Transistor

2SC3904
Silicon NPN epitaxial planer type

For 2GHz band low-noise amplification

Unit: mm

+0.2
2.8 –0.3

■ Features
+0.25
0.65±0.15 1.5 –0.05 0.65±0.15

● High transition frequency fT.

Mini type package, allowing downsizing of the equipment and

1.45
●

0.95
1

2.9 –0.05

1.9±0.2
+0.2
automatic insertion through the tape packing and the magazine

0.95
packing. 3

0.4 –0.05
+0.1
2

0.16 –0.06
+0.1
+0.2
1.1 –0.1
■ Absolute Maximum Ratings

0.8
(Ta=25˚C)
0.1 to 0.3
Parameter Symbol Ratings Unit

0 to 0.1
0.4±0.2

Collector to base voltage VCBO 15 V

Collector to emitter voltage VCEO 10 V
Emitter to base voltage VEBO 2 V
1:Base JEDEC:TO–236
Collector current IC 65 mA 2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
Collector power dissipation PC 200 mW
Junction temperature Tj 150 ˚C Marking symbol : 3S
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA
Emitter cutoff current IEBO VEB = 1V, IC = 0 1 µA
Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 120 300
Transition frequency fT VCE = 8V, IC = 20mA, f = 0.8GHz 7.0 8.5 GHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 0.6 1 pF
Foward transfer gain | S21e |2 VCE = 8V, IC = 20mA, f = 1.5GHz 7 9 dB
Maximum unilateral power gain GUM VCE = 8V, IC = 20mA, f = 1.5GHz 10 dB
Noise figure NF VCE = 8V, IC = 7mA, f = 1.5GHz 2.2 3 dB

1
Transistor 2SC3904

PC — Ta IC — VCE IC — VBE
240 30 120
Ta=25˚C VCE=8V
Collector power dissipation PC (mW)

IB=250µA
200 25 100

Collector current IC (mA)

Collector current IC (mA)

25˚C
160 20 200µA 80

Ta=75˚C –25˚C
120 15 150µA 60

80 10 100µA 40

40 5 50µA 20

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IC
10 240 12
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=8V VCB=8V

f=1.5GHz
Forward current transfer ratio hFE

3 Ta=25˚C

Transition frequency fT (GHz)

200 10

1
Ta=75˚C
160 8
0.3 Ta=75˚C

25˚C
0.1 –25˚C 120 6
25˚C
0.03
80 4
–25˚C
0.01

40 2
0.003

0.001 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 1 3 10 30 100
Collector current IC (mA) Collector current IC (mA) Collector current IC (mA)

Cob — VCB GUM — IC NF — IC

1.2 12 6
Maximum unilateral power gain GUM (dB)

IE=0 VCE=8V VCE=8V

Collector output capacitance Cob (pF)

f=1MHz f=1.5GHz f=1.5GHz

Ta=25˚C Ta=25˚C Ta=25˚C
1.0 10 5
Noise figure NF (dB)

0.8 8 4

0.6 6 3

0.4 4 2

0.2 2 1

0 0 0
1 3 10 30 100 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA)