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Dr.

Dung Trinh HCMUT / 2020

Electronic Circuits
Chapter 1: Diode

Dr. Dung Trinh

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Dr. Dung Trinh HCMUT / 2020

Content
 Semiconductor basics
 PN Junction Diode
 Zener Diodes – Regulation Circuit
 Rectifier Circuits
 Limiting Circuits
 Clampers
 Voltage Multiplier

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Semiconductor Basics
Problem of Resistance: depends very much on
the physical size of the material being measured as
well as the material out of which it is made.

We want to be able to define the material in


such a way as to indicate its ability to either
conduct or oppose the flow of electrical current
through it no matter what its size or shape
happens to be  Resistivity

Resistivity (Điện trở suất) is generally given


the Greek symbol of ρ, (Rho) and is measured in
Ohms per meter, (Ω/m)

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Semiconductor Basics
Energy Band: each electron has a different energy level. These different energy
levels with continuous energy variation form are called as energy bands.
Valence Band: the energy band, which includes the energy levels of the valence
electrons.
Conduction Band: the energy band above the valence band.

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Semiconductor Basics
Conductors: are materials that have a low value of resistivity allowing them to
easily pass an electrical current.
Examples:
Metals : Copper, Aluminium, Silver, etc
Non metals : Carbon

Insulators: are the exact opposite of conductors. Insulators also have very high
resistivity, ~106 Ohm/m .
Examples: marble, fused quartz, p.v.c. plastics, rubber, etc

Semi-conductors: have electrical properties somewhere in the middle, between


those of a "Conductor" and an "Insulator“. They are not good conductors nor good
insulators (hence their name semi-conductors)
Examples: Silicon, Germanium

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Semiconductor Basics
Intrinsic Semi-conductors: (undoped semiconductor or i-type semi-conductor) is
a pure semiconductor without any significant dopant species present

Extrinsic Semi-conductors: small amount of a suitable impurity is added to the


pure semiconductor to improve its conductivity
There are two types of dopants used in
doping the tetravalent Si or Ge:
Pentavalent- Valency 5
Arsenic (As)
Antimony (Sb)
Phosphorous (P)
Trivalent – Valency 3
Indium (In)
Boron (B)
Aluminium (Al)

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Semiconductor Basics

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Semiconductor Basics
n-type semiconductors: an impurity atom such as Arsenic, Antimony or
Phosphorus is introduced into the crystalline structure. These atoms have five outer
electrons in their outermost co-valent bond to share with other atoms and are
commonly called "Pentavalent" impurities.

This allows four of the five


electrons to bond with its
neighboring silicon atoms leaving
one "free electron" to move
about when an electrical voltage
is applied (electron flow).

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Semiconductor Basics
p-type semiconductors: a "Trivalent" (3-electron) impurity such as Aluminum,
Boron or Indium is introduced into the crystalline structure. Only three valence
electrons are available in the outermost covalent bond meaning that the fourth
bond cannot be formed.

There is a gap left in one of the


covalent bonds. This vacancy acts as
a hole that tends to accept electrons
to fill the gap. Thus, trivalent
impurities are called acceptor
impurities

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PN Junction Diode
When two semiconductors of p and n types are brought into contact, they form
what is called a p-n junction

Basic Structure

Symbol

Some of the free electrons move across the junction to fill up the holes in the P-
type material.
Eventually a state of equilibrium will occur producing a "Potential Barrier" zone
around the area of the junction.
The area around the junction is now called the Depletion Layer (Miền nghèo)

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PN Junction Diode

Typical Diode Packages Surface-mount Diode Packages

The anode (A) and cathode (K) are indicated The SOD and SMA types have a band on one
on a diode in several ways, depending on the end to indicate the cathode.
type of package. The cathode is usually marked The SOT type is a three-terminal package in
by a band, a tab, or some other feature. which there are either one or two diodes.

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PN Junction Diode
Biasing: there are 3 possible "biasing" conditions for a standard Junction Diode
- Zero Bias : no external potential energy is applied to the PN-junction
- Reverse Bias : a positive voltage is applied to the N-type material and a
negative voltage is applied to the P-type material
- Forward Bias : a negative voltage is applied to the N-type material and a
positive voltage is applied to the P-type material

Potential Barrier: Silicon (~0.7V),


Germanium (~0.3V).
If the external voltage becomes
greater than the value of the potential
barrier, current will start to flow

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V-I Characteristics
Current – Voltage Characteristics of a PN Junction Diode:

Small forward bias voltage (𝑽𝑭 < 𝟎. 𝟕𝑽)

𝒗𝑫
𝒊𝑫 = 𝒇(𝒗𝑫 ) = 𝑰𝑺 𝒆 𝒏𝑽𝑻

Forward bias reaches and remain constant


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V-I Characteristics
Current – Voltage Characteristics of a PN Junction Diode:

𝑣𝐷
𝑖𝐷 = 𝑓(𝑣𝐷 ) = 𝐼𝑆 𝑒 𝑛𝑉𝑇

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Diode Model
Exponential Model Piecewise Linear Model Constant Voltage Drop

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Diode Model
The following circuit has 2 elements: 𝑣𝐷
Nonlinear element: 𝑖𝐷 = 𝑓(𝑣𝐷 ) = 𝐼𝑆 𝑒 𝑛𝑉𝑇
Thevenin equivalent of linear portion: 𝑣𝐷 = 𝑣𝑇 − 𝑖𝐷 𝑅𝑇 (DCLL)

When the two parts of the circuit are connected, these two relations are satisfied
simultaneously, and the circuit will operate at the point given by solution of the
equations.
Equations can be solved:
Analytically : exponential nature of iD  expensive computation
Graphically : plotting equations on the same axes.

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Diode Model
Example 1 : Determine the current 𝐼𝐷 and the diode voltage 𝑉𝐷 for the following
circuit with the 𝑉𝐷𝐷 = 5𝑉 and 𝑅 = 1𝑘Ω. Assume that the diode has a current of
1mA at a voltage of 0.7V and that its voltage drop changes by 0.1V for every decade
change in current.

Example 2 : Repeat example 1 using the piecewise-linear model


whose parameters are 𝑉𝐷0 = 0.65𝑉, 𝑟𝐷 = 20Ω.

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Exercise 1: For the circuits shown in following figure using ideal diodes, find the
values of the voltages and currents indicated

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Use of the Diode in Voltage Regulation


A further application of the diode small-signal model is found in a popular
diode application, namely, the use of diodes to create a regulated voltage.
A voltage regulator is a circuit whose purpose is to provide a constant dc
voltage between its output terminals.
The output voltage is required to remain as constant as possible in spite of:
a. changes in the load current drawn from the regulator output terminal
b. changes in the dc power-supply voltage that feeds the regulator circuit.

Example 3: Consider the following circuit. A string of


three diodes is used to provide a constant voltage of
about 2.1 V. We want to calculate the percentage
change in this regulated voltage caused by
(a) A ±10% change in the power-supply voltage and
(b) connection of a 1-kΩload resistance.

𝑉𝑇
Note: 𝑟𝐷 = , 𝑉𝑇 = 25𝑚𝑉
𝐼𝐷
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Zener Diodes
The very steep i–v curve that the diode
exhibits in the breakdown region and the
almost-constant voltage drop that this
indicates, suggest that diodes operating in the
breakdown region can be used in the design of
voltage regulators.

Special diodes are manufactured to operate


specifically in the breakdown region.

Corresponding to current change Δ𝐼 the


zener voltage changes by Δ𝑉, which is related
to Δ𝐼 by:
Δ𝑉 = 𝑟𝑧 Δ𝐼
𝑟𝑧 : incremental resistance of the zener diode at operating point Q.
𝑟𝑧 is in the range of a few ohms to a few tens of ohms.

𝑉𝑍 : in the range of a few volts to a few hundred volts.


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Zener Diodes
The device can be modeled as the following figure.

𝑉𝑍0 denotes the point at which the straight line of slope


intersects the voltage axis. The equivalent circuit model
can be analytically described by:
𝑉𝑍 = 𝑉𝑍0 + 𝑟𝑍 𝐼𝑍

Example 4: The 6.8 V zener diode in the circuit is


specified to have 𝑉𝑍 = 6,8𝑉 at 𝐼𝑍 = 5𝑚𝐴, 𝑟𝑍 = 20 Ω,
and 𝐼𝑍𝐾 = 0,2𝑚𝐴. The supply voltage 𝑉 +is nominally
10V but can vary by ±1 V

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Zener Diodes
Example 4 (cont):
a. Find 𝑉0 with no load and with 𝑉 + at its nominal value.
b. Find the change in 𝑉0 resulting from the ±1V change in 𝑉 +. Note that , usually
expressed in mV/V, is known as line regulation.
c. Find the change in 𝑉0 resulting from connecting a load resistance 𝑅𝐿 that draws
a current 𝐼𝐿 =1 mA, and hence find the load regulation in mV/mA.
d. Find the change in 𝑉0 when 𝑅𝐿 = 2 𝑘Ω.
e. Find the value of 𝑉0 when 𝑅𝐿 = 0.5 𝑘Ω.
f. What is the minimum value of 𝑅𝐿 for which the diode still operates in the
breakdown region?

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Zener Diodes
Exercise 2: Provide two designs of shunt regulators utilizing the 1N5235 zener
diode, which is specified as follows: 𝑉𝑧 = 6.8𝑉 and 𝑟𝑧 = 5Ω for 𝐼𝑧 = 20𝑚𝐴; at 𝐼𝑧 =
0.25mA (nearer the knee), 𝑟𝑧 = 750Ω. For both designs, the supply voltage is
nominally 9𝑉 and varies by ±1𝑉. For the first design, assume that the availability of
supply current is not a problem, and thus operate the diode at 20𝑚𝐴. For the
second design, assume that the current from the raw supply is limited, and
therefore you are forced to operate the diode at 0.25𝑚𝐴. For the purpose of these
initial designs, assume no load. For each design find the value of R and the line
regulation.

Exercise 3: Design a 7.5𝑉 zener regulator circuit using a 7.5𝑉 zener specified at
12 𝑚𝐴. The zener has an incremental resistance 𝑟𝑧 = 30 Ω and a knee current of
0.5 𝑚𝐴. The regulator operates from a 10𝑉 supply and has a 1.2𝑘Ω load.
What is the value of 𝑅 you have chosen? What is the regulator output voltage
when the supply is 10% high? Is 10% low? What is the output voltage when both
the supply is 10% high and the load is removed? What is the smallest possible load
resistor that can be used while the zener operates at a current no lower than the
knee current while the supply is 10% low? What is the load voltage in this case?
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Zener Diodes
Exercise 4: A zener shunt regulator employs a 9.1𝑉 zener diode for which 𝑉𝑍 =
9.1𝑉 at 𝐼𝑍 = 9 𝑚𝐴, with 𝑟𝑍 = 30Ω and 𝐼𝑍𝐾 = 0.3𝑚𝐴. The available supply voltage
of 15𝑉 can vary as much as ±10%. For this diode, what is the value of 𝑉𝑍0 ?
a. For a nominal load resistance 𝑅𝐿 = 1𝑘Ω and a nominal zener current of 10𝑚𝐴,
what current must flow in the supply resistor R?
b. For the nominal value of supply voltage, select a value for resistor 𝑅, specified to
one significant digit, to provide at least that current. What nominal output voltage
results?
c. For a ±10% change in the supply voltage, what variation in output voltage
results?
d. If the load current is reduced by 50%, what increase in 𝑉𝑜 results?
e. What is the smallest value of load resistance that can be tolerated while
maintaining regulation when the supply voltage is low?

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Rectifier Circuits
One of the most important applications of diodes is in the design of rectifier circuits.

Figure: Block diagram of a dc power supply

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Rectifier Circuits - Transformer

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Rectifier Circuits – Half wave Rectifier


Utilize alternate half-cycles of the input sinusoid. The circuit of a half-wave
rectifier.is shown below

Using the constant-voltage-drop diode model, we obtain:


𝑣0 = 0 𝑣𝑠 < 𝑉𝐷
𝑣0 = 𝑣𝑠 − 𝑉𝐷 𝑣𝑠 ≥ 𝑉𝐷

𝑷𝑰𝑽 = 𝑉𝑆 𝑝𝑒𝑎𝑘
Peak inverse voltage (PIV): the maximum inverse voltage that the diode must be
able to withstand without breakdown, determined by the largest reverse voltage
that is expected to appear across the diode.

Transfer
Characteristic of Input and Output
Rectifier Circuit Waveform

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Rectifier Circuits – Full wave Rectifier


The transformer secondary winding is center-tapped to provide two equal
voltage across the two halves of the secondary winding with the polarities
indicated.

Center-tap rectifier - Circuit

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Rectifier Circuits – Full wave Rectifier


Ideal diodes:

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Rectifier Circuits – Full wave Rectifier


Diodes with 𝑽𝑫 :

Center-tap rectifier - Circuit Input and Output Waveform

𝑷𝑰𝑽 = 2𝑉𝑆 − 𝑉𝐷

Input and Output Waveform


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Rectifier Circuits – Bridge Rectifier


Does not require a center-tapped transformer, a distinct advantage over the full-
wave rectifier circuit.
Requires four diodes as compared to two in the previous circuit.

𝑷𝑰𝑽 = 𝑉𝑆 − 2𝑉𝐷 + 𝑉𝐷 = 𝑉𝑆 − 𝑉𝐷

Bridge rectifier - Circuit Input and Output Waveform

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Rectifier Circuits – Bridge Rectifier

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Center-Tap vs Bridge Rectifier

Rectifier with transformer Bridge Rectifier


Require 2 diodes and a
Require 4 diodes
transformer: expensive
PIV = 2VS – VD PIV = VS – VD
One diode on the conduction path Two diodes on the conduction path

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Rectifier Circuits
Exercise 5: Consider the half-wave rectifier circuit with the diode. Let 𝑣𝑆 be a
sinusoid with 12𝑉 peak amplitude, and let 𝑅 = 1.5 𝑘Ω. Use the constant-voltage
drop diode model with 𝑉𝐷 = 0.7 𝑉.
(a) Sketch the transfer characteristic.
(b) Sketch the waveform of 𝑣0 .
(c) Find the average value of 𝑣0 .
(d) Find the peak current in the diode.
(e) Find the PIV of the diode.

Exercise 6: A half-wave rectifier circuit with a 1𝑘Ω load operates from a 120𝑉
(rms) 60𝐻𝑧 household supply through a 10-to-1 step-down transformer. It uses a
silicon diode that can be modeled to have a 0.7𝑉 drop for any current.
What is the peak voltage of the rectified output? For what fraction of the cycle
does the diode conduct? What is the average output voltage? What is the average
current in the load?

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Rectifier Circuits
Exercise 7: A full-wave rectifier circuit with a 1𝑘Ω load operates from a 120𝑉 (rms)
60𝐻𝑧 household supply through a 10-to-1 center-tapped secondary winding. It
uses two silicon diodes that can be modeled to have a 0.7𝑉 drop for any currents.
What is the peak voltage of the rectified output? For what fraction of a cycle does
each diode conduct? What is the average output voltage? What is the average
current in the load?

Exercise 8: A full-wave bridge rectifier circuit with a 1𝑘Ω load operates from a
120𝑉 (rms) 60𝐻𝑧 household supply through a 10-to-1 center-tapped secondary
winding. It uses two silicon diodes that can be modeled to have a 0.7𝑉 drop for
any currents.
What is the peak voltage of the rectified output? For what fraction of a cycle does
each diode conduct? What is the average output voltage? What is the average
current in the load?

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Rectifier with a Filter Capacitor

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Rectifier with a Filter Capacitor


𝑉𝑖𝑛 > 𝑉𝐷 : the diode conducts and the capacitor is
charged → 𝑉𝑜𝑢𝑡 = 𝑉𝑖𝑛 − 𝑉𝐷

𝑉𝑖𝑛 < 𝑉𝐷 : the diode becomes reverse biased


→ 𝑉𝑜𝑢𝑡 = 𝑉𝑃 − 𝑉𝐷

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Rectifier with a Filter Capacitor


Practical situation: a load resistor 𝑅𝐿 is
connected across the capacitor 𝐶1 .

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Rectifier with a Filter Capacitor

𝑣
The waveforms of the load current: 𝑖𝐿 = 0 𝑅
𝑑𝑣𝐼
The diode current: 𝑖𝐷 = 𝑖 𝐿 + 𝑖𝐶 = 𝐶 + 𝑖𝐿
𝑑𝑡
The following observations are in order:
1. The diode conducts for a brief interval, Δt and supplies the capacitor with
charge equal to that lost during the much longer discharge interval.
2. During the diode-off interval, the capacitor C discharges through R, and thus
𝑣0 decays exponentially with a time constant 𝐶𝑅.

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Rectifier with a Filter Capacitor

−𝑡
During the diode-off interval, 𝑣0 can be expressed as: 𝑣0 = 𝑉𝑃 𝑒 𝑅𝐶

−𝑇
At the end of the discharge interval we have: 𝑉𝑃 − 𝑉𝑟 ≈ 𝑉𝑃 𝑒 𝑅𝐶

−𝑇
Now, since 𝐶𝑅 ≫ 𝑇, we can use the approximation: 𝑒 𝑅𝐶 ≈ 1 − 𝑇 𝑅𝐶 then

𝑇 𝑉𝑃 𝐼𝐿
𝑉𝑟 ≈ 𝑉𝑃 = =
𝑅𝐶 𝑓𝑅𝐶 𝑓𝐶

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Rectifier with a Filter Capacitor

We can determine the conduction interval Δ𝑡 from: 𝑉𝑃 𝑐𝑜𝑠 𝜔Δ𝑡 = 𝑉𝑃 − 𝑉𝑟


2𝑉𝑟
Since (𝜔Δ𝑡) is a small angle: 1 Then: 𝜔Δ𝑡 ≈
𝑐𝑜𝑠 𝜔Δ𝑡 ≈ 1 − 𝜔Δ𝑡 2 𝑉𝑃
2
To determine the average diode current during conduction, the charge that
diode supplies to the the capacitor is computed:
𝑄𝑠𝑢𝑝𝑝𝑙𝑖𝑒𝑑 = 𝑖𝐶𝑎𝑣 Δ𝑡 = 𝐶𝑉𝑟 2𝑉𝑟
→ 𝑖𝐷𝑎𝑣 = 𝑖𝐿 1 + 𝜋
𝑖𝐶𝑎𝑣 = 𝑖𝐷𝑎𝑣 − 𝑖𝐿 𝑉𝑃

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Rectifier with a Filter Capacitor

Example 5: Consider a peak rectifier fed by a 60𝐻𝑧 sinusoid having a peak value
𝑉𝑃 = 100𝑉. Let the load resistance 𝑅 = 10 𝑘Ω. Find the value of the capacitance
𝐶 that will result in a peak-to-peak ripple of 2𝑉. Also, calculate the fraction of the
cycle during which the diode is conducting and the average and peak values of the
diode current.

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Diode Limiter (Mạch xén)

General transfer characteristic


of a limiter circuit

Applying a sine wave to a limiter


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Diode Limiter

Diode positive limiter: The diode is forward-biased during the positive


alternation (above 0.7 V) and reverse-biased during the negative alternation.

Diode negative limiter: The diode is forward-biased during the negative


alternation (below –0.7 V) and reverse-biased during the positive alternation.
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Biased Limiter

Biased Limiter: The level to which an ac voltage is limited can be


adjusted by adding a bias voltage 𝑉𝐵𝐼𝐴𝑆 , in series with the diode.

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Biased Limiter
Example 6: The following figure shows a circuit combining a positive limiter with a
negative limiter. Determine the output voltage waveform.

Example 7: Describe the output


voltage waveform for the diode
limiter in the following figure

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Limiting Circuits – Transfer Characteristics

A variety of basic limiting circuits.

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Diode Limiter
Example 8: Assuming the diodes to be ideal, describe the transfer characteristic of
the following circuit:

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Diode Limiter
Exercise 9: Sketch and clearly label the transfer characteristic of the following
circuit for −20𝑉 ≤ 𝑣𝑖 ≤ 20𝑉. Assume that the diodes can be represented by the
constant-voltage drop model with 𝑉𝐷 = 0.7 𝑉. Also assume that the zener voltage
is 8.2 V and that 𝑟𝑧 is negligibly small.

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Diode Clampers (Mạch Kẹp)


A clamper : adds a dc level to an ac voltage. Clampers are sometimes known as
dc resistors.

 Operation of the circuit:


• When the input voltage initially goes negative, the diode is forward-
biased, allowing the capacitor to charge to near the peak of the input
𝑽𝑷(𝒊𝒏) − 𝟎. 𝟕
• Just after the negative peak, the diode is reverse-biased. This is because
the cathode is held near by the charge on the capacitor.

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Diode Clampers (Mạch Kẹp)


 Operation of the circuit (cont):
• The capacitor can only discharge through the high resistance of RL. The
amount that is discharged depends on the value of RL.
• If the capacitor discharges during the period of the input wave, clamping
action is affected.
• An RC time constant of ten times the period will have a small amount of
distortion at the ground level due to the charging current.

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Diode Clampers (Mạch Kẹp)

Example 10: What is the output voltage that we would expect to observe across RL
in the clamping circuit of the following figure.

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Voltage Multiplier (Nhân áp)


 Voltage Doubler (Half-wave Voltage Doubler):
• A voltage doubler is a voltage multiplier with a multiplication factor of
two.
• During the positive half-cycle of the secondary voltage: diode D1 is
forward-biased and D2 is reverse-biased (a).
• During the negative half-cycle of the secondary voltage: diode D1 is
reverse-biased and D2 is forward-biased (b).
• Applying Kirchhoff’s law around the loop, the voltage across C2 is:

𝑽𝑪𝟏 − 𝑽𝑪𝟐 + 𝑽𝑷 = 𝟎 → 𝑽𝑪𝟐 = 𝑽𝑷 + 𝑽𝑪𝟏 ≃ 𝟐𝑽𝑷

(a) (b)
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Voltage Multiplier (Nhân áp)


 Voltage Doubler (Full-wave Voltage Doubler):
• During the positive half-cycle of the secondary voltage: D1 is forward-
biased and C1 charges to approximately Vp (a).
• During the negative half-cycle of the secondary voltage: D2is forward-
biased and C2charges to approximately Vp (b).
• The output voltage, 2Vp, is taken across the two capacitors in series.

(a) (b)
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Voltage Multiplier (Nhân áp)


 Voltage Tripler :

 Voltage Quadrupler:

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Datasheet

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Datasheet

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Dr. Dung Trinh HCMUT / 2020

Datasheet

58
Dr. Dung Trinh HCMUT / 2020

Q&A

59

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