EE 3300 - Analog Circuits

Mini-Project 1
Sanket Ranade - EE19BTECH11012

1 NMOS with L = 65 nm and W = 1 um

Figure 1: Circuit Diagram

1.1 Finding Vgs0

Figure 2: Simulation result

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 • Vgs can be found out by taking middle point of linear region of deriva-
tive of I ds − Vds graph.

• Vgs0 = 380.3825 mV

1.2 Finding g m0

• g m0 = value of g m at Vgs0

• g m0 = 605.26 micro siemens

1.3 Finding VT

• VT can be found out by extrapolating the approximated linear region

line and finding x-intercept of that line.

• VT = 278.489 mV

1.4 Finding β
W
• In saturation region, we know that g m = µn C ox (Vgs − VT ) where β =
L
µn C ox .

• Using the values found in the above sections, we get β = 386.109∗10−6 AV −1

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1.5 Finding g ds0

Figure 3: Circuit diagram for finding g ds0

Figure 4: Simulation result

• We can find g ds0 by finding value of g ds at Vgs0 .

• g ds0 = 59.665 micro siemens

1.6 Finding λ

• We know that g ds = λ ∗ I ds

• At Vgs0 , we get I ds = 29.517 µA.

• λ = 59.665/29.517 = 2.0214 V −1

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2 PMOS with L = 65 nm and W = 1 um

Figure 5: Circuit Diagram

2.1 Finding Vgs0

Figure 6: Simulation result

• Vgs can be found out by taking middle point of linear region of deriva-
tive of I ds − Vds graph.
• Vgs0 = 387.996 mV

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2.2 Finding g m0

• g m0 = value of g m at Vgs0

• g m0 = 216.65 micro siemens

2.3 Finding VT

• VT can be found out by extrapolating the approximated linear region

line and finding x-intercept of that line.

• VT = 270.199 mV

2.4 Finding β
W
• In saturation region, we know that g m = µ p C ox (Vgs − VT ) where β =
L
µ p C ox .

• Using the values found in the above sections, we get β = 119.547∗10−6 AV −1

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2.5 Finding g ds0

Figure 7: Circuit Diagram for finding g ds0

Figure 8: Simulation result

• We can find g ds0 by finding value of g ds at Vgs0 .

• g ds0 = 26.754 micro siemens

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2.6 Finding λ

• We know that g ds = λ ∗ I ds

• At Vgs0 , we get I ds = 11.14 µA.

• λ = 26.754/11.14 = 2.4016 V −1

3 NMOS with L = 1 um and W = 1 um

Figure 9: Circuit Diagram

3.1 Finding Vgs0

Figure 10: Simulation result

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 • Vgs can be found out by taking middle point of linear region of deriva-
tive of I ds − Vds graph.

• Vgs0 = 552.18 mV

3.2 Finding g m0

• g m0 = value of g m at Vgs0

• g m0 = 70.7146 micro siemens

3.3 Finding VT

• VT can be found out by extrapolating the approximated linear region

line and finding x-intercept of that line.

• VT = 403.08 mV

3.4 Finding β
W
• In saturation region, we know that g m = µn C ox (Vgs − VT ) where β =
L
µn C ox .

• Using the values found in the above sections, we get β = 474.276∗10−6 AV −1

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3.5 Finding g ds0

Figure 11: Circuit diagram for finding g ds0

Figure 12: Simulation result

• We can find g ds0 by finding value of g ds at Vgs0 .

• g ds0 = 0.19554 micro siemens

3.6 Finding λ

• We know that g ds = λ ∗ I ds

• At Vgs0 , we get I ds = 6.1843 µA.

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 • λ = 0.19554/6.1843 = 0.03162 V −1

4 PMOS with L = 1 um and W = 1 um

Figure 13: Circuit Diagram

4.1 Finding Vgs0

Figure 14: Simulation result

• Vgs can be found out by taking middle point of linear region of deriva-
tive of I ds − Vds graph.

• Vgs0 = 523.851 mV

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4.2 Finding g m0

• g m0 = value of g m at Vgs0

• g m0 = 7.97 micro siemens

4.3 Finding VT

• VT can be found out by extrapolating the approximated linear region

line and finding x-intercept of that line.

• VT = 363.33 mV

4.4 Finding β
W
• In saturation region, we know that g m = µ p C ox (Vgs − VT ) where β =
L
µ p C ox .

• Using the values found in the above sections, we get β = 49.65∗10−6 AV −1

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4.5 Finding g ds0

Figure 15: Circuit diagram for finding g ds0

Figure 16: Simulation result

• We can find g ds0 by finding value of g ds at Vgs0 .

• g ds0 = 0.02393 micro siemens

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4.6 Finding λ

• We know that g ds = λ ∗ I ds

• At Vgs0 , we get I ds = 0.726 µA.

• λ = 0.02393/0.726 = 0.03296 V −1

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