SMD Type

SMD Type Transistors

NPN Transistors
KST8050D-50
SOT-23 Unit: mm
2.9 -0.1
+0.1

0.4 -0.1
+0.1

0.4
Features

+0.1
2.4 -0.1

+0.1
1.3 -0.1
● Collector Current Capability IC=1.2A
● Collector Emitter Voltage VCEO=50V

0.55
1 2

0.95 -0.1
+0.1
0.1 -0.01
+0.05

1.9 -0.1
+0.1

+0.1
0.97 -0.1
1.Base

2.Emitter

+0.1
0.38 -0.1
0-0.1
3.collector

Absolute Maximum Ratings Ta = 25

Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 1.2 A
Collector Dissipation PC 250 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 to 150

Electrical Characteristics Ta = 25
Parameter Symbol Testconditi ons Min Typ Max Unit
Collector-base breakdown voltage VCBO IC = 100 uA, I E =0 50 V
Collector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 50 V
Emitter-base Breakdown voltage VEBO IE = 100 u A, I C =0 6 V
Collector-base cut-off current ICBO VCB = 50 V , IE = 0 0.1 A
Collector-emitter cut-off current ICEO VCE = 40 V , IB = 0 1 A
Emitter-base cut-off current IEBO VEB = 6 V , IC = 0 0.1 A
VCE = 1 V , IC = 100 mA 100 320
DC current gain hFE
VCE = 1 V , IC = 800 mA 40
Collector-emitter saturation voltage VCE(sat) IC = 800 mA , IB = 80 mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC = 800 mA , IB = 80 mA 1.2 V
Transition frequency fT VCE = 10 V , IC = 50 mA , f = 30 MHz 100 MHz

■ Classification of hfe(1)
Range 100-200 160-320
Marking Y1C Y1D

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 SMD Type Transistors
SMD Type
NPN Transistors
KST8050D-50
Typical Characteristics
Static Characteristic hFE —— IC
140 1000
COMMON EMITTER
500uA COMMON
VCE=1V
120 EMITTER
450uA Ta=25℃ Ta=100℃
(mA)

400uA

hFE
100 300
IC

350uA Ta=25℃

DC CURRENT GAIN
COLLECTOR CURRENT

80
300uA
100
250uA
60
200uA

40 150uA
30
100uA
20
IB=50uA

0 10
0.0 0.5 1.0 1.5 2.0 2.5 1 3 10 30 100 300 1000 1500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
1000 1.2

300
COLLECTOR-EMITTER SATURATION

1.0
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)

Ta=100℃
VOLTAGE VCEsat (mV)

100
0.8 Ta=25℃

30 Ta=25℃
Ta=100℃
0.6
10

0.4
3

β=10 β=10
1 0.2
1 3 10 30 100 300 1000 1500 1 3 10 30 100 300 1000 1500
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

VBE —— IC Cob/ Cib —— VCB/ VEB

1500 200
1000 f=1MHz
100
IE=0/IC=0
Cib Ta=25℃
300
(pF)
(mA)

Ta=100℃
100 30
C
IC

Cob
CAPACITANCE
COLLCETOR CURRENT

30
10

Ta=25℃
10

3
3
COMMON EMITTER
VCE=1V
1 1
0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20
BASE-EMMITER VOLTAGE VBE (V) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1000 350

300
(MHz)

COLLECTOR POWER DISSIPATION

300

250
fT

100
PC (mW)
TRANSITION FREQUENCY

200

30
150

10
100

3 50
VCE=10V
Ta=25℃
1 0
1 3 10 30 100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃)

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