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Chapter3 EMT2024
Chapter3 EMT2024
Spring, 2024
Frequently used symbols
r + 0.5dẑ r − 0.5dẑ
E(r) = −q 3
+q .
4πε0 |r + 0.5dẑ| 4πε0 |r − 0.5dẑ|3
q 1 − 3d
2 r̂ · ẑ/r q 1 + 3d
2 r̂ · ẑ/r
E(r) ≈ − 3
(r+0.5dẑ)+ (r−0.5dẑ)
4πε0 r 4πε0 r3
q
≈ (−dẑ + 3dẑ · r̂r̂)
4πε0 r3
1
E(r) ≈ (−p + 3p · r̂r̂)
4πε0 r3
σs ds′ r − r′
E(r) = ,
r′ ∈surface 4πε0 |r − r′ |2 |r − r′ |
Prof. Ruey-Bing (Raybeam) Hwang (Institute
Field andof Wave
Communications
Electromagnetics
Engineering National
Spring,
Yang
2024
Ming Chiao
12 /Tung
71
Coulomb’s law: electric field due to discrete charges and
continuous distribution of charge IX
ρv dv ′ r − r′
E(r) = ,
r′ ∈volume 4πε0 |r − r′ |2 |r − r′ |
where positions (1) and (2) are the two end points along the line
(path) of integral.
The line integral of electric field is independent of the path of
integral; it is determined by the potentials at the two end points.
Such an electric field is termed as conservative field.
where Rk = |Rk | = |r − rk |.
Q
E = r̂
4πε0 r2
By taking the surface integral including the point charge and the
surface is a sphere (with radius R) centered at the origin, we
obtain:
Q Q Q
r̂ · r̂R2 sin θdθdϕ = 4πR2 × = .
θ ϕ 4πε0 R2 4πε0 R2 ε0
The total flux, due to the point charge of q at the tip, on the 3D
irregular box surface vanishes. Here we assume that the solid angle of
dΩ is small enough that the two surfaces of ∆S1 and ∆S2 can be
regarded as plane. The outer surface of ∆S2 does not need to be
aligned with n̂1 .
where
4π 3
Q∂ = − ρo r2 drdΩ = −ρo r
v 3
Prof. Ruey-Bing (Raybeam) Hwang (Institute
Field andof Wave
Communications
Electromagnetics
Engineering National
Spring,
Yang
2024
Ming Chiao
25 /Tung
71
Examples II
ρo
Therefore, we have E = −r̂ 3ε o
r, for r < b.
Out of the Sphere: r > b
The total charge is Q = −ρo 4π 3
3 b .
Apply Gauss’s law again:
4π 3
4πr2 Er = −ρo b .
3εo
ρo b3
Er = − , for r > b
3εo r2
In metal, atoms lose electrons to form positive ions. These ions are
surrounded by delocalized (free) electrons used for conduction.
The metallic bonds between th ions are due to the electrostatic
interaction between the ions and the electron cloud.
Metal is in the structure of tightly packed crystal lattice
(body-centered cubic and face-centered cubic).
When excess charge is placed on a conductor or the conductor is
exerted by a static electric field, charges in the conductor
immediately (≈ 10−19 s) respond to reach a steady state called
electrostatic equilibrium.
∇ · D = ρfree
∇ · Ddv = Qfree
box
D · n̂ds = ε0 En A = Qfree
surface
σs
En =
ε0
where σs = Qfree /A is defined as the surface charge density.
Figure: Apply the Gauss’s to calculate the electric field normal to a metal
surface
σpol = P · n̂′
where n̂′ is the normal vector to the outer surface of the dielectric
modeled by P.
Volume polarization charge density (ρpol ):
ρpol = −∇′ · P
∇ · ε0 E = ρfree
εo A
Co =
d
Here, we assume that the separation distance (d) between two
metal plates is much smaller than the dimension of metal plate.
Therefore, the fringing field effect can be neglected. The electric
field concentrates in the parallel-plate region and is supposed to be
uniform. The electric field strength equals to E = σf ree /εo .
By the definition of C = Q/V , the voltage difference (V ) can be
Qd
determined by V = Ed = Aε o
. Thus, we have: C = εodA
κ−1
σpol = σf ree
κ
The new surface charge density (σpol ) can be considered as the
bound charges in dielectric aligning their negative components
toward the Qf ree and positive ones toward −Qf ree .
Where comes the σpol ?
The polarization vector denoted as P is assumed to be uniform
(perpendicular to the metal plate) inside the dielectric.
σpol can be linked to P by σpol = P · n̂.
σpol = P (magnitude only)
If the surface free charges are present at the interface, the RHS of
volume integral becomes σf ree ds. The previous continuity
equation can be modified as:
The above line integral at LHS equals to (E1t − E2t )∆w. The
vanishing in the line integral, we obtain the continuity equation if
tangential electric field components written below.
E1t = E2t .
where m ̸= n.
Extend to N -charge system, the electric energy can be written as:
N N
1 X X qm qn
UE =
2 4πε0 Rmn
m=1 n=1
where m ̸= n.
Prof. Ruey-Bing (Raybeam) Hwang (Institute
Field andof Wave
Communications
Electromagnetics
Engineering National
Spring,
Yang
2024
Ming Chiao
63 /Tung
71
Electrostatic Energy V
Stored electric energy in a system with continuous charge distribution
We begin with the general expression of UE having N charges:
N N
1 X X qm qn
UE =
2 4πε0 Rmn
m=1 n=1
where m ̸= n
The above equation can be rewritten as:
N N
1X X qn
UE = qm ( )
2 4πε0 Rmn
m=1 n=1,n̸=m
N
1X
= qm Φm∈/
2
m=1
Prof. Ruey-Bing (Raybeam) Hwang (Institute
Field andof Wave
Communications
Electromagnetics
Engineering National
Spring,
Yang
2024
Ming Chiao
64 /Tung
71
Electrostatic Energy VI
Method 2
Apply the formula of W = 1
2 ρΦdv ′
Volume charge density of ρ is a constant inside the sphere with
radius b; it can be taken out of the integral.
We have to evaluate the electric potential at an arbitrary position
inside the sphere.
The electric potential can be determined from the integral of
electric field: r
Φ(r) = − Er dr
∞
Due to the symmetry of the sphere, Er is a function of r only.
Method 3
1
Apply the formula of W = 2 v E · Ddv
Because of D = εo E, what we have to evaluate is
b ∞
ρb3 2
εo εo ρr 2
W = |E|2 dv = ( ) 4πr2 dr + ( ) 4πr2 dr
2 v 2 0 3εo b 3εo r2
4πρ2 b5
We have W = 15εo .