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HMC580ST89 / 580ST89E

v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz

Typical Applications Features

8 The HMC580ST89 / HMC580ST89E is ideal forr:


• Cellular / PCS / 3G
P1dB Output Power: +22 dBm
Gain: 22 dB
• Fixed Wireless & WLAN Output IP3: +37 dBm
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT

• CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os


• Microwave Radio & Test Equipment Single Supply: +5V
• IF & RF Applications Industry Standard SOT89 Package

TE
Functional Diagram General Description
The HMC580ST89 & HMC580ST89E are InGaP
Heterojunction Bipolar Transistor (HBT) Gain
Block MMIC SMT amplifiers covering DC to 1 GHz.

LE Packaged in an industry standard SOT89, the


amplifier can be used as a cascadable 50 Ohm RF
or IF gain stage as well as a PA or LO driver with
up to +26 dBm output power. The HMC580ST89(E)
offers 22 dB of gain with a +37 dBm output IP3 at 250
MHz, and can operate directly from a +5V supply. The
SO
HMC580ST89(E) exhibits excellent gain and output
power stability over temperature, while requiring a
minimal number of external bias components.
B

Electrical Specifi cations, Vs= 5V, Rbias= 1.8 Ohm, TA = +25° C


Parameter Min. Typ. Max. Units
DC - 0.25 GHz 19 22 dB
O

Gain 0.25 - 0.50 GHz 18.5 21 dB


0.50 - 1.00 GHz 15 17 dB
Gain Variation Over Temperature DC - 1.0 GHz 0.005 dB/ °C
DC - 0.25 GHz 35 dB
Input Return Loss 0.25 - 0.50 GHz 28 dB
0.50 - 1.00 GHz 19 dB
DC - 0.50 GHz 12 dB
Output Return Loss
0.50 - 1.00 GHz 11 dB
Reverse Isolation DC - 1.0 GHz 23 dB
DC - 0.25 GHz 19 22 dBm
Output Power for 1 dB Compression (P1dB) 0.25 - 0.50 GHz 17.5 20.5 dBm
0.50 - 1.00 GHz 16 19 dBm
DC - 0.25 GHz 37 dBm
Output Third Order Intercept (IP3)
0.25 - 0.50 GHz 35 dBm
(Pout= 0 dBm per tone, 1 MHz spacing)
0.50 - 1.00 GHz 33 dBm
Noise Figure DC - 1.0 GHz 2.8 dB
Supply Current (Icq) 88 110 mA

Note: Data taken with broadband bias tee on device output.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz

Broadband Gain & Return Loss Gain vs. Temperature


25
20
15
24

20
8
10
RESPONSE (dB)

5 16
S21

AMPLIFIERS - DRIVER & GAIN BLOCK - SMT


0

GAIN (dB)
S11
-5 S22
12
-10 +25C
+85C
-15
8 -40C
-20

TE
-25
-30 4
-35
-40 0
0 0.5 1 1.5 2 2.5 3 0 0.25 0.5 0.75 1 1.25 1.5
FREQUENCY (GHz) FREQUENCY (GHz)

Input Return Loss vs. Temperature


0

-5

-10
+25C
+85C
-40C
LE Output Return Loss vs. Temperature
0

-5
RETURN LOSS (dB)

RETURN LOSS (dB)

-15
-10
SO
-20

-25
-15
-30
+25C
-35 -20 +85C
-40C
-40

-45 -25
0 0.3 0.5 0.8 1 1.3 1.5 0 0.25 0.5 0.75 1 1.25 1.5
FREQUENCY (GHz) FREQUENCY (GHz)
B

Reverse Isolation vs. Temperature Noise Figure vs. Temperature


O

0 10

-5
REVERSE ISOLATION (dB)

8
NOISE FIGURE (dB)

-10 +25C
+85C +25C
-40C 6 +85C
-15
-40C

-20
4

-25
2
-30

-35 0
0 0.25 0.5 0.75 1 1.25 1.5 0 0.25 0.5 0.75 1 1.25 1.5
FREQUENCY (GHz) FREQUENCY (GHz)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 147
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz

P1dB vs. Temperature Psat vs. Temperature

8 26
24
22
28

24
20
18 20
P1dB (dBm)
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT

Psat (dBm)
16
16
14
+25C
12 +85C +25C
-40C 12 +85C
10 -40C
8

TE
8
6
4 4
2
0 0
0 0.3 0.5 0.8 1 1.3 1.5 0 0.25 0.5 0.75 1 1.25 1.5
FREQUENCY (GHz) FREQUENCY (GHz)

Output IP3 vs. Temperature


45

40
LE Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 88 mA @ 850 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)

36

32

28

24
IP3 (dBm)

35
20
SO
16
30
12 Gain
P1dB
+25C 8 Psat
25 +85C IP3
-40C 4

20 0
0 0.25 0.5 0.75 1 1.25 1.5 4.5 5 5.5
FREQUENCY (GHz) Vs (V)
B

Vcc vs. Icc Over Temperature for


Fixed Vs= 5V, RBIAS= 1.8 Ohms ACPR vs. Channel Output Power
O

94 -20
+85C
92 -25

-30 WCDMA 140MHz


90 WCDMA 400MHz
+25C CDMA2000 140MHz
-35 CDMA2000 400MHz
ACPR (dBc)

88
Icc (mA)

-40
86
-45
84
-50
82
-40C -55
80 -60
78 -65
4.82 4.83 4.84 4.85 4.86 4.87 2 4 6 8 10 12 14 16 18
Vcc (V) CHANNEL OUTPUT POWER (dBm)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 148
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz

Absolute Maximum Ratings


Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +4.2 Vdc)
+5.5 Vdc
+10 dBm ELECTROSTATIC SENSITIVE DEVICE 8
Junction Temperature 150 °C OBSERVE HANDLING PRECAUTIONS
Continuous Pdiss (T = 85 °C)

AMPLIFIERS - DRIVER & GAIN BLOCK - SMT


0.59 W
(derate 9 mW/°C above 85 °C)
Thermal Resistance
110 °C/W
(junction to lead)

TE
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HMB) Class 1C

Outline Drawing
LE
SO

NOTES:
B

1. PACKAGE BODY MATERIAL:


MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
O

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.


6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
[1] H580
HMC580ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1
XXXX
[2] H580
HMC580ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 149
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz

Pin Descriptions

8 Pin Number Function Description Interface Schematic

This pin is DC coupled.


1 IN
An off chip DC blocking capacitor is required.
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT

3 OUT RF output and DC Bias (Vcc) for the output stage.

TE
These pins and package bottom
2, 4 GND
must be connected to RF/DC ground.

Application Circuit LE
SO
B
O

Recommended Bias Resistor Values


for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Supply Voltage (Vs) 6V 8V Note:
RBIAS VALUE 13 Ω 36 Ω 1. External blocking capacitors are required on
RFIN and RFOUT.
RBIAS POWER RATING ¼W ½W
2. RBIAS provides DC bias stability over temperature.

Recommended Component Values for Key Application Frequencies with Vs = +5V


Frequency (MHz)
Component
50 250 400 900

L1 270 nH 110 nH 110 nH 56 nH

C1, C2 0.01 μF 820 pF 820 pF 100 pF

Rbias 0 Ohms 1.5 Ohms 1.5 Ohms 1.8 Ohms

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 150
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz

Evaluation PCB

AMPLIFIERS - DRIVER & GAIN BLOCK - SMT


TE
LE
SO
B

List of Materials for Evaluation PCB 116402 [1]


O

Item Description The circuit board used in the final application


J1 - J2 PCB Mount SMA Connector should use RF circuit design techniques. Signal
J3 - J4 DC Pin lines should have 50 Ohm impedance while the
C1, C2 Capacitor, 0402 Pkg. package ground leads and package bottom should
C3 100 pF Capacitor, 0402 Pkg. be connected directly to the ground plane similar to
C4 1000 pF Capacitor, 0603 Pkg.
that shown. A sufficient number of via holes should
C5 2.2 μF Capacitor, Tantalum
be used to connect the top and bottom ground
R1 Resistor, 1206 Pkg.
planes. The evaluation board should be mounted
L1 Inductor, 0603 Pkg.
to an appropriate heat sink. The evaluation circuit
U1 HMC580ST89 / HMC580ST89E
board shown is available from Hittite upon request.
PCB [2] 107368 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
[3] Evaluation board tuned for 900 MHz operation

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 151
Application Support: Phone: 978-250-3343 or apps@hittite.com

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