STF13NM60N-H

N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET

in TO-220FP

Features
VDSS RDS(on)
Type ID
(@Tjmax) max
STF13NM60N-H 650 V < 0.36 Ω 11 A

■ 100% avalanche tested

■ Low input capacitance and gate charge 3
2
■ Low gate input resistance 1

Application TO-220FP

■ Switching applications

Description
Figure 1. Internal schematic diagram
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new $
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
'

3

3#

Table 1. Device summary

Order codes Marking Packages Packaging

STF13NM60N-H(1) 13NM60N TO-220FP Tube

1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as
“halogen-free” . See Section 4: Package mechanical data.

January 2010 Doc ID 16963 Rev 1 1/13

www.st.com 13
Contents STF13NM60N-H

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 16963 Rev 1

STF13NM60N-H Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 600 V

VGS Gate-source voltage ± 25 V
(1)
ID Drain current (continuous) at TC = 25 °C 11 A
ID Drain current (continuous) at TC = 100 °C 6.93 (1) A
IDM (2) (1)
Drain current (pulsed) 44 A
PTOT Total dissipation at TC = 25 °C 25 W
(3)
dv/dt Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from all three
VISO 2500 V
leads to external heat sink (t=1 s;TC=25 °C)
Tstg Storage temperature –55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V(BR)DSS

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 5 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Tl Maximum lead temperature for soldering purpose 300 °C

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAS 3.5 A
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS 200 mJ
(starting TJ=25 °C, ID=IAS, VDD=50 V)

Doc ID 16963 Rev 1 3/13

Electrical characteristics STF13NM60N-H

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 600 V
breakdown voltage
VDD=480 V, ID = 9 A,
dv/dt (1) Drain source voltage slope 45 V/ns
VGS=10 V
Zero gate voltage VDS = Max rating 1 µA
IDSS
drain current (VGS = 0) VDS = Max rating, @125 °C 10 µA
Gate-body leakage
IGSS VGS = ± 20 V 0.1 µA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on
RDS(on) VGS = 10 V, ID = 5.5 A 0.28 0.36 Ω
resistance
1. Characteristic value at turn off on inductive load

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS=15 V, ID = 5.5 A - 7 - S

Input capacitance
Ciss 790 pF
Output capacitance VDS = 50 V, f = 1 MHz,
Coss - 60 - pF
Reverse transfer VGS = 0
Crss 3.6 pF
capacitance
Equivalent output
Coss eq. (2) VGS = 0, VDS = 0 to 480 V - 135 - pF
capacitance
Qg Total gate charge VDD = 480 V, ID = 11 A, 30 nC
Qgs Gate-source charge VGS = 10 V, - 15 - nC
Qgd Gate-drain charge (see Figure 17) 4 nC
f=1 MHz Gate DC Bias=0
RG Gate input resistance Test signal level = 20 mV - 4.7 - Ω
open drain
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS

4/13 Doc ID 16963 Rev 1

STF13NM60N-H Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 3 ns

VDD = 300 V, ID = 5.5 A
tr Rise time 8 ns
RG = 4.7 Ω VGS = 10 V - -
td(off) Turn-off delay time 30 ns
(see Figure 16)
tf Fall time 10 ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 11 A

-
ISDM (1) Source-drain current (pulsed) 44 A
VSD (2) Forward on voltage ISD = 11 A, VGS = 0 - 1.5 V
trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs 230 ns
Qrr Reverse recovery charge VDD = 100 V - 2 µC
IRRM Reverse recovery current (see Figure 18) 18 A
trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs 290 ns
Qrr Reverse recovery charge VDD = 100 V, Tj = 150 °C - 190 µC
IRRM Reverse recovery current (see Figure 18) 17 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 16963 Rev 1 5/13

Electrical characteristics STF13NM60N-H

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM03259v1
ID
(A)

10
is
R rea
)
on
ax a
S(
m his

D
by in t

10µs
ite tion
Li era

1
d

100µs
p
O
m

1ms
Tj=150°C
0.1 10ms
Tc=25°C
Sinlge
pulse
0.01
0.1 1 10 100 VDS(V)

Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK
AM03260v1
ID
(A)

10µs
is

10
R ea
n)
ax ar
(o
DS
m is
by in th

100µs
ite tion
Lim era
d
Op

1 Tj=150°C 1ms
Tc=25°C
Sinlge 10ms
pulse
0.1
0.1 1 10 100 VDS(V)

Figure 6. Output characteristics Figure 7. Transfer characteristics

AM03300v1 AM03301v1
ID ID
(A) VGS=10V (A)

25
20

20
15
15
10
10

5
5

0 0
0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 10 VGS(V)

6/13 Doc ID 16963 Rev 1

STF13NM60N-H Electrical characteristics

Figure 8. Transconductance Figure 9. Static drain-source on resistance

AM03303v1 AM03302v1
GFS RDS(on)
(S) (Ω)
TJ=-50°C
ID=5.5A
8.5 0.30 VGS=10V

7.5
0.28
6.5
5.5 TJ=150°C 0.26
4.5
3.5 0.24

2.5 TJ=25°C 0.22

1.5
0.5 0.2
0 2 4 6 8 10 ID(A) 0 2 4 6 8 10 ID(A)

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
AM03305v1 AM03304v1
VGS C
(V) (pF)
VDD=480V VGS
12
ID=11A 500
VDS
1000
10 Ciss
400
8
300 100
6
Coss
200
4 10

2 100 Crss

0 0 1
0 10 20 30 Qg(nC) 0.1 1 10 100 VDS(V)

Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
AM03306v1 AM03307v1
VGS(th) RDS(on)
(norm) (norm)
1.10 2.1

1.9

1.00 1.7

1.5

0.90 1.3

1.1

0.80 0.9

0.7
0.70 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)

Doc ID 16963 Rev 1 7/13

Electrical characteristics STF13NM60N-H

Figure 14. Source-drain diode forward Figure 15. Normalized BVDSS vs temperature
characteristics
AM03309v1 AM03308v1
VSD BVDSS
(V) Tj=-50°C (norm)
1.2 1.07

1.05
1.0
1.03
0.8
Tj=150°C Tj=25°C 1.01
0.6
0.99
0.4
0.97

0.2 0.95

0 0.93
0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 125 TJ(°C)

8/13 Doc ID 16963 Rev 1

STF13NM60N-H Test circuits

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100µH VD
G D.U.T. DIODE 2200 3.3
µF µF VDD
S B 3.3 1000
B B µF µF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

Doc ID 16963 Rev 1 9/13

Package mechanical data STF13NM60N-H

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

10/13 Doc ID 16963 Rev 1

STF13NM60N-H Package mechanical data

Table 9. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

Figure 22. TO-220FP drawing

L7

A
B

D
Dia

L5
L6

F1 F2

H G
G1

L2 L4

L3
7012510_Rev_K

Doc ID 16963 Rev 1 11/13

Revision history STF13NM60N-H

5 Revision history

Table 10. Document revision history

Date Revision Changes

08-Jan-2010 1 First release

12/13 Doc ID 16963 Rev 1

STF13NM60N-H

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Doc ID 16963 Rev 1 13/13