S T M4433A

S amHop Microelectronics C orp.

J an.25 2005

P -C hannel E nhancement Mode Field E ffect Transistor

P R ODUC T S UMMAR Y F E AT UR E S
5
V DS S ID R DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON ).
R ugged and reliable.
35 @ V G S = -10V
-30V -6A S urface Mount P ackage.
55 @ V G S = -4.5V

D D D D
8 7 6 5

S O-8
1
1 2 3 4
S S S G

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter S ymbol Limit Unit
Drain-S ource Voltage V DS -30 V
Gate-S ource Voltage V GS 20 V

Drain C urrent-C ontinuous a @ T J =25 C ID -6 A

b
-P ulsed IDM -30 A

Drain-S ource Diode Forward C urrent a IS -1.7 A

Maximum P ower Dissipation a PD 2.5 W

Operating Junction and S torage T J , T S TG -55 to 150 C
Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-Ambient a R JA 50 C /W

1
 S T M4433A
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
5
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA -30 V
Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1 -1.9 -3.0 V
V GS = -10V, ID =-5.8A 21 35 m-ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS = -4.5V, ID = -2.0A 40 55 m-ohm
On-S tate Drain Current ID(ON) V DS = -5V, V GS = -10V -20 A
Forward Transconductance gFS V DS = -15V, ID = - 5.8A 8.5 S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance C IS S 920 PF
V DS =-15V, V GS = 0V
Output Capacitance C OS S 270 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 170 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V D = -15V, 8.6 ns
R ise Time tr ID = -1A, 35.3 ns
V GE N = - 10V,
Turn-Off Delay Time tD(OFF) R GE N = 6 -ohm 36.9 ns
Fall Time tf 36.3 ns
V DS =-15V, ID=-5.8A,V GS =-10V 17.5 nC
Total Gate Charge Qg
V DS =-15V, ID=-5.8A,V GS =-4.5V 9.4 nC
Gate-S ource Charge Q gs V DS =-15V, ID = -5.8A, 2.9 nC
Gate-Drain Charge Q gd V GS =-10V 4.8 nC
2
S T M4433A
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage VSD V GS = 0V, Is =-1.7A -0.77 -1.2 V

Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
20 25
-V G S =4.5V -V G S =4V
-V G S =10V
16 -V G S =3.5V 20
-I D , Drain C urrent (A)

-I D , Drain C urrent (A)

12 15
-V G S =3V 125 C

8 10

25 C
4 5
-55 C
-V G S =2V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.8 1.6 2.4 3.2 4.0 4.8

-V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

1500 1.8
V G S =-10V
1250 1.6 I D =-5.8A
R DS (ON) , On-R es is tance
C , C apacitance (pF )

1000 1.4
C is s
(Normalized)

750 1.2

500 1.0

C os s
250 0.8
C rs s
0 0.6
0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125

-V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C )

F igure 3. C apacitance F igure 4. On-R es is tance Variation with

Temperature

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 S T M4433A
1.3 1.3

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

V DS =V G S I D =-250uA
1.2 I D =-250uA 1.2

B V DS S , Normalized
1.1 1.1
V th, Normalized

1.0 1.0
5 0.8 0.9

0.6 0.8

0.4 0.7
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

15 20.0
V G S =0V
gF S , T rans conductance (S )

12
-Is , S ource-drain current (A)

10.0

3
V DS =-15V
0 1.0
0 5 10 15 20 0.4 0.6 0.7 0.9 1.1 1.3

-I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V )

F igure 7. T rans conductance V ariation F igure 8. B ody Diode F orward V oltage
with Drain C urrent V ariation with S ource C urrent

10 50
-V G S , G ate to S ource V oltage (V )

V DS =-15V it
8 10 L im 10
I D =-5.8A N)
-I D , Drain C urrent (A)

ms
DS
(O 10
R 0m
s
6 1s
DC
1
4

2 0.1 V G S =-10V
S ingle P ulse
T A =25 C
0 0.03
0 3 6 9 12 15 18 21 24 0.1 1 10 30 50

Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V )

F igure 9. G ate C harge F igure 10. Maximum S afe
O perating Area
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S T M4433A

-V DD
ton toff

V IN
RL td(on) tr
90%
td(off)
90%
tf 5
D V OUT
VG S V OUT 10% 10%
R GE N G
90%
50% 50%
S V IN
10%
INVE R TE D
P ULS E WIDTH

F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms

1
T ransient T hermal Impedance

Duty C ycle=0.5
r(t),Normalized E ffective

0.2

0.1 P DM
0.1
0.05 t1
t2

0.02 1. R thJ A (t)=r (t) * R thJ A

2. R thJ A =S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
S ingle P uls e 4. Duty C ycle, D=t1/t2
0.01
-4 -3 -2 -1
10 10 10 10 1 10 100

S quare Wave P uls e Duration (s ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

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S T M4433A

PAC K AG E OUT LINE DIME NS IONS

S O-8

E
D

0.015X45°
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0° 8° 0° 8°

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S T M4433A

SO-8 Tape and Reel Data

SO-8 Carrier Tape

unit:㎜
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
ψ1.5
SOP 8N ψ1.5 12.0 5.5 8.0 4.0 2.0 0.3
6.40 5.20 2.10 + 0.1 1.75
150㏕ (MIN) ±0.3 ±0.05 ±0.05 ±0.05
- 0.0

SO-8 Reel

UNIT:㎜

TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 ㎜ 330 62 12.4 16.8 ψ12.75 2.0

ψ330
± 1 ±1.5 + 0.2 - 0.4 + 0.15 ±0.15