NATIONAL SCHOOL POLYTECHNIC OF CONSTANTINE

MATERIALS ENGINEERING

PDS

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 TP01 OF PDS :
HALL EFFECT

REALIZED BY :
 BOUCHETOB Oussama
 BOUDJOUDJOU Ghada
 ZIDANE Oumaima
 BOURA Taki ahmed
 HADDAD Mouna
 BOUCHAREB Manar Wouroud

2023/2024

1. INTRODUCTION :
The Hall effect is an effect discovered and researched by the
American physicist Edwin Hall. It is the tendency of charge
carriers, whether positive or negative, to shift toward the ends
in electrical conductors due to the magnetic field applied or
exposed to it. This creates a potential difference (called the
Hall potential) between the opposite poles in an electrical
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conductor whose polarity depends on the signal of these
carriers. This force that deviates the current from its path is
called the Lorentz force.

2. OBJECTIVES OF THE EXPERIMENT :

The Hall voltage is measured as a control function
with a magnetic field constant to determine the effect of
current on voltage. The Hall voltage is also measured as
a function of the magnetic field when the control current
is constant. Also, measuring the Hall potential as a
function of temperature is used to determine the gap
energy in doped germanium when the control current is
constant.
3. Theory:

The Hall effect is the appearance of a measurable voltage in a

conductor subjected to a magnetic field perpendicular to the
current (Hall voltage) perpendicular to these as drawn in (pc.
1). The explanation is qualitatively very simple: each charge
carrier (either the electron or the hole) has its way along the
F
current, deflected by the Lorentz force L , perpendicular to the
speed v and the magnetic field B :
F L =q [ v ×B ]

whereq is its charge (positive or negative). This causes the

positive charge to build up on one side and the negative

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charge on the other. In equilibrium the Lorentz force is
F =−F L produced by
canceled out by the electrostatic force H
these charges on both sides of the sample. So we derive that
U H =vBd (for scalar values)

U
B B
q v - - - - - - - - - -
- - - - - - - - - -
FL I I
+ + + + + + + + + + h
+ + + + + + + + + +
d
UH l

pc-1- scheme of Hall effect.

4. Experimental part:
Manipulation :
Work schema: To demonstrate the Hall Effect in doped
germanium, plot the Hall voltage (UH) against current (I) at a
magnetic field of 200mT and room temperature. Calculate the
Hall coefficient (RH) using the relevant equation.
Measure the Hall voltage as a function of magnetic field,
keeping the current constant at 10mA and at room
temperature. Determine the sign, concentration, and mobility
of charge carriers using the appropriate equations.

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Plot and interpret the curve of Hall voltage (UH) against
sample temperature (T) at a fixed magnetic field (200mT) and
current (10mA).
Determine the band separation in germanium by analyzing its
electronic structure.

used equipment:

▪ voltmeter ▪ doped germanium

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▪ bench power supply ▪ transformer

▪Hall effect system

▪amplificator

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 ▪Teslametre

5. investigating elecrtrical conduction mechanisms in

doped germanium

1/ B = 200mT , Varying the current I then noted the variation ofUh.

I(mA) -20 -10 0 10 20

UH(mv) -27,8 -14,6 0 14,8 28,8

the signe (-) represente the direction of Uh

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Comment:
the figure represent a graph that shows the hall voltage versus
current behavior , we can tell that the relation between the hall
voltage and the current is linear , it passes through the center and
the increase of the hall voltage comes with the increase of the
current , with that we conclude that the plate is n-doped .

The graph is a straight line that pass from the center :

y=ax(Uh=1.44*i)
a=dy/dx=(28.8-0)/(20-0)=1.44
we have

Uh= Rh* B*I / d

so

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a= (Rh*B)/d B=200mT d=1mm

a=1.44
Rh = (a*d)/B =(1.44*0.001)/0.2

 Rh= 7.2*10ˉ³ e/m³

3/I = 15 Ma , Varying the value of the magnetic field B then noted the
variation of Uh.

B(mT) 200 160 120 80 40 0

UH(mV) 14,8 11,8 8,8 6,2 3,2 0

Comment:

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 The graph is a strong line pass from the center :Uh=A*B+b

Uh(0)=0=b

A=dy/dB=200/14.8=13.51

Uh=Rh*I/D

Rh=13.51*1/10

Rh=1.35 m³/C

The mobility :In this case T=25°CI=10mA Uh=14.5 mV B=200mT

We have µh=Rh*σ , I = b*d*J , U = a * E σ=J/E=Ia/Ubd
σ=((10*20)*10*^-6)/((14.8*10*1)*10^-9)
σ= 1351.35 (A/m*V)

1/T 0,009 0,0101 0,0109 0,0119 0,0133 0,0146 0,0165 0,0189 0,0221 0,0267 0,0336
3
Ln( -1,43 -1,68 -1,96 -2,21 -2,39 -2,52 -2,57 -2,64 -2,66 -,2,67 -2,68
1/
UH)

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