SEMICONDUCTOR DIODE

An electrical conductor is a material that

An electrical insulator is a material our Semiconductor is an element that behaves
offers little resistance to the movement of
internal electrical charges cannot move as a conductor or as an insulator depending
electric charge. Its atoms are
causing a low magnitude of current under the on various factors, for example: the electric
characterized by having few electrons in
influence of an electric field, a difference from or magnetic field, the pressure, the
their valence shell, so it does not take
conductive and semiconductor materials, which radiation that affects it, or the temperature
much energy for them to jump from one
easily conduct an electric current. of the environment in which it is located.
atom to another.
 Intrinsic Vs Extrinsic Materials

Intrinsic Semiconductors
Extrinsic semiconductors
A semiconductor material made only from a
To improve the properties of semiconductors,
single type of atom is called an intrinsic
they undergo a doping process (called doping),
semiconductor.
consisting of introducing atoms of other
elements in order to increase their
The most used historically are germanium (Ge)
conductivity. The semiconductor obtained will
and silicon (Si); the latter being the most
be called the extrinsic semiconductor.
widely used (as it is much more abundant and
According to the impurity (called dopant) we
can work at higher temperatures than
distinguish:
germanium).
SEMICONDUCTOR TYPE P

Semiconductor type P: trivalent elements (3

valence electrons) such as Boron (B), Indium (In)
or Gallium (Ga) are used as dopants. Since they
do not provide the 4 electrons necessary to
establish the 4 covalent bonds, an electron defect
(to form the 4 covalent bonds) appears in the red
lens. In this way, holes are created that accept
the passage of electrons that do not belong to the
crystal lattice. Thus, the P-type material is also
called the gap donor (or electron acceptor).
SEMICONDUCTOR TYPE N

Semiconductor type N: Pentavalent

elements (with 5 valence electrons) such
as Phosphorus (P), Arsenic (As) or
Antimony (Sb) are used as impurities.
The donor contributes excess electrons,
which, since they are not linked, will
easily move through the crystal lattice,
increasing their conductivity. Thus, the
N-type material is also called an electron
donor.
 P-N MATERIAL

One of the crucial keys in solid state electronics is the nature of the P-N junction. When the
p-type and n-type materials are brought into contact with each other, the bond behaves
very differently than each of the materials does on its own. Specifically, current will flow
easily in one direction (forward bias) but not in the other (reverse bias), creating a basic
diode. This non-reversible behavior arises from the nature of the cargo transport process
in the two types of materials.

The empty circles on the left side of the top right junction represent "holes" or electron
deficiencies in the network, which can act as carriers of positive charge. Solid circles to
the right of the junction represent the electrons available from the n-type dopant. Near the
junction, electrons diffuse through it and combine with the holes, creating a "region of
depletion." The energy level sketch at the top right is a way to visualize the equilibrium
condition of the P-N junction. The upward direction on the diagram represents the
increasing energy of electrons.
 P-N Forward Bias

When we connect p-type region of a junction with the

positive terminal of a voltage source and n-type region
with the negative terminal of the voltage source, then
the junction is said to be forward biased. At this
condition, due to the attraction of positive terminal of
source, electrons which participated in covalent bond
creations in p-type material, will be attracted towards
the terminal.
 P-N Reverse Bias

When positive terminal of a voltage source is connected to

the n-type region and the negative terminal of the source is
connected to the p-type region then the pn junction is said
to be in reverse biased condition. When there is no voltage
applied across the p n junction, the potential developed
across the junction is 0.3 volts at 25oC for germanium pn
junction and 0.7 volts at 25oC for silicon p n junction.
 Symbol and characteristic curve of diode

With direct polarization, the carrier electrons increase

their speed and collide with heat-generating atoms that can
reach the temperature of the semiconductor. This increase
activates conduction in the diode.
• Vu threshold voltage
• Vs Saturation voltage
• Vr Breakdown Voltage
• OA Low forward bias zone, small current
• AB Driving area
• OC Reverse saturation current
• From C, avalanche zone