Tunnel Diode
Tunnel Diode
It was introduced by Leo Esaki in 1958. Heavily-doped p-n junction Width of the depletion layer is very small (about 100 A). It is generally made up of Ge and GaAs It shows tunneling phenomenon
VI Characteristics of Tunnel Diode
AT ZERO BIAS (A)
AT SMALL FORWARD VOLTAGE (10 mV)
AT MAXIMUM TUNNELING CURENT (B)
(50 mV)
AT DECREASING CURRENT REGION
(B to C)
AT HIGHER FORWARD VOLTAGE (At C- No tunnel current)
AT REVERSE BIAS VOLTAGE (R)
CHARACTERISTIC OF TUNNEL DIODE
Ip:- Peak Current
Iv :- Valley Current
Vp:- Peak Voltage Vv:- Valley Voltage
Equivalent Circuit Of Tunnel Diode When Biased In Negative Resistance Region
Cj- junction diffusion capacitance Rn - Negative resistance of the device in the NRR Ls - Series Inductance Rs - Series Resistance - At higher frequencies the series Rs and Ls can be ignored
Application of Tunnel Diode
Used as an ultra high speed switch Used as logic memory storage device Used as an Amplifier Used as Microwave oscillator Tunnel diode oscillator applied as sensormodulator for telemetry of temperature in human beings and animals
Reference
Electronic Devices & Circuits by S Salivahanan