PH 408 Tute -1

1. a) Consider a linear chain of atoms with crystal potential as given below

𝛼 2𝜋𝑥 𝛽 4𝜋𝑥 𝛾 6𝜋𝑥

𝑈(𝑥) = cos ( ) + 𝑎 cos ( ) + 𝑎 cos⁡( ) , where ‘a’ is the lattice constant and
𝑎 𝑎 𝑎 𝑎
equal to 1.5Å. ‘α’, ‘β’, ‘γ’ are constants and given by 1.5 eV Å, 1.2 eV Å and 1 eV Å
respectively. What will be band gap of the crystal in the case

(i) Each atom has two valance electrons

(ii) Each atom has four valance electrons

(b) Consider the case of two valance electrons per atom (case i). With increase of
temperature lattice constant increases by 20 percent, if the crystal before heating can absorb
light with wavelength lower than 450 nm (blue light) what would be the case after heating.

⃗ |. [where Fermi velocity

2. For a 2D crystal, if 𝐸 − 𝑘 relationship is given by E= ±ħ𝑣𝐹 |𝑘
𝑣𝐹 is a constant quantity, and +/- corresponds to conduction and valance band
respectively.
[i] Calculate the density of states per unit area for electrons and holes in the conduction
and valance band respectively.
[ii] Show that number of electron in the conduction band at temperature T is given by

𝜋 𝑘𝑏 𝑇 2 ∞ 𝑥⁡𝑑𝑥 𝜋2
( ⁡) , Use the standard integral ∫0 1+𝑒 𝑥 =
12 ħ𝑣𝐹 12

3. For a 3D crystal, 𝐸 − 𝑘 is given by

2 2
ħ 𝑘
𝐸 = 𝐸𝐶 + ⁡(𝑓𝑜𝑟⁡𝑐𝑜𝑛𝑑𝑢𝑐𝑡𝑖𝑜𝑛⁡𝑏𝑎𝑛𝑑)
2𝑚𝑒∗

2 2
ħ 𝑘
𝐸 = 𝐸𝑉 − ⁡(𝑓𝑜𝑟⁡𝑣𝑎𝑙𝑎𝑛𝑐𝑒⁡𝑏𝑎𝑛𝑑)
2𝑚ℎ∗

Find the electron and hole concentration in the conduction band in terms of the band gap of the
material 𝐸𝑔 (= 𝐸𝐶 − 𝐸𝑉 ), and other constants given in the above expressions

[In the calculation use the fact that, Fermi Dirac distribution function for electrons 𝑓𝑒 =
1 1
can be approximated to 𝑓𝑒 = 𝑒 (𝐸−𝜇)/𝑘𝐵 𝑇 when 𝐸 − 𝜇 ≫ 𝑘𝐵 𝑇]
1+𝑒 (𝐸−𝜇)/𝑘𝐵 𝑇
 4. Identify from the band diagram which one is metallic and which one semiconducting/
insulating. If the band gap exist what is the nature of band gap (direct or indirect).
[Energy is measured with respect to Fermi energy, thus zero corresponds to Fermi level).

Energy (eV)
Energy (eV)
Energy (eV)

Energy (eV)
 [5] Band structure of a crystal (bandgap 1.5 eV) is given below in figure A.
The phonon dispersion relation for the same crystal is given in figure B. The energy
𝑘𝑎
dispersion relation in Γ(0,0,0)-X(π/a, 0, 0) direction is 𝜔 = 𝜔0 𝑠𝑖𝑛 | 2 | , 𝜔0 is constant and
given by 0.023x 1015 Hz.
Calculate minimum wavelength of light that could be absorbed in the crystal. [Assume
measurement temperature is low].

Ef
Energy (eV)

[6] A silicon substrate (dielectric constant =12) having intrinsic carrier concentration
2 × 1016 /𝑚3 is doped one side with p-type and another side with n-type dopant to complete a
P-N junction diode. The concentration of donor atoms is 1023 /𝑚3 and the concentration for
acceptor atoms is 1022 /𝑚3 . Assuming normal incidence calculate the external quantum
efficiency of the diode. [Given, index of refraction (𝑛)=3.5 and absorption coefficient=106 /𝑚,
𝑛−1 2
reflection coefficient for normal incidence 𝑅 = (𝑛+1) ]

[7] A metal wire strain gauge having an unstrained resistance of 120 Ohm and a gauge factor
of 2.1 is bonded onto a steel grinder so that it experiences a tensile stress of 108 Pa. If Young
modulus for steel is 2×1011 Pa. Calculate the strained resistance of the wire.
[8] A semiconductor strain Gauge has nominal resistance R. Due to compressive strain the
lattice constant (𝑎) of the crystal compressed by 1%, if the band gap of silicon depends on its
∆𝑅
lattice constant via the relation 𝐸𝑔 = 200 𝐶 ln(𝑎), calculate . Where C is a constant
𝑅

Given: Carrier concentration of an intrinsic semiconductor has the following relationship

with bandgap
3⁄
𝑘 𝑇
𝐵 2 3⁄
𝑛𝑖 = 2 (2𝜋ђ2)
(𝑚𝑒 𝑚ℎ ) 4 𝑒𝑥𝑝(−𝐸𝑔 /𝐶), all parameters have their usual meaning.