CRYSTALLINE SILICON SOLAR CELL

MANUFACTURING PROCESS
Contents

1. 클린룸(Cleanroom)이란?

2. 결정질 실리콘 태양전지 제조공정

(Crystalline silicon solar cell manufacturing
process)

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1. 클린룸 (클린룸의 정의)

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1. 클린룸 (클린룸의 정의)

클린룸 5대 원칙

: 클린룸을 효율적으로 사용하고 유지하기 위한 준수사항들

1. 미립자(Particle)의 침입을 방지 (Preventing)

2. 미립자의 발생을 방지 (Prohibiting)

3. 발생된 미립자를 제거 (Purging)

4. 미립자의 누적을 방지 (Protecting)

5. 필요한 온도(Temperature), 습도(Humidity) 및 실내압(Indoor pressure)을 일정하게 유지

(Providing)

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1.클린룸 (청정도, Class)
Number of dusts of a certain size (㎛) or more per unit volume (ft³, m3)

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1. 클린룸 (FED-STD-209E)
PARTICLULATE CLEANLINESS CLASSES
CLASS LIMITS
CLASS
0.1㎛ 0.2㎛ 0.3㎛ 0.5㎛ 5㎛
NAME
Vol. Units Vol. Units Vol. Units Vol. Units Vol. Units
SI English (㎥) (ft³) (㎥) (ft³) (㎥) (ft³) (㎥) (ft³) (㎥) (ft³)

M1 350 10 75 2 30 1 10 0

M 1.5 1 1,240 35 265 7 106 3 35 1

M2 3,500 99 757 21 309 9 100 3

M 2.5 10 12,400 350 265 75 1060 30 353 10

M3 35,000 991 7,570 514 3090 87 1,000 28

M 3.5 100 26,500 750 10,600 300 3,530 100

M4 75,700 2,140 30,900 875 10,000 283

M 4.5 1,000 35,300 1,000 247 7

M5 100,000 2,830 618 17

M 5.5 10,000 353,000 10,000 2,470 70

M6 1,000,000 28,300 6,180 175

M6.5 100,000 3,530,000 100,000 24,700 700

M7 10,000,000 283,000 61,800 1,750

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1. 클린룸 (기류방식)

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1. 클린룸 (기류방식)

Down(Vertical) Flow Clean Room

1500cm

3500cm

1500cm

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1. 클린룸 (청정도별 환기횟수)

청정도 환기횟수
(Class) (Air circulation, 회/h)
10 400회 이상
100 200~400회
1,000 60~70회
10,000 30~40회
100,000 10~20회

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1. 클린룸 (입실 동선)

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1. 클린룸 (Koreatech FAB)

• Clean Room Major Equipment [Semiconductor & Solar Cell Manufacturing

Process Laboratory]

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1. 클린룸 (안전교육)
• Chemicals used in Koreatech Fab
⇒Chemical
BOE (Buffered Oxide Etchant), H2SO4 (Sulfuric acid) , HF (Hydrofluoric acid)
IPA (Isopropyl alcohol), KOH (Potassium hydroxide), HCl (Hydrochloric acid)
H2O2 (Hydrogen peroxide), Acetone, Methanol
⇒Gas
SiH4 (Silane), NH3 (Ammonia), NF3 (Nitrogen trifluoride) , Ar (Argon)
O2 (Oxygen), CF4 (Carbon Fluoride) , H2 (Hydrogen) , N2O (Nitrous oxide)
N2(Nitrogen)

1. Do not touch any moisture.

2. Do not control any gas valve.

• 모든 화공약품 (유기약품, 산/염기)과 (극) 독성가스를 사용하는 공정의 진행자는 반도체 연구

원으로부터 안전교육을 받아야 하며, 안전수칙을 이해하고 숙지하여야 한다.

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2. 결정질 태양전지 공정교육 및 실습

• 결정질 실리콘 태양전지 value chain

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2. 결정질 실리콘 태양전지 제조공정

• Mono-crystalline silicon wafer manufacturing process

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2. 결정질 실리콘 태양전지 제조공정

• Multi-crystalline silicon wafer manufacturing process (Directional solidification)

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 2. 결정질 실리콘 태양전지 제조공정

Multi-crystalline silicon
(Solar)

Mono-crystalline silicon (Semiconductor (11N) 99.999999999%, Solar (6N) 99.9999%)

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2. 결정질 실리콘 태양전지 제조공정

• 단 * 다결정 웨이퍼 비교

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2. 결정질 실리콘 태양전지 제조공정

• Screen printed crystalline solar cell

Cross section of the solar cell

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2. 결정질 실리콘 태양전지 제조공정

• Screen printed crystalline solar cell manufacturing process

• CZ, P-type(Boron doped), Mono-crystalline, Resistivity 0.5~3.0Ω·cm

Thickness 200±20㎛, Size 156×156mm Wafer

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2. 결정질 실리콘 태양전지 제조공정 (SDR & Texturing)

• Solar Wet-Station equipment and process sequence (using wet method)

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2. 결정질 실리콘 태양전지 제조공정 (SDR & Texturing)

• Diamond type wire sawing

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2. 결정질 실리콘 태양전지 제조공정 (SDR & Texturing)

• Diamond type wire sawing

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2. 결정질 실리콘 태양전지 제조공정 (SDR & Texturing)

☞ Random pyramid formation

☞ Pyramid size; 3~5㎛
(0.33~0.56g Etch(both sides))

10㎛

<Before Texturing process> <After Texturing process>

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2. 결정질 실리콘 태양전지 제조공정 (SDR & Texturing)

[Light Trapping by pyramid structures]

→ The textured surface not only reduces reflections, but also allows optical path
lengths that are longer than the thickness of the device by allowing light to
slant into the silicon.

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2. 결정질 태양전지 제조공정실습 (SDR & Texturing)

[Light Trapping in pyramid structures]

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2. 결정질 실리콘 태양전지 제조공정 (Diffusion & PSG Removal)

• POCl3 Furnace 장비 및 공정 순서 (Pre Dep., Drive-In 과정을 통해 불순물 주입)

◆ Target
① Sheet resistance: 50~60 Ω/□
② Dopant concentration: 1x1020~3x1020
③ Doping depth: 0.5 ㎛

◆ Chemical reaction
① 4POCl3 + 3O2 → 2P2O5 + 6Cl2
② 2P2O5 + 5Si → 4P + 5SiO2
③ xSiO2 + yP2O5 → yP2O5xSiO2(PSG)

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2. 결정질 실리콘 태양전지 제조공정 (Diffusion & PSG Removal)

Annealing with O2 and POCl3

P2O5 4POCl3 + 3O2 → 2P2O5 + 6Cl2

Pre-deposition

PSG Annealing with O2

① 2P2O5 + 5Si → 4P + 5SiO2
Drive-in ② xSiO2 + yP2O5
→ yP2O5xSiO2 (PSG)
n+ emitter
HF treatment
SiO2 + 6HF → H2SiF6 + 2H2O
PSG removal

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2. 결정질 실리콘 태양전지 제조공정 (Diffusion & PSG Removal)

[SEM image]

[SIMS profile]

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 2. 결정질 실리콘 태양전지 제조공정 (Antireflection coating)

• PECVD equipment and process sequence

2.SET 2.PRE 5.HAZE
1.BAKE 4.DEP 6.PUMP
FLOW DEP ELIMIN
Process
20.0 10.0 2.0 40 2.0 30.0
Time(sec)

Pressure Throttle
0 4.5 4.5 4.5 4.5
(Torr) Fully Open

RF Power 0 0 550 550 550 0

Temperature
400 400 400 400 400 400
(℃)
Suseptor
Spacing 400 400 400 600 600 990
(mile)

Gas(sccm)

a. N2 4000 4000 4000 4000 4000 x

b. SiH4 x 30 40 85 x -1 PV
c. NH3 x x x 56 56 -1 PV

◆ Chemical reaction
SiH4+NH3+N2 → SixNy (Si3N4) + by-product

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 2. 결정질 실리콘 태양전지 제조공정 (Antireflection coating)

- Transmits sunlight without reflection at the interface between two media (atmospheric
& silicon wafers) with different refractive index.
- Surface passivation.
- Protecting the sun from moisture and temperature.

- Atmospheric(n=1), ARC (1<n1<3.88),

Silicon(n=3.88, 600nm At the wavelength)

- Thickness 80nm, Refractive index 2.05

- SiNx Refractive index:1.9~2.1

λ
Thickness d1= 4𝑛1

<Solar cell antireflection technology concept> Refractive index 𝑛1 = 𝑛0𝑛2

n0: Atmospheric
n2: Silicon

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2. 결정질 실리콘 태양전지 제조공정 (Antireflection coating)

<Change of Refractive index according to gas ratio>

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2. 결정질 실리콘 태양전지 제조공정 (Antireflection coating)

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2. 결정질 실리콘 태양전지 제조공정 (Metallization)

• Screen Printer & Dryer Equipment and Process (Rear Al, Front Ag)

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2. 결정질 실리콘 태양전지 제조공정 (Metallization)

• Screen Printer & Dryer 장비 및 공정 (Al, Ag)

[Dry image]

[Printing image]
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2. 결정질 실리콘 태양전지 제조공정 (Metallization)

① The back side Al electrode screen printing

② Dry

③ The front side Ag electrode screen printing

④ Dry

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 2. 결정질 실리콘 태양전지 제조공정 (Metallization)

Best: 4%
Mass: 6~8%

- 30 ~ 40um thickness, BSF (Al) formation,

- 15 ~ 20um thickness, Fingerbar and Busbar formation (Heraus)
- Influence of Paste, Mesh, Pressure, Belt Speed, and Snap Off
- Influence of back drying temperature (240℃) Belt speed (43mm/s), front drying temperature (230℃), and Belt
speed (70mm/s)

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2. 결정질 실리콘 태양전지 제조공정 (Metallization)

[Electrode design] [Mesh image]

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2. 결정질 실리콘 태양전지 제조공정 (Metallization)

[Current flow from generation to electrode]

- Since the distance traveled by the carrier in the emitter is not constant, the distance
of the finger bar should be designed so that the carrier can be sufficiently collected.

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2. 결정질 실리콘 태양전지 제조공정 (Firing)
• Firing Furnace equipment and process sequence

- Chemical bonding of metal electrode and silicon through heat treatment

- 620 → 690 → 765 → 865 → 975℃, 110mm/s, 1min
- Form ohmic contacts with temperature and time
- Front: Paste penetrates the antireflection film and contacts the n+ emitter.
- Rear: Al Paste diffuses into silicon to form back surface field (BSF), reducing
rear recombination.

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2. 결정질 실리콘 태양전지 제조공정 (Firing)

- For the front electrode, the firing process temperature and time are very important.

- (a) Front electrode passes through emitter: Increase leakage current

- (b) Front electrode and emitter not in contact: Increase series resistance
- (c) Ohmic contact state.

[Contact state between front electrode and emitter by firing process]

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2. 결정질 실리콘 태양전지 제조공정 (Firing)

p type wafer
n+ emitter
Rear Al
electrode
Firing

p++ BSF
Rear Al (Back Surface Filed)
electrode
[Formation of back electrode and BSF by firing process]

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2. 결정질 실리콘 태양전지 제조공정 (Edge Isolation)

• Edge Isolation equipment and process

-PN junction isolation, leakage current prevention

-Using Laser 532nm, 25W

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2. 결정질 실리콘 태양전지 제조공정 (Edge Isolation)

[Emitter formation by thermal diffusion method]

[Leakage current after firing process]

[Side separation using laser scriber equipment]

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2. 결정질 실리콘 태양전지 제조공정 (Efficiency measurement)

• I-V Measurement 장비 및 공정 순서

-Xenon Lamp에서 나온 빛이 mirror → filter → lens와 shutter를 경로하여 1-Sun 조사

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2. 결정질 실리콘 태양전지 제조공정 (Quantum efficiency measurement)

• IPCE 장비 및 공정 순서

특정에너지를 가지고 태양전지에 입사된 광자

(Photon) 개수
대비 태양전지에 의해 수집된 캐리어 개수의 비율

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2. 결정질 실리콘 태양전지 제조공정 (Lifetime measurement)

• QSSPC (Quasi-Steady-State Photoconductance)

- WCT-120 태양광과 유사한 인위적인 빛을 이용하여 Wafer의 전기 생성시간부터 소멸시간의 Life-Time을

측정하는 장치
- Sun-Voc 태양광과 유사한 인위적인 빛을 조사하여 셀의 전지적인 특성 및 효율을 측정하는 장치
- QSSPC Life-time측정은 태양전지 프로세스의 각 단계에서 IV Curve를 비교할 수 있게 전압곡선을 산출하여
보여주는 장치
- 초기 Bare Wafer Lifetime 품질을 모니터링하고 Wafer 표면조직화 처리, 표면 패시베이션 및 에미터 도펀트
확산 평가 등을 수행 함으로써 제조 공정 제어에 실질적인 문제에 대한 솔루션을 찾게 해주는 장치

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2. 결정질 실리콘 태양전지 제조공정 (Reflectance measurement)

• UV/Vis/NIR Spectrophotometer (자외선과 가시선 분자흡수 분광법)

전자기 복사선을 사용하여 전자 흡수 분광법을 이용하여 190~2700nm 파장대의 투과율/반사율/

흡광도를 측정. 빛이 시료 용액을 통과할 때 흡수나 투과에 의하여 광도가 변화하는 것을 이용

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2. 결정질 실리콘 태양전지 제조공정 (Surface state measurement)

• SEM(전자주사현미경)

Texturing 표면

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2. 결정질 실리콘 태양전지 제조공정 (Sheet resistance measurement)

• 4-Point Probe (Cell 표면 저항 측정)

- 면저항(sheet resistance) → Ohm X C.F(보정계수) = Ohm/sq, V/I=Ohm

- 비저항(resistivity) → Ohm/sq X Thickness(cm) = Ohmㆍcm
- 면저항(Bare, Diffusion후), 비저항(Bare)
- 보정계수(correction factor) → 시료크기, 박막두께, 측정온도

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2. 결정질 실리콘 태양전지 제조공정 (Thickness measurement)

• 박막두께측정 (Reflection 방식)

- Cell의 박막의 두께, 굴절률, 균일도 등을 측정 (ARC 증착 후)

- Si Substrate 표면(1계면)과 Thin Film표면(2계면)에서 반사되는 빛의 광 간섭현상을 이용

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 감사합니다

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