RB088B150

Data Sheet

Schottky Barrier Diode

RB088B150

lApplications lExternal Dimensions(Unit : mm) lLand Size Figure(Unit : mm)

Switching power supply
2.3±0.2 6.0
6.5±0.2 0.1

0.5±0.1
C0.5 5.1±0.2

6.0
0.1
5.5±0. 1.5±0.3
lFeatures
1)Cathode common dual type
1.6 1.6

3.0 2.0
2)Low IR

9.5±0.5
3

1
3)High reliability

0.8 min
4)AEC-Q101 qualified

2.5
0.75
0.9
(1) (2) (3)
0.65±0.1
0.5±0.1
CPD 2.3 2.3
lConstruction
2.3±0.2 2.3±0.2 1.0±0.2
Silicon epitaxial lStructure
ROHM : CPD
JEITA : SC-63
1 Manufacture

lTaping Dimensions(Unit : mm)

2.0±0.05
4.0±0.1 8.0±0.1 φ 1.55±0.1
　　　　　 0 0.4±0.1

2.5±0.1
7.5±0.05

16.0±0.2
TL

10.1±0.1
10.1±0.1

13.5±0.2
0～0.5

φ 3.0±0.1
6.8±0.1 8.0±0.1
2.7±0.2

lAbsolute Maximum Ratings(Ta=25°C)

Parameter Symbol Limits Unit

Reverse voltage (repetitive) VRM 150 V
Reverse voltage (DC) VR 150 V
Average rectified forward current (*1) Io 10 A
Forward current surge peak (60Hz・1cyc)(*2) IFSM 50 A
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
(*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave
(*2) Per Diode.

lElectrical Characteristics(Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF - 0.78 0.88 V IF=5.0A

Reverse current IR - - 15 mA VR=150V

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© 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.08 - Rev.A
RB088B150 　 Data Sheet

10 10000
Ta = 150°C
1000

100

REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)

Ta = 150°C
1 Ta = 125°C
10
Ta = 125°C
1
Ta = 75°C Ta = 75°C

0.1
0.1
Ta = 25°C 0.01 Ta = 25°C

0.001
Ta = -25°C
Ta = -25°C
0.01 0.0001
100 200 300 400 500 600 700 800 900 0 50 100 150

FORWARD VOLTAGE:VF(mV) REVERSE VOLTAGE:VR(V)

VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS

1000 790
f = 1MHz
Ta=25°C
785 VF=5A
n=30pcs
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN

780
TERMINALS:Ct(pF)

100 775 AVE : 767.3mV

770

765

10 760
0 5 10 15 20 25 30

REVERSE VOLTAGE:VR(V)
VF DISPERSION MAP
VR-Ct CHARACTERISTICS

375 460

AVE : 327.3nA Ta=25°C Ta=25°C

VR=150V 455 f=1MHz
350 n=30pcs VR=0V
n=10pcs
REVERSE CURRENT:IR(nA)

CAPACITANCE BETWEEN
TERMINALS:Ct(pF)

450
325
AVE : 439.5pF
445

300
440

275
435

250 430

IR DISPERSION MAP Ct DISPERSION MAP

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© 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.08 - Rev.A
RB088B150 　 Data Sheet

250 30

Ta=25°C
225 IFSM 25 IF=0.5A

RESERVE RECOVERY TIME:trr(ns)

8.3ms IR=1A
FORWARD CURRENT:IFSM(A)

Irr=0.25*IR
1cyc. n=10pcs
200 20
PEAK SURGE

AVE : 153.5A AVE : 10.7ns

175 15

150 10

125 5

100 0

IFSM DISRESION MAP trr DISPERSION MAP

1000 1000

IFSM
8.3ms 8.3ms IFSM
time
FORWARD CURRENT:IFSM(A)

FORWARD CURRENT:IFSM(A)

1cyc.
PEAK SURGE

PEAK SURGE

100 100

10 10
1 10 100 1 10 100

NUMBER OF CYCLES TIME:t(ms)

IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS

100 6
THAERMAL IMPEDANCE:Rth (°C/W)

Rth(j-a) 5
FORWARD POWER
DISSIPATION:Pf(W)

10 4 D = 1/2
TRANSIENT

Rth(j-c)
3
Sin(θ＝180)
Mounted on epoxy board

1 IM=10mA IF=5A 2 DC

time 1

1ms 300ms
0.1 0
0.001 0.01 0.1 1 10 100 1000 0 1 2 3 4 5 6 7 8

TIME:t(s) AVERAGE RECTIFIED

FORWARD CURRENT:Io(A)
Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS

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© 2012 ROHM Co., Ltd. All rights reserved. 3/4 2012.08 - Rev.A
RB088B150 　 Data Sheet

0.25 10

0A Io
DC
0.2 8 0V VR
t

FORWARD CURRENT:Io(A)
D=t/T

AVERAGE RECTIFIED
DISSIPATION:PR (W)
REVERSE POWER

D = 1/2 VR=75V
T
0.15 6 Tj=150°C

0.1 DC 4 Sin(θ = 180)

D = 1/2

0.05 Sin(θ = 180) 2

0 0
0 50 100 150 0 25 50 75 100 125 150

REVERSE VOLTAGE:VR(V) AMBIENT TEMPERATURE:Ta(°C)

VR-PR CHARACTERISTICS DERATING CURVE(Io-Ta)

15 3
0A Io
AVE : 2.21kV
0V VR
t 2.5
D=t/T
FORWARD CURRENT:Io(A)

DISCHARGE TEST ESD(KV)

VR=75V
T
AVERAGE RECTIFIED

10 Tj=150°C 2
DC
ELECTROSTATIC

1.5
D = 1/2

5 1
AVE : 0.47kV
Sin(θ = 180)
0.5

C=200pF C=100pF
0 0
R=0Ω R=1.5kΩ
0 25 50 75 100 125 150

CASE TEMPARATURE:Tc(°C)
ESD DISPERSION MAP
DERATING CURVE(Io-Tc)

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© 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.08 - Rev.A
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R1120A