based co-
catalysts and metal-free co-catalyst. Metal nanoparticles are the most
Despite many self-modification methods have been made in commonly used co-catalysts in photocatalytic reactions. As shown in
improving the intrinsic properties of pure g-C3N4, the PHE activity of Fig. 37a and b, the formation of Schottky barrier between metal co-
single g-C3N4 is still limited by the serious charge carrier recombination, catalysts and g-C3N4 is the fundamental reason for the improvement

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Fig. 32. The fabrication of PCN by hard template method. (a) Schematic diagram of the preparation process for DMCN samples. Adapted with permission from ref
[197]. Copyright 2019 Royal Society of Chemistry. (b) Scheme for preparation of porous 2D graphite-phase polymeric carbon nitride (pGPPCN) using CaCO3 particles
as the template. Adapted with permission from ref [205]. Copyright 2015 Royal Society of Chemistry. (c) Schematic illustration of the synthesis of porous g-C3N4 via
using CNT as hard template. Adapted with permission from ref [206]. Copyright 2019 Wiley-VCH. (d) schematic diagram of the synthetic route of heterogeneous
TiO2/g-C3N4 with a layered mosaic stack structure. Adapted with permission from ref [207]. Copyright 2021 Elsevier. (e, f) TEM images of the porous g-C3N4.
Adapted with permission from ref [118,198]. Copyright 2021 Elsevier.

Fig. 33. The preparation of PCN by sing soft template method. (a)Schematic for the formation of porous sulfur-mediated g-C3N4. Adapted with permission from ref
[208]. Copyright 2015 Royal Society of Chemistry. (b) Schematic illustration for the formation of the hollow worm-like graphitic carbon nitride. Adapted with
permission from ref [118]. Copyright 2021 Elsevier.

of H2 generation efficiency [215–217]. Due to the difference of Fermi been studied as the alternative co-catalysts. Different from noble
level, a built-in electric field formed between metal co-catalyst and g- metallic co-catalysts, these noble- metal-free co-catalysts trap the elec­
C3N4, which provides strong drive force to facilitate the efficient sepa­ trons from g-C3N4 through the formation of band alignment with g-
ration of electron-hole pairs and inhibits the backflow of photogenerated C3N4. As displayed in Fig. 36d and e, the narrow band gap semi­
electrons from co-catalyst to g-C3N4, thus improving the utilization ef­ conducting co-catalysts harvest electrons from g-C3N4 thereby acceler­
ficiency of charge carriers. It is remarkable that, some noble metals, such ating the charge carrier separation. Yuan et al. [235] decorated ultra-
as Au [218–220] and Ag [221–223], have special Surface Plasmon thin g-C3N4 NSs with MoS2 co-catalyst, which displayed more excel­
Resonance (SPR) effect, which further promotes the utilization of elec­ lent HER performance than the decoration of 3 wt.%Pt. Tong et al. [236]
trons thorough the hot electron injection procedure (Fig. 36c). Many modified g-C3N4 NSs with graphene oxide as co-catalyst and found that
noble metal and noble metal-based co-catalysts, such as PtS [224] and the introduction of graphene oxide co-catalyst significantly improved
RhxP [225], are utilized as co-catalysts in improving the HER of single g- the photocatalytic performance of pure g-C3N4. Zhang et al. [234]
C3N4. However, from the point of sustainable development, the limited modified S doped g-C3N4 with CoS2 co-catalyst and obtained favorable
storage and high cost of precious-metal-based cocatalysts restrict their noble-metal-free photocatalytic activity for H2 evolution under visible-
large-scale application. light irradiation (11.55 μmol/h), which was around 578 times that of
In recent years, the inexpensive and earth abundant elements such as pure g-C3N4 (Fig. 37a). Co-S bonding between CoS2 and S-doped g-C3N4
NiP [226], FeCu [227], and some compounds including metal hydrox­ strengthen the directed transfer of photo-generated electrons from S-
ides [228], metal phosphides [229], metal oxides [230,231], metal doped g-C3N4 to CoS2 and contributes to the generation of hydrogen
borides [232], metal carbides [214], and metal sulfides [233–236] have (Fig. 37b and c).

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 34. (a) Schematic illustration of preparing PUOCNs. (b) and (c) are the typical TEM images with different magnifications of the PUOCNs. Adapted with
permission from ref [192]. Copyright 2015 Elsevier.

Except for the inert property of co-catalyst, the morphology and insufficient contact between co-catalyst and catalyst caused by the
structure of co-catalyst also effect strongly on the photocatalytic activity improper fabrication method is a headache trouble that limited the
of g-C3N4. Fu et al. [167] decorated g-C3N4 with hollow cobalt sulfide separation of charge carriers, defects engineering and in-situ growth
(CoSx) polyhedrons derived from ZIF-67 metal–organic frameworks as a method may provide efficient paths in forming intimate contact between
co-catalyst. The obtained CoSx/g-C3N4 composites showed 52 times co-catalyst and g-C3N4.
higher H2 evolution ability than that of pure g-C3N4 (Fig. 38a to e). Due
to the difference in Fermi level between g-C3N4 and CoSx, the photo­
7.2. Heterostructure catalysts
generated electrons in the CB of g-C3N4 will transfer to the surface of
CoSx, the CoSx with zero-approaching adsorption free energies of H2 acts
In a single g-C3N4 photocatalyst, the photogenerated electrons in the
as H2 generation active sites and reduces H+ to H2 (Fig. 38f). At the same
CB are easily return back to the VB and recombined with hole, which is
time, the excellent improved photocatalytic performance can be
quite harmful to the photocatalytic reaction. Constructing hetero­
ascribed to that ①the polyhedral morphology provides more surface
structures by coupling g-C3N4 with other energy band matched semi­
active sites for H2 generation, ② the hollow structure favors mass
conductors is an attractive strategy in the development of high active
diffusion and enhancing the utilization of solar energy, ③ the possible
photocatalysts [241–247]. The suitable energy band position and special
photothermal effect in the hollow black-colored CoSx raises the surface
flexible structure make g-C3N4 a superior mate for the construction of
temperature and beneficial for the mass diffusion/transfer and H2
semiconductor heterojunctions with matched band structure and
adsorption (Fig. 38g).
controllable interface contact. The fundamental reason for the remark­
For co-catalyst, small size and high distribution are expected to
able improved photocatalytic performance of heterojunction is the
obtain high active sites and thus to accelerate the surface reaction. With
complementary advantage between different semiconductors, which
the development of modern synthesis technology, the size of metal
usually lead to the extended light absorption, increased active site,
nanoparticles is gradually reduced even to the single atom scale
accelerated charge carrier separation, and improved photo stability
[237–241]. Due to the unique unsaturated coordination environment,
[15,195,248–250]. When combined with other semiconductors, the in­
the loading of single atomic co-catalyst can improve the intrinsic activity
ternal electric field formed at the interface can effectively promote the
of catalytic sites [238], maximum the utilization rate of metal atoms and
exciton dissociation in g-C3N4, accelerate the separation of photo­
greatly increase the reactive active sites. At the same time, the N-rich
generated charge carriers, and thus improve the efficiency of the pho­
nature and the good coordination ability between N atoms and metal
tocatalytic system. In addition, the introduction of g-C3N4 may also
atoms make g-C3N4 an ideal carrier for the preparation of single atomic
inhibit the photo corrosion of other semiconductors, such as CdS, and
co-catalysts with high loading capacity and high stability, which pro­
improve the stability of photocatalytic systems. Obviously, the forma­
vides new opportunity for the development of high activity photo­
tion of heterostructure dramatically broadens the types of semi­
catalytic system. For example, Chen et al. [239] loaded single atomic Pt
conductor catalysts available for photocatalysis, and significantly
co-catalyst on the surface of g-C3N4, Jiang et al. [240] fabricated Ag
expands the space for improving the photocatalytic performance of
monoatomic co-catalyst by using g-C3N4 as the support through the C-N
semiconductors compared with the self-modification strategies.
co-coordination, which achieved efficient photocatalytic hydrogen
Energy band structure design and the interface structure control are
production by reducing the excitation charge transport energy barrier.
two crucial factors that affect serious on the performance of hetero­
Different from the self-modification strategy, the loading of co-
structure photocatalysts: the band matching relationship between two
catalysts provides extra active sites on the surface of g-C3N4, the for­
semiconductors determines the charge carrier transfer mechanism and
mation of interface electronic field between g-C3N4 and co-catalysts
REDOX capacity of a heterostructure, the directional transfer and rapid
accelerates the migration of photogenerated electrons from the surface
separation of charge carriers, as well as the thermodynamic re­
of g-C3N4 to the co-catalyst and thus benefiting to the separation of
quirements of the target reaction can be met through constructing het­
charge carriers. The enhancement effect of co-catalyst on the PHE per­
erojunctions with matched energy bands. At the same time, the interface
formance of g-C3N4 is influenced by many factors, such as the size,
quality of heterojunction has important influence on the transfer ability
dispersity and deposition amount of co-catalyst, optimizing the structure
and separation efficiency of charge carriers, it is an efficient strategy to
of co-catalyst and controlling the deposition amount of co-catalyst have
facilitate the charge carrier migration and improve the photocatalytic
positive significance in obtaining higher PHE active. In addition, the
efficiency through improving the interface contact quality between

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 35. (a) Synthetic route illustration for CN-UNS, (b) and (c) TEM images for CN-UNS, (d) Photocatalytic H2-evolution activities and (e) AQYs at different
wavelengths and UV–vis spectrum for CN-UNS, (f) schematic illustration of enhanced photocatalytic performance by the synergistic effect of the ultrathin and porous
features and N vacancy. Adapted with permission from ref [193]. Copyright 2021 Elsevier.

semiconductors [251–256]. into g-C3N4 to change the band energy position of g-C3N4. As a result, a
Z-scheme energy transfer pathway formed between the two semi­
7.2.1. Energy band matching principle conductors, thus efficiently facilitating the charge carrier separation and
Due to the moderate energy band position, g-C3N4 can form an en­ achieving high photocatalytic performance with the AQY of 18.2 % at
ergy band matched heterojunction system with most materials, a type I, the wavelength of 420 nm. In addition, suitable electron transfer me­
type II, Z-scheme or S-scheme charge transfer pathway will form on the dium is also crucial in facilitating the interfacial charge transfer between
interface of the semiconductors, which provides main drive force for the semiconductors. Li et al. [258] deposited metal on the interface of g-
effective separation of carriers in space. At the same time, the band C3N4/WO3 heterostructure and studied the effect of metal’s Fermi level
position of the semiconductor should match the REDOX potential of the position on the interfacial charge transfer behaviors. They found that the
target product, so that to provides enough REDOX capacity to drive the Fermi level of Ag is too high while the and the Fermi level of Au is too
photocatalytic reaction. low, neither Ag nor Au fail to drive the photogenerated electrons to
To endows a heterostructure with the most beneficial charge transfer transfer between the two semiconductors. By contrast, the Fermi level of
process, in addition to the selection of semiconductors with suitable Cu located between the Fermi level of WO3 and g-C3N4, thus can transfer
band locations, rationally control and adjust the band structure of g- the photogenerated electrons in the CB of WO3 to the VB of g-C3N4 and
C3N4 and select the electron transfer mediators are commonly used. forming an efficient indirect Z-type carrier transport mechanism.
Taking the couple of g-C3N4 and indium zinc (ZnIn2S4) as example, g- In recent years, with the development of theoretical research,
C3N4 and ZnIn2S4 formed a type I energy band alignment, in order to calculation based on the first principles of density functional theory
improve the photocatalytic ability, Wang et al. [257] introduced defects provides a theoretical model and ground for the design of

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 36. (a) Energy band diagrams of metallic co-catalyst and g-C3N4 before contact, (b) after Schottky contact, (c) coexistence of Schottky barrier and SPR effect
between g-C3N4 and noble metal co-catalyst, (d) energy band diagrams of semiconductor co-catalyst and g-C3N4 before contact, (e) after contact.

heterostructure photocatalysts with matched band structure. Based on reactive molecules [162,254,255,260–264]. For g-C3N4, the construc­
theoretical calculation, Wang et al. [259] proved that combination of g- tion of 2D NS structure is conducive to the sufficient exposure of the
C3N4 and Ag3VO4 can reduce the mixed electron density of C atom and atoms with unsaturated coordination on the surface and is benefit to the
nearby N atom in g-C3N4, thus to induce the transfer of electrons to the exposure of effective reactive active sites. At the same time, the 2D
Ag atom and then to the CB of Ag3VO4, at the same time, the photo­ planar of g-C3N4 provides in situ nucleation and growth sites for the
generated holes transferred from Ag3VO4 to the VB of the g-C3N4 and second semiconductor and thus is benefit to the formation of intimate
form a type II charge transfer pathway and greatly promote the inter­ contacted heterostructure catalyst. In addition, it is also feasible to the
facial charge transfer and improve the photocatalytic activity. With the introduce microporous structures on the surface of g-C3N4 by secondary
high-speed development of the theoretical calculation, the understand­ treatment, which can create new active edges and increase the reactive
ing to the band structure relationship of composites is improving, which active sites and thus to further improve the photocatalytic performance.
will further promote the design of energy band matched heterojunction
system and the rapid development of controllable preparation methods. 7.2.3. Interface optimality principle

7.2.2. Surface optimality principle 7.2.3.1. The formation of intimate contacted interface. As was
For heterostructure photocatalyst, semiconductor surface is the mentioned, the interface between semiconductor is the main place for
dominant site for the photocatalytic while the separation and transfer of the separation and transfer of charge carriers, thus, it is necessary to
photogenerated charge carriers mainly occur at the interface of heter­ strengthen the bonding between different materials as much as possible
ostructure. Hence, the microstructure of semiconductor surface and to reduce the interfacial resistance of carrier transport. The contact
interface will directly affect the transfer and reaction efficiency of tightness can be improved by regulating the formation mode of the
charge carriers, and eventually significantly affect the photocatalytic contact interface, for example, the in situ epitaxial growth method can
performance. Considering the key roles of the surface/interface struc­ be used to form a tight chemical bond between g-C3N4 and other pho­
ture of heterostructures in the photocatalytic reaction process, the tocatalysts for efficient carrier transport. Another commonly adopt
design of heterostructure photocatalyst should base on the optimization strategy is to form heterogeneous structures based on the Van der Waals
of the surface/interface structure to maximize the utilization efficiency forces between g-C3N4 and other semiconductors. This kind of combi­
of charge carriers. nation can get rid of the restriction of lattice matching requirements,
In order to optimize the surface structure of heterogeneous catalyst, achieve tight electronic coupling at the interface, reduce the charge
the thickness and morphology of the semiconductors should be transfer barrier, and thus greatly improve the transfer rate of charge
controlled to meet the requirements of light transmission depth and carriers. For example, Zhu et al. [260] constructed the phosphoene/g-
avoid the shielding effect when forming heterogeneous structures. At the C3N4 Van der Waals heterojunction through a ball milling method, the
same time, researchers should give priority consider to the exposure of tight and stable contact interface formed between the two semi­
the highly reaction active surface to ensure the sufficient contact be­ conductors facilitates the efficient charge separation and transfer. In
tween the active sites and the reaction substrate, thus to improve the addition, high quality heterojunction interfaces can be constructed by
probability of surface photocatalytic reaction. In addition, the surface selecting two semiconductor materials with similar interface properties.
crystal structure should be benefit to the adsorption and activation of For example, g-C3N4 is easy to form intimate contact with organic

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 37. (a) UV–vis spectra for CN, CN-HTS, CN-3CoS2 and CoS2, (b) visible-driven photocatalytic H2-evolved rates for the samples, (c) Illustration of the mechanism
about enhanced photocatalytic ability for CoS2/S-doped g-C3N4. Adapted with permission from ref [234]. Copyright 2020 Elsevier.

semiconductors or carbon-based materials with similar π-π conjugate efficiency, at the same time, the hollow structure not only conducive to
structure through intermolecular interaction. Chen et al. [252] mass diffusion and transfer, but also can cause multiple light reflection
confirmed that the π-π interaction formed between amorphous poly­ in the cavity to improve the utilization efficiency of solar spectrum
fluorene materials (PFs) and g-C3N4 contributes to the effective transfer [247,265–268]. In addition, as a hot research direction in recent years,
of photogenerated charge carriers. Specially, the construction of ho­ 2D to 2D (2D/2D) heterostructures can make full use of the structural
mogeneous junction between two different structures of g-C3N4 was also advantages of g-C3N4 to maximize the interface contact area [269–272].
reported to be efficient in obtained excellent photocatalytic activity due Meanwhile, planar structures greatly shorten the distance of photo­
to the intimate contacted interface and the rapid charge transfer in the generated charge carriers migrating from the inside of the material to
homojunction interface. the space charge region near the interface or the surface reaction sites.
Jiang et al. [273] reported that 2D-2D hexagonal boron nitride (H-BN)/
7.2.3.2. Improve the interface contact area. Another principle in opti­ g-C3N4 heterojunction photocatalyst. The ultrathin heterostructure not
mizing heterojunction interface is to maximize the interface contact as only improved the charge transfer efficiency, but also exposed more
much as possible, thus to provide a rich transmission channel for the fast active sites, thus greatly improving the photocatalytic performance.
interfacial transfer of charge carriers. The lowest efficiency hetero­
structure is the “hybrid” formed by the simple mixing of different 7.3. Category of g-C3N4-based heterostructure
semiconductors, the point contacted interface in the simple mixed
hybrid usually resulting in limited effective interface contact area and Generally, the relative energy band structure and electron transfer
low efficiency of interfacial charge separation. In contrast, “core–shell” pathway is the most considered factor in the construction of hetero­
heterostructure has a larger effective contact area, but it is crucial to structure. The current studied g-C3N4-based heterostructures can be
take the effective excitation of “core” semiconductor into consideration classified into g-C3N4/semiconductor heterojunctions, g-C3N4/metal
because one semiconductor is completely coated by another one. At the heterojunctions, g-C3N4/carbon heterojunctions, g-C3N4/MOF hetero­
same time, the sufficient exposure of high active surface in the “core–­ junctions, and the special g-C3N4/g-C3N4 homojunctions according to
shell” structure is also important in achieving high utilization efficiency the property of the second materials. As the C3N4/metal heterojunctions
of the charge carriers [261–264]. The hollow “core–shell” hetero­ have been discussed in the chapter of metal co-catalyst modified g-C3N4,
structure provides a solution to the problems existing in the coated we will emphatically introduce the other mentioned heterojunction
heterojunction: the intimate contacted interface between hollow core catalysts in this chapter.
and the shell layer guaranteed a high charge carrier separation

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 38. (a) Schematic illustration for the fabrication of CoSx/g-C3N4 composites. (b)TEM images of hollow CoSx polyhedrons. (b) (c) and (d) are separately the TEM
images of hollow CoSx, g-C3N4 NSs and the 2 % CoSx/g-C3N4 composite, (e) Photocatalytic H2 generation rate of g-C3N4 and CoSx/g-C3N4 composites with different
CoSx contents (1–10 %) under visible light (λ ≥ 400 nm) irradiation, (f) Possible mechanism for photocatalytic H2 evolution over CoSx/g-C3N4 composite photo­
catalyst. (g) Schemes of light path and photothermal effect in the hollow CoSx polyhedron. Adapted with permission from ref [167]. Copyright 2018 American
Chemical Society.

7.3.1. g-C3N4/semiconductor heterostructures consideration in choosing the second semiconductor for constructing g-
When two semiconductors with different band structures are closely C3N4-based heterojunction. Commonly, type I, type II, Z-scheme and S-
contacted, an internal electric field formed at the interface between scheme heterojunctions can be formed according to the transfer mech­
semiconductors will drive the directional movement of photogenerated anism of photogenerated carriers between semiconductors.
electrons and holes. Matched energy band structure is the key

Fig. 39. Schematic diagram of charge transfer for (a) type I (b) and (c) type II, (d) direct Z-scheme, (e) indirect Z-scheme, (f) S-scheme heterojunction systems. (“PS”
is the abbreviation of “photocatalysts”.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

7.3.1.1. Type I and type II heterostructure. As shown in Fig. 39a, type I fabrication method contributes to the formation of highly intimate
heterojunction featured with a nested band structure between semi­ contact interface. Due to the expanded light absorption caused by C
conductors, the valence band and conduction band of the narrow doping and the accelerated charge transfer between TiO2 and g-C3N4
bandgap material are located in the gap band of the wide bandgap semiconductors, the obtained hybrid displayed 23 times and 10 times
material. Under light, photogenerated electrons and holes respectively higher H2 evolution ability than that of TiO2 and g-C3N4 separately.
transferred from the wide band semiconductor to the narrow band Narrow band gap semiconductor CdS (2.4 eV) has excellent light
semiconductor. Due to the different transfer rates of photogenerated absorption ability, but the serious photo-corrosion results in quickly
electrons and holes, the recombination of photogenerated charge car­ declined photocatalytic performance, Li et al. [276] fabricated CdS/g-
riers can be efficiently suppressed. Type II heterojunction is the most C3N4 hybrids by using an in-situ hydrothermal method, it was found that
widely used in the construction of hetero photocatalysts, in which the the combination of CdS and g-C3N4 efficiently broaden the light ab­
two semiconductors displayed interlaced energy band positions (as sorption of g-C3N4 and about 10 wt% location of CdS lead to the H2
shown in Fig. 39b and c), photogenerated electrons and holes separately evolution rate 21 times greater than single g-C3N4 and 4 times greater
transferred along different direction and finally aggregated on different than that of pure CdS. Liu [277] revealed the structure and electron
semiconductors to drive the reduction and oxidation reactions, respec­ transfer mechanism in the CdS/g-C3N4 by using the DFT study. Based on
tively. In the practical experiment, most studied type II heterojunction the Bader charge analysis for the charge densities of the sample, it can be
follow the diagram shown in Fig. 39b because the g-C3N4 occupied a found from Fig. 40a that the electrons transferred from g-C3N4 to CdS
relative negative band position. Table 3 listed some reported g-C3N4- across the interface, whereas the holes remained in the g-C3N4. The
based type I and type II heterojunction systems. accumulation of net charge resulted in the formation of a built-in in­
Due to the facile fabrication procedure and matched energy band ternal electric field at the interface, which was benefit to the separation
structure, the heterostructures constructed by TiO2 and g-C3N4 are the of charge carriers. At the same time, it was observed from Fig. 39b that
most widely studied catalyst. Our group has carried out a lot of re­ the Fermi energy of g-C3N4 (− 4.34 eV vs AVS) was higher than that of
searches on the construction of g-C3N4-based heterojunction catalysts. CdS (− 5.04 eV vs AVS), When the two semiconductors combined
For example, we reported the fabrication of C-TiO2@g-C3N4 core@shell together, the photogenerated electrons in g-C3N4 would transfer towards
heterostructure by using an in-situ strategy [275], the adoption of in-situ CdS and form a g-C3N4-CdS direction internal electric field. Under the

Table 3
Comparison of H2 evolution ability over the g-C3N4-based type II, Z-scheme and S-scheme heterostructures reported in past few years.
Catalyst catalyst mass of Reaction solution Co- Light source R (H2) R (H2) of pure g-C3N4 Ref. (year)
type catalyst catalyst (μmol/g/ (μmol/g/h)
(mg) h)

Type II TiO2/holey g-C3N4 10 80 mL H2O and 20 mL 1 wt% Pt 300 W Xe lamp, >420 35.4 2.5 [378]
methanol nm (2021)
3 3
ZnIn2S4/g-C3N4 50 80 mL H2O and 20 mL 3 wt% Pt 300 W Xe lamp, >420 160.7 x10 26.6 x10 [379]
TEOA nm (2021)
g-C3N4 /CoAl LDH 50 90 mL H2O and 10 mL N/A 300 W Xe lamp, >420 34 trace [380]
TEOA nm (2020)
K7HNb6O19/g- 50 40 mL H2O and 10 mL without 300 W Xe lamp 359.89 9.05 [381]
C3N4 methanol (2022)
CeO2/g-C3N4 5 40 mL H2O and 10 mL N/A 300 W Xe lamp,>400 nm 229.75 N/A [382]
TEOA (2022)
g-C3N4 /ZnIn2S4 25 40 mL H2O and 10 mL 1 wt% Pt 300 W Xe lamp, >420 20,738 8447 [383]
TEOA nm (2022)
TiO2/g-C3N4 75 67.5 mL H2O and 7.5 mL 3 wt% Pt 250 W visible light 1041.6 182.2 [384]
TEOA (2020)
Z-scheme CoSeO3/g-C3N4 20 90 mL H2O and 10 mL N/A 300 W Xe lamp 1459.2 22.3 [385]
TEOA (2022)
CoS/g-C3N4 100 85 mL H2O and 15 mL 5 wt% NiS 300 W Xe lamp 1.93 trace [386]
TEOA (2022)
g-C3N4 /rGO/ 20 45 mL H2O and 5 mL N/A 300 W xenon arc lamp, 869.8 8.1 [387]
FeOOH TEOA 400–800 nm (2021)
B doped g-C3N4 50 90 mL H2O and 10 mL 1 wt% Pt 300 W Xe lamp, >300 32.94 N/A [122]
/g-C3N4 TEOA nm (2021)
g LaNiO3/g-C3N4 10 80 mL H2O and 20 mL N/A 300 W Xe lamp, >420 312.763 7.129 [170]
methanol nm (2021)
g-C3N4 /WO3 50 40 mL H2O and 10 mL 1 wt% Pt 300 W Xe lamp, >420 862 326 [221]
TEOA nm (2019)
g-C3N4 /ZnO/Au 30 80 mL H2O and 20 mL without 300 W Xe lamp, >420 158.5832 6.11886 [279]
methanol nm (2023)
3
TiO2/rGO/g-C3N4 5 16 mL H2O and 4 mL N/A 300 W Xe lamp 32 x10 0.345 x103 [285]
glycerol (2020)
g-C3N4 /Cu/MoS2 20 80 mL H2O and 20 mL N/A 300 W Xe lamp, >420 971.5 44 [287]
TEOA nm (2022)
S-scheme CdS/g-C3N4 5 0.25 M Na2S-Na2SO3 N/A 300 W Xe lamp, >420 15.3 0.005 [302]
nm (2020)
g-C3N4 /g-C3N4 10 90 mL H2O and 10 mL 3 wt% Pt 300 W Xe lamp, >420 5548.1 111.5 [343]
TEOA nm (2022)
WO3/g-C3N4 N/A 20 % of lactic acid 2 wt% Pt Full spectrum 982 583 [299]
(2019)
N-MoS3/S-g-C3N4 50 90 mL H2O and 10 mL N/A 300 W Xe lamp 658.5 28.8 [296]
TEOA (2021)
Bi2S3/g-C3N4 10 0.35 M of Na2S and 0.25 N/A 300 W Xe lamp 3394.1 1298.4 [243]
M of Na2SO3 (2021)

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

photogenerated carriers, this effect is at the cost of reducing the REDOX


capacity of carriers. It’s a challenge to achieve the efficient separation
while maintaining the high REDOX abilities of charge carriers. As a
positive result of human learning about the natural process of photo­
synthesis, scientists have proposed a Z-scheme heterojunction system
recently, in which charge carriers can be efficiently separated without
the decline of REDOX abilities. As shown in Fig. 39d and f, the Z-scheme
system consisted of two semiconductors with interlocked band struc­
ture, the photogenerated electrons on the lower CB of photocatalyst I (PS
I) can transfer and recombined with the holes on the high VB of pho­
tocatalyst II (PS II), while the electrons with more reduction ability in
the CB of PS II and the holes with more oxidizing ability in the VB of PS I
are retained and participate in the photocatalytic reaction. Tan et al.
[283] constructed Z-scheme heterojunction by combining 2D ZnIn2S4
with g-C3N4 through an in-situ growth strategy, by the means of
morphology control, interfacial regulation, and energy band matching,
the obtained 2D/2D ZnIn2S4/g-C3N4 heterostructure displayed an
enviable photocatalytic hydrogen production rate of 14.799 mmol/g/h,
which is obviously better than that of bare ZIS and CN.
Due to the similar energy band alignment, there is often coexistence
and competition between type-II and Z-scheme charge-transfer path­
ways in a semiconductor–semiconductor heterojunction. Therefore,
some noble metals such as Au [284,285] and Ag [286,287], non-noble
metals such as Cu [288], and other materials such as metallic MoS2
[289,290], carbon dots [291], as well as graphene oxide [292], has been
utilized as electron transfer media to promoting the transfer of charge
carriers between semiconductors to guarantee the formation of Z-
scheme (Fig. 39e). Focus on the formation of Z-scheme charge transfer
mechanism between semiconductors, our group introduced Au nano­
particles into the interface of g-C3N4 and C doped TiO2 [289]. As shown
in Fig. 41, compared with the C-TiO2@g-C3N4 core–shell structure
hybrid, the introduced Au nanoparticles resulted in a dramatically
improved PHE active, which was more than 40 times higher than that of
g-C3N4. The reactive intermediate species trapping and superoxide
radical quantification experiments revealed that the introduced Au
nanoparticles played crucial role in improving the photocatalytic per­
formance of the system, which worked as electron transfer bridge to
induce the change of charge transfer pathway from type II to the Z-
scheme procedure, thus facilitating the separation of charge carriers and
significantly improving the REDOX ability of electrons and holes
(Fig. 41d and e).
Fig. 40. (a) Planar-averaged electron density difference for g-C3N4/CdS, the Zhu et al. [293] constructed g-C3N4/Cu/MoS2 Z-scheme hetero­
cyan and yellow areas indicate electron depletion and accumulation, respec­ junction by a two-step calcination method (Fig. 42a), in which Cu
tively, (b) diagram of the band edge positions before and after contact of g-C3N4 nanoparticles are embedded between g-C3N4 and MoS2. Through the
and CdS. Adapted with permission from ref [275]. Copyright 2015 American detection of reactive intermediate, it was revealed that the Cu nano­
Chemical Society. particles acted as electron media to construct the electron transfer be­
tween two semiconductors and form a Z-scheme charge transfer
irradiation of simulated sunlight, the photogenerated electrons would pathway. Feng et al. [294] constructed the Z-scheme CdS/g-C3N4 het­
transfer from the CB of CdS to g-C3N4 under the drive force of internal erostructure by introducing carbon quantum dots between the two
electric field and thus forming the type II energy transfer process. semiconductors as electron transfer media (Fig. 42b). Chen and co­
Some multi-component metal compounds, such as bismuth tungstate workers [292] constructed g-C3N4/CQDs/InVO4 Z-scheme hetero­
(BiWO6) [276], bismuth chloride oxide (BiOCl) [277,278], indium zinc junction by using carbon quantum dots as electron mediator (Fig. 42c).
sulfide (ZnIn2S4) [279,280], strontium titanate (SrTiO3) [281,282] and It was found that the carbon quantum dots located between g-C3N4/
so on, have unique advantages such as variable composition and rich CQDs/InVO4 not only behave as mediator between InVO4 and g-C3N4 to
spatial structure, which provides the possibility of flexible regulation of promote the efficient separation of charge carriers via the Z-scheme
heterojunction band configuration and surface interface. Yin et al. [278] pathway, but also greatly improve the light response ability of the
fabricated g-C3N4/BiOCl heterojunction by dispersing g-C3N4 on the photocatalyst, thus significantly enhanced photocatalytic activity of the
surface of BiOCl microspheres, the formed p-n junction was responsible catalyst. Z-scheme heterojunction greatly promote the separation of
for the improved separation efficiency of photogenerated electron-hole photogenerated electron-hole and maintain the REDOX ability of pho­
pairs, and thus the higher photocatalytic activity. togenerated carriers, thus has become an important direction in the
development of hetero photocatalysts in recent years.
7.3.1.2. Z-scheme heterostructure. For photocatalytic reaction, the pho­ Apart from noble metals, some non-noble metallic materials are also
togenerated electrons are expected to located in more negative CB po­ used as charge bridge to construct Z-scheme heterojunction. Wu et al.
sition while the holes are expected to located in more positive VB [295] introduced non-precious metal bismuth (Bi) between Bi2MoO6
position, thus to obtain higher photocatalytic performance. Although and g-C3N4 as a bridge for charge transport and constructed a Z-scheme
type I and type II heterojunctions can suppress the recombination of heterojunction, which extremely expanded the absorption ability of the

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 41. (a) Schematic illustration of the preparation of C-TiO2@g-C3N4, (b) TEM image of the sample, (c) The average H2 production rates of C-TiO2, g-C3N4, TCN,
ACN, and TACN-x, (d) and (e) are the charge transfer mechanism in C-TiO2@g-C3N4 and C-TiO2@Au@g-C3N4 systems. Adapted with permission from ref [274],
copyright 2017 Elsevier and ref [289], copyright 2017 Wiley-VCH.

catalyst and resulted in rapid separation of photogenerated carriers. In work function spontaneously migrate to the semiconductor with higher
addition, carbon-based materials such as graphene have good electrical work function until the equilibrium of Fermi level and thus form a local
conductivity and can form a larger contact area with semiconductor built-in electric field. Driven by the built-in electric field, the electrons in
components than metal particles, which is conducive to rapid charge the CB with lower reduction ability and holes in the VB of lower
transfer and is also commonly used as charge transport medium in g- oxidation ability recombine under the action of Coulomb force while the
C3N4 heterojunctions. For example, Jo et al. [295] constructed a Z- electrons and holes with higher REDOX ability are maintained
scheme CdS/g-C3N4 heterojunction using Reduced Graphene Oxide [12,306,307].
(rGO) as the conductive mediator. Compared with the samples without Many heterojunctions have successful constructed S-scheme system,
rGO, this catalyst had a significantly increased photocurrent response. It Zhang et al. [304] constructed S-scheme heterojunction between BiOBr
is proved that rGO can effectively promote the separation and trans­ and g-C3N4, Jiang et al. [306] reported the formation of S-scheme en­
mission of photogenerated carriers as a charge transport medium, so as ergy transfer pathway between sulfur-doped g-C3N4 and g-C3N4. Li et al.
to improve the utilization efficiency of carriers. Moreover, Fe3O4 with [307] reported the formation of S-scheme charge transfer procedure
variable valence of Fe2+/Fe3+ has also been proved to be available in between Bi2MoO6 and g-C3N4. The formed S-scheme heterojunction
promoting the charge carriers between CdS and g-C3N4 to construct Z- have been proven to be efficient in obtaining high H2 evolution per­
scheme heterojunction [297]. formance. Ren and coworkers [308] fabricated S-scheme heterojunction
through in situ hydrothermal growth of 2D CdS NSs on g-C3N4. Fu and
7.3.1.3 S-scheme heterostructure. Recently, some researchers point out coworkers [305] combined WO3 ultra-thin NSs with 2D g-C3N4 NSs and
that although Z-scheme heterojunction benefit to the charge separation, constructed a WO3/g-C3N4 heterostructure. The H2 evolution rate
the accurate charge transfer mechanism is still controversial [298–300]. increased from 583 μmol/g/h of pure g-C3N4 NSs to 982 μmol/g/h when
The proposal of step scheme (S-scheme) charge transfer mechanism 15 % of WO3 was loaded (Fig. 43a). Considering WO3 itself is inert in
have been a new research hotpot, in which the difference in the Femi photocatalytic reaction, the excellent improved H2 evolution ability can
level between semiconductors provide dominant drive force for the be ascribed to the formation of heterojunction between WO3 and g-C3N4.
transfer of charge carriers [301–305]. When two different semi­ The detection of active intermediate was carried out to reveal the charge
conductor combined, electrons on the semiconductor with a smaller transfer pathway in the hetero interface. As shown in Fig. 43b, according

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 42. (a) Synthetic illustration of CN-Cu-MS composites. Adapted with permission from ref [293]. Copyright by 2022 Wiley-VCH. (b) energy band diagram of the
Z-scheme electron transfer (CdS/CQDs/g-C3N4) mechanism. Adapted with permission from ref [294]. Copyright by 2019 Elsevier. (c) efficiency of RhB degradation
in the presence of various scavengers (left) and possible photocatalytic mechanisms of Z-scheme heterojunction CV20/CQDs2 under visible-light irradiation (right).
Adapted with permission from ref [292]. Copyright by 2021 Wiley-VCH.

to the energy band position, the ⋅O–2 can only generated by the electrons energy, while the band edge of WO3 bends downward due to the accu­
on the CB of g-C3N4 while the ⋅OH can only formed through the oxida­ mulation of electrons. Under light irradiation, under the multi-drive
tion reaction by the holes on the VB of WO3. electron paramagnetic force of internal electric field, band edge bending and Coulomb inter­
resonance (EPR) measurements were utilized to detect ⋅O–2 and ⋅OH action, some electrons from the CB of WO3 recombined with the holes on
generated in the system and the results were shown in Fig. 43c and d. As the VB of g-C3N4, at the same time, the corresponding electrons on the
was observed, the DMPO-⋅OH signal was obviously over WO3 NSs and CB of g-C3N4 and the holes on the VB of WO3 were retained, thus formed
15 %WO3/g-C3N4, while no DMPO-⋅OH signal is observed for pure g- a S-scheme charge transfer procedure and extremely accelerated the
C3N4, suggesting that the photogenerated holes still stay in the VB of generation of H2.
WO3. Similarly, the strong DMPO-⋅O–2 signal detected over g-C3N4 and Chen et al. [302] constructed S-scheme heterojunction of S-doped g-
15 % WO3/g-C3N4 composite indicates that the photogenerated elec­ C3N4 (SCN) and N-doped MoS2 (NMS) by a one-step thermal poly­
trons are present in the CB of g-C3N4.Therefore, the charge transfer condensation method, the formation of imitate contacted hetero­
pathway on the hetero-interface can be explained by using a S-scheme structure can be confirmed from the TEM and HRTEM images in
mechanism. As shown in Fig. 43e, when g-C3N4 and WO3 are close to Fig. 44a. The as-prepared NMS/SCN with an NMS ratio of 19.3 wt%
each other, an internal electric field is formed at the interface due to the showed the highest H2 generation rate of 658.5 μmol/g/h, which was
difference in work function, the electrons transfer from g-C3N4 to WO3 to about 23 and 38 times higher than that of pure SCN (28.8 μmol/g/h) and
equilibrate the work function and result in an upward bends of the NMS (17.4 μmol/g/h), respectively (Fig. 44b). In Surface photovoltage

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 43. (a) Comparison of H2-generation activities of as-prepared samples under xenon lamp irradiation, (b) band structures of g-C3N4 and WO3 NSs. (c) and (d) are
separately the EPR spectra of DMPO-•OH in aqueous and DMPO-•O−2 in methanol dispersion in the presence of g-C3N4, WO3 NSs and 15 %WO3/g-C3N4, (e) the work
functions and the S-scheme charge transfer mechanism between WO3 and g-C3N4 under light irradiation. Adapted with permission from ref [305]. Copyright by
2018 Elsevier.

spectrum (SPV) spectra, 19.3 %-NMS/SCN had a stronger photo- photocatalysts. Gogoi et al. [309] reported a ternary heterojunction
response signal than that of pure SCN and NMS (Fig. 44c), meaning catalyst consisted by Cd0.5Zn0.5S, g-C3N4 and MoS2, the as fabricated
that the 19.3 %-NMS/SCN is more likely to promote efficient separation ternary heterostructure has abundant hetero interfaces for the transfer
of light-induced charge carriers. Fig. 44d and e are the calculated Fermi of charge carriers, which greatly inhibit the recombination of photo­
energy of the samples, assuming that the type-II heterojunction was generated electron-hole pairs and result in good photocatalytic
formed, the photo-generated electrons and holes were transferred to the hydrogen production efficiency with the appear quantum yield of 38 %
CB and VB of NMS and SCN, respectively, and H2 would be produced on at 420 nm. Obregon et al. [310] designed and constructed BiPO4/TiO2/
the CB of NMS. However, the CB edge of NMS was too low (− 0.07 eV) to g-C3N4 ternary heterojunction catalyst, and realized the stepwise
provide enough driving force for a H2 evolution reaction. Hence, a S- transfer of photogenerated electrons and holes by using the energy band
scheme charge transfer pathway would form between NMS and SCN. difference of semiconductor (photogenerated electrons transfer along
Based on the formation of heterojunction between two different the direction of g-C3N4→ TiO2→ BiPO4, photogenerated holes transfer
semiconductors, the ternary and multi-component photocatalysts have along the BiPO4→ TiO2→ g-C3N4 direction), which effectively improves
also made great progress in recent years. Compared with the binary the efficiency of carrier separation. Dong et al. [311] constructed the
heterojunction, the multi-component heterostructures are more ZnO/ZnS/g-C3N4 ternary heterojunction catalyst with the “double Z-
complicated in the component, interface structure and the carrier type” carrier transport mechanism, it was reported that the synergistic
transport mechanism, and thus the PHE of the multi-component pho­ effect between the double Z-scheme interfaces significantly promoted
tocatalysts can be further improved by comprehensive integrating and the charge carrier separation and remained good REDOX ability of the
optimizing the properties of different materials. It is to say, the syner­ electrons and holes, thus significantly improved the PHE performance of
gistic effect among different components would be benefit to the light the catalyst.
absorption and the efficient charge separation and fast charge transfer,
thus provides broader space for the construction of high performance

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 44. (a) and (b) are separately the TEM and HRTEM image of 19.3 %-NMS/SCN, (c) EDS element mapping images for C, N, Mo and S, (d) H2 evolution with 4 h of
illumination over the prepared samples, (e) SPV spectra of SCN, NMS and 19.3 %-NMS/SCN, (f) and (g) are separately the electrostatic potentials of SCN (0 0 1)
surface and NMS (0 0 2) surface, (h) is the schematic illustration for the photocatalytic mechanism over NMS/SCN S-scheme heterojunction. Adapted with permission
from ref [302]. Copyright by 2020 Elsevier.

7.3.2. g-C3N4/carbon heterostructure on, have been combined with g-C3N4 to construct the high active pho­
As the most abundant element on Earth, carbon materials have tocatalyst. Chai et al. [313] reported the high photocatalytic system by
attracted great researches in the construction of g-C3N4-based hetero­ decorating g-C3N4 with Fullerene. Li and coworkers [312] investigated
structure due to the merits of excellent conductivity, good stability, low the interface effects of C60/g-C3N4 heterostructures on the electronic
cost, good light absorption ability and various structure. Many carbon properties, charge transfer and light absorption abilities based on the
materials, including C60 [312,313], carbon dots [314,315], graphene first-principles calculations. They confirmed that the type-II band
[316], carbon nanotubes [317–319], amorphous carbon [320], and so alignment was formed between C60 and g-C3N4 provides main drive

Fig. 45. Schematic illustrating the mechanism of charge separation and photocatalytic processes on amorphous carbon/g-C3N4 hybrids under visible light irradi­
ation. Adapted with permission from ref [320]. Copyright by 2017 Elsevier.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

force for the transfer and separation of charge carriers. In addition, the dye-sensitized photocatalytic H2 evolution system. The protonated g-
unsaturated N atoms included in the interfaces of g-C3N4 contributes C3N4 and Co-MOF directionally adsorb Eosin Y (EY) and triethanol­
most in promoting the photocatalytic performance, while the saturated amine (TEOA) molecules through hydrogen bond and complexation
nitrogen atoms lying in the interfaces will weaken the interfacial in­ separately and achieved a whole photocatalytic system. As shown in
teractions between C60 molecules and the g-C3N4 monolayers. Xu at al. Fig. 47a, the successful fabrication of the Sm doped heterostructure can
[320], fabricated the heterostructure by combing g-C3N4 with amor­ be confirmed from the change of color. Based on controlling the cate­
phous carbon, the photogenerated electrons tend to transfer from the CB gory of inorganic protonic acids, the ratio of g-C3N4 to Co-MOF, the
of g-C3N4 to amorphous carbon surface and thus facilitating the efficient doping amount of Sm, as well as the concentration of EY, the H2 evo­
separation of photogenerated electrons and holes in g-C3N4 (Fig. 45). As lution ability of the 2D/2D heterostructure was optimized to be 73.42
a result, the H2 evolution ability of the heterostructure can be increased μmol/h (Fig. 47b to i). It was found that the sensitizer (EY) and the
to 212.8 μmol/h/g, which was about 10 times higher than that of pure g- sacrificial agent (TEOA) were respectively coupled on the reduction site
C3N4. (p-g-C3N4) and the oxidation site (2D Co-MOF) of the system and form
an integral dye-sensitized system, which realized the directional
7.3.3. g-C3N4/MOF heterostructure migration of carriers and made full use of sensitizers and sacrificial
As a kind of important functional materials, metal organic frame agents. In addition, the introduction of Sm in 2D Co-MOF has further
works (MOFs) have also become a promising candidate in the con­ promoted the separation of photogenerated and transfer of electrons
struction of heterostructure with g-C3N4 due to the merits of high spe­ (Fig. 47j).
cific surface area and adjustable pore structure [321–326]. From the Wang et al. [329] fabricated UiO-66/g-C3N4 (UG-x) heterostructure
viewpoint of band structure, the CB of MOFs is consisted of the empty through a thermal annealing process (Fig. 48a), the g-C3N4 was depos­
outer orbitals of metal centers and the VB is mainly contributed by the ited on the surface of UIO-66 and the deposition have no obvious effect
outer orbitals of organic linkers, thus, MOFs can also be excited by the on the morphology of UIO-66 substrate (Fig. 48b to f). The photo­
sunlight to generate electron-hole pairs and played the roles a semi­ catalytic activity of the hybrid can be controlled through the deposition
conductor [327–335]. Pu et al. [330] fabricated 3D g-C3N4/Cu3P/UiO- amount of g-C3N4, the highest H2 evolution was obtained over the UG-50
66 cubic structure by using a hydrothermal method. The fabricated sample of 14.11 × 10− 6 mol/h, which is over 17 times higher than that
heterostructure displayed larger specific surface area of 1002.08 m2/g, of g-C3N4 alone (Fig. 48g).
which was 23 times than that of g-C3N4. Moreover, the H2 evolution In addition, the charge transfer pathway in MOF/g-C3N4 hetero­
activity of the sample was measured to be 79 μmol in 5 h, this can be structures has also been discussed by other researchers [332–335]. In
ascribed to that the MOF provides a large number of active sites and this region, our group fabricated the 2D/2D heterostructure by
surface areas for photocatalytic reaction. Arif et al. [334] combined the combining acidified boron-doped g-C3N4 (HBCNN) and cobalt
g-C3N4-MoS2 heterostructure with ZnM-ZIF (Fig. 46), it was found that porphyrin metal organic frameworks (CoPMOF) together through a self-
the ZnM-ZIFs not only inhibited the aggregation of the g-C3N4-MoS2 assembly strategy [332]. It is found that a coordination connection has
heterostructure, but also improved the separation and transport effi­ formed between CoPMOF and HBCNN through Co-N bond, which forms
ciency of charge carriers, and resulted in 214.4 and 3.7 times higher H2 a pseudo-gap in the up-spin channel of electronic states, establishing an
evolution rate than that of g-C3N4 and g-C3N4-MoS2, respectively. electron-hole separation mechanism (Fig. 49a). The resultant HBCNN/
Zhao et al. [331] combined protonated g-C3N4 (p-g-C3N4) with Co- CoPMOF with optimum ratio exhibits a superior H2 evolution rate of
MOF and introduced the Sm doping to constructed integrated 2D/2D 33.17 mmol/g/h, which is 3.04 and 100.50 times higher than the single

Fig. 46. (a) Scheme illustrating the synthesis of the ternary g-C3N4-MoS2-ZnNi-ZIF heterostructure. TEM images of the (b) g-C3N4, (c) ZnNi-ZIF (inset showing the
SEM image), (d) g-C3N4-MoS2-ZnNi-ZIF, (e) g-C3N4-MoS2, (f) g-C3N4-MoS2-ZnNi-ZIF, and (g) HRTEM image of the g-C3N4-MoS2-ZnNi-ZIF. (h) the photocatalytic
hydrogen production activity of the samples, (i) separation and utilization mechanism of the photogenerated charge carriers in the optimal g-C3N4-MoS2-ZnNi-ZIF.
Adapted with permission from ref [334]. Copyright by 2021 Royal Society of Chemistry.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 47. (a) photos of g-C3N4, p-g-C3N4, 2D Co-MOF, 2D Co-MOF/p-g-C3N4-50 % and 5 % Sm doped. The HER curves of (b) p-g-C3N4 protonated by different
inorganic protonic acids, (c) 2D Co-MOF/p-g-C3N4 with different contents of 2D Co-MOF, (d) composite materials with different Sm doping, (e) composite materials
with unprotonated g-C3N4, (f) composite materials with various rare earth element doping, the photocatalytic HER rates of 5 % Sm doped (g) in the solutions with
different concentration of EY, (h) in the different pH, (i) the photocatalytic stability tests of 5 % Sm doped in 20 h. Photocatalytic mechanism of 5 % Sm doped.
Adapted with permission from ref [331]. Copyright by 2020 Elsevier.

Fig. 48. (a) Schematic illustration of decorating g-C3N4 on UiO-66 octahedrons through annealing process. Increasing the g-C3N4 amount leads to higher coverage of
g-C3N4 on UiO-66 octahedrons. SEM images of (b) UiO-66, (c) UG-10 and (d) UG-50, (e) TEM image of UG-50, (f) EDS pattern of the g-C3N4, Zr signal comes from the
UiO-66, and Cu signal comes from the Cu grid, (g) The histogram showing the H2 production rate over UG- x samples (x = 10, 30, and 50). Adapted with permission
from ref [329]. Copyright by 2015 Wiley-VCH.

HBCNN and CoPMOF, respectively. Based on the detection of active type II energy transfer process between amorphous nickel-imidazole
intermediate, the charge transfer between HBCNN and CoPMOF was MOF (aNi-MOF) and g-C3N4 (Fig. 49c), Zhang et al. [336] reported
confirmed to be a Z-scheme pathway (Fig. 49b), which significantly the multi-sites sensitive photocatalytic mechanism in the MOF-5@g-
facilitates the transfer and separation of photogenerated charge carriers C3N4/NixMo1-xS2 heterostructure (Fig. 49d).
and accelerates the photocatalytic reaction. Rajan et al. [335] reported a

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 49. (a) Synthesis illustration of HBCNN/CoPMOF, (b) Schematic illustration of the possible heterojunction types of CoPMOF and HBCNN, Adapted with
permission from ref [332]. Copyright by 2022 Elsevier. (c) A mechanism for Type II heterojunction formation between aNi-MOF and g-C3N4, Adapted with
permission from ref [335]. Copyright by 2022 Elsevier. (d) Photocatalytic mechanism for H2 production of Nix-Mo1-xS2/MOF-5@g-C3N4 in EY sensitized under
visible light irradiation. Adapted with permission from ref [336]. Copyright by 2018 Elsevier.

7.3.4. g-C3N4-based homostructure by melamine is up to 580 ◦ C, while that by cyanuric acid is 550 ◦ C. Based
The raising of homojunction strategy is attractive in overcoming the on this attempt, they successfully obtained crystalline/non-crystalline
disadvantage of heterojunction in the formation of high-quality inter­ nano-homojunction samples by treating the precursors composed of
face. Composed by the same semiconductor materials, the same element melamine and cyanuric acid at 550 ◦ C. Similarly, by using dicyandia­
composition and similar crystal structure can minimize the lattice mis­ mide and melamine as precursors and treating them at 600 ◦ C and
matches between semiconductors; at the same time, the difference in 720 ◦ C respectively, Li et al. [349] fabricated the DCN (g-C3N4 fabri­
positions of Fermi levels could induce band bending and form a build-in cated from dicyandiamide precursor) and MCN (g-C3N4 fabricated from
electric field to inhibit the recombination and facilitate the separation of melamine precursor) with different energy band structures and thus
photogenerated charge carriers [337–340]. Up to now, many efforts obtaining the DCN/MCN homojunction (Fig. 50c), which displayed
have been devoted in the researches of g-C3N4-based homojunctions, the much higher H2 evolution ability than that of single catalyst due to the
π-π conjugate in triazine ring can be directly affected by the element formation of type II energy transfer pathway at the interface. Moreover,
doping, molecular structure, as well as size and spatial structure of g- the energy band structure of g-C3N4 also varies with their size and
C3N4. Thus, the homostructure can be constructed between the g-C3N4 morphology. Zheng et al. [350] fabricated 0D/1D g-C3N4 homojunction
semiconductors with different element doping, morphology and mo­ through a facile in-situ thermal polymerization process by using the
lecular structures [341–346]. For example, Liao et al. [341] constructed melamine-cyanuric acid supramolecular and urea as co-precursor. As
p-n homojunction by combing nitrogen vacancies decorated g-C3N4 shown in Fig. 50d, 0D g-C3N4 nanoparticles can be formed on the sur­
(NV-g-C3N4) with g-C3N4. Li et al. [346] reported the construction of O- face of 1D g-C3N4 nanorods after the grind treatment.
doped crystalline/non-crystalline g-C3N4 homojunction system. Inter­ Indeed, although it is facile and easy to construct g-C3N4 based
estingly, the g-C3N4 with variety of spacial structures and energy band homojunction by controlling the calcination procedure and the type of
structures can be form by carefully controlling the precursors and treat precursors, the limited types and forms of homogeneous junctions are
temperatures and thus making the construction of homojunction easier also a problem that needs to be solved. A widely adopted strategy is to
and controllable. Liu et al. [347] reported the fabrication of g-C3N4 construct the homojunction by modifying partial of g-C3N4. For
based homojunction by treating the melamine precursor at different example, coming from the same precursor urea and calcining with the
temperatures. As shown in Fig. 50a, amorphous g-C3N4 (A600GCN) was same procedures, Tang et al. [351] treated partial of the sample with
obtained at 600 ◦ C while crystalline g-C3N4 (CGCN) was gotten after Poly (N,N-dimethyl acrylamide) to prepare the PDI-g-C3N4, which was
heating A600GCN at 750 ◦ C. Thus, the amorphous/crystalline g-C3N4 then treated together with another partial of g-C3N4 and thus obtaining
homojunction can be formed by treating CGCN in the presence of mel­ the PDI-g-C3N4/g-C3N4 (CPH) homojunction (Fig. 50e). Similarly, Feng
amine at 750 ◦ C. Li et al. [348] investigated the influence of tempera­ et al. [352] introduced a NaOH-assisted thermal polycondensation for
tures on the crystalline of g-C3N4 with the use of different precursors the preparation of N deficient g-C3N4, which was then combined with
(Fig. 50b). They found that the temperature of crystalline g-C3N4 formed pristine g-C3N4 and thus obtaining g-C3N4/g-C3N4-x homojunction

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 50. (a) Illustration of preparation process of A-CGCN composites. Adapted with permission from ref [347]. Copyright by 2018 The Royal Society of Chemistry.
(b) Schematic diagram for the formation of crystalline g-C3N4 and crystalline/ none-crystalline g-C3N4 nano-homojunction. Adapted with permission from ref [348].
Copyright by 2020 Elsevier. (c) Formation illustration of g-C3N4 layered homojunctions. Adapted with permission from ref [349]. Copyright by 2022 Elsevier. (d) The
schematic diagram of preparation process and photocatalytic test of MUCN. Adapted with permission from ref [350]. Copyright by 2021 Elsevier. (e) The synthesis
procedure of the g-C3N4/PDI-g-C3N4 homostructures. Adapted with permission from ref [351]. Copyright by 2021 Elsevier.

(Fig. 51). By controlling the ratio of g-C3N4-x to pristine g-C3N4, the formation of type II energy transfer pathway between the two different
maximized utilization of light energy and photocatalytic activity can be morphologies of g-C3N4. By depositing 2D sulfur-doped g-C3N4 NSs on
achieved due to the construction of balance between light absorption the surface of 3D g-C3N4 flower-like hierarchical structure (CN) through
and charge separation. the Van der Waals force, Xing et al. [355] constructed the 2D/3D g-C3N4
Our group [344] developed a homojunction by in situ decorating 2D homostructure (Fig. 54b). The optimal photocatalytic H2 evolution of
g-C3N4 (CN) with C-N compounds broken by s-triazine unit (BST), the 2D/3D CNSCN reached up to 2196 μmol/g/h, which was 4.1 and 3.2
formation of CN/BST homojunction photocatalyst can be confirmed times higher than that of CN and CNS, respectively. Ma et al. [306] re­
from the AFM measurement (Fig. 52a and b). It was revealed that the ported the band alignment of 0D/2D homojunction by anchoring CN
BST fragments tightly anchored on the CN NSs and act as electron- quantum dots on g-C3N4 NSs (Fig. 54c), which displayed 8.6 times
trapping agents to rapidly transfer photogenerated electrons from the higher H2 evolution ability than that of g-C3N4 NSs.
CB of CN and thus efficiently inhibiting the recombination of photo­
generated electrons and holes (Fig. 52c). As a result, the optimized CN/ 7.3.5. Single atoms decorated g-C3N4 heterostructure
BST homojunction presents significantly enhanced photocatalytic H2 Due to the special polymeric nature, g-C3N4 displays large specific
generation rate of 12.47 mmol/g/h, which was about 4 and 33 times area and good flexibility, thus can be used as a matrix compatible with
higher than that of pristine CN and BST, respectively. various nanoparticles to prepare g-C3N4-supported composites. Espe­
By using melamine and thiourea as precursors and NH4Cl as soft- cially, the sufficient regularly distributed N atoms in g-C3N4 served as
template, Nong et al. [353] obtained the g-C3N4 with simultaneous ideal anchoring centers to ensure the high dispersing of metal atoms,
isotype heterojunction and porous structure by a thermal poly­ which makes it possible for the prepare of single atom catalyst decorated
condensation method (Fig. 53a), which displayed superior photo­ heterostructure system. Single atoms (SAs) modified g-C3N4 hetero­
catalytic ability compared to the traditional g-C3N4 catalyst (Fig. 53b). It structures have been recently gaining increasing attention due to the
was found that the photogenerated e− and h+ can effectively diffuse to outstanding PHE performance caused by the maximized efficiency of
the surface of the catalyst due to the efficient separation and charge metal atoms. Many SAs, such as Pd [356,357], Pt [358–360], Au [361],
transfer resulted from the formation of the isotype heterojunction Ni [362], Cu [363], Ru [364], Co [365], and Ag [366,367] atoms, have
structure, thus improving the photocatalytic efficiency (Fig. 53c). been introduced into the 2D plane to improve the PHE ability of g-C3N4.
Zeng et al. [340] fabricated a triazine g-C3N4/tri-straizine g-C3N4 Wang et al. [367] constructed single atom Ag and carbon dots co-
homojunction. Tan et al. [354] constructed the homojunction by decorated g-C3N4 catalyst. Zhu et al. [368] studied the size effect of Pt
combining meso-g-C3N4 with g-C3N4 NSs (Fig. 54a), the formed homo­ on the PHE activity of g-C3N4, and they found that the size of Pt can be
junction displayed much enhanced H2 evolution ability due to the controlled from single atoms to nano-clusters by the induced amount of

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 51. (a) Schematic illustration for the preparation of g-C3N4-x/g-C3N4 homojunction (left) and the corresponding photocatalytic activities of the samples (right).
(b) 3D charge density difference and corresponding planar averaged charge density difference for g-C3N4-x/g-C3N4. (c) Charge transfer and relative energy band
potential for g-C3N4-x/g-C3N4 homojunction. Adapted with permission from ref [352]. Copyright by 2023 Elsevier.

Fig. 52. (a) Two- and (b) three-dimensional AFM images of CN/BST-0.05, (c) Schematic diagram of the charge transfer mechanism of CN/BST-0.05. Adapted with
permission from ref [344]. Copyright by 2023 Royal Society of Chemistry.

Pt precursor. The single atom Pt modified g-C3N4 can be obtained with which was much higher than that of Ru nanoparticles decorated sample
about 0.1 wt% Pt loading amount, which displayed the highest PHE rate (Fig. 55f). The authors thought that the most photo-introduced electrons
of 473.82 µmol mg− 1 among the samples. The remarkably increased were concentratedly extracted into Ru-sites from the directional charge
photocatalytic ability was mainly attributed to the synergistic effect of transfer-channels at once. At the same time, the metal-support in­
high light adsorption efficiency, effective charge separation, and highly teractions decreased the activation energy of reduction reaction, making
dispersed active sites of Pt atoms. the Ru-sites act as preferential reactive sites to reducing H− to H2
Ru is another widely studied metal in constructing SAs decorated g- (Fig. 55g). Zhang et al. [369] constructed phosphorus-coordinated Co
C3N4 system. As shown in Fig. 55a, Li and co-workers [364] prepared atom on g-C3N4 for overall water splitting, in which the anchored Co
micro-tailored porous g-C3N4 (t-CN) by H2O2 via a hydrothermal pro­ single atom site is the active site for oxygen evolution reaction, while the
cess, and then Ru SAs were loaded on the surface to get Ru1-t-CN hy­ N atoms act as active sites for hydrogen evolution reaction.
brids. The successful fabrication of SAs decorated sample was confirmed Huang et al. [370] fabricated Ni SAs decorated g-C3N4 catalyst for
by using the AC-SEM and XANES measurements (Fig. 55b to e). As a outstanding photocatalytic overall water splitting. It was found that the
result, the Ru SAs decorated t-CN displayed superior H2 evolution rate, utilization of a SA Ni-terminating agent to coordinate with the heptazine

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 53. (a) Formation of g-C3N4 with simultaneous isotype heterojunction and porous structure. (b) The first-order kinetics of the photocatalytic degradation
activity. (c) Photodegradation mechanism of the sample under visible light irradiation. Adapted with permission from ref [353]. Copyright by 2023 Springer.

moieties of g-C3N4 resulted in the formation of a new electronic orbital, Zhai et al. [373] investigated the micro environment variation of Pt
which is critical for optimizing photocatalysis associated with carbon SAs in affecting the defective levels of g-C3N4 and revealed the mecha­
defects. The atomic and electronic structures and the band gap of g-C3N4 nism of the promoted photocatalytic properties. Based on theoretic
were adjusted by the new hybrid orbital. The SA Ni and the adjacent C calculation, they found that the charge redistribution of Pt SAs for Pt-
atom are recognized as the active sites for water oxidation and reduc­ C2N is much greater than that of Pt-N2, indicating a stronger interaction
tion, respectively, resulting in the efficient photocatalytic splitting of between the isolated Pt atoms and the lone-pair electrons of the neigh­
water via a two-electron transfer pathway. boring carbon/nitrogen atoms for Pt-C2N, which may be because that
In addition, the interlayer SA decoration system was also reported. the electronegativity of C atoms is lower than N atoms (Fig. 58a and d).
Ren et al. [356] fabricated palladium SA coordinated cyano-group-rich Thus, Pt SAs can act as a preferable active site to capture more electrons
g-C3N4 (DN-UCN). Base on experiments and calculation, they claimed during the photocatalytic process (Fig. 58c and d). In addition, the
that the special structure of DN-UCN nanosheets creates a physical correlation between the coordination environment of isolated atoms and
confinement environment for Pd atoms, while cyano groups serve as the hydrogen evolution activity was also studied. As shown in Fig. 58e,
favorable anchoring sites for linking Pd atoms and DN-UCN via the Pd − compared with Pt-N2 sites, Pt-C2N displays a suppressed Gibbs free en­
N coordination approach, thus guaranteeing the stabilization of isolated ergy (ΔG*) of (− 0.06 eV), indicating that the H* desorption barrier is
Pd atoms in the interlayers of DN-UCN nanosheets (Fig. 56a). The co­ decreased, resulting in remarkably improved PHE activity for the Pt SAs
ordination of Pd atoms can modify the electronic structure and energy decorated sample. Focus on increasing the photocatalytic performance,
band structure of g-C3N4 and create a built-in electric field to boost strong electronic interactions between the active metal sites and sur­
charge-transfer dynamics. In addition, it was found that the charge rounding atoms are critical [374,375]. Additionally, the local coordi­
separation and transfer efficiency can be largely improved through the nation environment of SAs has a significant influence on both its
Pd-N coordination bonds formed in the Pd-bridged interlayer channels, electrical structure and catalytic behavior [376].
thus boosting the photocatalytic H2 evolution activity (Fig. 56b). Similarly, Fang et al. [377] studied the H2 evolution ability of single
Many researchers tried to give out explanation to the enhancement site Co-S anchored g-C3N4. As shown in Fig. 59a, in the fabrication of the
of PHE ability on SAs decorated catalysts. Yang et al. [371] investigated SAs decorated system, they firstly inserted single atom Co into the
the regulating effect of Pt SAs on photocatalytic overall water splitting structure of g-C3N4, and then the sample was vulcanized to prepare
performance of g-C3N4 based on energy band engineering by the spin- composite Co-S single-site in g-C3N4. The formation of SAs decorated
polarized DFT calculations. It was found that the SA Pt resulted in sample can be confirmed from the TEM and element distribution map­
more positive VB of g-C3N4, thus the enhanced photo-response of the g- pings shown in Fig. 59b to d. As a result, the co-introduction of Co and S
C3N4 was due to the reduced in the band gap of the system rather than single SAs displayed improved H2 evolution ability and good stability
the introduction of impurity levels (Fig. 57a), which was also reported (Fig. 59e to g). Base on theoretic calculation, it was found that the ab­
by others in the SA Pd decorated systems (Fig. 57b and c) [356,357]. In solute value of the standard Gibbs free energy of Co-S-CN (− 0.86 eV) is
addition, the free energy change of H adsorbed on the g-C3N4 was as much lower than that of CN (− 2.03 eV) (Fig. 59g), indicating that the
high as − 1.53 eV, while that of H adsorbed on the Pt SAs decorated g- hydrogen evolution reaction occurs more easily on the Co-S-CN photo­
C3N4 was as low as 0.32 eV. This indicates that the PHE occurred on Pt catalyst. Xu et al. [372] reported a much-improved PHE performance on
SAs decorated g-C3N4 is higher than that on the g-C3N4. the SA Pd decorated g-C3N4, it was also demonstrated that the enhanced

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 54. (a) The formation procedure of meso-g-C3N4/g-C3N4 NSs laminated homojunction (left) and transfer path mechanism of photogenerated electron-hole in
meso-g-C3N4/g-g-C3N4 NSs laminated homojunction (right). Adapted with permission from ref [354]. Copyright by 2017 Elsevier. (b) and (c) are TEM images of
CNCNS, (d) Photocatalytic mechanism scheme of 2D/3D CNSCN homojunction. Adapted with permission from ref [355]. Copyright by 2022 Elsevier. (f)TEM image
of HJ-C3N4; (g) Magnified TEM image of HJ-C3N4 of region of (f) marked in red and a size distribution of CN QDs; (h) HRTEM image of CN QDs anchored in 2D g-
C3N4; (i)The estimated band structure of CN QDs and bare g-C3N4. Adapted with permission from ref [343]. Copyright by 2021 Elsevier.

photocatalytic activity is mainly due to the dramatically decreased Some artful design, such as energy band structure manipulation, sur­
Gibbs free energy for atomic hydrogen adsorption onto the catalyst face/interface engineering, multiple-component heterostructures as
surface. well as the selection of proper coupling material make it possible to
It can be concluded that SAs have great potential for increasing the optimize the charge behavior and take the full advantages of each other
PHE ability of g-C3N4, and the improved H2 evolution ability can be components. It is undoubted that some more smart design will be re­
ascribed to some typical merits brought by the introduction of SAs, such ported in the exploration of high-performance g-C3N4-based photo­
as the improved light absorption capacity, charge transfer efficiency, catalyst to further promote the development of photocatalytic H2
maximized atomic utilization, as well as electron conductivity. Most evolution technology.
importantly, the introduced SAs can efficiently decrease the Gibbs free
energy of H adsorbed on the g-C3N4, fundamentally improving the ki­ 8. Conclusion and outlook
netics of photocatalytic reaction, which has been verified in many
photocatalytic reactions. At the same time, the strong interaction be­ PHE from water splitting is a fantastic strategy to convert solar en­
tween the anchored SAs and the N atom in g-C3N4 guarantees the good ergy and water source into H2 energy, but the practical application of
stability and long-life of hybrid system. this technology poses a great challenge to the development and design of
In summary, the construction of g-C3N4-based heterostructures and photocatalysts. g-C3N4-based photocatalysts are in the hotpot of PHE
homostructures are useful in obtaining improved the H2 evolution field due to the merits of suitable energy band structure, good visible
ability due to the promoted charge transfer and utilization efficiency. light response ability, 2D planar character, good durability, easy to

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 55. (a) Illustration of preparation principle of Ru1-t-CN. (b) AC-STEM image of Ru1-t-CN. (c) The normalized XANES at the Ru K-edge. (d) The k2 -weighted FT-
EXAFS in R-space. (e) Ru K-edge EXAFS and curve-fft for Ru1-t-CN. (f) H2 evolution activity of the samples. (g) Catalytic mechanism illustration of Ru1-t-CN
photocatalyst. Adapted with permission from ref [364]. Copyright by 2022 Elsevier.

Fig. 56. (a) Top view, side view and of charge density distributions of DN-UCN and Pd/DN-UCN and the corresponding PDOS of each them. (b) Charge Separation
and Transfer as well as the mechanism for H2 Evolution in the 0.16%Pd/DN-UCN0.50 System under Full Solar Light Spectrum Irradiation. Adapted with permission
from ref [356]. Copyright by 2022 American Chemical Society.

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 57. (a) Diagram of band edge positions for the pristine monolayer g-C3N4 (left) and SA Pt decorated g-C3N4 (right). Adapted with permission from ref [371].
Copyright by 2021 Elsevier. (b) schematic illustration of the band gap structure of CN, Pd-CN, and Pdnano-CN. Adapted with permission from ref [372]. Copyright by
2021 Springer. (c) band structure alignments of various g-C3N4 and Pd/g-C3N4 samples. Adapted with permission from ref [356]. Copyright by 2022 American
Chemical Society.

fabrication and low cost. Focus on the basic properties, fabrication, and small kind of catalysts. In this point, researchers should take fully the
modification in photocatalytic H2 evolution, this review presents a organic properties and morphology adjustability of g-C3N4 into
comprehensive overview of g-C3N4-based photocatalysts. Despite the consideration and form chemical bonds link between g-C3N4 and the
significant advances have been made, the photocatalytic activity and second photocatalyst, so as to construct strong and stable interfacial
durability of g-C3N4-based photocatalysts are still far away to practical contact to promote the rapid migration and separation of carriers.
applications. The design and construction of proper of photocatalysts 3) Some explanation to the movement of charge carriers and the pho­
and the optimization of photocatalytic reaction system are in the crucial tocatalytic mechanism are still disputable. For example, some
needs to improve the photocatalytic performance and thus are worth researcher thinks that shorter lifetime of photogenerated charge
exploring in the future studies. carriers is good for photocatalytic reaction because of a faster charge
transmission speed, but some others believed that longer lifetime
1) Self-modification is useful in changing the intrinsic electron struc­ meaning that the photogenerated charge carriers have more oppor­
ture and energy band position of g-C3N4, thus are expected to tunity to transfer to the surface-active reaction sites before annihi­
improve the light absorption ability of photocatalyst and the lation. It is obvious that the photocatalytic performance is a
reduction capacity of photogenerated electrons, but it worth noting comprehensive result effected by multiple factors such as light ab­
that the self-modification procedure including doping and defect sorption, charge transfer and surface reaction, more advanced
engineering also bring inevitable negative effects such as charge characterization methods, in-situ detection and theoretical calcula­
recombination and deep traps that induced by the unmanageable tion are expected to be used to further reveal the true face of pho­
doping level and defect distribution. Therefore, it is a technical task tocatalytic reactions.
in introducing impurities or defects into g-C3N4. 4) There is lack of an impeccable index and standard procedure to
2) The construction of heterostructure is useful in realize complemen­ compare fairly the photocatalytic hydrogen performance of various
tary advantages but also faces some thorny problems, one of them is g-C3N4-based photocatalysts in different photocatalytic system.
the formation of contact interface, the traditional liquid fabrication Despite the photocatalyst itself, the photocatalytic performance is
method usually introduce impurity while solid high temperature also seriously affected by the test procedure, such as the amount of
calcination method is difficult to achieve uniform distribution of used photocatalyst in one reaction, the type and quantity of co-
different components, thus fail to form large area strong coupling catalysts and sacrificial reagents, reaction temperature, as well as
interface and result in limited photocatalytic performance the intensity and wavelength of light sources, etc. All of these
enhancement. In-situ strategy is promising in construct large area mentioned factors are various in different literature, as a result, the
intimate contacted interface between g-C3N4 and the second photo­ performance of photocatalytic hydrogen production is hardly com­
catalyst, but the utilization of in-situ strategy is only available in a parable in different studies. Therefore, it is critically important to set

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D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

Fig. 58. Charge density difference of (a) Pt-C2N and (b) Pt-N2 (isosurface value = 0.005 Å-3), PDOS plots of (c) Pt-C2N and (d) Pt-N2, and (e) Gibbs free energies of
Pt-C2N and Pt-N2 Adapted with permission from ref [373]. Copyright by 2023 American Chemical Society.

Fig. 59. (a) Schematic diagram of the preparation of Co-S-C3N4. (b) TEM image and (c) HAADF-STEM image of Co-S-CN, and (d) is the corresponding elemental
mappings. (e) Photocatalytic hydrogen evolution performance of the as-prepared samples under visible light (λ > 400 nm). (f) Stability of photocatalytic hydrogen
evolution over CoS-CN. (g) The LSV curves and (h) the standard Gibbs free energy for the HER of CN and Co-S-CN. Adapted with permission from ref [377]. Copyright
by 2022 Elsevier.

proper standards to unify the photocatalytic performance tests and Declaration of Competing Interest
promote the development of g-C3N4-based photocatalytic H2
evolution. The authors declare that they have no known competing financial

47
D. Ma et al. Coordination Chemistry Reviews 500 (2024) 215489

interests or personal relationships that could have appeared to influence hydrogen evolution reaction under visible light, Energy Environ. Sci. 12 (2019)
2080–2147.
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