Electronics (Part 1)

VGU 2024

Prof. Dr.-Ing. Sven Kuhn

Lesson 1

Fachbereich 2 Informatik und Ingenieurwissenschaften

Wissen durch Praxis stärkt Seite 1 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024
Electronics (Part 1)
Contents (part 1)
• Semiconductor material and pn-junction
• Semiconductor diodes and applications
• The bipolar junction transistor and applications

Contents (part 2)
• Field-effect transistors and applications
• Operational amplifiers and applications
• VLSI design

Seite 2 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Electronics (Part 1)

Literature:
Malvino, Bates: Electronic Principles, 7th Edition, McGraw Hill, 2007

G.J. Ritchie: Transistor Circuit Techniques, third edition

Available e.g. http://www.te.kmutnb.ac.th/~msn/transistor.pdf

Ron Mancini: Op amps for everyone, first edition

Available e.g.: https://web.mit.edu/6.101/www/reference/op_amps_everyone.pdf

Seite 3 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Classification of Solid-State Materials

Materials Resistivity (Ω * cm)

Insulators 105 < ρ
Semiconductors 10-3 < ρ < 105
Conductors ρ < 10-3

Seite 4 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Halbleiter

• Die Halbleiter gehören zur IV. Hauptgruppe

• Verbindungshalbleiter bestehen aus Elementen der IV., III. oder V. Hauptgruppe
• Germanium und Silizium hat die größte Bedeutung

Seite 5 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Silicon - Single crystal
• 4 electrons on the outer shell
• covalent bonding of each atom
• bonding to 4 neighbor atoms

Seite 6 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Bandgap energy

Seite 7 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Temperature behavior of semiconductor material

Seite 8 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Energy band model for intrinsic semiconductor

Valence band Valence band

Semiconductor at ϑ = 0 K Semiconductor at ϑ > 0 K

Seite 9 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024
Semiconductor material

Seite 10 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Donor impurities in silicon
• Donor impurities from column V
of periodic table
• Five valence electrons on the
outer shell
• One free electron for conduction
• Donor atom becomes ionized if
free electron moves away from
the phosphorus outer shell

Seite 11 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Acceptor impurities in silicon

• Acceptor impurities from column III of periodic table

• Three valence electrons on the outer shell
• Acceptor atom becomes ionized if the hole moves away from the bor atom outer
shell

Seite 12 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Energy band model for doped semiconductor

Seite 13 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material

Seite 14 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Temperature dependence of specific resistance

Seite 15 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Temperature dependence of electron concentration

Seite 16 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-junction
Depletion layer

unbiased reverse biased

Seite 17 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-junction
Energy band diagrams

Barrier for
electrons

Barrier for holes

Minority carrier

Majority carrier
Minority carrier

Seite 18 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-junction
Energy levels at the pn-junction

Seite 19 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-junction
Forward bias

Reduced barrier
for electrons

Seite 20 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

Semiconductor material
Temperature dependence of fermi energy

Seite 21 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Schematic symbol pn-diode Schottky-diode

Seite 22 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Characteristics of diodes
Silicon diode

pn-diode Schottky-diode

• Exponential increase of current at Vd > 0

• Small current of about 1 µA at Vd = 0.4 V

Seite 23 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Characteristics of diodes reverse biased

• Current increases slowly

• In region of breakdown voltage (Vbr)quick increase of current

Seite 24 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Large-signal characteristics of diodes

æ mU
UD
ö
ç
I D (U D ) = I S e T
- 1÷ für U D ³ 0
ç ÷
è ø

Saturation current Is: 10-12 A < IS < 10-6 A

Grading coefficient m: 1 < m < 2
Temperature Voltage: UT = kT/q approximately 26 mV at room temperature

Seite 25 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode
Example 1

Determine the current Id through the diode and the voltage Vd applied to the diode.
You can use purely mathematical or graphical methods for this. Use the equation for
the large-signal characteristics of this presentation.

V1 = 5 V; R = 100 Ohm
With diode 1N4148 use: Is = 2.68 nA, m = 1.84, Vt = 26 mV

R ID

V1 VD

Seite 26 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Example 1

UD= 0,82 V
IF= 42 mA

Seite 27 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Approximation of diode characteristics

UD

I D (U D ) = I S e mU T ID
If VD >> mVT : U D = mU T ln
IS

Seite 28 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Ohmic series resistance RB

ideal diode
ID
real diode U D = mU T ln + I D RB
IS

Seite 29 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode

Diode as a switch
• ideal model of a diode
(c)
a) ID = 0 at VD < VF
b) VD = VF at ID > 0

• model of a diode with series resistance

c) VD = VF + IDRB at ID > 0

Seite 30 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode
Example 2
Determine the operating points of the diodes in the following circuit. If necessary, make
suitable assumptions. (Vd = 0.7 V as long the diode is forward-biased, use ideal diode
model)

Seite 31 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024

PN-Diode
PSpice parameters of different diodes

Seite 32 Prof. Dr.-Ing. Sven Kuhn | Electronics (Part 1) March 2024