Assignment of Applied Physics-II

1. Using Heisenberg uncertainty principle, prove that electron does not exist in the
nucleus.
2. Explain scanning electron microscope with applications
3. A particle is moving in one dimensional potential box of width 25 . Calculate the
probability of finding the particle within an interval of 5 at the centres of the box
4. Calculate the expectation value of x and for the wave function of 1-D potential
box.
5. Obtain the zero point energy of an harmonic oscillator
6. An electron in a metal encounters a barrier layer of height 6eV and thickness 0.5 nm.
If the electron energy of 5 eV , What is the probability of tunnelling through the
barrier?
7. The wave function of a particle is ψ for interval . Find the value of
A.
8. Compare the salient features of Maxwell-Boltzmann , Bose –Einstein and Fermi –
Dirac Distributions
9. Show that Bose Einstein and Fermi Dirac Statics reduces to Maxwell –Boltzmann
statics at high temperature.
10. Write down the short notes on
(i) White /Black Dwarfs star
(ii) Neutron Stars
(iii) Black holes
(iv) Fermi Energy
(v) Rayleigh- Jeans law and Wein’s Law
11. At what temperature can we expect a 10% probability that electrons in a metal will
have an energy which is 1% above ? The Fermi energy of the metal is 5.5 eV.
12. Draw the structure of Sodium Chloride.
13. The first maxima for Bragg’s diffraction of X-rays from KCl crystal (d=0.314 nm)
appears at . Calculate energy of the incident X-rays.
14. The average energy required to create Frenkel defects in an ionic crystal, is
1.4 eV. Calculate the ratio of the number of Frenkel defects at for
1 gm of crystal.
15. Discuss the various kinds of defects in crystals and find out the concentration of
schottky defects in a crystal.
16. Calculate the glancing angles on the cube (100) of a rock salt a
corresponding to second order diffraction maxima for X-rays of wavelength 0.710 .
17. Write the short note on
(i) Zener Diode break down
(ii) Tunnel Diode
(iii) Formation of potential barrier in PN junction
(iv) Photodiode
18. Is Fermi level in intrinsic semiconductor temperature dependent ?
19. The energy gap of the two intrinsic semiconductors A and B are 0.36 eV and 0.72 eV
respectively.
20. Fermi energy of an intrinsic semiconductor is 0.6 V . The low lying energy levels in
conduction band is 0.2 eV above the Fermi level. Calculate the probability of
occupation of this level by an electron at room temperature.