Indian Institute of Technology Roorkee

Tutorial 1
ECN-205: Analog Circuits
Instructors: Prof Sourajeet Roy/ Prof. Sudeb Dasgupta

Question 1: For a n-MOSFET device, following data are given as (𝑉𝑆 , 𝑉𝐵 = 0), 𝑉𝐺 = 1𝑉.
a. For 𝑉𝐷𝑆 = 0.2 𝑉 and 𝑉𝐷𝑆 = 5𝑉, find the values of 𝐼𝐷 respectively?
b. What will be the body biasing voltage which will make the value of 𝐼𝐷 to be zero.
1
𝑉𝑇𝑁0 = 0.7 𝑉, 𝐾 = 40 µ𝐴/𝑉 2 , 𝛾 = 0.4 𝑉 2 , 2𝜙𝐹 = 0.6 𝑉, 𝑊 = 10 𝜇𝑚, 𝐿 = 1 𝜇𝑚.
Question 2: Calculate the total charge stored in the channel of an NMOS transistor having
𝐶𝑂𝑋 = 6 𝑓𝐹/𝜇𝑚2 , 𝐿 = 0.25 𝜇𝑚, and 𝑊 = 2.5 𝜇𝑚, and operated at 𝑉𝑂𝑉 = 0.5 𝑉 and 𝑉𝐷𝑆 =
0 𝑉.
Question 3: An n-channel MOS device in a technology for which oxide thickness is 20 𝑛𝑚,
minimum channel length is 1 𝜇𝑚, and 𝑉𝑡 = 0.8 𝑉 operates in the triode region, with small 𝑉𝐷𝑆
and with the gate−source voltage in the range 0 𝑉 to +5 𝑉. What device width is needed to
ensure that the minimum available resistance is 1 𝐾Ω ?
Question 4: With the knowledge that 𝜇𝑃 = 0.4 𝜇𝑁 , what must be the relative width of n-
channel and p-channel devices if they are to have equal drain currents when operated in the
saturation mode with overdrive voltages of the same magnitude?
Question 5: Consider an n-channel MOSFET with 𝑡𝑂𝑋 = 9 𝑛𝑚, 𝜇𝑁 = 500 𝑐𝑚2 /𝑉𝑠, 𝑉𝑡 =
0.7 𝑉, and 𝑊/𝐿 = 10. Find the drain current in the following cases:
a. 𝑉𝐺𝑆 = 5 𝑉 and 𝑉𝐷𝑆 = 1 𝑉
b. 𝑉𝐺𝑆 = 2 𝑉 and 𝑉𝐷𝑆 = 1.3 𝑉
c. 𝑉𝐺𝑆 = 5 𝑉 and 𝑉𝐷𝑆 = 0.2 𝑉
d. 𝑉𝐺𝑆 = 𝑉𝐷𝑆 = 5 𝑉
Question 6: An NMOS transistor having 𝑉𝑡 = 1 𝑉 is operated in the triode region with small
𝑉𝐷𝑆 . With 𝑉𝐺𝑆 = 1.5 𝑉, it is found to have a resistance 𝑟𝐷𝑆 of 1 𝐾Ω. What value of 𝑉𝐺𝑆 is
required to obtain 𝑟𝐷𝑆 = 200 𝛺 ? Find the corresponding resistance values obtained with a
device having twice the value of 𝑊.
Question 7: Consider a N-MOSFET as shown in figure below. What will be the change in ID
𝑊
if VDD changes from 3.3 to 1.8V. Consider VTH = 0.5V and 𝜇𝑁 𝐶𝑂𝑋 𝐿 = 100 µ𝐴/𝑉 2
Question 8: Design the circuit to obtain a current 𝐼𝐷 of 0.4 𝑚𝐴. Find the value required for 𝑅
𝜇𝐴
and find the dc voltage 𝑉𝐷 . Let the NMOS transistor have 𝑉𝑡 = 2 𝑉, 𝜇𝑁 𝐶𝑂𝑋 = 200 𝑉 2 , 𝐿 =
10𝜇𝑚 and 𝑊 = 100 𝜇𝑚. Neglect channel length modulation effect.

Question 9: The oxide capacitance 𝐶𝑂𝑋 of a MOSCAP in depletion is 0.5 𝑛𝐹/𝑐𝑚2 and
depletion region capacitance 𝐶𝐷𝑅 = 0.12 𝑛𝐹/𝑐𝑚2 . Calculate the total depletion capacitance of
the MOSCAP?
Question 10: Figure below shows two NMOS transistors operating in saturation at equal 𝑉𝐺𝑆
and 𝑉𝐷𝑆 . If the two devices are matched except for a maximum possible mismatch in their W/L
ratios of 2%, what is the maximum resulting mismatch in the drain currents?

Question 11: The threshold voltage of a MOS is given by:

𝑡𝑜𝑥 𝑄𝑑
𝑉𝑡ℎ = 2𝜙𝐹 +
𝜖𝑜𝑥
2
Assume that the value of 2𝜙𝐹 = 3 𝑉𝑡ℎ (Neglect all non-linearities). If the oxide thickness 𝑡𝑜𝑥
increase by 20%, what is the change in the threshold voltage Δ𝑉𝑡ℎ ? (Assume nominal value of
𝑉𝑡ℎ = 1 V).
Question 12: Calculate the total charge stored in the channel of an NMOS transistor having
𝐶𝑂𝑋 = 25 𝑓𝐹/𝜇𝑚2 , 𝐿 = 65 𝑛𝑚, and 𝑊 = 650 𝑛𝑚, and operated at 𝑉𝑂𝑉 = 0.15 𝑉 and
𝑉𝐷𝑆 = 0𝑉.
Question 13: An n-channel MOS device in a technology for which oxide thickness is 4 𝑛𝑚,
minimum channel length is 0.18𝜇𝑚, 𝑘𝑛′ = 400 𝜇𝐴/𝑉 2 , and 𝑉𝑡 = 0.5𝑉 operates in the triode
region, with small 𝑉𝐷𝑆 and with the gate–source voltage in the range 0 𝑉 to +1.8 𝑉. What
device width is needed to ensure that the minimum available resistance is 1 𝐾Ω ?
Question 14: Consider the CMOS circuit shown in the figure below (substrates are connected
𝑊
to their respective sources). The gate width (𝑊) to gate length (𝐿) ratios ( 𝐿 ) of the transistors
are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the
pMOSFET, the threshold voltage is −1 𝑉 and the mobility of holes is 40 𝑐𝑚2 /𝑉𝑠. For the
nMOSFET, the threshold voltage is 1 𝑉 and the mobility of electrons is 300 𝑐𝑚2 /𝑉𝑠. Find the
steady state output voltage 𝑉𝑂 .

Question 15: For a particular IC-fabrication process, the transconductance parameter 𝑘𝑛′ =
400𝜇𝐴/𝑉 2 , and 𝑉𝑡 = 0.5𝑉. In an application in which 𝑉𝐺𝑠 = 𝑉𝐷𝑆 = 𝑉𝑠𝑢𝑝𝑝𝑙𝑦 = 1.8𝑉, a drain
current of 2 𝑚𝐴 is required of a device of minimum length of 0.18𝜇𝑚. What value of
channel width must the design use?
Question 16: Plot the graph for capacitance vs thickness of oxide layer for a varying thickness
(from 2𝑛𝑚 to 7𝑛𝑚) for a fixed material of insulating layer of oxide of 𝑆𝑖𝑂2.
Question 17: Plot the graph for capacitance vs thickness of oxide layer for a varying thickness
(from 2𝑛𝑚 to 7𝑛𝑚) for a new material of insulating layer of oxide of 𝐻𝑓𝑂2. Also Comment
and compare with the graph obtained in question no. 16.