Medium Power Transistor (32V,1A)

2SB1132 / 2SA1515S / 2SB1237

Features Dimensions (Unit : mm)

1) Low VCE(sat).

or
VCE(sat) = 0.2V(Typ.) 2SB1132 2SA1515S
4+
− 0.2 2+
− 0.2
4.5 +0.2
(IC / IB = 500mA / 50mA)

− 0.1
−0.1
1.5 +0.2

0.5 +

− 0.2
1.6 +
− 0.1 −0.1
2) Compliments 2SD1664 /

3+

3Min.
2SD1858

f
− 0.3
2.5 +0.2
−0.1
4.0 +

(15Min.)
(1) (2) (3) 0.45 +0.15
−0.05
Structure 0.4 +0.1

ns d
−0.05

− 0.2
0.4 +
− 0.1 0.5 +
− 0.1 0.4 0.1
Epitaxial planar type

1.0 +
1.5 +
− 0.1 1.5 +
− 0.1
PNP silicon transistor 3.0 +
− 0.2 2.5 +0.4
−0.1 0.45 +0.15
−0.05

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0.5
5

(1) (2) (3)

(1) Base (1) Emitter
ROHM : MPT3 (2) Collector ROHM : SPT (2) Collector
EIAJ : SC-62 (3) Emitter EIAJ : SC-72 (3) Base
es en Abbreviated symbol: BA ∗
2SB1237
6.8 + 2.5 +
− 0.2
− 0.2
m
− 0.2
4.4 +
0.9
1.0

0.65Max.
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− 0.5
14.5 +

0.5 +
− 0.1

(1) (2) (3)

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2.54 2.54
D

1.05 0.45 +
− 0.1

(1) Emitter
ROHM : ATV (2) Collector
(3) Base

∗ Denotes h
e

FE
R
ot
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2SB1132 / 2SA1515S / 2SB1237 Data Sheet

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −40 V
Collector-emitter voltage VCEO −32 V
Emitter-base voltage VEBO −5 V
−1 A(DC)
Collector current IC
−2 A(Pulse) ∗1
0.5
2SB1132
2 ∗2

or
Collector power PC W
dissipation 2SA1515S 0.3
2SB1237 1 ∗3
Junction temperature Tj 150 C

f
Storage temperature Tstg −55 to +150 C
∗1 Single pulse, Pw=100ms

ns d
∗2 When mounted on a 40 40 0.7 mm ceramic board.
+
+

∗3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.

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Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions

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Collector-base breakdown voltage BVCBO −40 − − V IC= −50μA
Collector-emitter breakdown voltage BVCEO −32 − − V IC= −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA
Collector cutoff current ICBO − − −0.5 μA VCB= −20V
m
Emitter cutoff current IEBO − − −0.5 μA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − −0.2 −0.5 V IC/IB= −500mA/−50mA ∗
DC current 2SB1132, 2SB1237 120 − 390 − ∗
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hFE VCE= −3V, IC= −0.1A

transfer ratio 2SA1515S 120 − 390 −
Transition frequency fT − 150 − MHz VCE= −5V, IE=50mA, f=30MHz
− VCB= −10V, IE=0A, f=1MHz
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Output capacitance Cob 20 30 pF

D

∗ Measured using pulse current.

Packaging specifications and hFE

e

Package Taping
Code T100 TP TU2
R

Type hFE Basic ordering unit (pieces) 1000 5000 2500

2SB1132 QR − −
2SA1515S QR − −
ot

2SB1237 QR − −

hFE values are classified as follows :

N

Item Q R
hFE 120 to 270 180 to 390

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 2SB1132 / 2SA1515S / 2SB1237 Data Sheet

Electrical characteristics curves

-500 −500
VCE= −6V −3.0 Ta=25 C Ta=25 C
−3.5 −2.5

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

-200 −4.0
−2.0 1000
−400 −4.5

DC CURRENT GAIN : hFE

-100 Ta=100 C −5.0
25 C
-50 −55 C −1.5 500
−300
VCE= −3V
-20 −1V
−1.0 200
−200
-10

-5 −0.5 100
−100

or
-2
50
0 IB=0mA
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 −0.4 −0.8 −1.2 −1.6 −2.0 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

f
Fig.1 Grounded emitter Fig.2 Grounded emitter output Fig.3 DC current gain vs.
propagation characteristics characteristics collector current(Ι)

ns d
−1 −1.0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

COLLECTOR SATURATION VOLTAGE : VCE(sat )(V)

VCE= −3V Ta=25 C Ta=25 C

IC/IB=10

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1000 −0.5
−0.8
DC CURRENT GAIN : hFE

500 −0.2
−0.6
Ta=100 C
−0.1
lC= −500mA
200

100
25 C

−55 C
es en −0.05

−0.02
−0.4

−0.2
lC= −300mA
50
−0.01 0
m
−1 −2 −5 −10 −20 −50 −100 −200 −500−1000 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) BASE CURRENT : IB (mA)

Fig.4 DC current gain vs. Fig.5 Collector-emitter saturation Fig.6 Collector-emitter saturation
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collector current(ΙΙ) voltage vs. collector current voltage vs. base current

100 −5
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25 C Ta=25 C
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TRANSITION FREQUENCY : fT (MHz)

VCE= −5V f=1MHz

D

IE=0A −2
COLLECTOR CURRENT : IC (A)

200

Pw

P w ms
−1

=1

=1 ∗
50

00

0m
−0.5

s
∗
100
D
−0.2
e

−0.1
50 20
−0.05
R

−0.02 Ta=25 C
∗Single pulse
20 10 −0.01
−1 −2 −5 −10 −20 −50 −100 −0.5 −1 −2 −5 −10 −20 0 −0.2 −0.5 −1 −2 −5 −10 −20 −50
EMITTER CURRENT : IE (mA)
ot

COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.7 Gain bandwidth product Fig.8 Collector output capacitance Fig.9 Safe operation area
vs. emitter current vs.collector-base voltage (2SB1132)
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 2SB1132 / 2SA1515S / 2SB1237 Data Sheet

−5
TRANSIENT THERMAL RESISTANCE : Rth ( C/W)

1000 200
Ta=25 C Ta=25 C Ta=25 C
∗Single pulse
IC Max.∗
−2

COLLECTOR CURRENT : IC (A)

100
100

RESISTANCE : Rth ( C/W)

−1

TRANSIENT THERMAL
50
−0.5 PW =10ms∗
∗
PW =100ms
10 −0.2 20
DC
−0.1 10
1 −0.05
5
−0.02

or
0.1 −0.01 2
0.001 0.01 0.1 1 10 100 1000 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 0.01 0.1 1 10 100 1000

TIME : t (s) COLLECTOR TO EMITTER VOLTAGE : VCE (V) TIME : t (s)

Fig.10 Transient thermal resistance Fig.11 Safe operation area Fig.12 Transient thermal resistance

f
(2SB1132) (2SB1237) (2SB1237)

ns d
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es en
m
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D
e
R
ot
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4/4 2009.12 - Rev.C
○
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 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :

or
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

ns d
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

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5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

es en
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.

7) The Products specified in this document are not designed to be radiation tolerant.
m
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
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the recommended usage conditions and specifications contained herein.

D

11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
e

12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
R

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.

13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
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regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.

14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102A