Green University of Bangladesh

Department of Electrical & Electronic Engineering

Topic: N- Channel enhancement type MOSFET

•Presented By Presented to
•Name : Kazi Midul Islam Rahat Md.Hasan Maruf
• ID : 191001132 Assistant Professor,
•Course Title : VLSI Department of EEE
•Course code : EEE -329
•Dept. : EEE
Definition:
The full form of MOSFET is  metal–oxide–semiconductor field-effect transistor.
A MOSFET is a four-terminal device having source(S), gate (G), drain (D) and body
(B) terminals. In general, The body of the MOSFET is in connection with the source
terminal thus forming a three-terminal device such as a field-effect transistor.

Types of MOSFET
Concept of P-N junction
We know a MOSFET is made from a semiconductor  material such as
silicon. To make a semiconductor a good conductor  we introduce
impurities in the pure crystal. 
There are two types of impurities that are added. If the impurities are
pentavalent, then  the resulting semiconductor is n-type. If the impurities
are trivalent then  the resulting semiconductor is p-type. In n-type electrons
are the  majority of charge carriers again in p-type holes are the  majority of
charge carriers. 

Now if we join them then at the junction the  electrons from n-type will fill
the holes in  p-type, depleting the charges near the junctions. This region is
known as the depletion region. If we connect p-type to the positive terminal
and n-type to the negative terminal of the battery, then the depletion layer
reduces and this is called forward bias . If the polarity of the battery
is reversed the depletion layer increases, and this is called reverse bias.
Structure N- Channel enhancement type of Mosfet

N channel MOSFET are fabricated based on a block of p type

semiconductor . It is called base also called substrate.

On this base the two portion of this p-type substrate are made
highly doped with n type impurity .These two terminals are
called source and drain terminals. Between these terminals we
have a thin layer of insulator or dielectric. Above this insulator
another terminal is attached,  It is called the gate terminal. These
are all four terminals of MOSFET.  the source terminal and
substrate  terminal are connected internally,  this stops any
current flow from the substrate to the sources they are at the
same potential. Thus the MOSFET we see has three terminals.
Working principle of N- Channel enhancement type
of Mosfet
Now If we connect a battery  between drain and
source. This voltage is called Vds, as it's  between the
drain and the source. Also, we can see the graph  of
drain current versus Vds. The positive end of the battery
increases  the potential at the drain terminal,   thus
increasing the depletion region  between the drain and
substrate.  Due to this there will be no current flow from 
the drain to the source and the MOSFET is off.  This is
also called the cutoff region.
Now, to flow current from drain to source we have to create a channel
between them.
So we connect a small  voltage source between the gate and substrate 
with the positive terminal to the gate.  This voltage is called Vgs, as it's 
between the gate and the source. 
This voltage attracts the minority charge carriers –electrons. Due to the
presence of an insulator these electrons cannot flow from the substrate to
the gate thus they gather near  the gate in the substrate. The insulator or
dielectric in MOSFET,  not only blocks the electrons but  also increases
the charge on them,  thus attracting more electrons.
Now, If we increase Vgs more electrons get attracted towards the gate
and these  electrons start filling some of the holes. Thus in this region we
can see there  are no holes but we have free electrons. 
Due to these electrons, the region near the gate  becomes negative or an
n-type semiconductor. 
This creates a channel connecting the source  and the drain. The thickness
of the channel can be controlled by changing the gate voltage.
The voltage at which the channel is  formed is called the threshold
voltage. 
Pinch off point : When we apply a voltage between the source and
drain. This will cause charge movement between the source and drain.
But, it will also change the shape of the channel. Now, the channel begins
to deplete towards the drain end. This is because the drain is at a positive
potential, and negative charges from the channel closest to the drain are
being pulled into the drain.
As we increase the voltage VDS, a point will be reached when the channel
is completely pinched off:

Saturation Region –
 In this region, the devices will have their drain to source
current value as constant without considering the
enhancement in the voltage across the drain to source.
This happens only once when the voltage across the drain
to source terminal increases more than the pinch-off
voltage value. In this scenario, the device functions as a
closed switch where a saturated level of current across the
drain to source terminals flows