Transistor

2SC4787
Silicon NPN epitaxial planer type

For intermediate frequency amplification

Unit: mm

6.9±0.1 1.05 2.5±0.1

±0.05 (1.45)
0.7 4.0

0.15
0.8

■ Features

3.5±0.1
0.8
● High transition frequency fT.
● Satisfactory linearity of forward current transfer ratio hFE.

1.0
0.65 max.
● Allowing supply with the radial taping.

14.5±0.5
0.85
+0.1
0.45–0.05

2.5±0.5 2.5±0.5

■ Absolute Maximum Ratings

0.45–0.05
(Ta=25˚C)

+0.1
1 2 3

2.5±0.1
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 45 V
Collector to emitter voltage VCEO 35 V
Note: In addition to the 1:Emitter
Emitter to base voltage VEBO 4 V lead type shown in 2:Collector
the upper figure, the 3:Base
Collector current IC 50 mA
type as shown in MT1 Type Package
Collector power dissipation PC 600 mW the lower figure is
also available.
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C

1.2±0.1
0.65
max.

0.45+–0.1
0.05
(HW type)

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 µA
Collector to base voltage VCBO IC = 100µA, IE = 0 45 V
Collector to emitter voltage VCEO IC = 1mA, IB = 0 35 V
Emitter to base voltage VEBO IE = 100µA, IC = 0 4 V
Forward current transfer ratio hFE VCE = 10V, IC = 10mA 20 50 100
Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 2mA 0.5 V
Common emitter reverse transfer capacitance Cre VCB = 10V, IE = –1mA, f = 10.7MHz 1.5 pF
Power gain PG VCB = 10V, IE = –10mA, f = 58MHz 18 dB
Transition frequency fT VCB = 10V, IE = –10mA, f = 100MHz 300 500 MHz

1
Transistor 2SC4787

PC — Ta IC — VCE IC — VBE
800 80 60
25˚C VCE=10V
Collector power dissipation PC (mW)

700 70
IB=2.0mA 50
1.8mA Ta=75˚C –25˚C

Collector current IC (mA)

Collector current IC (mA)

600 60
1.6mA
40
500 50 1.4mA

1.2mA
400 40 30
1.0mA
300 30
0.8mA 20
0.6mA
200 20
0.4mA
10
100 10
0.2mA

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — I E
100 120 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=10V VCB=10V

Ta=25˚C
Forward current transfer ratio hFE

30

Transition frequency fT (MHz)

100 500

10

80 400
3
Ta=75˚C
1 60 300
25˚C

0.3 Ta=75˚C –25˚C

25˚C 40 200

0.1
–25˚C
20 100
0.03

0.01 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob — VCB Cre — VCE PG — IE

3.0 2.4 30
Common emitter reverse transfer capacitance Cre (pF)

IE=0 IC=1mA VCB=10V

Collector output capacitance Cob (pF)

f=1MHz f=10.7MHz f=58MHz

Ta=25˚C Ta=25˚C Ta=25˚C
2.5 2.0 25
Power gain PG (dB)

2.0 1.6 20

1.5 1.2 15

1.0 0.8 10

0.5 0.4 5

0 0 0
1 3 10 30 100 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA)