You are on page 1of 1

INTERNATIONAL ISLAMIC UNIVERSITY ISLAMABAD

FACULTY OF ENGINEERING & TECHNOLOGY


DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING
Assignment 1
COURSE NAME Power Electronics BATCH F19
COURSE CODE EE-421 MAX. MARKS 5
INSTRUCTOR Dr. Khurram Hussain, Dr. Khizer Mehmood DEADLINE 11-11-2022

Question No. 1 (2.5) (C2) CLO-1 PLO-1


Following are the main tradeoffs in silicon-based power devices:

a) Increasing breakdown voltage results in an increase of ON-state losses.


b) Reducing ON-state losses results in increasing Switching times.
Discuss, keeping IGBT in mind, how these tradeoffs affect device performance and characteristics.

Question No. 2 (2.5) (C2) CLO-1 PLO-1


Discuss which device constructional features may affect following device parameters of a power device:

1. Breakdown Voltage
2. Low ON State Voltage
3. FAST Switching Time

You might also like