You are on page 1of 64

Electro Technology

EE1202
Semiconductor Diodes
(contd..)
CURRENT VOLTAGE ( I-V ) CHARACTERISTIC

ID • VD = Bias Voltage
• ID = Current through
Diode. ID is Negative for
Reverse Bias and
IS
Positive for Forward Bias
VBR
• IS = Saturation Current
~Vф VD
• VBR = Breakdown Voltage
• Vф = Barrier Potential
Voltage
CURRENT VOLTAGE ( I-V ) CHARACTERISTIC

( 𝐼𝑠 )
𝐼𝑠 𝑛𝐴
𝑚𝐴
CURRENT VOLTAGE ( I-V ) CHARACTERISTIC
CURRENT VOLTAGE ( I-V ) CHARACTERISTIC

𝐼𝐷 = 𝐼𝑠 (𝑒 𝑉𝐷 /𝑛𝑉𝑇 − 1)

𝐼𝑠 = 
𝐼𝐷 = 
𝑒 = 
𝑉𝐷 = 
𝑛 = 
𝑉𝑇 = 
CURRENT VOLTAGE ( I-V ) CHARACTERISTIC

𝐼𝐷 = 𝐼𝑠 (𝑒 𝑉𝐷 /𝑛𝑉𝑇 − 1)

𝐼𝑠 = 
𝐼𝐷 = 
𝑒 = 
𝑉𝐷 = 
𝑛 =  00:09:42
𝑉𝑇 = 
CURRENT VOLTAGE ( I-V ) CHARACTERISTIC

𝐼𝐷 = 𝐼𝑠 (𝑒 𝑉𝐷 /𝑛𝑉𝑇 − 1)


𝑘𝑇
𝑉𝑇 =
𝑞

• 𝜂
The graph of I vs. V for a diode
depend upon the location where it
is computed

At region A

At region B

r in region B > r in region A


AC AND DC RESISTANCE
Diode is non linear device and its dc and ac resistance change over a wide range.

AC resistance (dynamic resistance),rD


The varying input will move the instantaneous operating point up and down. A
region of the characteristic and thus defines specific change in current and voltage,
that can used to determine the AC or dynamic resistance for this region of the
diode characteristic

The ac resistance is approximated by

ηVT Where VT is the thermal voltage


rD = (For T = 300K,VT is about 0.026V
ID I is dc current through the diode.

0.026
( at room temperature ) rD = Ω
ID
AC AND DC RESISTANCE
DC resistance (static resistance) RD
The application of a dc voltage to a circuit containing a semiconductor diode will
result in an operating point on the characteristic curve. That will not change with
time. the resistance of the diode at the operating point DC or static resistance.

where
V – dc voltage across the diode
I – dc current through the diode

Like ac resistance the dc resistance of a diode depends on the point on

Bulk Resistance (rB)


The resistance of the semiconductor material and the contact resistance Where the
external leads are attached to the pn junction can be lumped together and called the
bulk resistance rB of the diode.

m total ac resistance of the diode = rD + rB


A NALYSIS OF D IODE C IRCUITS

Simplified Diode
Model

D γ Diode Reversed Biased

D γ Diode Forward Biased

D A K

A K
A K γ
D
γ
A NALYSIS OF D IODE C IRCUITS

Diode Switching Circuits


In these applications, the circuit voltages are pulse – type waveforms or square
waves that alternate between a “low” voltage, often 0 volts, and a “high” voltage
such as +5V.
A NALYSIS OF D IODE C IRCUITS

D1 D1

R1 R1
5V 0V

0.7V
R1
R1 5V
5V
L OGIC C IRCUITS U SING D IODES
In a diode logic system, the logic gates are implemented by using diodes.

OR Gate

Input Voltage Output


A (V) B (V) Voltage (VO)
0 0 0
0 5 5
5 0 5
5 5 5

A B VO = Y
0 0 0
0 1 1 Y =A+ B
1 0 1
1 1 1
L OGIC C IRCUITS U SING D IODES
AND Gate

Input Voltage Output


A (V) B (V) Voltage (VO)
0 0 0
0 5 0
5 0 0
5 5 5

A B VO = Y
0 0 0
0 1 0
1 0 0 Y =A. B
1 1 1
D IODE L I MI T I N G C IRCUITS (C LIPPER )
Diode circuits, called limiters or clippers, are sometimes used to clip off portions of
signal voltages, above or below certain level.

Positive clipping
D IODE L I MI T I N G C IRCUITS (C LIPPER )

VA
At Initial
R1
VIN A IN
D1
VK
K

Condition for Forward Biasing

D γ

A K γ

IN γ

IN γ

Therefore diode will conduct when IN γ

diode in reverse bias when IN γ


D IODE L I MI T I N G C IRCUITS (C LIPPER )
When diode Forward bias
D IODE L I MI T I N G C IRCUITS (C LIPPER )
When diode Reverse bias
D IODE L I MI T I N G C IRCUITS (C LIPPER )
Positive clipping

Therefore diode will conduct when IN γ


VIN

VP

Vg

-VP

VOUT

Vg

-VP
D IODE L I MI T I N G C IRCUITS (C LIPPER )
Negative clipping

RS

Vin V Vout

Vout
D IODE L I MI T I N G C IRCUITS (C LIPPER )

R1 At Initial
VK

VIN A
D1
VA
K IN

Condition for Forward Biasing

D γ

A K γ

IN γ

IN γ

Therefore diode will conduct when IN γ

diode in reverse bias when IN γ


D IODE L I MI T I N G C IRCUITS (C LIPPER )
When diode Forward bias

RS

Vin V Vout

Vout
D IODE L I MI T I N G C IRCUITS (C LIPPER )
When diode Reverse bias

RS

Vin V Vout

Vout
D IODE L I MI T I N G C IRCUITS (C LIPPER )
RS

Negative clipping
Vin V Vout

Vout

Therefore diode will conduct when IN γ


VIN

VP

Vg

-VP

VOUT

VP

Vg
D IODE L I MI T I N G C IRCUITS (C LIPPER )

Vin

Vp

0
t

-Vp
D IODE L I MI T I N G C IRCUITS (C LIPPER )
VA VK

At Initial
D1
V

VIN
R1 K

K IN

Condition for Forward Biasing

D γ

A K γ

IN γ

IN γ

Therefore diode will conduct when IN γ

diode in reverse bias when IN γ


D IODE L I MI T I N G C IRCUITS (C LIPPER )
When diode Forward bias
D IODE L I MI T I N G C IRCUITS (C LIPPER )
When diode Forward bias
D IODE L I MI T I N G C IRCUITS (C LIPPER )
When diode Forward bias

Therefore diode will conduct when IN γ


VIN

VP

Vg-V

-VP

VOUT

VP+V-Vg

t
C LAMPING C IRCUITS
Clamping circuits are used to shift an ac waveform up or down by adding a dc level
equal to the positive or negative peak value of the ac signal. Clamping circuits are
also called dc level resistors, because they are used in systems (eg: television) where
the original dc level is lost in capacitor – coupled amplifier stages. Therefore
clamping circuits are used to add a fixed dc level to the ac signal.

Positive
Clamping
Circuit

Original dc
dc level shifted to +
level
Vp

Negative
Clamping
Circuit

dc level shifted to -
Vp
C LAMPING C IRCUITS
C LAMPING C IRCUITS
C LAMPING C IRCUITS

From 0 -- T/2 diode is “on” state.

VC

C1

V R1

The resulting time constant is so small that the capacitor will charge to V
volts very quickly.

VC =V
C LAMPING C IRCUITS

From T/2 -- T
VC

C1

V VR
R1

by KVL

R C

R
C LAMPING C IRCUITS

Second Positive half cycle


VC

C1
V
R1 VR

by KVL

C R

R
C LAMPING C IRCUITS

Vin

V p-p = 2V
0 T/2 T 3T/2 2T t (i/p swing)

-V
Vout

0 T/2 T 3T/2 2T t

V p-p = 2V
-V
(o/p swing)

- 2V
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below
Vin

10

0
t

-10

During the First Positive half cycle


VC

C1

VIN R1 VR
0.7

the capacitor will charge to

C IN
C

C
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below
Vin

10

0
t

-10

Applying KVL after capacitor charges


VC

C1

VIN R1 VR
0.7

R IN C

R IN
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below
Vin

10

0
t

-10

During Negative Half Cycle


Output peak value R
During positive Half Cycle

Output peak value R


C LAMPING C IRCUITS

VIN

10V

-10V

VOUT

0.7
t

-19.3
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below

Vin

+V2

0
t

-V1
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below
Vin

10

0
t

-10

During the First NegativeV half cycle


C

C1

VIN R1 VR
0.7

the capacitor will charge to


C IN

C
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below
Vin

10

0
t

-10

Applying KVL after capacitor charges


VC

C1

VIN R1 VR

R IN C

R IN
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below
Vin

10

0
t

-10

During positive Half Cycle


Output peak value R

During Negative Half Cycle

Output peak value R


C LAMPING C IRCUITS
VIN

10V

-10V

VOUT

19.3

t
-0.7
C LAMPING C IRCUITS
Eg. Determine the output of the clamping circuit given below
Zener Diode Characteristics
Zener Diode

Cathode Cathode

ZZ
V Zl
VZ VZ VZ

Anode Anode

Ideal Zener Diode Practical Zener Diode


Zener Diode

Zener Biasing

For proper working of a zener diode in any circuit, it is essential that it must

• be reverse biased
• have voltage across it greater than VZ
• be in a circuit where current is less than IZ(max)
Zener Diode

APPLICATIONS

Zener- Diode voltage Regulator

The circuit is an elementary “ Voltage Regulator” that holds the


load voltage near VZ volts as RL and/or Vin undergo changes.
ZENER DIODE

Meter Protection.

To obtain reference voltage levels.

InWave shaping circuit (Clippers or limiter)


D IODE L I MI T I N G C IRCUITS (C LIPPER )

Zener Limiting

Vout

VZ

0
-0.7 V t
VARACTOR DIODE
VARACTOR DIODE
The varicap diode can be used in a simple LC tuning circuit as shown

Calculate the equivalent series capacitance for fig. 3.2(c) if C2 is 0.005 uF and C1
varies from 400 to 100pF as the tuning voltage increases

(Ans. 370pF, 98pF)


(Note: In both cases, the series capacitance is close to the value of C1 alone)
VARACTOR DIODE

Doping is uniform on both


sides of the junction.
The tuning range: enough to tune an AM radio
through its frequency range
of 550-1650 kHz

Not enough to tune a broad-


cast receiver over its entire
frequency range of 550-1650
kHz
Optoelectronics Devices
Photo conductive cell or photo resistor
Optoelectronics Devices
Photo Diode
OPTOELECTRONIC DEVICES
LIGHT – EMITTING DIODES ( LED )
If the material is translucent and if the light energy released is visible, then a PN
junction having those properties is called a light – emitting diode (LED).
OPTOELECTRONIC DEVICES
LIGHT – EMITTING DIODES ( LED )

hc
λ=
Eg
–6
1.24 10
λ=
Eg
Eg = Energy gap in eV
λ =Wavelength
h = Planck’s Constant = 4.135667696×10−15 eV s
c = speed of light = 3 × 108 m/s
OPTOELECTRONIC DEVICES
OPTOELECTRONIC DEVICES
LIGHT – EMITTING DIODES ( LED )

Figure shows on LED driver circuit, designed to illuminate the LED when the
transistor is turned on (saturated) by a 5V positive input at its base. Find the values
of RB and RC that should be used if the LED is to be illuminated by 20mA of forward
current. Assume that the forward drop across the LED is 2.5V and that the silicon
transistor has
OPTOELECTRONIC DEVICES
LIGHT – EMITTING DIODES ( LED )
A very popular use for LEDs is in the construction of seven-segment displays. By
illumination selected segments, any numerical from 0 through 9 can be displayed

You might also like