Basic Electronics Terms
(midterms)
Introduction to Semiconductors
Atom
- All matter is made up of atoms
- It is the smallest particle of an element that
retains the characteristics of that element
- All elements in periodic table of elements
are arranged according to their atomic
number
-Atomic number equals the number of
protons and also to electrons.
-Maximum number of electrons that exist in
each shell can be calculated using the
formula, Ne = 2n2
- The outermost shell is known as the
valence shell and the electrons in this shell
are called valence electrons.
- Electrons that are in orbits farther from the
nucleus have higher energy and less tightly
bound to the atom than those closer to
nucleus.
- If a valence electron acquires sufficient
amount of energy, called ionization energy,
it escapes the outer shell and atom’s
influence.
Ionization – process of losing a valence
electron
Free electrons – escaped valence electron
Semiconductors, Conductors, and
Insulators
Insulators – material that does not conduct
electrical current under normal condition.
Valence electrons are tightly bound to the
atoms.
Conductors – materials that easily conduct
electrical current
Semiconductors – materials that is
between conductors and insulators in its
ability to conduct electrical current
Energy gap or band gap
- The amount of energy that a valence
electron must have in order to jump from the
valence band to the conduction band.
Semiconductors
Semiconductors - elements having a
conductivity between a good conductor and
insulator.
2 Classes of Semiconductor:
Single crystal – have repetitive crystal
structure (Example: Ge and Si)
Compound – constructed of two or more
semiconductor materials of different atomic
structures. (Example: GaAs, CdS, GaN,
GaAsP)
In 1939, diodes was discovered followed by
the discovery of transistor in 1947. Both
electronic device was made in Germanium.
Germanium
- Relatively easy to find
- Available in large quantities
-Relatively easy to refine to obtain very high
levels of purity which is an important aspect
in the fabrication process
Silicon
- 1954, first silicon transistor was introduced
- Have improved temperature sensitivity •
One of the most abundant materials on
earth
- Has the benefit of years of development
- Is the leading semiconductor materials for
electronic components and ICs
Both Silicon and Germanium has 4 valence
electron. But the valence electron of
Germanium is in the 4th shell while Silicon
is in the 3rd shell, closer to nucleus.
Covalent Bonding – Bonding of atoms
strengthened by the sharing of electrons.
Current in a semiconductor
- For every electron raised to conduction
band by external energy, there is one hole
left in the valence band, creating what we
called electron-hole pair.
- When electrons in conduction band loses
energy, it goes back to the hole which we
called recombination.
- The valence electrons are attracted to the
positive ions, keeping the positive ions
together and forming the metallic bond.
N-type and P-type Materials
- Since semiconductors are generally poor
conductors, their conductivity can be
drastically increased by the controlled
addition of impurities to the intrinsic (pure)
semiconductive material.
- This process, called doping, increases the
number of current carriers (electrons or
holes). The two categories of impurities are
n-type and p- type.
N-type material
- To increase the number of conduction-
band electrons in intrinsic silicon,
pentavalent impurity atoms are added.
- These are atoms with five valence
electrons such as arsenic (As), phosphorus
(P), bismuth (Bi), and antimony (Sb).
- Pentavalent atom gives up an electron, it
is often called a donor atom.
- Majority carriers are electrons, minority
carrier are holes.
P-type material
- To increase the number of holes in intrinsic
silicon, trivalent impurity atoms are
added.
- These are atoms with three valence
electrons such as boron (B), indium (In),
and gallium (Ga).
- Trivalent atom can take an electron, it is
often referred to as an acceptor atom.
- Majority carriers are holes, minority
carrier are electrons.
Diodes
Diode
- It was formed when a block of silicon was
doped part of it with trivalent and other part
with a pentavalent impurity.
- is a device that conducts current only in
one direction.
- As electrons leave the n region, a layer of
positive ions was formed.
- When this free electrons combined with
holes in the p region, this create negative
ions.
Depletion region
- is a very thin layer compared to the p -
region and n - region.
- A point is reached when the total negative
charge repels any further diffusion of
electrons into the p region and the diffusion
stops.
- act as barrier
Forces between opposite charges form a
field of charges called an electric field.
Barrier potential - is the amount of voltage
required to move an electron through the
electric field.
Typical Values of Barrier Potential at
25°C :
- Silicon = 0.7 V
- Germanium = 0.3 V
Diode biasing
BIAS – it refers to the use of a DC voltage
to establish certain operating conditions for
an electronic device.
- NO APPLIED BIAS (V = 0V) – no external
voltage is applied across the two terminals
of the device. I = 0A, therefore the device
acts like an isolated resistor.
-To bias a diode, you apply a dc voltage
across it.
Diode: Forward Bias
Requirement for forward bias condition:
1. The negative side (-) is connected to the
n region and the positive side is connected
to the p region.
2. It must be greater than the barrier
potential.
- The holes in the p region provide the
medium or “pathway” for these valence
electrons to move through the p region.
- As more electrons flow into the depletion
region, the number of positive ions is
reduced.
Diode: Reverse Bias
- Reverse bias is the condition that
essentially prevents current through the
diode.
- The negative side (-) is connected to the p
region and the positive side is connected to
the n region.
-The limiting resistor is not important in
reverse bias since there is essentially no
current.
- unlike charges attract, the positive side of
the bias-voltage source “pulls” the free
electrons, which are the majority carriers in
the n region, away from the pn junction.
Reverse Current
- Extremely small current that exists in
reverse bias caused by the minority carriers
in the n and p regions that are produced by
the thermally generated electron-hole pairs.
- If the external reverse-bias voltage is
increased to a value called the breakdown
voltage, the reverse current will drastically
increase.
- The high reverse-bias voltage imparts
energy to the free minority electrons so that
they speed through the p region, they
collide with atoms with enough energy to
knock valence electrons out of orbit and into
the conduction band.
- As these high-energy electrons go through
the depletion region, they have enough
energy to go through the n region as
conduction electrons, rather than combining
with holes
- These multiplication of conduction
electrons is known as avalanche resulting
in a very high reverse current that can
damage the diode because of excessive
heat dissipation.
Knee Voltage or Cut-in voltage - The
voltage at which the forward diode current
increases rapidly
Dynamic Resistance
- the resistance of the forward-biased diode
is not constant over the entire curve.
- the resistance changes as you move along
the V-I curve, it is called dynamic or ac
resistance
Shockley's diode equation - is used to
model the voltage-current (V-I)
characteristic of a semiconductor diode.
- It describes the relationship between the
current flowing through the diode and the
voltage across it.
Reverse saturation current (Is )
• Also known as reverse current.
• The current that exists under reverse-bias
condition
• It is seldom more than a few
microamperes and typically in nA, except for
high power devices.
• The direction of IS is against the arrow of
the diode symbol
Zener breakdown
• contribute to the sharp change in the
characteristic of a diode.
• It occurs because there is a strong
electric field in the region of the junction
that can disrupt the bonding forces within
the atom and “generate” carriers.
• The sharp change in the characteristic at
any level is called the Zener region
• Diodes employing this unique portion of
the characteristic of a p–n junction are
called Zener diodes.
Resistance Level
DC or Static Resistance
• Typically, the dc resistance of a diode in
the active (most utilized) will range from
about 10 to 80 ohms.
AC or Dynamic Resistance
• With no applied varying signal, the point of
operation would be the Q- point
• The designation Q-point is derived from
the word quiescent, which means “still or
unvarying.”
Average ac resistance - is the resistance
determined by a straight line drawn between
the two intersections established by the
maximum and minimum values of input
voltage.
Diode Applications
Load-Line Analysis - is used to analyze
diode circuit using its actual characteristics.
• Finding the Q -point of a diode is
important to identify the voltage and current
levels at which the component operates in
steady - state condition
Rectifiers
The process of removing one-half the input
signal to establish a dc level is called half-
wave rectification.
The average value of the half-wave
rectified output voltage is the value you
would measure on a dc voltmeter.
Peak Inverse Voltage (PIV)
• The peak inverse voltage (PIV) equals the
peak value of the input voltage, and the
diode must be capable of withstanding at
least this amount of repetitive reverse
voltage.
• A diode should be rated at least 20%
higher than the PIV
• The PIV occurs at the peak of each half-
cycle of the input voltage when the diode is
reverse-biased.
A transformer is often used to couple the
ac input voltage from the source to the
rectifier as shown in the figure.
Advantages of transformer coupling:
1. It allows the source voltage to be stepped
up or down as needed.
2. The ac source is electrically isolated from
the rectifier, thus avoiding a shock hazard in
the secondary circuit for lower voltages.
Transformer Coupling
• The amount that the voltage is stepped
up or down is determined by the turns ratio
of the transformer.
• a transformer with a turns ratio less than 1
is a step-down type and one with a turns
ratio greater than 1 is a step-up type.
A full-wave rectifier allows unidirectional
(one-way) current through the load during
the entire 360 of the input cycle,
A center-tapped rectifier is a type of full-
wave rectifier that uses two diodes
connected to the secondary of a center-
tapped transformer.
Clippers and Clampers
Clippers are networks that employ diodes
to “clip” away a portion of an input signal
without distorting the remaining part of the
applied waveform.
• Also known as diode limiters because
they limit or clip the positive part or the
negative part of the input voltage.
SERIES CLIPPERS - series configuration is
defined as one where the diode is in series
with the load.
PARALLEL CLIPPERS - parallel variety
has the diode in a branch parallel to the
load.
A clamper is a network constructed of a
diode, a resistor, and a capacitor that shifts
a waveform to a different dc level without
changing the appearance of the applied
signal.
• Clamping networks have a capacitor
connected directly from input to output with
a resistive element in parallel with the
output signal.
• The diode is also in parallel with the output
signal but may or may not have a series dc
supply as an added element.
Power Supply, Filter and Regulators
Basic DC Power Supply
• DC power supply converts 220V, 60 Hz
ac voltage available at wall outlets into a
constant dc voltage.
• Generally the ac input line voltage is
stepped down to a lower ac voltage with a
transformer
• Transformer changes ac voltages based
on the turns ratio between the primary and
secondary
• Rectifier converts the ac input voltage to a
pulsating dc voltage, called a half-wave
rectified voltage
• The filter eliminates the fluctuations in the
rectified voltage and produces a relatively
smooth dc voltage.
• The regulator is a circuit that maintains a
constant dc voltage for variations in the
input line voltage or in the load.
Filtering is necessary because electronic
circuits require a constant source of a
DC voltage and current to provide power
and biasing for proper operation.
Ripple Voltage
• It is the variation in the capacitor voltage
due to the charging and discharging .
• Ripple is undesirable, thus the smaller the
ripple the better the filtering action is.
The ripple factor is an indication of the
effectiveness of the filter
Voltage Regulators
• Voltage regulation in power supplies is
usually done with integrated circuit voltage
regulators.
• A voltage regulator prevents changes in
the filtered DC voltage due to variations in
input voltage or load.
• While filters can reduce the ripple from
powers supplies to a low value, the most
effective approach is a combination of a
capacitor-input filter used with a voltage
regulator.
• A voltage regulator is connected to the
output of a filtered rectifier and maintains a
constant output voltage (or current)
despite changes in the input, the load
current, or the temperature.
Most regulators are integrated circuits and
have three terminals:
a. input terminal
b. output terminal
c. reference (or adjust) terminal
Percent Regulation
• The breakdown voltage of a zener diode is
set by carefully controlling the doping
level during manufacture.
• Zener diodes are designed to operate in
reverse breakdown.
• Occurs in a zener diode at low reverse
voltages.
Two type of breakdown voltage in zener
diode:
1. Avalanche breakdown – occurs when
VB is > 5V
2. Zener breakdown - occurs when VB is <
5V
Zeners are commercially available with
breakdown voltages from less than 1 V to
more than 250 V with specified tolerances
from 1% to 20%
Zener diode as a regulator Three different
conditions:
1. Fixed supply voltage and load
2. Fixed supply voltage and a variable load
3. Fixed load and a variable supply.

Line regulation
• specifies how much change occurs in the
output voltage for a given change in the
input voltage.
Load regulation
• specifies how much change occurs in the
output voltage over a certain range of load
current values

Zener Diodes
A zener diode is a silicon pn junction device
that is designed for operation in the reverse-
breakdown region.