American International University- Bangladesh

Faculty of Engineering (EEE)

Electronic Devices Laboratory
Section: W, Group no: 01
Supervised by: Bismoy Jahan

Experiment: 01
Determination of Characteristic Curve of a Diode

Name of student SID

(Submitted By)

Date:
Title: Determination of Characteristic Curve of a Diode

Abstract:

The purpose of the first experiment in the Electronic Device Lab is to learn
about the characteristics of the Volt-Ampere (I-V) semiconductor diode. Since,
the volt - ampere (I-V) characteristics of a diode show how diode current varies
with voltage, this is required to understand the behavior of the diode when
connected to a circuit.

Theory:

Diode Structure: A pn junction is formed within a single silicon piece by

connecting n-type and p-type semiconductor components.

PN Junction: a pn junction that is created by joining individual n-type and p-

type semiconductor components.

Forward/Reverse Bias Characteristics: Describes the behavior of a diode

under forward and reverse bias conditions.

Diode Characteristics: explains the reverse saturation current in reverse bias

and the cut-in voltage necessary for conduction in forward bias.

Figure 1: I-V Characteristics of a Diode

Apparatus:
No. Apparatus Quantit
y
1 Diode 1
2 10k Resistance 1
3 Project Board 1
4 DC Power 1
Supply
5 Multimeter 1

Circuit Diagram:

Figure 2: Circuit diagram for determining diode characteristic in forward bias condition.

Circuit Implementation:

Figure 3: Implemented Circuit for determining diode characteristic in forward bias

condition.
 Experimental Procedure:

I. The 10K resistor's actual value was measured.

II. All components except the power supply, as depicted in the diagram, were
interconnected.
III. The DC power supply was activated, and the voltage across its terminals
was gauged and set to 0.5 V. Following this, the power supply was
deactivated.
IV. The circuit's power supply was then connected and switched on. Before
activation, the power control knob was set to its minimum position,
measuring 0V.
V. The supply voltage was systematically incremented by 1 V at each step,
and the voltages across the Diode (VD) and resistor were measured and
logged in the table.
VI. The current (ID) was calculated, and the table was completed accordingly.
VII. A VD vs ID characteristic curve for the diode was plotted.
VIII. The "knee voltage/threshold" voltage was identified by examining the
graph.
Data Table:

Data Table for Diode characteries:

Vin VD VR ID=VR/10K
(V) (V) (V) (mA)

0.5 0.40 0.14 0.014

1 0.46 0.63 0.063

1.5 0.49 1.11 0.111

2 0.50 1.58 0.158

2.5 0.51 2.03 0.203

3 0.52 2.51 0.251

3.7 0.54 3.18 0.318

4.2 0.54 3.74 0.374

4.7 0.55 4.24 0.424

5.2 0.55 4.72 0.472

5.7 0.56 5.17 0.517

6.2 0.56 5.74 0.574

6.7 0.57 6.21 0.621

7.2 0.57 6.66 0.666

Characteristic Graph of The Experimental Diode:

Discussions and Report Question:

1. VD - ID Characteristic Curve:

The VD - ID characteristic curve illustrates the relationship between diode

voltage (VD) and current (ID). By plotting VD against ID, we can observe how the
diode behaves under different voltage conditions. In terms of the curve's shape,
we can observe that the diode's non-linear behavior is demonstrated by the
current's exponential rise with increasing voltage. The knee voltage, where
significant current begins to flow, can also be identified from the curve.

2. Effect of Reversing Supply Voltage with PIV of 4.8V:

If the supply voltage polarity is reversed for a diode with a Peak Inverse Voltage
(PIV) of 4.8V, the diode will enter the reverse-biased region. In this scenario:
 • To prevent any significant current flow, the diode will block the reverse
voltage up to PIV.

• As the reverse voltage exceeds the PIV, the diode may enter breakdown,
allowing a higher reverse current to pass. This can potentially damage the
diode if the breakdown voltage is exceeded.

In summary, reversing the supply voltage beyond the PIV may lead to increased
reverse current and could potentially result in the breakdown of the diode.

3. Overall Experiment Discussion:

Understanding semiconductor diodes and identifying their characteristic curve

were the goals of the experiment. By following the experimental procedure,
we measured the diode's behavior under different voltage conditions and
plotted the characteristic curve. From the VD vs ID Graph, it is noticeable that
the flow of current increases insignificantly after every increase in the voltage.

But at 3.7 V a significant increase in the current can be noticed. Here at 3.7V
from the power supply the voltage across the diode VD was 0.54V. So, the
knee voltage/ threshold voltage of the diode is 0.54V.

The experiment provided practical insights into diode operation, including

forward and reverse bias conditions. Additionally, safety precautions were
observed to prevent damage to the diode and other components.

Overall, the experiment effectively demonstrated the fundamental properties of

diodes and their importance in electronic circuits.

References:
 American International University–Bangladesh (AIUB) -“Electronic Devices Lab
Manual.”
 Robert L. Boyleston, Louis Natinsky - “Electronic Devices and Circuit Theory.”.
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