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ch 14 12th physics Date : 15/12/23

કુલ ગુણ ch 14 mcq 12phyguj2324 Time:
Section A
//X
• Choose correct answer from the given options. [Each carries 1 Mark] [30]

1. Resistivity of semiconductor is approximately ...... .

(A) (10–2 to 10–8) Wm (B) (10–5 to 10–6) Wm (C) (1011 to 1019) Wm (D) (10–5 to 10+6) Wm
2. The energy band diagram of a Si semi-conductor crystal at absolute zero temperature,
(A) has completely empty valence band and completely filled conduction band.
(B) has completely empty conduction band and completely filled valence band.
(C) has completely empty valence and conduction band and completely filled forbidden gap.
(D) the conduction band is partially filled.
3. The band gaps of a conductor, semiconductor and insulator are respectively Eg1, Eg2 and Eg3. The
relationship between them can be given as ......
(A) Eg1 = Eg2 = Eg3 (B) Eg1 > Eg2 > Eg3 (C) Eg1 < Eg2 < Eg3 (D) Eg1 < Eg2 > Eg3
4. When will the conductivity of a Ge semi-conductor decrease ?
(A) On adding donor impurity (B) On adding acceptor impurity
(C) On making UV light incident (D) On decreasing the temperature
5. On increasing the temperature, width of forbidden gap ......
(A) becomes zero (B) decreases (C) increases (D) not changing
6. A piece of copper and piece of germanium are cooled upto 80 K temperature so ......
(A) resistance of both increases
(B) resistance of both decreases
(C) resistance of copper piece increases and piece of germanium decreases.
(D) resistance of copper piece decreases and piece of germanium increases.
7. Resistivity of metal ...... and resistivity of semiconductor ...... on temperature decreases.
(A) increases, decreases (B) decreases, increases
(C) increases, increases (D) decreases, decreases
8. The density of electron and holes in an intrinsic semiconductor is ne and nh respectively. Which of the
following options are true ?
(A) nh > ne (B) ne > nh (C) ne = nh (D) nh >> ne

9. To make a p-type semiconductor out of pure silicon, it has to mix atoms of ...... impurity.
(A) phosphorus (B) boron (C) antimony (D) copper
10. The number density of electron is 4.5 ´ 1022m–3 and number density of holes is 4.5 ´ 109 m–3. This
semiconductor is ......
(A) p-type (B) n-type (C) intrinsic type (D) p and n both type
11. Which type of semiconductor has band diagram shown in the figure ?
(A) n-type semiconductor - room temperature EC
ED
(B) n-type semiconductor - 0 K temperature

(C) n-type semiconductor - 0° C temperature

(D) intrinsic semiconductor EV

12. What is the type of the semiconductor, for the energy band diagram shown in the figure ?
(A) n-type semiconductor Conduction band
EC
(B) p-type semiconductor
(C) Intrinsic semiconductor } 0.05 eV
EV
(D) Both n and p type semiconductor Valence band

13. If one Al atom added to 109 per atom of Si then charge on holes in one mole will be ......
(A) 1.6 ´ 10–10C (B) 1.6 ´ 10–5C (C) 1.6 ´ 10–8C (D) 0.6 ´ 10–19C
14. Potential near the junction in p-n junction is zero then potential at ...... is ......
(A) n-side, negative (B) p-side, negative (C) n-side, negative (D) p-side, positive
15. In p-n junction, depletion barrier near the junction is due to ......
(A) difference in crystal structure. (B) difference of resistance.
(C) difference of temperature. (D) potential difference near the junction.
16. If proportion of impurity is less in p-n junction ......
(A) the width of depletion region is more. (B) the width of depletion region is less.
(C) electric field is strong near junction. (D) electric field remains same near junction.
17. If the proportion of impurity increases in semiconductor in p-n junction then depletion region ......
(A) width increases (B) width decreases
(C) electric field becomes weak (D) electric field becomes same
18. Increasing forward voltage in diode, the width of depletion layer is ......
(A) decreases
(B) increases
(C) does not change
(D) increases in proportion to the applied voltage
19. The ratio of resistance of forward bias and reverse bias in p-n connection is ......
(A) 102 : 1 (B) 10–2 : 1 (C) 1 : 10–4 (D) 1 : 104
20. What is responsible for depletion barrier in depletion layer ?
(A) Ions (B) Electrons (C) Holes (D) Forbidden gap
21. What is the width in cm of depletion layer in p-n junction ?
(A) 10–2 (B) 10–3 (C) 10–6 (D) 10–8
22. The potential barrier of 0.5 V exist across a p–n junction. If the depletion region is 5.0 ´ 10–7m wide,
then the intensity of the electric field in this region is ......
(A) 1.0 ´ 109 V/m (B) 1.0 ´ 106 V/m (C) 2.0 ´ 105 V/m (D) 2.0 ´ 106 V/m
23. Which one of the following diode is in forward bias ?
0V +2 V 0V –2 V
(A) (B)
–2 V 0V +2 V +5 V
(C) (D)

24. At absolute zero temperature Si acts as ......

(A) non metal (B) metal (C) insulator (D) none of these
25. The energy band gap is maximum in ......
(A) metals (B) insulator (C) super conductor (D) semiconductor
26. By increasing the temperature, the specific resistance of a conductor and a semiconductor.
(A) increases for both (B) decreases for both
(C) increases, decreases (D) decreases, increases
27. When p-n junction diode is forward biased ......
(A) the depletion region is reduced and barrier height is increased.
(B) the depletion region is widened and barrier height is reduced.
(C) both the depletion region and barrier height reduced.
(D) both the depletion region and barrier height increased.
28. The depletion layer in the p-n junction region is caused by .....
(A) drift of holes. (B) diffusion of charge carriers.
(C) migration of impurity ions. (D) drift electrons.
29. When a p-n junction diode is reverse biased, the flow of current across the junction is maninly due
to ......
(A) diffusion of charges (B) drift charges (C) both (A) and (B) (D) kind of material
30. Application of a forward bias to a p-n junction .....
(A) widens the depletion zone.
(B) increases the potential difference across the depletion zone.
(C) increases the number of donars on the n-side.
(D) increases the electric field in the depletion zone.
 ...
ch 14 12th physics Date : 15/12/23
કુલ ગુણ ch 14 mcq 12phyguj2324 Time:

Section [ A ] : 1 Mark MCQ

No Ans Chap Sec Que Universal_QueId

1. D Chap 14 (22-23) S6 3 QP22P11B1211_P2C14S6Q3
2. B Chap 14 (22-23) S6 4 QP22P11B1211_P2C14S6Q4
3. C Chap 14 (22-23) S6 5 QP22P11B1211_P2C14S6Q5
4. D Chap 14 (22-23) S6 6 QP22P11B1211_P2C14S6Q6
5. B Chap 14 (22-23) S6 7 QP22P11B1211_P2C14S6Q7
6. D Chap 14 (22-23) S6 8 QP22P11B1211_P2C14S6Q8
7. B Chap 14 (22-23) S6 9 QP22P11B1211_P2C14S6Q9
8. C Chap 14 (22-23) S6 14 QP22P11B1211_P2C14S6Q14
9. B Chap 14 (22-23) S6 20 QP22P11B1211_P2C14S6Q20
10. B Chap 14 (22-23) S6 25 QP22P11B1211_P2C14S6Q25
11. A Chap 14 (22-23) S6 27 QP22P11B1211_P2C14S6Q27
12. B Chap 14 (22-23) S6 28 QP22P11B1211_P2C14S6Q28
13. B Chap 14 (22-23) S6 31 QP22P11B1211_P2C14S6Q31
14. B Chap 14 (22-23) S6 36 QP22P11B1211_P2C14S6Q36
15. D Chap 14 (22-23) S6 37 QP22P11B1211_P2C14S6Q37
16. A Chap 14 (22-23) S6 38 QP22P11B1211_P2C14S6Q38
17. B Chap 14 (22-23) S6 39 QP22P11B1211_P2C14S6Q39
18. A Chap 14 (22-23) S6 41 QP22P11B1211_P2C14S6Q41
19. D Chap 14 (22-23) S6 42 QP22P11B1211_P2C14S6Q42
20. A Chap 14 (22-23) S6 44 QP22P11B1211_P2C14S6Q44
21. C Chap 14 (22-23) S6 45 QP22P11B1211_P2C14S6Q45
22. B Chap 14 (22-23) S6 56 QP22P11B1211_P2C14S6Q56
23. B Chap 14 (22-23) S6 57 QP22P11B1211_P2C14S6Q57
24. C Chap 14 (22-23) S7 1 QP22P11B1211_P2C14S7Q1
25. B Chap 14 (22-23) S7 2 QP22P11B1211_P2C14S7Q2
26. C Chap 14 (22-23) S7 4 QP22P11B1211_P2C14S7Q4
27. C Chap 14 (22-23) S7 9 QP22P11B1211_P2C14S7Q9
28. C Chap 14 (22-23) S7 44 QP22P11B1211_P2C14S7Q44
29. B Chap 14 (22-23) S7 45 QP22P11B1211_P2C14S7Q45
30. C Chap 14 (22-23) S7 54 QP22P11B1211_P2C14S7Q54

Welcome To Future - Quantum Paper

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ch 14 12th physics Date : 15/12/23
કુલ ગુણ ch 14 mcq 12phyguj2324 Time:
Section A
//X
• Choose correct answer from the given options. [Each carries 1 Mark] [30]

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Welcome To Future - Quantum Paper

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Welcome To Future - Quantum Paper

Welcome To Future - Quantum Paper