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Lecture Notes in Electrical Engineering 462
Rabindranath Bera
Subir Kumar Sarkar
Swastika Chakraborty
Editors
Advances in
Communication,
Devices and
Networking
Proceedings of ICCDN 2017
Lecture Notes in Electrical Engineering
Volume 462
The audience for the books in LNEE consists of advanced level students, researchers, and industry
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For general information about this series, comments or suggestions, please use the contact
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To submit a proposal or request further information, please contact the appropriate Springer
Publishing Editors:
Asia:
Swastika Chakraborty
Editors
Advances in Communication,
Devices and Networking
Proceedings of ICCDN 2017
123
Editors
Rabindranath Bera Swastika Chakraborty
Department of Electronics Department of Electronics
and Communication Engineering and Communication Engineering
Sikkim Manipal Institute of Technology Sikkim Manipal Institute of Technology
Majitar, Rangpo, Sikkim Majitar, Rangpo, Sikkim
India India
This Springer imprint is published by the registered company Springer Nature Singapore Pte Ltd.
part of Springer Nature
The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721,
Singapore
Preface
v
vi Preface
We would like to thank the Patrons, General Chairs, the members of the
Technical Programme Committees, Advisory Committees and reviewers for their
excellent and tireless work. We also want to thank Springer for the support and the
authors for the success of the conference.
CHIEF PATRON
Dr. Somnath Mishra, VC, SMU
PATRON
Dr. Ashis Sharma, Registrar, SMU
Dr. Amik Garg, Director, SMIT
Dr. Sadasivan Thekkey Veetil, Addl. Director, SMIT
GENERAL CHAIR
Dr. Rabindranath Bera, ECE, SMIT
vii
viii Organization
CONVENER
Mr. Samarendra Nath Sur
Co-CONVENER
Mr. Soumyasree Bera
Mr. Arun Kumar Singh
Mr. Amit Agarwal
Contents
xi
xii Contents
xxi
xxii About the Editors
Keywords Graphene Graphene nanoribbon Thermal coefficient
Interconnects Radial distribution function
1 Introduction
At present era, copper is used for interconnection at the BEOL instead of aluminum, as
conductivity of copper is six times more than aluminum, due to which chips had
smaller metal components and less energy is used to pass electricity through it which
lead to better performance in signal processing from transistor to transistor with
minimal heat loss. Cu is a candidate for global interconnection in the upper-level
metallization in ULSI technology due to its low resistivity and high electromigration
resistance however, the major obstacles to use due to stability issues like copper drift
out of wiring, corrodes copper by exposure of oxygen and water, electro-migration
thins copper interconnects and due to which there is increase in resistance of inter-
connects and break them [1]. Furthermore, the high diffusivity of copper materials is a
major drawback which degrades IC performance. Graphene nanoribbon (GNR) can
be a good candidate to replace Cu for interconnects at the BEOL [2]. Their 2D
structure, high electrical and thermal conductivity, and low noise also make GNRs a
possible alternative to copper for integrated circuit interconnects. Research is
exploring the creation of quantum dots by changing the width of GNRs at select points
along the ribbon, creating quantum confinement [3]. GRNs possess semiconductive
properties and may be a technological alternative to silicon semiconductors [4].
GNRFETs has capable of sustaining microprocessor clock speeds in the vicinity of
1 THz field-effect transistors dimension less than 10 nm wide with an Ion/Ioff
ratio >106 at room temperature. Naeemi et al. calculated conductance of GNR
interconnects as a function of chirality, width, Fermi level, and the type of electron
scatterings at the edges [1]. Chen et al. investigated GNR electrical properties as a
function of ribbon width. The electrical current noise of GNR devices at low fre-
quency is dominated by 1/f noise [5]. Hass et al. show multilayer graphene grown on
carbon-terminated SiC(0001) surface which holds rotational stacking faults linked to
the epitaxial state of the graphene–SiC interface, and such faults yield an electronic
structure vague from an isolated graphene sheet in the zone of the Dirac point [6].
Ghosh et al. reported on investigation of the thermal conductivity of graphene sus-
pended across trenches in Si/SiO2 wafer. The amount of power dissipated in graphene
and corresponding temperature rise were determined from the spectral position and
integrated intensity of graphene’s G mode [7]. There has been no discussion on the
bonding, effect of high temperature on the current, thermal coefficient, energy gap for
the multi-GNR interconnects. In this paper, we modelled multi-graphene nanoribbon
matrix and what is the impact of bonding on angle versus distribution, effect of
temperature on I–V, dI/dV, energy temperature coefficient.
Fig. 1 Schematic of
multilayer GNR as
interconnects
2V DX E
gð r Þ ¼ 2
@ r rij ð1Þ
N i\j
where N is the number of atoms, V is the volume, r_ij is the position vector of atom
j with respect to the ith atom.
The conductance of GNR is derived using linear response of Landauer formula
[10, 11]. The conductance of single GNR is given by
Z
2 @f0
Gi ¼ 2qh Ti ðE Þ dE ð2Þ
@E
where
1
ðE EF Þ
f 0 ðE Þ ¼ 1 þ exp
kB T
where f0(E) is the Fermi–Dirac distribution function and Tn(E) is the transmission
coefficient. Value of E0 = 0 and |Ei| = (|i| + 1/2) hvf/2r. vf = 106 m/s Fermi
velocity; r is width of GNR.
The total conductance of single GNR sheet is expressed as
X X
Gtot ¼ i
Gi ðe Þ þ i
Gi ðholesÞ ð3Þ
2 1 3
Z Z0
2 4
Gtot Gi ðe Þ þ Gi ðholesÞdE5
i ð4Þ
DEi
0 1
4 A. Agarwal et al.
Figure 2 shows an angle versus bonding distribution plot for multi-GNR with
different bonding. From this figure, we analyze that for depending upon different
bonding and different angle there is change in the distribution pattern. For H–H–H
at an angle of 120, the distribution value is approximately 0.65 which is quite high
as compared with other angles. Similarly, for C–H–H the distribution value is
approximately 0.65 for angle of 97 and 0.3 for an angle of 175, which shows a
deviation of about 50% value in distribution. The bond angle of H–H–H, H–C–H,
H–C–C, C–H–H and C–C–C are of 37, 97, 175 and 120 respectively with same
bond distribution value of 0.65.
Figure 3 shows the I–V characteristics of multi-GNR with varying temperature.
From this figure, we analyze that with the increase of applied voltage from −1.0 to
1.0 V the current starts increasing linearly from approximately −30,000 to
30,000 nA. Also with the increase of temperature from 4 to 3000 K, there is
deviation of about 5% value of the current. At applied voltage of 0 V, there is no
much change in current due to change of temperature from 4 to 2600 K, but there is
slight deviation in current when the temperature is around 3000 K.
Figure 4 shows a dI/dV–V plot with varying temperature. From the figure, we
analyze that there is a aperiodic change in dI/dV with change in applied voltage.
With the change of applied voltage, there is change in dI/dV from a minimum value
of −38,000 nA/V to a maximum value of 58,000 nA/V. When the applied voltage
is −1.0, the dI/dV value is approximately 10,000 nA/V, as the voltage is increased
dI/dV also starts increasing from 10,000 to 40,000 nA/V till −0.75 applied voltages.
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160 180
Angle
Modelling of Thermoelectric and Conduction Mechanism … 5
I (nA)
0 1800 oK
2200 oK
-10000 2600 oK
3000 oK
-20000
-30000
-40000
-1.0 -0.5 0.0 0.5 1.0
Voltage (V)
20000 4 oC
200 oC
0 600 oC
1000 oC
1400 oC
-20000 1800 oC
2200 oC
-40000 2600 oC
3000 oC
-1.0 -0.5 0.0 0.5 1.0
Voltage (V)
Further with the increase of voltage, the dI/dV starts decreasing from 40,000 nA/
V to approximately 22,000 nA/V till −0.5 V applied voltage. This phenomenon of
increasing and decreasing of dI/dV value continues till 1.0 V of applied voltage.
Also with the change of temperature from 4 to 3000 K, there is deviation in the dI/
dV value. At applied voltage of 0 V, the value for dI/dV at low temperature of 4 K
is approximately 30,000 nA/V and at high temperature of 1800 K the dI/dV value
is approximately −30,000 nA/V. There is quite a high deviation with the change in
temperature at 0 V applied voltage. But at other values of applied voltages, the
deviation of dI/dV is around 10–20% only.
Figure 5 shows a plot between thermal coefficient and energy with varying
temperature. From the figure, we analyze that the value of thermal coefficient is
high, i.e., 2.5 10−4, for a low temperature of 50 K as compared to high tem-
perature of 3400 K with thermal coefficient value of 0.4 10−4. For a temperature
of 50 K, the thermal coefficient at 0 eV is approximately 2.5 10−4.
As energy is further increased, the thermal coefficient starts decreasing from
2.5 10−4 to 0 till 0.2 eV energy. Again, with the increase of energy the thermal
coefficient starts increasing to a value of 1.0 10−4. This phenomenon is
6 A. Agarwal et al.
-4
temperature 100
Thermal Coefficent x 10
300
2.0 500
1500
2000
1.5 2500
3000
3400
1.0
0.5
0 1 2 3
Energy (eV)
continued till 2 eV energy. With further increase of energy, the thermal coefficient
starts decreasing and finally at 3 eV the thermal coefficient approaches to zero. In
case of 3400 K temperature, there is a constant value of thermal coefficient till 2 eV
energy and with the further increase of energy the thermal coefficient approaches to
zero.
4 Conclusion
References
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