UMT3904 / SST3904 / MMST3904 / 2N3904

Transistors

NPN General Purpose Transistor

UMT3904 / SST3904 / MMST3904 / 2N3904

!Features !External dimensions (Units : mm)

1) BVCEO > 40V (IC = 1mA) 2.0±0.2

2) Complements the UMT3906 / SST3906 / MMST3906 UMT3904 1.3±0.1

0.65 0.65 0.2
0.9±0.1
0.7±0.1
(1) (2)

/ 2N3906.

1.25±0.1

2.1±0.1
0~0.1
(1) Emitter
ROHM : UMT3 (3)

(2) Base

0.1~0.4
EIAJ : SC-70 0.3 +0.1
−0 0.15±0.05
All terminals have same dimensions (3) Collector

2.9±0.2
SST3904 0.95 +0.2

!Package, marking and packaging specifications 1.9±0.2

0.95 0.95
−0.1
0.45±0.1

(1) (2)
Part No. UMT3904 SST3904 MMST3904 2N3904

0.2
−0.1
0~0.1

2.4±0.2
1.3 +
0.2Min.
Packaging type UMT3 SST3 SMT3 TO-92 (3) (1) Emitter
Marking R1A R1A R1A - +0.1 (2) Base
0.15 −0.06
Code T106 T116 T146 T93 ROHM : SST3 0.4 +0.1
−0.05
All terminals have same dimensions
(3) Collector
Basic ordering unit
(pieces) 3000 3000 3000 3000
2.9±0.2
1.1 +0.2
MMST3904 1.9±0.2 −0.1
0.8±0.1
0.95 0.95

(1) (2)
0~0.1

0.2
−0.1

2.8±0.2
1.6 +
!Absolute maximum ratings (Ta = 25°C) ROHM : SMT3
(3) (1) Emitter

0.3~0.6
EIAJ : SC-59 0.4 +0.1
+0.1
0.15 −0.06 (2) Base
−0.05
Parameter Symbol Limits Unit All terminals have same dimensions
(3) Collector
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 40 V
4.8±0.2 3.7±0.2
Emitter-base voltage VEBO 6 V 2N3904
4.8±0.2

Collector current IC 0.2 A

2.5Min.

UMT3904,
(12.7Min.)

Collector SST3904, 0.2 W

power MMST3904
PC 0.5 +0.15
−0.05
dissipation SST3904, MMST3904 0.35 W
0.625 W
* ROHM : TO-92 (1) (2) (3) +0.3
(1) Emitter
2N3904 EIAJ : SC-43
2.5 −0.1 (2) Base
Junction temperature Tj 150 °C 5 0.45±0.1 2.3
(3) Collector
Storage temperature Tstg −55~+150 °C

* When mounted on a 7 x 5 x 0.6 mm ceramic board.

!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 - - V IC = 10µA
Collector-emitter breakdown voltage BVCEO 40 - - V IC = 1mA
Emitter-base breakdown voltage BVEBO 6 - - V IE = 10µA
Collector cutoff current ICES - - 50 nA VCB = 30V
Emitter cutoff current IEBO - - 50 nA VEB = 3V
- - 0.2 IC/IB = 10mA/1mA
Collector-emitter saturation voltage VCE(sat) V
- - 0.3 IC/IB = 50mA/5mA
0.65 - 0.85 IC/IB = 10mA/1mA
Base-emitter saturation voltage VBE(sat) V
- - 0.95 IC/IB = 50mA/5mA
40 - - VCE = 1V , IC = 0.1mA
70 - - VCE = 1V , IC = 1mA
DC current transfer ratio hFE 100 ~
- 300 - VCE = 1V , IC = 10mA
60 - - VCE = 1V , IC = 50mA
30 - - VCE = 1V , IC = 100mA
Transition frequency fT 300 - - MHz VCE = 20V , IE = −10mA, f = 100MHz
Collector output capacitance Cob - - 4 pF VCB = 10V , f = 100kHz
Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz
Delay time td - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
Rise time tr - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
Storage time tstg - - 200 ns VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA
Fall time tf - - 50 ns VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA
 UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors

!Electrical characteristic curves

10

COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)

40 Ta=25°C
Ta=25°C IC / IB=10
COLLECTOR CURRENT : IC (mA)

35
0.3
8
30

6 25
0.2
20
4 15

10 0.1
2
5.0
IB=0µA
0 0
0 10 20 0.1 1.0 10 100
COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter output Fig.2 Collector-emitter saturation
characteristics voltage vs. collector current

500
Ta=25°C
DC CURRENT GAIN : hFE

VCE=1V 5V 10V
3V
100

10

5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current ( Ι )

500
VCE=5V

Ta=125°C
DC CURRENT GAIN : hFE

Ta=25°C
100
Ta=−55°C

10

5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )
 UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors

BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)

500
Ta=25°C 1.8 Ta=25°C
VCE=5V IC / IB=10
f=1kHz 1.6
AC CURRENT GAIN : hFE

100 1.2

0.8

0.4
10

5 0
0.01 0.1 1.0 10 100 0.1 1.0 10 100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.5 AC current gain vs. collector current Fig.6 Base-emitter saturation

voltage vs. collector current

1.8 1000 1000

Ta=25°C Ta=25°C Ta=25°C
BASE EMITTER VOLTAGE : VBE(ON) (V)

VCE=5V IC / IB=10 IC / IB=10

1.6
TURN ON TIME : ton (ns)

RISE TIME : t r (ns)

1.2
VCC=40V
40V
100 15V 100
0.8
VCC=3V

0.4

0 10 10
0.1 1.0 10 100 1.0 10 100 1.0 10 100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
Fig.7 Grounded emitter propagation Fig.8 Turn-on time vs. collector Fig.9 Rise time vs. collector
characteristics current current

1000 1000 50
Ta=25°C Ta=25°C Ta=25°C
IC=10IB1=10IB2 VCC=40V f=1MHz
IC/IB=10
STORAGE TIME : ts (ns)

CAPACITANCE (pF)
FALL TIME : tf (ns)

10

40V Cib
100 100
Cob
15V

VCE=3V
1

10 10 0.5
1.0 10 100 1.0 10 100 0.1 1.0 10 100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) REVERSE BIAS VOLTAGE (V)

Fig.10 Storage time vs. collector Fig.11 Fall time vs. collector Fig.12 Input / output capacitance
current current vs. voltage
 UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors

100 1000 100

CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)

Ta=25°C Ta=25°C
COLLECTOR-EMITTER VOLTAGE : VCE (V)

h PARAMETER NORMALIZED TO 1mA

VCE=5V
VCE=5V f=270Hz
100MHz 200MHz 400MHz 500MHz
hoe
300 MHz
10 10

hie
100 hre

hfe
1.0 1
Ta=25°C
IC=1mA
300MHz hie=3.84kΩ
hfe=141 −5
200MHz hre=5.03 × 10
100MHz hoe=5.58µS
0.1 10 0.1
0.1 1.0 10 100 1.0 10 100 0.1 1 10 100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
Fig.13 Gain bandwidth product Fig.14 Gain bandwidth product Fig.15 h parameter vs. collector current
vs. collector current

10µ 100k 100k

VCB=25V Ta=25°C Ta=25°C
COLLECTOR CUTOFF CURRENT : ICBO (A)

VCE=5V VCE=5V
f=10kHz f=1kHz
SOURCE RESISTANCE : RS (Ω)

SOURCE RESISTANCE : RS (Ω)

12 B

12
1µ
dB

dB
8d
8d

5d
B
B
3d B
10k 10k
5d

3d

B
1.
B

0d
100n 1.
0d
B

10n NF
1k NF 1k =1
=1 .0
.0 3. dB
3. dB 0d
1n 0d B
B 5.
5.

0d
0d

B
8.

8.
B
0d

0d
B

0.1n 100 100

0 25 50 75 100 125 150 0.01 0.1 1 10 0.01 0.1 1 10
ANBIENT TEMPERATURE : Ta (°C) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.16 Noise characteristics ( Ι ) Fig.17 Noise characteristics ( ΙΙ ) Fig.18 Noise characteristics ( ΙΙΙ )

100k 12
Ta=25°C Ta=25°C
VCE=5V VCE=5V
f=10Hz
SOURCE RESISTANCE : RS (Ω)

10 IC=100µA
RS=10kΩ
NOISE FIGURE : NF (dB)
12

10k 8
dB
8d B
B
5d B
3d

NF 4
1k =3
.0
5. dB
0d
B 2
8.
0d
B

100 0
0.01 0.1 1 10 10 100 1k 10k 100k
COLLECTOR CURRENT : IC (mA) FREQUENCY : f (Hz)

Fig.19 Noise characteristics ( ΙV ) Fig.20 Noise vs. collector current