PMOSFET

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High PMOSFET

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 Transfer Characteristics

VGST is in the order of 2 to 3 V.

3
Output & Switching Characteristics

4
 Comparison of MOSFET and BJT
MOSFET
• Power MOSFET has low
switching losses but its on-
state and conduction losses
are more.
• Voltage controlled device
• Has positive temperature
coefficient.
• Secondary breakdown does
not occurs.
• MOSFETs are available in
500V, 140A.
BJT
• BJT has higher switching
losses and low conduction
losses.
• Current controlled device
• Has negative temperature
coefficient.
• Secondary breakdown
occurs.
• BJTs are available in 1200V,
800A.
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IGBT

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 Basics
• Combination of best qualities from BJT and
PMOSFET.
• Possess high impedance.(MOSFET)
• Has low on-state power loss.(IGBT)
• Free from second breakdown problem.
• Other names
– MOSIGT
– COMFET
– GEMFET
– IGT
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 Structure
• Constructed same as
PMOSFET.
• n+ layer in drain
(PMOSFET) is substituted
by p+ layer (injector
layer) as collector (IGBT).
• n- layer is called drift
region.

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 Equivalent Circuit
• Rd is resistance offered by
n- drift region.
• IGBT structure has a
parasitic thyristor in it.

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 Working
• When collector is made positive with respect to emitter, IGBT
gets forward biased.
• Junction J1 & J2 are reverse biased.
• So no current flows from collector to emitter.
• Gate-emitter voltage crosses threshold value (VGET), n-channel
formed in upper part of p region.
• n-channel short circuits n- region with n+ emitter region.
• Electrons flow from n+ emitter region to n- drift region.
• Simultaneously, p+ collector region injects holes to n- drift
region  injection carrier density in n- region increases 
conduction takes place.

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VI & Transfer Characteristics

11
Switching Characteristics

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 Explanation
• Turn-on time
– Time between instant of forward blocking and
forward on-state.
– ton = tdn+tr
• Turn-off time
– toff = tdf+tf1+tf2
– tdf  delay time
– Tf1  initial fall time
– Tf2  final fall time
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