SOT23 NPN SILICON PLANAR

BCW60 SMALL SIGNAL TRANSISTORS BCW60

ISSUE 2 – AUGUST 1995
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARTMARKING DETAILS
BCW60A – AA BCW60AR – CR
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
BCW60B – AB BCW60BR – DR E
Collector-Emitter V(BR)CEO 32 V IC=2mA C
BCW60C – AC BCW60CR – AR
Breakdown Voltage
BCW60D – AD BCW60DR – BR
Emitter-Base Breakdown V(BR)EBO 5 V IEBO =1µA B
Voltage COMPLEMENTARY TYPE
Collector-Emitter ICES 20 nA VCES =32V BCW61
Cut-off Current 20 µA VCES =32V ,Tamb=150oC
SOT23
Emitter-Base Cut-Off Current IEBO 20 nA VEBO =4V ABSOLUTE MAXIMUM RATINGS.
Collector-Emitter Saturation VCE(sat) 0.12 0.35 V IC=10mA, IB = 0.25mA PARAMETER SYMBOL VALUE UNIT
Voltage 0.20 0.55 V IC= 50mA, IB =1.25mA
Collector-Base Voltage VCBO 32 V
Base-Emitter VBE(SAT) 0.60 0.70 0.85 V IC=10mA, IB=0.25mA
Saturation Voltage 0.70 0.83 1.05 V IC =50mA, IB=1.25mA Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5 V
Base - Emitter Voltage VBE 0.52 V IC=10µA, VCE =5V
0.55 0.65 0.75 V IC=2mA, VCE =5V Continuous Collector Current IC 200 mA
0.78 V IC=50mA, VCE =1V
Base Current IB 50 mA
Static BCW60A 78 IC=10µA, VCE =5V Power Dissipation at Tamb=25°C PTOT 330 mW
Forward hFE 120 170 220 IC=2mA, VCE =5V
Current 50 IC=50mA, VCE =1V Operating and Storage Temperature Range tj:tstg -55 to +150 °C
Transfer BCW60B
Ratio 20 145 IC=10µA, VCE =5V FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
180 250 310 IC=2mA, VCE =5V
70 IC=50mA, VCE =1V hFE Group A hFE Group B hFE Group C hFE Group D
BCW60C
40 220 IC=10µA, VCE =5V Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
250 350 460 IC=2mA, VCE =5V
90 IC=50mA, VCE =1V
BCW60D h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
100 300 IC=10µA, VCE =5V
380 500 630 IC=2mA, VCE =5V h12e 1.5 2 2 3 10-4
100 IC=50mA, VCE =1V h21e 200 260 330 520
Transition Frequency fT 125 250 MHz IC =10mA, VCE =5V h22e 18 30 24 50 30 60 50 100 µS
f = 100MHz
Emitter-Base Capacitance Cebo 8 pF VEBO=0.5V, f =1MHz
SWITCHING CIRCUIT
Collector-Base Capacitance Ccbo 4.5 pF VCBO=10V, f =1MHz
-VBB VCC(+10V)
Noise Figure N 2 6 dB IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
R2 RL
Switching times:
Delay Time td 35 ns 1µsec
Rise Time tr 50 ns IC:IB1:- IB2 =10:1:1mA R1
Turn-on Time ton 85 150 ns R1=5KΩ, R2=5KΩ +10V
Storage Time ts 400 ns VBB =3.6V, RL=990Ω tr < 5nsec
Fall Time tf 80 ns Zin ≥ 100kΩ
Turn-Off Time toff 480 800 ns tr < 5nsec 50Ω Oscilloscope
Mark/Space ratio < 0.01
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle Zs=50Ω
Spice parameter data is available upon request for this device

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 SOT23 NPN SILICON PLANAR
BCW60 SMALL SIGNAL TRANSISTORS BCW60
ISSUE 2 – AUGUST 1995
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARTMARKING DETAILS
BCW60A – AA BCW60AR – CR
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
BCW60B – AB BCW60BR – DR E
Collector-Emitter V(BR)CEO 32 V IC=2mA C
BCW60C – AC BCW60CR – AR
Breakdown Voltage
BCW60D – AD BCW60DR – BR
Emitter-Base Breakdown V(BR)EBO 5 V IEBO =1µA B
Voltage COMPLEMENTARY TYPE
Collector-Emitter ICES 20 nA VCES =32V BCW61
Cut-off Current 20 µA VCES =32V ,Tamb=150oC
SOT23
Emitter-Base Cut-Off Current IEBO 20 nA VEBO =4V ABSOLUTE MAXIMUM RATINGS.
Collector-Emitter Saturation VCE(sat) 0.12 0.35 V IC=10mA, IB = 0.25mA PARAMETER SYMBOL VALUE UNIT
Voltage 0.20 0.55 V IC= 50mA, IB =1.25mA
Collector-Base Voltage VCBO 32 V
Base-Emitter VBE(SAT) 0.60 0.70 0.85 V IC=10mA, IB=0.25mA
Saturation Voltage 0.70 0.83 1.05 V IC =50mA, IB=1.25mA Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5 V
Base - Emitter Voltage VBE 0.52 V IC=10µA, VCE =5V
0.55 0.65 0.75 V IC=2mA, VCE =5V Continuous Collector Current IC 200 mA
0.78 V IC=50mA, VCE =1V
Base Current IB 50 mA
Static BCW60A 78 IC=10µA, VCE =5V Power Dissipation at Tamb=25°C PTOT 330 mW
Forward hFE 120 170 220 IC=2mA, VCE =5V
Current 50 IC=50mA, VCE =1V Operating and Storage Temperature Range tj:tstg -55 to +150 °C
Transfer BCW60B
Ratio 20 145 IC=10µA, VCE =5V FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
180 250 310 IC=2mA, VCE =5V
70 IC=50mA, VCE =1V hFE Group A hFE Group B hFE Group C hFE Group D
BCW60C
40 220 IC=10µA, VCE =5V Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
250 350 460 IC=2mA, VCE =5V
90 IC=50mA, VCE =1V
BCW60D h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
100 300 IC=10µA, VCE =5V
380 500 630 IC=2mA, VCE =5V h12e 1.5 2 2 3 10-4
100 IC=50mA, VCE =1V h21e 200 260 330 520
Transition Frequency fT 125 250 MHz IC =10mA, VCE =5V h22e 18 30 24 50 30 60 50 100 µS
f = 100MHz
Emitter-Base Capacitance Cebo 8 pF VEBO=0.5V, f =1MHz
SWITCHING CIRCUIT
Collector-Base Capacitance Ccbo 4.5 pF VCBO=10V, f =1MHz
-VBB VCC(+10V)
Noise Figure N 2 6 dB IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
R2 RL
Switching times:
Delay Time td 35 ns 1µsec
Rise Time tr 50 ns IC:IB1:- IB2 =10:1:1mA R1
Turn-on Time ton 85 150 ns R1=5KΩ, R2=5KΩ +10V
Storage Time ts 400 ns VBB =3.6V, RL=990Ω tr < 5nsec
Fall Time tf 80 ns Zin ≥ 100kΩ
Turn-Off Time toff 480 800 ns tr < 5nsec 50Ω Oscilloscope
Mark/Space ratio < 0.01
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle Zs=50Ω
Spice parameter data is available upon request for this device

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