Basic Electronics Engineering

(F.E. Revised Syllabus 2019 course)

UNIT-I

Introduction to Electronics
 Teaching Methodology Detailing
Lecture Topic Books Page No.
No.

1. Evolution of Electronics T1 Preface

Impact of Electronics in Industry and Society

2. Materials used in Electronics, Introduction to active and

Passive components, switches and relays

3. Currents in semiconductors, P-type and N- type T1 1.4 and

semiconductors 1.6

4. P-N junction diode: construction and working, V-I T1 1.7,1.8,

characteristics 1.9

5. Diode as switch, Half, Full wave and Bridge rectifier T1 2.1, 2.2

6. Special purpose diodes: Zener diode, LED and Photo T1 3.1,3.4

diode and their applications

T1: “Electronics Devices ” by Thomas L. Floyd, 9 th Edition, Pearson

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 Evolution of Electronics
Vacuum tubes
 1904: the simplest vacuum tube – the diode – was
invented by John Fleming.
 1907: De Forest invented the triode by inserting
a third electrode between cathode and anode.

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 Vacuum Tubes

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 Vacuum tubes: audio amplifier

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 ENIAC computer (1946, University of
Pennsylvania)

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 ENIAC computer
 heralded as a "Giant Brain" by the press
 thousand times faster than electro-mechanical computer

 17,468 vacuum tubes, 7200 crystal diodes, 1,500 relays,

70,000 resistors, 10,000 capacitors, 6,000 manual
switches, and approximately 5,000,000 hand-soldered
joints.
 consumed 150 kW
 Input was possible from an IBM card reader
 100 kHz clock
 Several tubes burned out almost every day, leaving it
non-functional
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• about half the time. 7
 The first transistor
 The vacuum tube was a bulky and fragile device which consumed a
significant power.
 1947: Shockley, Bardeen, and Brattain at Bell Labs invented the first
transistor.
 The first transistor was a “point contact transistor.” The modern
transistor is a junction transistor, and it is monolithic (in the same
semiconductor piece).

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 Semiconductor technology
 The bipolar transistor continues to be an important device
both as
a discrete device and as part of Integrated Circuits (IC).
 However, in digital circuits such as processors and
memory, the MOS (Metal Oxide Semiconductor) field-
effect transistor has surpassed the bipolar transistor
because of the high integration density and low power
consumption it offers.
 1930: patent filed by Lilienfeld for field-effect transistor
(FET).
 1958: Jack Kilby (Texas Instruments) demonstrated the first
integrated circuit (bipolar transistor, resistor, capacitor)
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 Semiconductor technology

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Modern semiconductor technology

silicon wafer
Modern semiconductor technology

Diffusion
furnace
 Modern semiconductor technology

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 Modern semiconductor technology

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 Active and passive components

BJT, JFET,MOSFET

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 Difference between active & Passive
components
1.Active devices inject power to the circuit, whereas
passive devices are incapable of supplying any
energy.
2. Active devices are capable of providing power
gain, and passive devices are incapable of providing
power gain.
3.Active devices can control the current (energy)
flow within the circuit, whereas passive device
cannot control it.
4. An external power is required to start basic
operation of an active device where no extra power
is used for passive device.
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 Introduction to semiconductor physics

parameter Conductor Semi insulator

conductor
No. of valance 3 or less than 3 4 5 or more
electrons than 5
conductivity high medium negligible

Semi Conductor Types

Intrinsic Extrinsic

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P type N type 17
 Semi-conductor types
Intrinsic Extrinsic
Semi- Dopping Semi-
Conductor Conductor

Intrinsic P Type
Trivalent
Semi- Impurity Semi-
Conductor Conductor

Intrinsic N Type
Pentavalent
Semi- Semi-
Conductor Impurity
Conductor

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 N type semi-conductor

Pentavalent
(Donor)
impurity
Arsenic (As)
Phosphorus (P)
Antimony(Sb)
Bismuth(Bi)

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 P type semi-conductor

Trivalent
(Acceptor)
impurity

Boron (B)
Indium (In)
Gallium(Ga)

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 P-N Junction
(Diode)

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 Diode Working
Forward Bias

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 Reverse Bias

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 Voltage Current Characteristic

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 Currents in a P-N junction

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 Forward and reverse currents

 qV D

ID  IS 
 e nkT
 1

 
Ideal Diode Equation
Where,
ID and VD are the diode current and voltage, respectively
q is the charge on the electron
Is=reverse saturation current
n is the ideality factor: n = 1 for indirect semiconductors (Si, Ge,
etc.) n = 2 for direct semiconductors (GaAs , InP,
etc.)
k is Boltzmann’s constant
T is temperature in Kelvin
kT/q is also known as Vth, the thermal voltage. At 300K (room
temperature),kT/q = 25.9mV

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 Simplification
• When VD is negative

I D ~ I S
• When VD is positive

qVD
ID ~ ISe nkT

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 Diode as a Switch

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 Diode as Rectifier

• It is a circuit which converts AC into pulsating DC

Rectifier
FWR
FWR
HWR Centre
Bridge
Tap
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 Half Wave Rectifier

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 Center Tapped –Full Wave Rectifier

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 Bridge Rectifier

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 Comparison of HWR and FWR

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 Special Purpose Diode: Zener Diode

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 Special Purpose Diode: Zener Diode
• Features:
Uses the relatively constant
reverse breakdown voltage
to produce a voltage reference.

Breakdown voltage is called

the Zener voltage, VZ

Output voltage of circuit

shown is equal to VZ despite
variations in input voltage V

A resistor is used to limit

the current in the diode

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 Difference between zener & PN Junction
Diodes

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 Zener Diode as Voltage Regulator

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 Zener diode as Voltage Limiter

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 Difference between Avalanche and Zener
breakdown

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 Light Emitting Diode (LED)

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 Special-Purpose Diodes
• Light-emitting diodes
• discussed earlier when we looked at light actuators

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 LED Working

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 Photo Diode

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 Photo Diode Characteristics

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 Key Points
• Diodes allow current to flow in only one direction
• At low temperatures semiconductors act like
insulators
• At higher temperatures they begin to conduct
• Doping of semiconductors leads to the production of
p-type and n-type materials
• A junction between p-type and n-type semiconductors
has the properties of a diode
• Silicon semiconductor diodes approximate the
behavior of ideal diodes but have a conduction voltage
of about 0.7 V
• There are also a wide range of special purpose diodes
• Diodes are used in a range of applications
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