2SB1188 / 2SB1182 / 2SB1240

Transistors

Medium power transistor (−32V, −2A)

2SB1188 / 2SB1182 / 2SB1240

zFeatures zExternal dimensions (Unit : mm)

1) Low VCE(sat). 2SB1188 2SB1182
VCE(sat) = −0.5V (Typ.)
2.3+0.2
(IC/IB = −2A / −0.2A) 4.5+0.2 6.5±0.2 −0.1

1.5±0.3
0.5±0.1
−0.1 C0.5
+0.2
1.5 −0.1 5.1+0.2
−0.1 0.5±0.1
1.6±0.1
2) Complements the 2SD1766 / 2SD1758 /

−0.1
5.5+0.3

9.5±0.5
2SD1862.

2.5+0.2
−0.1
4.0±0.3

0.9

1.5

2.5
0.75 0.65±0.1
(1) (2) (3)
0.4+0.1
−0.05 0.9
1.0±0.2
0.5±0.1
0.55±0.1
0.4±0.1 0.4±0.1
1.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2
1.5±0.1
3.0±0.2

zStructure (1) (2) (3)

(1) Base (1) Base
Epitaxial planar type ROHM : MPT3 (2) Collector ROHM : CPT3 (2) Collector
EIAJ : SC-62 (3) Emitter EIAJ : SC-63 (3) Emitter
PNP silicon transistor
Abbreviated symbol: BC ∗
2SB1240
6.8±0.2 2.5±0.2
4.4±0.2
0.9
1.0

0.65Max.
14.5±0.5

0.5±0.1

(1) (2) (3)

2.54 2.54
1.05 0.45±0.1

(1) Emitter
ROHM : ATV (2) Collector
(3) Base

∗ Denotes h FE

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −40 V
Collector-emitter voltage VCEO −32 V
Emitter-base voltage VEBO −5 V
−2 A(DC)
Collector current IC
−3 A (Pulse)∗1
0.5 W
2SB1188
Collector power
PC
2 W ∗2
dissipation 2SB1182 10 W (Tc=25°C)
2SB1240 1 W ∗3
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to 150 °C
∗1 Single pulse, Pw=100ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

Rev.A 1/3
 2SB1188 / 2SB1182 / 2SB1240
Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −40 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −32 − − V IC= −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA
Collector cutoff current ICBO − − −1 µA VCB= −20V
Emitter cutoff current IEBO − − −1 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − −0.5 −0.8 V IC/IB= −2A/ −0.2A ∗
DC current transfer ratio hFE 82 − 390 − VCE= −3V, IC= −0.5A ∗
Transition frequency fT − 100 − MHz VCE= −5V, IE=0.5A, f=100MHz
Output capacitance Cob − 50 − pF VCB= −10V, IE=0A, f=1MHz
∗ Measured using pulse current.

zPackaging specifications and hFE

Package Taping
Code T100 TL TV2
Type hFE Basic ordering unit (pieces) 1000 2500 2500
2SB1188 PQR − −
2SB1182 PQR − −
2SB1240 PQR − −

hFE values are classified as follows :

Item P Q R
hFE 82 to 180 120 to 270 180 to 390

zElectrical characteristic curves

−0.5
VCE= −3V Ta=25°C
Ta=25°C −2.5mA −2.25mA
500
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (mA)

−1000 Ta=100°C VCE= −6V

25°C −0.4 −2mA
−500 −3V
DC CURRENT GAIN : hFE

−40°C
−1.75mA −1V
−200 200
−1.5mA
−100 −0.3
−1.25mA
−50 100
−1mA
−20 −0.2
−750µA
−10 50
−500µA
−5 −0.1
−250µA
−2
−1 0 IB=0A
20
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 0 −0.4 −0.8 −1.2 −1.6 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs.
characteristics characteristics collector curren ( )

Rev.A 2/3
 2SB1188 / 2SB1182 / 2SB1240
Transistors

COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
500 VCE= −3V −500 Ta=25°C −500 lC/lB=10
Ta=100°C
25°C
DC CURRENT GAIN : hFE

−25°C
200 −200 −200

−100
100 −100 Ta=100°C
IC/IB=50 25°C
−40°C
−50
50 −50 20

10 −20

20
−5 −10 −20 −50 −100 −200 −500 −1000 −2000 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. Fig.5 Collector-emitter saturation Fig.6 Collector-emitter saturation
collector current ( ) voltage vs. collector current ( ) voltage vs. collector current ( )

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

BASE SATURATION VOLTAGE : VBE(sat)(V)

Ta=25°C

: Cib (pF)
Ta=25°C 500 Ta=25°C
TRANSITION FREQUENCY : fT (MHz)

VCE= −5V 300

Cib f=1MHz
200 IE=0A
−1
IC=0A
IC /IB=10 100
200

EMITTER INPUT CAPACITANCE

−0.5
Cob
50
100

−0.2 20
50
10
−0.1

−0.05
−5 −10 −20 −50 −100 −200 −500 −1000 −2000 5 10 20 50 100 200 500 1000 2000
−0.5 −1 −2 −5 −10 −20 −30
COLLETOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Base-emitter saturation voltage Fig.8 Gain bandwidth product vs.
Fig.9 Collector output capacitance vs.
vs. collector current emitter current
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

−5 −5
IC Max. (pulse) IC Max. (Pulse) PW=500µs

−2 −2
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)

Pw

Pw

DC
=1

=1 ∗

−1 −1
0 0m

0m
s

s∗

−0.5 −0.5
PW=1ms
D PW=100ms
C −0.2
−0.2

−0.1 −0.1

−0.05 −0.05
Ta=25°C Ta=25°C
∗Single ∗Single
−0.02 nonrepetitive −0.02 nonrepetitive
−0.01 pulse −0.01 pulse
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50

COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operation area Fig.11 Safe operation area

(2SB1188) (2SB1182)

Rev.A 3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1