Power MOSFETs

• Two Types
– Depletion Type
• Channel region is already diffused between the
Drain and Source
• Deplete, or “pinch-off” the Channel
– Enhancement Type
• No channel region exists between the Drain and
Source
• “Invert” the region between the Drain and Source
to induce a channel
1
Depletion MOSFET

2
N-Channel Depletion MOSFET

Normally Reverse-Bias the Gate-Source Junction

3
Enhancement MOSFET

4
 N-Channel Enhancement MOSFET

The Gate-Source Junction will be Forward-Biased

The bias voltage must be greater than a “threshold” voltage
A Channel region is induced between the Drain and Source
5
Drain Characteristics

6
Steady-State Characteristics

7
Switching Characteristics

8
Equivalent Circuit

9
Switching Model

10
Switching Waveforms and Times

11
 Turn-on Delay, td(on) = time to charge the input
capacitance to VT
Rise time, tr = Charging time to charge the input
capacitance to the full gate voltage, VGSP in order to drive
the transistor into the linear region of operation
12
Turn-off delay time, td(off) = time for the input capacitance to
discharge from “overdrive” voltage V1 to pinch-off.
VGS must decrease significantly for VDS to rise.
Fall time, tf = time for the input capacitance to discharge
from pinch-off to the threshold voltage. 13