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Indus Lecture 2 Partial
Indus Lecture 2 Partial
Indus Lecture 2 Partial
What are…
THYRISTORS?
Thyristor
- “Thyratron and
transistor”
- A four layer pnpn
device used as an
electronic switches
- Controls large amount
of power using a very
small input power
- Solid state device
THYRISTORS
Thyristors
!
Equivalent Circuit
Four Layer Devices
SCR
Gate terminal for a 2N3668
controlling input signal; GATE
determines when the
rectifier switches from
CATHODE
the open-circuit to
short-circuit state.
Silicon Controlled Rectifier (SCR)
• The graphic symbol for the SCR is shown with
the corresponding connections to the four-
layer semiconductor structure.
Silicon Controlled Rectifier (SCR)
• It is widely used as a switching device in power
control applications. It can control loads by
switching current OFF and ON up to many
thousand times a second.
• When the proper signal is applied to the gate
electrode, the device switches rapidly to a
conducting state and allows current flow in the
forward direction, just as in the conventional
rectifier.
• In the conduction region, the dynamic resistance
of the SCR is typically 0.01 to 0.1 Ohms.
• The reverse resistance is typically 100 kilo Ohms or
more.
Silicon Controlled Rectifier (SCR)
SCR Operation
• In Fig. 64.11 (a), current flow is blocked due to reverse-biased junction 𝐽2 .
However, when anode voltage is increased, a certain critical value called forward
breakover voltage 𝑉𝐵𝑂 is reached when 𝐽2 breaks down and SCR switches
suddenly to a highly conducting state. Under this condition, SCR offers very little
forward resistance (0.01 Ω – 1.0 Ω) so that voltage across it drops to a low value
(about 1 V) as shown in Fig. 64.12 and current is limited only by the power supply
and the load resistance. Current keeps flowing indefinitely until the circuit is
opened briefly
SCR Operation
• With supply connection as in Fig. 64.11 (b), the current through
the SCR is blocked by the two reverse biased junctions J1 and J3.
When V is increased, a stage comes when Zener breakdown
occurs which may destroy the SCR (Fig. 64.12). Hence, it is seen
that SCR is a unidirectional device unlike triac which is bi-
directional.
SCR Two Transistor Analogy
• The basic operation of a SCR
can be described by using two
transistor analogy. For this
purpose, SCR is split into two
3-layer transistor structures as
shown .
• When two transistors are fully
turned ON, voltage across the
two transistors falls to a very
low value. Typical turn-ON
times for an SCR are 0.1 to 1.0 2 IG
IA
µs. 1 (1 2 )
SCR Firing and Triggering
• We have discussed above the most common method of SCR
triggering i.e. gate triggering. However, other available
triggering methods are as under :
– 1. Thermal Triggering - In this case, the temperature of the
forward-biased junction is increased till the reverse-biased
junction breaks down.
– 2. Radiation Triggering - Here, triggering is achieved with the help
of charge carriers which are produced by the bombardment of the
SCR with external high-energy particles like neutrons or protons.
– 3. Voltage Triggering - In this case, the voltage applied across the
anode and cathode of the SCR is increased which decreases the
width of the depletion layer at the reverse-biased junction leading
to its collapse.
– 4. dv/dt Triggering - In this case, dv / dt is made more than the
value of the critical rate of rise of the voltage
SCR Firing and Triggering
• SCR Firing
The application of GATE voltage is known as firing.
• Generally there are two types of firing:
1. Zero Voltage Cross Over firing - operates by turning the SCR’s on
or sending gate signal only when the instantaneous value of the
sinusoidal voltage through it is zero.
For example if the total cycle time is set to 2 seconds and a 50%
power output from the thyristor controller is required then the
output will be fully on for 1 second and fully off for 1 second, this
is shown in the diagram below:
SCR Firing and Triggering
2. Phase angle control method - the phase angle is varied, i.e. the
application of gate pulses is delayed by certain time and the
conduction is controlled.
Varying this switch-on point between the initial and final zero
voltage points of the sine wave provides a variation from
100% down to 0% of the load voltage (and hence the output
power). For example if a 50% power output from the
thyristor controller is required then the waveform would be:
SCR Firing and Triggering
• Conduction angle – is the number of degrees of an ac
cycle during which the SCR is turned ON.
• Firing delay angle – is the number of degrees of an ac
cycle that elapses before the SCR is turned on.
Silicon Controlled Rectifier (SCR)
• Example:
Which condition would cause the larger load
current, a firing delay angle of 30 degrees or a
firing delay angle of 45 degrees.
Solution:
The firing delay angle of 30 degrees, because the
SCR would then spend a greater portion of the
cycle time in the ON state. The more time spent in
the ON state, the greater the average load current.
SCR Firing and Triggering
• Example:
1. If the UJT has a standoff ratio = 0.55 and an
externally applied VBB=20V, what is the peak
voltage?
2. If the UJT has an RB1=6.2 kOhms and an
RB2=2.2 Kohms,
(a)What is the standoff ratio?
(b) How large is the peak voltage?
Unijunction Transistor (UJT)
• As seen from Fig. below, when a battery of 30 V is applied
across B2 & B1, there is a progressive fall of voltage over
RBB provided E is open.
Example:
Given the figure below, (a) determine RB1 and RB2 at IE=0 A.
(b) Calculate VP, the voltage necessary to turn on the UJT.
Unijunction Transistor (UJT)
• Seatwork
1. For a unijunction transistor with VBB = 20 V,
standoff ratio = 0.65, RB1=2 k (IE=0), and
VD=0.7 V, determine:
(a) RB2.
(b) RBB.
(c) VRB1
(d) VP.
Unijunction Transistor (UJT)
Seatwork
2. Given the relaxation oscillator below, (a)
determine RB1 and RB2 at IE=0 A. (b) Calculate
VP, the voltage necessary to turn on the UJT.
Unijunction Transistor (UJT)
Once conduction is established
at VE=VP, the emitter potential
VE will drop with increase in IE.
• This corresponds exactly with
the decreasing resistance RB1
for increasing current
IE(negative resistance region).
• The decrease in resistance in the
active region is due to the holes
injected into the n-type slab
from the aluminum p-type rod
when conduction is established.
Unijunction Transistor (UJT)
• Typical static emitter-characteristic curves for
a UJT
Unijunction Transistor (UJT)
• Three other important parameters for the
unijunction transistor are IP, VV, and IV.