ANALOG CIRCUITS MINI PROJECT – 1

B. SANA
EE19BTECH11021

1. NMOS(L=65nm, W=1µm):

Schematic of NMOS(L=65nm,W=1 µm)

Vary V gs linearly from 0V to 1.1V with increment of 0.001V. setting V ds=V dd/2=0.55V.

I. Vgs0:Vgs value in the middle of the quadratic region of Ids−V gs curve.

From the above simulation we can observe that gds is linear from 0.326V to 0.456V. thus Vgs0
is 0.391. By examining at that point we get the gm as 675 µΩ-1.
 II. gm0:gm at Vgs0.

The value of Vgs0 when gm = 675.64 µΩ-1 is found by doing average of 0.456V and 0.326V.

III. VT: x-axis intercept of tangent atVgs0 in gm−Vgs curve.

By drawing tangent at point Vgs0 and producing such that it intersects Vgs, which is VT.
From the above graph we can observe that the x-intercept is VT=286.35mV.
IV.

V. gds0: gds at Vgs0.

Schematic with Vgs=Vsg0=391.399mV

Varying VDS linearly from 0V to 0.55V with an increment of 0.001V we obtain the below
results.
 here gds is derivative of ids w.r.t Vds at operating point. gds0= gds at Vgs0.
From the above graph we can observe that gds0=69.183443µΩ-1.

VI. λ: Channel-length modulation parameter. (Vgs=Vgs0).

From the above plot we can observe that Ids at Vgs0=35.824424µA.

We know that gds= λIds
λ= gds/Ids = 69.183443µΩ-1/35.824424µA
λ= 1.9311821 V-1.
 2. PMOS(L=65nm, W=1µm):

Schematic of PMOS(L=65nm,W=1 µm)

Vary V gs linearly from 0.01V to 1.1V with increment of 0.001V. setting V ds=V dd/2=0.55V.

I. Vgs0:Vgs value in the middle of the quadratic region of Ids−V gs curve.

From the above graph we can observe that gds is linear from 340.03984mV to 440.54069mV.
thus Vgs0 is 390.290mV. By examining at that point we get the gm as 222.42 µΩ-1.
 II. gm0:gm at Vgs0.

The value of Vgs0 when gm = 222.42966 µΩ-1 is found by doing average of 340.03984mV
and 440.54069mV.

III. VT: x-axis intercept of tangent atVgs0 in gm−Vgs curve.

By drawing tangent at point Vgs0 and producing such that it intersects Vgs, which is VT.
From the above graph we can observe that the x-intercept is VT=273.2916mV.
IV.

V. gds0: gds at Vgs0.

Schematic with Vgs=Vgs0=390.29027mV

Varying VDS linearly from 0V to 0.55V with an increment of 0.001V we obtain the below
results
here gds is derivative of ids w.r.t Vds at operating point. gds0= gds at Vgs0.
From the above graph we can observe that gsd0=27.586µΩ-1.

VI. λ: Channel-length modulation parameter. (Vgs=Vgs0).

From the above plot we can observe that Ids at Vsg0=11.5992µA.

We know that gds= λIds
λ= gds/Ids = 27.586µΩ-1/11.5992µA.
λ= 2.37 V-1.
 3. NMOS(L=1 µm, W= 1 µm):

Schematic of NMOS(L=1 µm,W=1 µm)

Vary V gs linearly from 0V to 1.1V with increment of 0.001V. setting V ds=V dd/2=0.55V.

I. Vgs0:Vgs value in the middle of the quadratic region of Ids−V gs

curve.

From the above graph we can observe that gds is linear from 500mV to 600mV. thus Vgs0 is
550mV. By examining at that point we get the gm as 69.237 µΩ-1.
 II. gm0:gm at Vgs0.

The value of Vgs0 when gm = 69.237 µΩ-1 is found by doing average of 500mV and 600mV.

III. VT: x-axis intercept of tangent atVgs0 in gm−Vgs curve.

By drawing tangent at point Vgs0 and producing such that it intersects Vgs, which is VT.
From the above graph we can observe that the x-intercept is VT=408.219mV.
 IV.

V. gds0: gds at Vgs0.

Schematic with Vgs=Vgs0=390.29027mV

Varying VDS linearly from 0V to 0.55V with an increment of 0.001V we obtain the below
results
here gds is derivative of ids w.r.t Vds at operating point. gds0= gds at Vgs0.
From the above graph we can observe that gds0=191.9033nΩ-1.

VI. λ: Channel-length modulation parameter. (Vgs=Vgs0).

From the above plot we can observe that Ids at Vgs0=6.0312µA.

We know that gds= λIds
λ= gds/Ids = 191.9033nΩ-1/6.0312µA.
λ= 0.0318 V-1.
 4. PMOS(L=1 µm, W=1µm):

Schematic of PMOS(L=1 µm,W=1 µm)

Vary V gs linearly from 0.01V to 1.1V with increment of 0.001V. setting V ds=V dd/2=0.55V.

I. Vgs0:Vgs value in the middle of the quadratic region of Ids−V gs

curve

From the above simulation we can observe that gds is linear from 460.94mV to 561.00mV.
thus Vsg0 is 510mV.
 II. gm0:gm at Vgs0

The value of Vgs0 when gm = 7.296 µΩ-1 is found by doing average of 460mV and 561mV.

III. VT: x-axis intercept of tangent atVgs0 in gm−Vgs curve.

By drawing tangent at point Vsg0 and producing such that it intersects Vsg, which is VT.
From the above graph we can observe that the x-intercept is VT=370.22mV.
 IV.

V. gds0: gds at Vgs0.

Schematic with Vsg=Vsg0=510.306mV

Varying VDS linearly from 0V to 0.55V with an increment of 0.001V we obtain the below
results
here gds is derivative of Ids w.r.t Vds at operating point. gds0= gds at Vsg0.
From the above graph we can observe that gds0=21.08890nΩ-1.

VI. λ: Channel-length modulation parameter. (Vgs=Vgs0).

From the above plot we can observe that Ids at Vsg0=622.36nA.

We know that gds= λIds
λ= gds/Ids = 21.08890nΩ-1/622.36nA.
λ= 0.0338 V-1.
Error estimated in PMOS(L=65nm, W=1µm):
Error estimated in NMOS(L=1 µm, W= 1 µm):
Error estimated in PMOS(L=1 µm, W=1µm):