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Indian Institute of Technology Roorkee

Tutorial 2
ECN-205: Analog Circuits
Instructor: Prof. Sourajeet Roy/ Prof. Sudeb Dasgupta

Question 1: Find the Drain Current and Voltage Gain, assuming MOSFET in saturation?

Question 2: Calculate the bias current of M1, to drive MOSFET. Assume 𝜇𝑛 𝐶𝑜𝑥 =
400 𝜇𝐴/𝑉 2 , 𝑉𝑇𝐻 = 0.4 𝑉 and 𝑊/𝐿 = 4/0.72

Question 3: Check whether the MOSFET still working in saturation region or not with change
in aspect ratio. Assume 𝜇𝑛 𝐶𝑜𝑥 = 600 𝜇𝐴/𝑉 2 , 𝑉𝑇𝐻 = 0.4 𝑉 and 𝑊/𝐿 = 8/0.36

Question 4: A MOSFET carries a drain current of 1.3 mA with VDS = 0.65 V in saturation.
Determine the change in ID if VDS rises to 1.65 V and 𝜆 = 0.11 𝑉 −1 . What is the device output
impedance?

Question 5: An Electronic device having a dc level of zero drives a CG stage biased at 𝐼𝐷 =


0.5 𝑚𝐴. If 𝑊/𝐿 = 50, 𝜇𝑛 𝐶𝑜𝑥 = 100 𝜇𝐴/𝑉 2 , 𝑉𝑡ℎ = 0.5 𝑉, and 𝑉𝐷𝐷 = 1.8 𝑉, determine
the maximum allowable value of RD?
Question 6: A common gate amplifier has?
a) High input resistance and High Output resistance
b) Low input resistance and High Output resistance
c) Low input resistance and Low Output resistance
d) High input resistance and Low Output resistance
Question 7: A source follower is realized as shown in Fig. below, where M2 serves as a current
source of 100 𝜇𝐴. 𝑉𝑑𝑑 = 2 𝑉 ,𝑉𝑡ℎ (𝑀1 𝑎𝑛𝑑 𝑀2)𝑎𝑠 0.4𝑉. What range of 𝑉𝑖𝑛 for M1 be
maintained to keep M1 in saturation region? 𝑉𝑜𝑢𝑡 has a fixed value of 1.40 𝑉, 𝑊/𝐿 = 4/0.72

Question 8: A source follower is realized as shown in, where 𝑀2 serves as a current source of
100 𝜇𝐴. 𝑉𝑑𝑑 = 2 𝑉 ,𝑉𝑡ℎ (𝑀1 𝑎𝑛𝑑 𝑀2)𝑎𝑠 0.4𝑉. What width to length ratio be maintained to
keep M1 in saturation region? 𝑉𝑜𝑢𝑡 has a fixed value of 1.40 V and 𝑉𝑖𝑛 has 2.2 V.

Question 9: Given, 𝑉𝐷𝐷 = 1.8𝑉, 𝑅3 = 1𝐾Ω, 𝑅1 = 4 𝐾Ω, 𝑅2 = 10 𝐾Ω. Assume 𝜇𝑛 𝐶𝑜𝑥 =


100 𝜇𝐴/𝑉 2 and 𝑉𝑇𝐻 = 0.5 𝑉, 𝑊/𝐿 = 5/0.18 , For MOSFET to be in saturation, find the
value of 𝑅𝐷 ?

Question 10: Given, 𝑉𝐷𝐷 = 1.8𝑉, 𝑅3 = 1𝐾Ω, 𝑅1 = 4 𝐾Ω, 𝑅2 = 10 𝐾Ω. Assume


2
𝜇𝑛 𝐶𝑜𝑥 = 100 𝜇𝐴/𝑉 and 𝑉𝑇𝐻 = 0.5 𝑉, 𝑊/𝐿 = 5/0.18. Predict the region of operation if
value of RD goes to 20 KΩ?
Question 11: Consider gain = 0.9 for the following circuit (shown below) and maximum
applicable input signal level is 1V. Determine the W/L ration for the MOSFET.

𝑊 20
Question 12: For the amplifier shown below, consider ( ) = , 𝐼1 = 200 𝜇𝐴, 𝑉𝑇𝐻𝑂 =
𝐿 1 0.5
1
0.6𝑉, 2𝜙𝐹 = 0.7𝑉, 𝜇𝑁 𝐶𝑂𝑋 = 50𝜇𝐴/𝑉 2 , 𝛾 = 0.4𝑉 2 . If 𝑉𝑖𝑛 = 1.2𝑉, find out 𝑉𝑜𝑢𝑡 and the bias
voltage 𝑉𝑏 .

Question 13: Determine the small-signal voltage gain of the circuit (shown below) biased with
a constant-current source and incorporating a source bypass capacitor. The transistor
parameters are: 𝑉𝑇𝐻 = 0.8𝑉, 𝐾𝑁 = 1𝑚𝐴/𝑉 2 , and 𝜆 = 0.
Question 14: For an NMOS source-follower circuit, the parameters are 𝑔𝑚 = 4 𝑚𝐴/𝑉 and
𝑟𝑂 = 50 𝐾Ω.

a. Find the no load (𝑅𝑆 = ∞) small-signal voltage gain and the output resistance.
b. Determine the small-signal voltage gain when a 4 𝐾Ω load is connected to the output.

Question 15: Determine the small-signal voltage gain of the CMOS amplifier shown below.
Assume transistor parameters of 𝑉𝑇𝐻,𝑁 = +0.8𝑉, 𝑉𝑇𝐻,𝑃 = −0.8𝑉, 𝑘𝑛′ = 80𝜇𝐴/𝑉 2 , 𝑘𝑝′ =
𝑊 𝑊
40𝜇𝐴/𝑉 2 , ( ) = 15, ( ) = 30, and 𝜆𝑛 = 𝜆𝑝 = 0.01 𝑉 −1 . Also assume 𝐼𝐵𝐼𝐴𝑆 = 0.2 𝑚𝐴
𝐿 𝑛 𝐿 𝑝

Question 16: A certain amplifier has voltage gain of 15 𝑑𝑏. If the input signal voltage is 0.8V,
what is the output voltage?
Question 17: Find gain and output impedance of the following circuits shown below.

Question 18: For the circuit shown below, the transistor parameters are: 𝑉𝑇𝐻,1 = 𝑉𝑇𝐻,2 = 1.2𝑉,
𝐾𝑛1 = 𝐾𝑛2 = 0.8 𝑚𝐴/𝑉 2 , and 𝜆1 = 𝜆2 = 0. Let 𝑅1 + 𝑅2 + 𝑅3 = 300 𝐾Ω and 𝑅𝑆 = 10 𝐾Ω.
Design the circuit such that 𝐼𝐷 = 0.4 𝑚𝐴 and 𝑉𝐷𝑆,1 = 𝑉𝐷𝑆,2 = 2.5 𝑉.
Question 19: Consider the circuit shown below, with transistor parameters 𝐾𝑛1 = 500 𝜇𝐴/𝑉 2 ,
𝐾𝑛2 = 200 𝜇𝐴/𝑉 2 , 𝑉𝑇𝐻,1 = 𝑉𝑇𝐻,2 = 1.2 𝑉, and 𝜆1 = 𝜆2 = 0. Design the circuit such that
𝐼𝐷,1 = 0.2 𝑚𝐴, 𝐼𝐷,2 = 0.5 𝑚𝐴, 𝑉𝐷𝑆,1 = 𝑉𝐷𝑆,2 = 6 𝑉, 𝑅𝑖 = 100 𝐾Ω and 𝑅𝑠𝑖 = 4 𝐾Ω.

Question 20: Find 𝑉𝑂𝑈𝑇,1 /𝑉𝑂𝑈𝑇,2 for the circuit shown below.

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