14 - Semiconductor Electronics

Recommended MCQs - 150 Questions - Semiconductor
Electronics Contact Number: 9667591930 / 8527521718
Question 1. Question 4.
In a good conductor, the energy gap between the The energy band diagrams for semiconductor samples of
conduction band and the valence band is silicon are as shown. We can then assert that
(1) Infinite
(2) Wide
(3) Narrow
(4) Zero
1. Sample X is undoped while samples Y and Z have
been doped with a third group and a fifth group impurity
respectively
Question 2.
2. Sample X is undoped while both samples Y and Z
Carbon, Silicon, and Germanium atoms have four have been doped with a fifth group impurity
valence electrons each. Their valence and conduction
bands are separated by energy gaps represented by 3. Sample X has been doped with equal amounts of third
(E ) ,(E ) and (E ) respectively. Which one of and fifth group impurities while samples Y and Z are
g g g
C Si Ge
undoped
the following relationships is true in their case ?
4. Sample X is undoped while samples Y and Z have
1. (E g)
C
<(E g)
Ge been doped with a fifth group and a third group impurity
respectively.
2. (E g
)
C
>(E g
)
Si
3. (E g)
C
=(E g)
Si
Question 5.
4. (E g)
C
<(E g)
Si A p-n photodiode is fabricated from a semiconductor with a
band-gap of 2.5 eV. It can detect a signal of wavelength:
1. 6000 Å
Question 3.
In the energy band diagram of a material shown below, 2. 4000 nm
the open circles and filled circles denote holes and
electrons respectively. The material is a/an: 3. 6000 nm
4. 4000 Å
1. p-type semiconductor
2. insulator
3. metal
4. n-type semiconductor
Page: 1
In the energy band diagram of a material shown below, Which of the energy band diagrams shown in the figure
the open circles and filled circles denote holes and corresponds to that of a semiconductor?
electrons respectively. The material is a/an:
1.
2.
1. p-type semiconductor
2. insulator
3. metal
3.
4. n-type semiconductor
Question 7.
The forbidden gap in the energy bands of germanium at 4.
room temperature is about
(1) 1.1 eV
(2) 0.1 eV Question 9.
(3) 0.67 eV Choose the only false statement from the following:
(4) 6.7 eV (1) The resistivity of a semiconductor increases with an
increase in temperature.
(2) Substances with an energy gap of the order of 10eV
are insulators.
(3) In conductors, the valence and conduction bands may
overlap.
(4) The conductivity of a semiconductor increases with
increases in temperature.
Page: 2

In semiconductors at room temperature: C and Si both have the same lattice structure, having 4
bonding electrons in each. However, C is an insulator
(1) The valence band is completely filled and the whereas Si is an intrinsic semiconductor. This is because:
conduction band is partially filled
1. in the case of C, the valence band is not completely
(2) The valence band is completely filled filled at absolute zero temperature.
(3) The conduction band is completely empty 2. in the case of C, the conduction band is partly filled
(4) The valence band is partially empty and the even at absolutely zero temperature.
conduction band is partially filled 3. the four bonding electrons in the case of C lie in the
second orbit, whereas in the case of Si, they lie in the
third.
Question 11. 4. the four bonding electrons in the case of C lie in the
A semiconductor is known to have an electron third orbit, whereas for Si, they lie in the fourth orbit.
concentration of 8 × 10 cm-3 and hole concentration
13
of 5 × 10 cm-3. The semiconductor is

2
Question 14.
1. N-type
A Ge specimen is doped with Al. The concentration of
2. P-type acceptor atoms is ~10 atoms /m . Given that the
21 3
3. intrinsic intrinsic concentration of electron hole pairs is ~10 /m 19 3
, the concentration of electrons in the specimen is

4. insulator
(1) 10 17
/m
3
(2) 10 15
/m
3
Question 12.
(3) 10 4
/m
3
If a small amount of aluminium is added to the silicon

crystal (4) 10 2
/m
3
1. Its resistance is decreased

2. It becomes a p-type semiconductor
Question 15.
3. There will be less free-electron than holes in
semiconductor Pure Si at 500 K has equal number of electron (n ) and e
hole (n ) concentrations of 1. 5 × 10 m . Doping by

h
16 −3
4. All of these are correct indium increases n to 4. 5 × 10 m . The doped 22 −3

h
semiconductor is of
(1) n-type with electron concentration
22 −3
ne = 5 × 10 m
(2) p-type with electron concentration

23 −3
ne = 2. 5 × 10 m
(3) n-type with electron concentration

10 −3
ne = 2. 5 × 10 m
(4) p-type with electron concentration n e = 5 × 10

9 −3
m
Page: 3

In a semiconducting material, the mobilities of electrons The reverse bias in a junction diode is changed from 5V
and holes are μ and μ respectively. Which of the
e h to 15V then the value of current changes from 38μA to
following is true? 88 μA. The resistance of junction diode will be:
(1) μ >μ
e h
1. 4 × 105 Ω
(2) μe <μ h
2. 3 × 105 Ω
(3) μe =μ h
(4) μe <0; μ >0 3. 2 × 105 Ω

h
4. 106 Ω
Question 17.
The net charges on p-type semiconductor and n -type Question 20.
semiconductor are, respectively:
Out of tha following PN junction diodes, which one is
1. Positive, negative forward biased ?
2. Negative, positive
3. Positive, positive
4. Zero, zero 1.
Question 18.
Pure Si at 500 K has equal number of electron (ne) and 2.
hole (nh) concentrations of 1.5 × 1016 m–3. Doping by
indium increases nh to 4.5 × 1022 m–3. The doped
semiconductor is of :
3.
1. P-type having electron concentrations ne = 5 × 109 m–
3
2. n-type with electron concentrations ne = 5 × 1022 m–3 4.
3. P-type with electron concentrations ne = 2.5 × 1010 m–

3
4. n-type with electron concentrations ne = 2.5 × 1023 m– Question 21.

3 If in a reverse-biased p − n junction, an increase in
carrier concentration takes place due to the creation of
new hole-electron pairs by the light of wavelength less
than or equal to 620 nm, then the bandgap is:
1. 1 eV
2. 2 eV
3. 20 eV
4. 0.2 eV
Page: 4

The circuit has two oppositely connected ideal diodes in What is the equivalent resistance across the terminals of
parallel. What is the current flowing in the circuit? the battery if the diodes are ideal?
1. 10 Ω
1. 1.33 A 2. 20 Ω
2. 1.71 A 3. 15 Ω
3. 2.00 A
4. 10
3
Ω
4. 2.31 A
Question 26.
Which circuit will not show current in ammeter?
Question 23.
When a p-n junction is forward biased:
1. Depletion region becomes thick
2. p-side is at a higher potential than n side
3. Current flowing is zero 1.
4. Effective resistance is of the order of 10 6

W
Question 24.
2.
A potential barrier of 0.50 V exists across a P-N junction.
If the depletion region is 5. 0 × 10 −7
m wide, the
intensity of the electric field in this region is
1. 1. 0 × 10 6
V /m
2. 1. 0 × 10 5
V /m
3. 2. 0 × 10 5
V /m
3.
4. 2. 0 × 10 6
V /m
4.
Page: 5

In the given circuit, PN-junction diodes
D1 , D2 , are ideal, for the following potential of
and D3
In the given figure, a diode D is connected to an external A and B, the correct increasing order of resistance
resistance R=100Ω and an e.m.f. of 3.5 V. If the barrier between A and B will be :
potential developed across the diode is 0.5 V, the current
in the circuit will be:
1. 30 mA
2. 40 mA (i) –10V, –5V
3. 20 mA (ii) –5V, –10V
(iii) –4V, –12V
4. 35 mA
1. (i) < (ii) < (iii)
2. (iii) < (ii) < (i)
Question 28. 3. (ii) = (iii) < (i)
In which of the following condition, diffusion current in 4. (i) = (iii) < (ii)
p − n junction is more than drift current ?
1. Forward biasing
2. Reverse biasing Question 31.
3. No biasing In a PN-junction diode
4. All of these 1. The current in the reverse biased condition is generally

very small
2. The current in the reverse biased condition is small but
Question 29. the forward biased current is independent of the bias
voltage
The depletion layer in the P–N junction region is caused
by : 3. The reverse biased current is strongly dependent on the
applied bias voltage
1. the drift of holes
4. The forward biased current is very small in
2. diffusion of charge carriers comparison to reverse biased current
3. migration of impurity ions
4. drift of electrons
Page: 6

When forward bias is applied to a P-N junction, then The current through an ideal p-n junction diode shown in
what happens to the potential barrier V , and the width
B the circuit will be -
of charge depleted region x
(1) V increases, x decreases
B
(2) V decreases, x increases

B
(3) V increases, x increases

B
(4) V decreases, x decreases

B
Question 33.
1. 5 A
Two PN-junctions can be connected in series by three
different methods as shown in the figure. If the potential 2. 0.2 A
difference in the junctions is the same, then the correct
connections will be 3. 0.6 A
4. Zero
Question 36.
In the circuit shown, l 1 and l2 are respectively (If diodes
are ideal)
1. In the circuit (1) and (2)
4. Only in the circuit (1)
1. 0, 0
Question 34.
2. 5 mA, 5mA
The diode used in the circuit shown in the figure has a
constant voltage drop of 0.5 V at all currents and a 3. 5 mA, 0
maximum power rating of 100 milliwatts. What should 4. 0, 5 mA
be the value of the resistor R, connected in series with the
diode for obtaining maximum current
(1) 1.5 Ω
(2) 5 Ω
(3) 6.67 Ω
(4) 200 Ω
Page: 7

In the given figure, potential difference between A and B For the given circuit of P-N junction diode which is
is correct : -
(1) In F.B. the voltage across R is V

(2) In R.B. the voltage across R is V
(1) 0
(3) In F.B. the voltage across R is 2 V
(2) 5 volt
(4) In R.B. the voltage across R is 2 V
(3) 10 volt
(4) 15 volt
Question 41.
In a p–n junction photocell, the value of the photo
Question 38. electromotive force produced by monochromatic light is
In a PN-junction diode not connected to any circuit proportional to:
(1) The intensity of the light falling on the cell
(1) The potential is the same everywhere
(2) The frequency of the light falling on the cell
(2) The P-type is at higher potential than the N-type side
(3) The voltage applied at the p–n junction
(3) There is an electric field at the junction directed from
the N- type side to the P- type side (4) The barrier voltage at the p–n junction
(4) There is an electric field at the junction directed from

the P-type side to the N-type side
Question 42.
Of the diodes shown in the following diagrams, which
Question 39. one of the diode is reverse biased ?
Barrier potential of a p-n junction diode does not depend

on -
(1) diode design
1.
(2) temperature
(3) forward bias
(4) doping density
2.
3.
4.
Page: 8

Application of a forward bias to a p-n junction: Which of the following graphs may correctly represent
the variation of current (l) with potential difference (V)
(1) widens the depletion zone. across a zener diode ?
(2) increases the number of donors on the n side.
(3) increases the potential difference across the depletion
zone.
(4) increases the electric field in the depletion zone.
1.
Question 44.
In a PN junction : -
(1) High potential at N side and low potential at P side
(2) High potential at P side and low potential at N side
(3) P and N both are at same potential 2.
(4) Undetermined
Question 45.
Reverse bias applied to a junction diode
3.
(1) Lowers the potential barrier
(2) raises the potential barrier
(3) increases the majority carrier current
(4) increases the minority carrier current
4.
Question 46.
The correct symbol for zener diode is
1.
2.
3.
4.
Page: 9

What is the reading of the ideal ammeter A and A
1 2 In the given circuit power developed in 2 kΩ resistor is
connected in the given circuit diagram, if p − n junction
diodes are ideal?
1. 36 mW
2. 12 mW
3. 144 mW
1. 2 A and zero 4. 72 mW
2. 3 A and 2 A
3. 2 A and 3 A
Question 51.
4. Zero and 2 A
A 2V battery is connected across the points A and B as
shown in the figure given below. Assuming that the
resistance of each diode is zero in forward bias and
Question 49. infinity in reverse bias, the current supplied by the
battery when its positive terminal is connected to A is
The given circuit has two ideal diodes connected as
shown in the figure below. The current flowing through
the resistance R1 will be:
1. 0.2 A
2. 0.4 A
3. Zero
4. 0.1 A
1. 2.5 A
2. 10.0 A
3. 1.43 A
4. 3.13 A
Page: 10

The given circuit has two ideal diodes connected as Zener breakdown will occur if :
shown in the figure below. The current flowing through 1. Impurity level is low
the resistance R1 will be:
2. Impurity level is high
3. Impurity is less in n-side
4. Impurity is less in p-side
Question 56.
The LED
1. Is reverse biased
1. 2.5 A 2. Is forward biased
2. 10.0 A 3. Can be made of GaAs
3. 1.43 A 4. Both (2) & (3) are correct
4. 3.13 A
Question 57.
Question 53. A photocell is illuminated by a point source of radiation
4 m away. If same source is kept at 8 m away, then the
The given circuit has two ideal diodes connected as number of photoelectrons emitted
shown in the figure below. The current flowing through
the resistance R will be
1
1. Becomes four times the initial value
2. Becomes one-fourth of initial value
3. Remains unchanged
4. Becomes half of the initial value
(1) 2.5 A
Question 58.
(2) 10.0 A
Which of the following-junction is used unbiased?
(3) 1.43 A
1. Photo diode
(4) 3. 13 A
2. LED
3. Zener diode
Question 54. 4. Solar cell
An LED is constructed from a p-n junction diode using
GaAsP. The energy gap is 1.9 eV. The wavelength of the
light emitted will be equal to:
1. 10.4 ×10 −26
m
2. 654 nm
3. 654 m
4. 654 ×10 −11
m
Page: 11

Which of the following statements is incorrect about For the transistor circuit shown below, if β = 100, voltage
LED ? drop between emitter and base is 0.7 V, then value of
V will be :
1. It require low operational voltage CE
2. It has fast on off switching capability

3. The band width of emitted light is 100 A to 10000 A
4. It does not require warm-up time
Question 60.
A Zener diode is used to obtain a constant voltage. If 1. 10 V
applied voltage V changes, then (V is more than Zener
voltage ) 2. 5 V
3. 13 V
4. 0 V
Question 62.
The given graph represents V-I characteristic for a
semiconductor device. Which of the following statement
is correct?
1. i1 and i2 change
2. i2 and V0 change and i3 is constant
3. i2 and V0 don't change while i3 changes
4. i3 and V0 don't change while i2 changes

(1) It is V-I characteristic for solar cell where point A
represents open circuit voltage and point B short circuit
current
(2) It is for a solar cell and points A and B represent open

circuit voltage and current, respectively
(3) It is for a photodiode and points A and B represent

open circuit voltage and current, respectively
(4) It is for a LED and points A and B represents open

circuit voltage and short circuit current respectively
Page: 12

A zener diode is shown in the following circuit diagram. The electrical circuit used to get smooth output from a
When the source voltage fluctuates such that V > V z rectifier circuit is called
,then
1. Oscillator
2. Filter
3. Amplifier
4. Logic gates
Question 66.
Current I1 through the Zener diode shown in the circuit
is-
(1) All the current I1, I2 and I3 change
(2) Only I1 and I2 change and I3 remains constant
(3) Only I1 and I3 change and I2 remains constant
(4) All the currents remain constant
Question 64. 1. Zero

If in a p-n junction, a square input signal of 10V is 2. 0.6 mA
applied as shown,
3. 0.2 mA
4. 0.8 mA
then the output across RL will be
(1)
(2)
(3)
(4)
Page: 13

A Zener diode, having breakdown voltage equal to 15 V, A forward-biased diode is treated as:
is used in a voltage regulator circuit shown in the figure.
The current through the diode is : 1. An open switch with infinite resistance
2. A closed switch with a voltage drop of 0 V
3. A closed switch in series with a battery with voltage of
0.7 V
4. A closed switch in series with small resistance and a
battery
(1) 10 mA Question 71.

(2) 15 mA The output in the circuit shown in the figure taken across
(3) 20 mA a capacitor is :
(4) 5 mA
Question 68.
If a half-wave rectified voltage is fed to a load resistor, 1.
for which part of the cycle, the load current will flow?
1. 0°–90°
2. 90°–180° 2.
3. 0°–180°
4. 0°–360° 3.
Question 69.
4.
In the following circuit, find I and I .
1 2
Question 72.
Zener diode is used for:-
(1) Rectification
(2) Stabilisation
(1) 0, 0
(3) Amplification
(2) 5 mA, 5 mA
(4) Producing oscillations in an oscillator
(3) 5 mA, 0
(4) 0, 5 mA
Page: 14

An n − p − n transistor having a.c. current gain of 50 is In the given transistor circuit, the base current is 35 μA.
to be used to make an amplifier of voltage gain 6. What The value of R is
b
will be power gain of the amplifier ?

1. 300
2. 600
3. 750
4. 400
Question 74.
A transistor is used in common emitter mode in an 1. 100 kΩ
amplifier circuit. When a signal of 10 mV is added to the
2. 200 kΩ
base-emitter voltage, the base current changes by 15 μA
and the collector current changes by 1.5 mA. The current 3. 300 kΩ
gain b will be
4. 400 kΩ
1. 50
2. 48
3. 100
Question 77.
4. 200
For a transistor amplifier, the power gain and voltage
gain are 150 and 10 respectively. The current gain is-
Question 75. 1. 1
10
In a common emitter circuit if VCC is changed by 0.2 V,

2. 1
collector current changes by 4 x 10–3 mA. The output

15
resistance will be: 3. 15
1. 10 kΩ 4. 1500
2. 30 kΩ
3. 50 kΩ
4. 70 kΩ
Page: 15

For transistor action In an amplifier an npn-transistor is used in common-
emitter mode. If β =25, then what will be the collector
(a) Base, emitter and collector regions should have current if emitter current is 13 mA ?
similar size and doping concentrations.
1. 13.5 mA
(b) The base regions must be very thin and lightly doped.
2. 12.5 mA
(c) The emitter-base junction is forward biased and the
base-collector junction is reverse biased. 3. 11 mA
(d) Both the emitter-base junction as well as the base- 4. 10.5 mA
collector junction are forward biased.
Which of the following pairs of statements is correct?
Question 82.
(1) (d) and (a)
For transistor action, which of the following statements is
(2) (a) and (b) correct:
(3) (b) and (c) (1) Base, emitter, and collector regions should have
(4) (c) and (d) similar size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) Both the emitter junction as well as the collector
Question 79. junction are forward biased.
The input resistance of a silicon transistor is 100 Ω. Base (4) None of the above.
current is changed by 40 µA which results in a change in
collector current by 2 mA. This transistor is used as a
common emitter amplifier with a load resistance of 4
KΩ. The voltage gain of the amplifier is- Question 83.
1. 3000 In an NPN transistor, 108 electrons enter the emitter in
2. 4000 10
−8
s. If 1% electrons are lost in the base, the fraction of
current that enters the collector and the current
3. 1000 amplification factor are, respectively:
4. 2000 1. 0.7 and 50
2. 0.9 and 90
Question 80. 3. 0.8 and 49
The emitter-base junction of a transistor is …… biased 4. 0.99 and 99

while the collector-base junction is ……. biased
(1) Reverse, forward Question 84.

(2) Reverse, reverse When a transistor is used in common emitter mode as an
(3) Forward, forward amplifier
(4) Forward, reverse 1. Base-emitter junction is forward biased

2. Base-emitter junction is reverse biased
3. Base-collector junction is forward biased
4. Input is connected in series with voltage applied across
base-collector junction
Page: 16

For the CE transistor amplifier, the audio signal voltage In a transistor circuit shown here, the base current is 35 μ
across the collector resistance of 2kΩ is 4V. If the current A and the potential difference across emitter-base
amplification factor of the transistor is 100 and the base junction is 4.5 V. The value of the resistor Rb is
resistance is 1kΩ, then the input signal voltage is:
1. 10 mV
2. 20 mV
3. 30 mV
4. 15 mV
1. 128.5 kΩ
Question 86. 2. 257 kΩ
In an NPN transistor amplifier if 98% of electrons 3. 380.05 kΩ
emitted from the emitter reach the collector, then the
value of collector current for the base current of 40 μA 4. None of these
will be-
1. 1.96 mA
Question 89.
2. 1.92 mA
In a transistor circuit shown here the base current is 35
3. 1.96 A µA.The value of the resistor Rb is (VBE is 4.5 V) :
4. 1.92 A
Question 87.
A n-p-n transistor operates in a common emitter mode as
shown. Given that IC
= 4 mA,
V CE
= 4 V, V BE = 0. 6 V and β = 100. The value
dc
of R is:
L
1. 128.5 kΩ
2. 257 kΩ
3. 5 kΩ
4. 2.5 kΩ
1. 1 kΩ
2. 2 kΩ
3. 3 kΩ
4. 4 kΩ
Page: 17

In a transistor, a change of 8.0 mA in the emitter current In the circuit given below, if V CE is 5 V and
produces a change of 7.8 mA in the collector current. R = 4 × 10 Ω , then current gain is ( N eglect V
5
)BE
What change in the base current is necessary to produce

the same change in the collector current
1. 50 μA
2. 100 μA
3. 150 μA
4. 200 μA
Question 91.
1. 97
In a common emitter transistor amplifier, the audio signal
vlotage across the collector is 3V. The resistance of 2. 98
collector is 3kΩ. If current gain is 100 and the base
resistance is 2kΩ, the voltage and power gain of the 3. 99
amplifier is 4. 100
(1) 200 and 1000
(2) 15 and 200
Question 94.
(3) 150 and 15000
Consider an NPN transistor amplifier in the common-
(4) 20 and 2000 emitter configuration. The current gain of the transistor is
100. If the collector current changes by 1 mA, what will
be the change in emitter current?
(1) 1.1 mA
Question 92.
(2) 1.01 mA
Transfer characteristic [output voltage (V ) vs input
0
voltage (V )] for a base biased transistor in CE

i (3) 0.01 mA
configuration is as shown in the figure.For using
(4) 10 mA
transistor as a switch, it is used
Question 95.
In a common emitter amplifier, the phase difference
between input signal and output signal is
1. zero
2. π
3. π
(1) in region III 2
4. π
(2) both in region (I) and (III) 4
(3) in region II
(4) in region I
Page: 18

Use of transistor as an amplifier works in the region - If the current gain in the transistor is 50, then the VCE is
equal to
1. Cut off region
2. Saturation region
3. Passive region
4. Active region
Question 97.
In the circuit shown in the figure, the input voltage Vi is

20 V, VBE = 0, and VCE = 0. The values of IB, IC and β
are given by:
1. 2 V
2. 3 V
3. 4 V
4. 6 V
1. IB = 40 μA, Ic = 10 mA, β = 250
2. I B
= 25 μA, Ic = 5 mA, β = 200
Question 100.
3. I B = 20 μA, Ic = 5 mA, β = 250
A transistor circuit in common emitter configuration is
4. I = 40 μA, Ic = 5 mA, β = 125
shown. The current gain is 100. If
B
VBE ≈ 0, then VCE is given by
Question 98.
When a transistor is used as a switch it is in:
1. Active state
2. Cut off state
3. Saturation state
4. Both cut off state and saturation state are possible 1. 6 V
2. 5 V
3. 4 V
4. 3 V
Page: 19

Find the base resistance R in the circuit below if β
B DC = When NPN transistor is used as an amplifier
90 and V = 0.7 V.
BE
(1) Electrons move from base to collector

(2) Holes move from emitter to base
(3) Electrons move from collector to base
(4) Holes move from base to emitter
Question 104.
A NPN transistor conducts when
1. 83 Ω 1. Both collector and emitter are positive with respect to
the base
2. 41 kΩ
2. Collector is positive and emitter is negative with
3. 83 kΩ
respect to the base
4. 41 Ω
3. Collector is positive and emitter is at same potential as
the base
4. Both collector and emitter are negative with respect to
Question 102.
the base
The variation of output potential V with input potential
0
(V ) in a transistor in CE-mode can be best represented

i
as: Question 105.

When the emitter current increases by 10 mA, the base
current increases by 0.4 mA. The value of voltage gain in
the common emitter configuration of the amplifier will
be:
1. (output and input resistance ratio is 50)

1. 1200
2. 1250
3. 150
4. 120
2.
Question 106.
The transfer ratio of a transistor is 50. The input
resistance of the transistor when used in the common-
3. emitter configuration is 1 KΩ. The peak value for an A.C
input voltage of 0.01 V peak is
(1) 100 μA
(2) 0.01 mA
(3) 0.25 mA
4. (4) 500 μA
Page: 20

For a transistor, the current amplification factor is 0.8 Common emitter circuit is used as amplifier, its current
when it is connected in the common base configuration. gain is 50. If input resistance is 1 kΩ and input voltage is
The transistor is now connected in common emitter 5 volt then output current will be :
configuration. The change in the collector current when 1. 250 mA
the base current changes by 6 mA, is : 2. 30 mA
(1) 6 mA 3. 50 mA
4. 100 mA
(2) 4.8 mA
(3) 24 mA
(4) 8 mA Question 111.
To get output 1 for the following circuit, the correct choice
for the input is:
Question 108.
For a transistor amplifier, the voltage gain
1. remains constant for all frequencies.
2. is high at high and low frequencies and constant in the
middle-frequency range.
1. A = 1, B = 0, C = 0
3. is low at high and low frequencies and constant at mid 2. A = 1, B = 1, C = 0
frequencies. 3. A = 1, B = 0, C = 1
4. A = 0, B = 1, C = 0
4. none of the above.
Question 109.
Question 112.
For the transistor circuit shown below, if β = 100, the
voltage drop between emitter and base is 0.7 V, then The output of the OR gate is 1:
value of VCE will be:
1. Only if both inputs are zero
2. If either or both inputs are 1
3. Only if both inputs are 1
4. If any of the inputs is zero
1. 10 V
2. 5 V
3. 13 V
4. 0
Page: 21

To get output Y = 1 in given circuit which of the A combination of logic gates is shown in the circuit. If A
following input will be correct - is at 0 V and B is at 5 V, then the potential of R is:
A B C
1. 1 0 1 1. 0 V
2 1 1 0 2. 5 V
3. 0 1 0 3. 10 V
4. 1 0 0 4. Any of these

The logic behind 'NOR' gate is that it gives A gate has the following truth table
1. High output when both the inputs are low P1100
2. Low output when both the inputs are low Q1010
3. High output when both the inputs are high R1000
4. None of these
The gate is
(1) NOR
Question 115.
(2) OR
Identify the logic gate which follows the following input-
(3) NAND
output waveform
(4) AND
1. OR gate
2. AND gate
3. NOT gate
4. XOR gate
Page: 22

Logic gates X and Y have the truth tables shown below :
The figure shows a logic circuit with two inputs A and B
and the output C. The voltage waveforms across A, B,
and C are as given. The logic circuit gate is:
When the output of X is connected to the input of Y, the

resulting combination is equivalent to a single :
1. NOT gate
2. OR gate
3. NAND gate
4. AND gate
1. OR gate
2. NOR gate
Question 119. 3. AND gate
For the logic circuit given below, the output Y for A=0, 4. NAND gate
B=0 and A=1, B=1 are
1. 0 and 1
2. 0 and 0
3. 1 and 0
4. 1 and 1
Page: 23

Which one of the following represents an analog circuit A and B are the inputs for the given logic gate. The
diagram for OR gate? output Y will be
1.
1.
2.
2.
3.
3.
4.
4.
Question 123.
In a given circuit as shown the two input waveform A
and B are applied simultaneously. The resultant
waveform Y is
Page: 24

The combination of gates shown in the diagram is
equivalent to:
In the following circuit, the output Y for all possible
inputs A and B is expressed by the truth table:
1. A B Y
0 0 0
1. OR 0 1 0
2. AND 1 0 0
1 1 1
3. NAND
2. A B Y
4. NOT 0 0 1
0 1 1
1 0 1
1 1 0
Question 125.
3. A B Y
If the input to the NOT gate is A, its output is:
0 0 1
1. 0
0 1 0
2. 1
1 0 0
3. A
1 1 1
4. A
4. A B Y
0 0 0
0 1 1
Question 126. 1 0 1
Name the logic gate shown below 1 1 1
Question 128.
The circuit is equivalent to:
1. NOR-gate
2. NAND-gate
3. AND-gate 1. AND gate
4. OR-gate 2. NAND gate
3. NOR gate
4. OR gate
Page: 25

What is the name of the logic gate represented by the The given electrical network is equivalent to:
following symbol ?
1. OR gate
1. NOR
2. NOR gate
2. OR
3. NOT gate
3. NAND
4. AND gate
4. AND
Question 133.
Question 130.
Which of the following logic gate is a universal gate?
Which of the following truth table is correct for function
y in the given combination of logic gates? 1. OR
2. NOT
3. AND
4. NOR
Question 134.
1. 2. The given electrical network is equivalent to
1. AND gate
3. 4.
2. OR gate
3. NOR gate
Question 131. 4. NOT gate
The circuit shown below is an electrical analogue for
which of the following logic gates?
1. AND gate
2. OR gate
3. NOT gate
4. NOR gate
Page: 26

Which logic gate is represented by the following The combination of gates shown below is equivalent to:
combination of logic gates?
1. AND gate
(1) OR 2. XOR gate
(2) NAND 3. NOR gate
(3) AND 4. NAND gate
(4) NOR
Question 139.
Question 136. How many minimum number of NOR gates are required
The circuit shown below is an electrical analog for which to obtain an AND gate?
of the following logic gates? 1. One
2. Two
3. Three
4. Five
1. AND gate
Question 140.
2. OR gate
The diagram of a logic circuit is given below. The output
3. NOT gate F of the circuit is represented by
4. NOR gate
Question 137.
The shows two NAND gates followed by a NOR gate.
The system is equivalent to the following logic gate
(1) W(X+Y)
(2) W.(X.Y)
(3) W+(X.Y)
(4) W+(X+Y)
(1) OR
(2) AND
(3) NAND
(4) None of these
Page: 27

The Boolean expression for the output Y of the circuit is Following diagram performs the logic function of :
given by
(1) AND gate

(2) NAND gate
1. A
(3) OR gate
2. A + B
(4) XOR gate
3. AB
4. A - B
Question 145.
The following firugre shows a logic gate citrcuit with two
Question 142. inputs A and B the output Y. The voltage waveforms of
Following logic gate is : A, B and Y are as given –
1. AND
2. NAND
3. EX-OR
4. OR The logic gate is –
1. OR gate
2. AND gate
Question 143.
3. NAND gate
The given truth table is for which logic gate : -
4. NOR gate
A B Y
1 1 0
0 1 1
1 0 1
0 0 1
(1) NAND
(2) XOR
(3) NOR
(4) OR
Page: 28

The truth table for the following network is : Following table is for which logic gate:
Input Output
A B C
0 0 1
1.
0 1 1
A B Y
0 0 0
0 1 0 1 0 1
1 0 0
1 1 1 1 1 0
1. AND
2.
2. OR
A B Y
0 0 0 3. NAND
0 1 1 4. NOT
1 0 1
1 1 0
3.
A B Y
Question 148.
0 0 1
0 1 0 The diagram of a logic circuit is given below. The output
1 0 0 F of the circuit is represented by:-
1 1 1
4. None of the above
1. W(X + Y)
2. W·(X · Y)
3. W + (X · Y)
4. W + (X + Y)
Page: 29
Question 149.
Given Truth table is correct for :
1. NAND
2. AND
3. NOR
4. OR
Question 150.
The figure shows two NAND gates followed by a NOR
gate. The system is equivalent to the following logic
gate:
1. OR
2. AND
3. NAND
4. None of these
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Recommended MCQs - 150 Questions - Semiconductor

Electronics Contact Number: 9667591930 / 8527521718

Question 10. Question 13.

of 5 × 10 cm-3. The semiconductor is

3. intrinsic intrinsic concentration of electron hole pairs is ~10 /m 19 3

, the concentration of electrons in the specimen is

If a small amount of aluminium is added to the silicon

1. Its resistance is decreased

hole (n ) concentrations of 1. 5 × 10 m . Doping by

4. All of these are correct indium increases n to 4. 5 × 10 m . The doped 22 −3

(2) p-type with electron concentration

(3) n-type with electron concentration

(4) p-type with electron concentration n e = 5 × 10

Question 16. Question 19.

(4) μe <0; μ >0 3. 2 × 105 Ω

2. n-type with electron concentrations ne = 5 × 1022 m–3 4.

3. P-type with electron concentrations ne = 2.5 × 1010 m–

4. n-type with electron concentrations ne = 2.5 × 1023 m– Question 21.

Question 22. Question 25.

4. Effective resistance is of the order of 10 6

Question 27. Question 30.

3. No biasing In a PN-junction diode

4. All of these 1. The current in the reverse biased condition is generally

Question 32. Question 35.

(2) V decreases, x increases

(3) V increases, x increases

(4) V decreases, x decreases

Question 37. Question 40.

(1) In F.B. the voltage across R is V

(4) There is an electric field at the junction directed from

Barrier potential of a p-n junction diode does not depend

Question 43. Question 47.

Question 48. Question 50.

Question 52. Question 55.

Question 59. Question 61.

2. It has fast on off switching capability

2. i2 and V0 change and i3 is constant

3. i2 and V0 don't change while i3 changes

4. i3 and V0 don't change while i2 changes

(2) It is for a solar cell and points A and B represent open

(3) It is for a photodiode and points A and B represent

(4) It is for a LED and points A and B represents open

Question 63. Question 65.

(1) All the current I1, I2 and I3 change

(2) Only I1 and I2 change and I3 remains constant

(3) Only I1 and I3 change and I2 remains constant

(4) All the currents remain constant

Question 64. 1. Zero

then the output across RL will be

Question 67. Question 70.

(1) 10 mA Question 71.

Question 73. Question 76.

will be power gain of the amplifier ?

In a common emitter circuit if VCC is changed by 0.2 V,

collector current changes by 4 x 10–3 mA. The output

resistance will be: 3. 15

Question 78. Question 81.

Question 80. 3. 0.8 and 49

The emitter-base junction of a transistor is …… biased 4. 0.99 and 99

(1) Reverse, forward Question 84.

(4) Forward, reverse 1. Base-emitter junction is forward biased

Question 85. Question 88.

Question 90. Question 93.

What change in the base current is necessary to produce