SMD Type Transistors

NPN Transistors
2SD1816

TO-252 Unit: mm

6.50-0.15
+0.15

+0.15
1.50 -0.15
2.30 -0.1
+0.1

Features 5.30-0.2
+0.2
0.50 -0.7
+0.8

Low Collector-to-Emitter Saturation Voltage

3 .8 0
Fast Switching Speed

+0.15
5.55 -0.15
High fT.

+0.2
9.70 -0.2
0.127

+0.15
0.50 -0.15
0.80-0.1
+0.1
max
Complementary to 2SB1216

+0.25
2.65 -0.1
+0.28
1.50 -0.1
2.3 0.60-+ 0.1
0.1 1 Base
4 .60 -0.15
+0.15
2 Collector
3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter Symbol Rating Unit
Collector - Base Voltage VCBO 120
Collector - Emitter Voltage VCEO 100 V
Emitter - Base Voltage VEBO 6
Collector Current - Continuous IC 4
A
Collector Current - Pulse ICP 8
Collector Power Dissipation PC 1 W
Junction Temperature TJ 150

Storage Temperature Range Tstg -40 to 150

Electrical Characteristics Ta = 25
Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 120
Collector- emitter breakdown voltage VCEO Ic= 1 mA RBE= 100 V
Emitter - base breakdown voltage VEBO IE= 100A IC= 0 6
Collector-base cut-off current ICBO VCB= 100 V , IE= 0 1
uA
Emitter cut-off current IEBO VEB= 5V , IC=0 1
Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=200mA 0.15 0.4
V
Base - emitter saturation voltage VBE(sat) IC=2 A, IB=200mA 0.9 1.2
hFE(1) VCE= 5V, IC= 500mA 70 400
DC current gain
hFE(2) VCE= 5V, IC= 3 A 40
Turn-on Time ton 100
Storage Time tstg See Test Circuit 900 ns
Fall Time tf 50
Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 40 pF
Transition frequency fT VCE= 10V, IC= 500 mA 180 MHz

Classification of hfe(1)
Type 2SD1816-Q 2SD1816-R 2SD1816-S 2SD1816-T
Range 70-140 100-200 140-280 200-400

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 SMD Type Transistors

NPN Transistors
2SD1816
TEST CIRCUIT

PW=20S
Duty Cycle1% I B1

INPUT RB OUTPUT

I B2
50 VR

+ +
100 470
-5V 50V

Ic=10, IB1= -10, IB2=2A

Unit (resistance:, capacitance: F)

Typical Characterisitics
Colletcor Current, Ic (A)

Colletcor Current, Ic (A)

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 Collector Current, IC (A) Collector to Emitter
Saturation Voltage, VCE(SAT) (mV)
SMD Type

a=
DC
(T Op

)
25 erat
ion
Typical Characterisitics

DC

25
Op
ra e
tio
n
(T
c=
25
)

Collector Dissipation, PD (W) Base to Emitter

Saturation Voltage, VBE(SAT) (V)
2SD1816
NPN Transistors
Transistors

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