3/24/22, 5:43 PM Saved Questions | Testbook

Saved Questions

764 of 885 -

UPPCL > Test > UPPCL JE EE Full Test 1 Saved

Consider the following statements about IGBT

1. It has high input impedance

2. It has low ON state voltage drop

3. Its switching speed is higher than that of the MOSFET

4. It is a voltage controlled device

Which of the above statements are correct?

1 1, 2 and 3 only

2 2, 3 and 4 only

Incorrect Answer

3 1, 2 and 4 only

Correct Answer
Search

4 1, 2, 3 and 4

Solution: 3 Report

BJT MOSFET IGBT

Bipolar device, Three terminal

Bipolar device Unipolar device device (emitter collector and
gate)

Low input impedance High input impedance High input impedance

Current controlled device Voltage controlled device Voltage controlled device

Low forward voltage drop, low

Low on-state voltage drop and High on-state voltage drop and ON state power loss than
low conduction loss higher conduction loss MOSFET, low conduction loss
than MOSFET

Free from the secondary Secondary breakdown does not

Secondary breakdown occurs
breakdown occur

Negative temperature coefficient Positive temperature coefficient Positive temperature coefficient

Not advisable for parallel

advisable for parallel operation Used for parallel operation
operation

Lower operating higher operating

frequency(10kHz) frequency(100kHz)

On state in the saturation region On state in the ohmic region

Previous Next
Controlled turn on and turn off Control turn on and turn off Controlled turn on and turn off
https://testbook.com/saved-questions/5f147c5787f9ae0d0a2c36c5 1/2
3/24/22, 5:43 PM Saved Questions | Testbook
Controlled turn on and turn off Control turn on and turn off Controlled turn on and turn off
device device device

Turn on and turn off time depend

Smaller turn off time
on junction capacitance

Controlled signal requirement Controlled signal requirement Controlled signal requirement

continuously continuously continuously

Previous Next

https://testbook.com/saved-questions/5f147c5787f9ae0d0a2c36c5 2/2